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ContactQS6J1TR
MOSFET 2P-CH 20V 1.5A TSMT6
- Manufacturer: ROHM Semiconductor
- NO: 687-QS6J1TR
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 6522
- Description: MOSFET 2P-CH 20V 1.5A TSMT6(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 340MOhm |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -20V |
| Max Power Dissipation | 1.25W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -1.5A |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | *J1 |
| Pin Count | 6 |
| JESD-30 Code | R-PDSO-G6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.25W |
| Turn On Delay Time | 10 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 215m Ω @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V |
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | 1.5A |
| Threshold Voltage | -2V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | -20V |
| Pulsed Drain Current-Max (IDM) | 6A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 5 |
