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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIHB15N60E-GE3 | Vishay Siliconix | $4.32 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb15n60ege3-datasheets-5978.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 280mOhm | 3 | AVALANCHE RATED | No | GULL WING | 4 | 1 | Single | 180W | 1 | FET General Purpose Powers | R-PSSO-G2 | 17 ns | 77ns | 66 ns | 35 ns | 15A | 20V | SILICON | SWITCHING | 2V | 180W Tc | 600V | N-Channel | 1350pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 78nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| SUP70030E-GE3 | Vishay Siliconix | $2.49 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup70030ege3-datasheets-5987.pdf | TO-220-3 | 14 Weeks | NOT SPECIFIED | NOT SPECIFIED | 100V | 375W Tc | N-Channel | 10870pF @ 50V | 3.18m Ω @ 30A, 10V | 4V @ 250μA | 150A Tc | 214nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA180N60E-GE3 | Vishay Siliconix | $2.72 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha180n60ege3-datasheets-5993.pdf | TO-220-3 Full Pack | 14 Weeks | TO-220 Full Pack | 600V | 33W Tc | N-Channel | 1085pF @ 100V | 180mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQP120N06-3M5L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp120n063m5lge3-datasheets-5995.pdf | TO-220-3 | 12 Weeks | TO-220AB | 60V | 250W Tc | N-Channel | 14700pF @ 25V | 3.5mOhm @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 330nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP15N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihp15n65ege3-datasheets-5997.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | 3 | yes | NOT SPECIFIED | Single | NOT SPECIFIED | 34W | 1 | 24ns | 25 ns | 48 ns | 15A | 4V | SILICON | SWITCHING | 34W Tc | TO-220AB | 0.28Ohm | 286 mJ | 650V | N-Channel | 1640pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIHP180N60E-GE3 | Vishay Siliconix | $2.76 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp180n60ege3-datasheets-6043.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 156W Tc | N-Channel | 1085pF @ 100V | 180mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH21N65EF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh21n65eft1ge3-datasheets-6054.pdf | 8-PowerTDFN | 4 | 21 Weeks | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 19.8A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 4V | 156W Tc | 53A | 353 mJ | N-Channel | 2396pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 19.8A Tc | 102nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SIHH14N65E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihh14n65et1ge3-datasheets-5720.pdf | 8-PowerTDFN | 4 | 18 Weeks | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 4V | 156W Tc | 0.26Ohm | 226 mJ | N-Channel | 1712pF @ 100V | 260m Ω @ 7A, 10V | 4V @ 250μA | 15A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SUP50010E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup50010ege3-datasheets-6169.pdf | TO-220-3 | 14 Weeks | NOT SPECIFIED | NOT SPECIFIED | 60V | 375W Tc | N-Channel | 10895pF @ 30V | 2m Ω @ 30A, 10V | 4V @ 250μA | 150A Tc | 212nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF15N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihf15n65ege3-datasheets-6194.pdf | TO-220-3 Full Pack | Lead Free | 18 Weeks | yes | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 34W | 1 | 24ns | 25 ns | 48 ns | 15A | 4V | 650V | 34W Tc | N-Channel | 1640pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIHF22N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihf22n60ee3-datasheets-6204.pdf | TO-220-3 Full Pack | 10.63mm | 16.12mm | 4.83mm | Lead Free | Unknown | 180mOhm | 3 | No | 227W | Single | 227W | 1 | TO-220 Full Pack | 1.92nF | 18 ns | 68ns | 54 ns | 59 ns | 21A | 20V | 600V | 2V | 180mOhm | 600V | N-Channel | 1920pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 180 mΩ | |||||||||||||||||||||||||||||||||||||||
| SIHB25N50E-GE3 | Vishay Siliconix | $3.09 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb25n50ege3-datasheets-6209.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 18 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 250W Tc | 26A | 50A | 0.145Ohm | 273 mJ | N-Channel | 1980pF @ 100V | 145m Ω @ 12A, 10V | 4V @ 250μA | 26A Tc | 86nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SIHH26N60EF-T1-GE3 | Vishay Siliconix | $53.73 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh26n60eft1ge3-datasheets-6167.pdf | 8-PowerTDFN | 4 | 14 Weeks | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 202W Tc | 67A | 0.141Ohm | 353 mJ | N-Channel | 2744pF @ 100V | 141m Ω @ 13A, 10V | 4V @ 250μA | 24A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SIHH24N65E-T1-GE3 | Vishay Siliconix | $4.62 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh24n65et1ge3-datasheets-6253.pdf | 8-PowerTDFN | 18 Weeks | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 23A | 650V | 202W Tc | N-Channel | 2814pF @ 100V | 150m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 116nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH100N60E-T1-GE3 | Vishay Siliconix | $5.16 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh100n60et1ge3-datasheets-6171.pdf | 8-PowerTDFN | 18 Weeks | PowerPAK® 8 x 8 | 600V | 174W Tc | N-Channel | 1850pF @ 100V | 100mOhm @ 13.5A, 10V | 5V @ 250μA | 28A Tc | 53nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG25N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihg25n50ege3-datasheets-6287.pdf | TO-247-3 | 3 | 18 Weeks | 145mOhm | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 19 ns | 36ns | 29 ns | 57 ns | 26A | 20V | SILICON | SWITCHING | 250W Tc | TO-247AC | 50A | 273 mJ | 500V | N-Channel | 1980pF @ 100V | 145m Ω @ 12A, 10V | 4V @ 250μA | 26A Tc | 86nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIHA18N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha18n60ee3-datasheets-6314.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 600V | 600V | 34W Tc | TO-220AB | 18A | 45A | 0.202Ohm | 204 mJ | N-Channel | 1640pF @ 100V | 202m Ω @ 9A, 10V | 4V @ 250μA | 18A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA22N60E-E3 | Vishay Siliconix | $3.36 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha22n60ee3-datasheets-6332.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 6.000006g | Unknown | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 18 ns | 27ns | 35 ns | 66 ns | 21A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | 4V | 35W Tc | TO-220AB | 56A | N-Channel | 1920pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| SIHB23N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihb23n60ege3-datasheets-6346.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 18 Weeks | 1.437803g | Unknown | 3 | No | GULL WING | 1 | Single | 1 | R-PSSO-G2 | 22 ns | 38ns | 34 ns | 66 ns | 23A | 20V | SILICON | SWITCHING | 600V | 600V | 227W Tc | N-Channel | 2418pF @ 100V | 158m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 95nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRFP048PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfp048pbf-datasheets-6359.pdf | 60V | 70A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 18mOhm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.4nF | 8.1 ns | 250ns | 250 ns | 210 ns | 70A | 20V | 60V | 4V | 190W Tc | 18mOhm | 60V | N-Channel | 2400pF @ 25V | 4 V | 18mOhm @ 44A, 10V | 4V @ 250μA | 70A Tc | 110nC @ 10V | 18 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||
| SIHG22N60EF-GE3 | Vishay Siliconix | $4.04 |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg22n60efge3-datasheets-6385.pdf | TO-247-3 | 21 Weeks | TO-247AC | 600V | 179W Tc | N-Channel | 1423pF @ 100V | 182mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG21N60EF-GE3 | Vishay Siliconix | $15.48 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg21n60efge3-datasheets-6421.pdf | TO-247-3 | 3 | 21 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 21A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 227W Tc | TO-247AC | 53A | 0.176Ohm | 367 mJ | N-Channel | 2030pF @ 100V | 176m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 84nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRFP244PBF | Vishay Siliconix | $3.57 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfp244pbf-datasheets-6432.pdf | 250V | 15A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 280mOhm | 3 | 1 | Single | 150W | 1 | TO-247-3 | 1.4nF | 14 ns | 49ns | 24 ns | 42 ns | 15A | 20V | 250V | 4V | 150W Tc | 280mOhm | 250V | N-Channel | 1400pF @ 25V | 4 V | 280mOhm @ 9A, 10V | 4V @ 250μA | 15A Tc | 63nC @ 10V | 280 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||
| SQP120P06-6M7L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | TO-220-3 | 12 Weeks | TO-220AB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG16N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sihg16n50ce3-datasheets-6459.pdf | TO-247-3 | 3 | 11 Weeks | 38.000013g | Unknown | 3 | yes | No | 260 | 3 | 1 | Single | 40 | 250W | 1 | FET General Purpose Power | 27 ns | 156ns | 31 ns | 29 ns | 16A | 30V | SILICON | SWITCHING | 3V | 250W Tc | TO-247AC | 40A | 500V | N-Channel | 1900pF @ 25V | 380m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 68nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| SIHP22N65E-GE3 | Vishay Siliconix | $23.17 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp22n65ege3-datasheets-6467.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | Unknown | 3 | NOT SPECIFIED | Single | NOT SPECIFIED | 227W | 1 | 33ns | 38 ns | 73 ns | 22A | 4V | SILICON | SWITCHING | 650V | 650V | 227W Tc | TO-220AB | 56A | N-Channel | 2415pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SIHP21N80AE-GE3 | Vishay Siliconix | $4.13 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp21n80aege3-datasheets-6479.pdf | TO-220-3 | 14 Weeks | TO-220AB | 800V | 32W Tc | N-Channel | 1388pF @ 100V | 235mOhm @ 11A, 10V | 4V @ 250μA | 17.4A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP21N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp21n65efge3-datasheets-6506.pdf | TO-220-3 | 3 | 22 Weeks | 6.000006g | Unknown | 3 | yes | No | 1 | Single | 1 | 22 ns | 34ns | 68 ns | 68 ns | 21A | 20V | SILICON | SWITCHING | 650V | 208W Tc | TO-220AB | 55A | 700V | N-Channel | 2322pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 106nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SUM50010E-GE3 | Vishay Siliconix | $2.81 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum50010ege3-datasheets-6517.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 60V | 375W Tc | N-Channel | 10895pF @ 30V | 1.75mOhm @ 30A, 10V | 4V @ 250μA | 150A Tc | 212nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPF30PBF | Vishay Siliconix | $19.13 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpf30pbf-datasheets-6551.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | 3.7Ohm | 3 | No | 1 | Single | 125W | 1 | TO-247-3 | 1.2nF | 14 ns | 25ns | 30 ns | 90 ns | 3.6A | 20V | 900V | 125W Tc | 3.7Ohm | N-Channel | 1200pF @ 25V | 3.7Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 78nC @ 10V | 3.7 Ω | 10V | ±20V |
