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FDMC8030 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMC8030
- Package: 8-PowerWDFN
- Datasheet:
- Stock: 5705
- Description: FDMC8030 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 hours ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 196mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
| Additional Feature | AVALANCHE RATED |
| Max Power Dissipation | 800mW |
| Number of Elements | 1 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.9W |
| Case Connection | DRAIN SOURCE |
| Turn On Delay Time | 7 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 10m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1975pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Rise Time | 3ns |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 19 ns |
| Continuous Drain Current (ID) | 12A |
| Threshold Voltage | 1.5V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 40V |
| Pulsed Drain Current-Max (IDM) | 50A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Feedback Cap-Max (Crss) | 30 pF |
| Height | 800μm |
| Length | 3mm |
| Width | 3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
FDMC8030 is a dual N-channel Power Trench MOSFET. The onsemi FDMC8030 includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance. The N-channel Power Trench MOSFET FDMC8030 can be applied in Server applications due to the following features. And its ideal operating temperature is between -55 and +150℃.
FDMC8030 Features
Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A
Max rDS(on) = 14 mΩ at VGS = 4.5 V, ID = 10 A
Max rDS(on) = 28 mΩ at VGS = 3.2 V, ID = 4 A
Termination is Lead-free and RoHS Compliant
In Power-33-8 package
FDMC8030 Applications
Server
Battery Protection
Load Switching
Point of Load
portable electronics
