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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIHB120N60E-GE3 | Vishay Siliconix | $4.06 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb120n60ege3-datasheets-6562.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | D2PAK (TO-263) | 600V | 179W Tc | N-Channel | 1562pF @ 100V | 120mOhm @ 12A, 10V | 5V @ 250μA | 25A Tc | 45nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB21N65EF-GE3 | Vishay Siliconix | $21.50 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp21n65efge3-datasheets-6506.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 21 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 21A | 650V | 208W Tc | N-Channel | 2322pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 106nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP100N60E-GE3 | Vishay Siliconix | $3.81 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp100n60ege3-datasheets-6568.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 208W Tc | N-Channel | 1851pF @ 100V | 100mOhm @ 13A, 10V | 5V @ 250μA | 30A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP048RPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfp048rpbf-datasheets-6571.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 12 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.4nF | 8.1 ns | 250ns | 250 ns | 210 ns | 70A | 20V | 60V | 4V | 190W Tc | 18mOhm | 60V | N-Channel | 2400pF @ 25V | 4 V | 18mOhm @ 44A, 10V | 4V @ 250μA | 70A Tc | 110nC @ 10V | 18 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIHF12N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihf12n50ce3-datasheets-6578.pdf | TO-220-3 Full Pack | 3 | 8 Weeks | 6.000006g | 3 | yes | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 18 ns | 35ns | 6 ns | 23 ns | 12A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | 36W Tc | TO-220AB | 28A | 0.555Ohm | N-Channel | 1375pF @ 25V | 555m Ω @ 4A, 10V | 5V @ 250μA | 12A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SIHB100N60E-GE3 | Vishay Siliconix | $4.15 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb100n60ege3-datasheets-6634.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | D2PAK (TO-263) | 600V | 208W Tc | N-Channel | 1851pF @ 100V | 100mOhm @ 13A, 10V | 5V @ 250μA | 30A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB18N50KPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfb18n50kpbf-datasheets-6636.pdf | 500V | 18A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 18 Weeks | 6.000006g | Unknown | 290mOhm | 3 | No | 1 | Single | 200W | 1 | TO-220AB | 2.83nF | 22 ns | 60ns | 30 ns | 45 ns | 17A | 30V | 500V | 500V | 5V | 220W Tc | 290mOhm | 500V | N-Channel | 2830pF @ 25V | 5 V | 290mOhm @ 10A, 10V | 5V @ 250μA | 17A Tc | 120nC @ 10V | 290 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IRFP448PBF | Vishay Siliconix | $0.80 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp448pbf-datasheets-6642.pdf | 500V | 11A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 600MOhm | 3 | No | 1 | Single | 180W | 1 | TO-247-3 | 1.9nF | 18 ns | 40ns | 32 ns | 62 ns | 11A | 20V | 500V | 4V | 180W Tc | 600mOhm | 500V | N-Channel | 1900pF @ 25V | 4 V | 600mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 84nC @ 10V | 600 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIHH21N60E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihh21n60et1ge3-datasheets-5421.pdf | 8-PowerTDFN | Lead Free | 4 | 14 Weeks | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 104W Tc | 0.176Ohm | 226 mJ | N-Channel | 2015pF @ 100V | 176m Ω @ 11A, 10V | 4V @ 250μA | 20A Tc | 83nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP24N65E-GE3 | Vishay Siliconix | $2.73 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp24n65ege3-datasheets-6695.pdf | TO-220-3 | 10.51mm | 15.49mm | 4.65mm | Lead Free | 18 Weeks | 6.000006g | Unknown | 145mOhm | 3 | Tin | No | 1 | Single | 250W | 1 | TO-220AB | 2.74nF | 24 ns | 84ns | 69 ns | 70 ns | 24A | 20V | 650V | 2V | 250W Tc | 145mOhm | 650V | N-Channel | 2740pF @ 100V | 145mOhm @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 145 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| SIHG120N60E-GE3 | Vishay Siliconix | $3.67 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg120n60ege3-datasheets-6710.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 179W Tc | N-Channel | 1562pF @ 100V | 120mOhm @ 12A, 10V | 5V @ 250μA | 25A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB180N60E-GE3 | Vishay Siliconix | $1.82 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb180n60ege3-datasheets-6754.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | D2PAK (TO-263) | 600V | 156W Tc | N-Channel | 1085pF @ 100V | 180mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP120N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp120n60ege3-datasheets-6775.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 179W Tc | N-Channel | 1562pF @ 100V | 120mOhm @ 12A, 10V | 5V @ 250μA | 25A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG21N65EF-GE3 | Vishay Siliconix | $4.71 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg21n65efge3-datasheets-6778.pdf | TO-247-3 | 3 | 21 Weeks | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 21A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 208W Tc | TO-247AC | 53A | 0.18Ohm | 367 mJ | N-Channel | 2322pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 106nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SIS888DN-T1-GE3 | Vishay Siliconix | $25.97 |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis888dnt1ge3-datasheets-6842.pdf | PowerPAK® 1212-8S | Lead Free | 14 Weeks | 8 | EAR99 | Tin | not_compliant | e3 | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.7W | 12 ns | 8ns | 8 ns | 13 ns | 5.3A | 20V | 150V | 52W Tc | N-Channel | 420pF @ 75V | 58m Ω @ 10A, 10V | 4.2V @ 250μA | 20.2A Tc | 14.5nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPF50PBF | Vishay Siliconix | $4.48 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpf50pbf-datasheets-6872.pdf | 900V | 6.7A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 1.6Ohm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.9nF | 20 ns | 34ns | 37 ns | 130 ns | 6.7A | 20V | 900V | 4V | 190W Tc | 920 ns | 1.6Ohm | 900V | N-Channel | 2900pF @ 25V | 2 V | 1.6Ohm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 200nC @ 10V | 1.6 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI4136DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4136dyt1ge3-datasheets-6827.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 40 | 3.5W | 1 | 34 ns | 26ns | 23 ns | 50 ns | 46A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1V | 3.5W Ta 7.8W Tc | 0.0026Ohm | 20V | N-Channel | 4560pF @ 10V | 2m Ω @ 15A, 10V | 2.2V @ 250μA | 46A Tc | 110nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI7110DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7110dnt1e3-datasheets-6972.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 4.9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 12 ns | 10ns | 10 ns | 36 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 1.5W Ta | 60A | 20V | N-Channel | 5.3m Ω @ 21.1A, 10V | 2.5V @ 250μA | 13.5A Ta | 21nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SIHH180N60E-T1-GE3 | Vishay Siliconix | $4.30 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh180n60et1ge3-datasheets-5599.pdf | 8-PowerTDFN | 14 Weeks | PowerPAK® 8 x 8 | 600V | 114W Tc | N-Channel | 1085pF @ 100V | 180mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6415DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si6415dqt1e3-datasheets-8202.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 8 | 14 Weeks | 157.991892mg | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | 16 ns | 17ns | 17 ns | 73 ns | 6.5A | 20V | SILICON | 30V | 1.5W Ta | 30A | -30V | P-Channel | 19m Ω @ 6.5A, 10V | 1V @ 250μA (Min) | 70nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIJ494DP-T1-GE3 | Vishay Siliconix | $6.39 |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sij494dpt1ge3-datasheets-7024.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 150V | 69.4W Tc | N-Channel | 1070pF @ 75V | 23.2m Ω @ 15A, 10V | 4.5V @ 250μA | 36.8A Tc | 31nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7456CDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si7456cdpt1ge3-datasheets-7075.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5W | 1 | FET General Purpose Powers | R-XDSO-C5 | 27.5A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 5W Ta 35.7W Tc | 50A | 0.0235Ohm | 100V | N-Channel | 730pF @ 50V | 1.2 V | 23.5m Ω @ 10A, 10V | 2.8V @ 250μA | 27.5A Tc | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI4630DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4630dyt1e3-datasheets-7093.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 8-SO | 25V | 3.5W Ta 7.8W Tc | N-Channel | 6670pF @ 15V | 2.7mOhm @ 20A, 10V | 2.2V @ 250μA | 40A Tc | 161nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR182DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sir182dpt1re3-datasheets-7123.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | EAR99 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 69.4W Tc | 117A | 200A | 0.0028Ohm | 61.25 mJ | N-Channel | 3250pF @ 30V | 2.8m Ω @ 15A, 10V | 3.6V @ 250μA | 60A Tc | 64nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI7112DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7112dnt1ge3-datasheets-6858.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | Unknown | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 65 ns | 11.3A | 12V | SILICON | DRAIN | SWITCHING | 30V | 30V | 600mV | 1.5W Ta | 60A | 0.0075Ohm | 20 mJ | N-Channel | 2610pF @ 15V | 7.5m Ω @ 17.8A, 10V | 1.5V @ 250μA | 11.3A Tc | 27nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||
| SIHG180N60E-GE3 | Vishay Siliconix | $2.43 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg180n60ege3-datasheets-7378.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 156W Tc | N-Channel | 1085pF @ 100V | 180mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9510STRLPBF | Vishay Siliconix | $1.20 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9510strlpbf-datasheets-7460.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 1.2Ohm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 200pF | 10 ns | 27ns | 17 ns | 15 ns | -4A | 20V | 100V | 3.7W Ta 43W Tc | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIR638ADP-T1-RE3 | Vishay Siliconix | $2.18 |
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download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir638adpt1re3-datasheets-7448.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 104W Tc | N-Channel | 9100pF @ 100V | 0.88m Ω @ 20A, 10V | 2.3V @ 250μA | 100A Tc | 165nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR210PBF | Vishay Siliconix | $1.95 |
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download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr210trrpbf-datasheets-3671.pdf | 200V | 2.6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 1.5Ohm | 3 | No | 1 | Single | 25W | 1 | D-Pak | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 2.6A | 20V | 200V | 4V | 2.5W Ta 25W Tc | 310 ns | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 1.5Ohm @ 1.6A, 10V | 4V @ 250μA | 2.6A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI4465ADY-T1-GE3 | Vishay Siliconix |
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download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4465adyt1ge3-datasheets-7618.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 30 | 3W | 1 | Other Transistors | 33 ns | 170ns | 112 ns | 168 ns | 13.7A | 8V | SILICON | -450mV | 3W Ta 6.5W Tc | 20A | 0.009Ohm | -8V | P-Channel | 9m Ω @ 14A, 4.5V | 1V @ 250μA | 85nC @ 4.5V | 1.8V 4.5V | ±8V |
