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ContactIRF7341TRPBF
IRF7341TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7341TRPBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 3390
- Description: IRF7341TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 50mOhm |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 55V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 4.7A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | IRF7341PBF |
| Number of Elements | 2 |
| Row Spacing | 6.3 mm |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 8.3 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 50m Ω @ 4.7A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Rise Time | 3.2ns |
| Fall Time (Typ) | 13 ns |
| Turn-Off Delay Time | 32 ns |
| Continuous Drain Current (ID) | 4.7A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 5.1A |
| Drain to Source Breakdown Voltage | 55V |
| Dual Supply Voltage | 55V |
| Avalanche Energy Rating (Eas) | 140 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Recovery Time | 90 ns |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1 V |
| Height | 1.75mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications.
The SO-8 has been upgraded thermally and has multiple-die capability thanks to a redesigned leadframe, making it appropriate for a range of power applications. Multiple devices can be employed in an application with significantly less board space thanks to these enhancements. The container is suitable for vapor phase, infrared, and wave soldering.
In a typical PCB mount application, power dissipation of more than 0.8W is achievable.
IRF7341TRPBF Features
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
IRF7341TRPBF Applications
Power application
