| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Lead Length | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIR104DP-T1-RE3 | Vishay Siliconix | $1.77 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir104dpt1re3-datasheets-4763.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 100V | 5.4W Ta 100W Tc | N-Channel | 4230pF @ 50V | 6.4mOhm @ 15A, 10V | 3.5V @ 250μA | 18.3A Ta 79A Tc | 84nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR140DP-T1-GE3 | Vishay Siliconix | $2.10 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr140dpt1ge3-datasheets-4746.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 25V | 6.25W Ta 125W Tc | N-Channel | 8150pF @ 10V | 0.67mOhm @ 20A, 10V | 2.1V @ 250μA | 79A Ta 100A Tc | 170nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9520STRLPBF | Vishay Siliconix | $2.87 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9520spbf-datasheets-1890.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 600mOhm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 390pF | 9.6 ns | 29ns | 25 ns | 21 ns | -6.8A | 20V | 100V | 100V | 3.7W Ta 60W Tc | 600mOhm | P-Channel | 390pF @ 25V | 4 V | 600mOhm @ 4.1A, 10V | 4V @ 250μA | 6.8A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIHD2N80AE-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd2n80aege3-datasheets-4876.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | D-PAK (TO-252) | 800V | 62.5W Tc | N-Channel | 180pF @ 100V | 2.9Ohm @ 500mA, 10V | 4V @ 250μA | 2.9A Tc | 10.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50P08-28_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0828ge3-datasheets-4795.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | 136W | 1 | TO-252AA | 48A | 20V | 80V | 136W Tc | P-Channel | 6035pF @ 25V | 28mOhm @ 12.5A, 10V | 3.5V @ 250μA | 48A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD5N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sihd5n50dge3-datasheets-4739.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 13 Weeks | 3 | No | SINGLE | GULL WING | 1 | FET General Purpose Powers | R-PSSO-G2 | 12 ns | 11ns | 11 ns | 14 ns | 5.3A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 104W Tc | TO-252AA | 10A | N-Channel | 325pF @ 100V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SIHJ7N65E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihj7n65et1ge3-datasheets-4814.pdf | PowerPAK® SO-8 | 18 Weeks | No SVHC | 4 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 7.9A | 650V | 2V | 96W Tc | N-Channel | 820pF @ 100V | 598m Ω @ 3.5A, 10V | 4V @ 250μA | 7.9A Tc | 44nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU210PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr210trrpbf-datasheets-3671.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 1.5Ohm | 3 | yes | EAR99 | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | 8.2 ns | 17ns | 8.9 ns | 14 ns | 2.6A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 25W Tc | 95 mJ | 200V | N-Channel | 140pF @ 25V | 1.5 Ω @ 1.6A, 10V | 4V @ 250μA | 2.6A Tc | 8.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRFU214PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irfu214pbf-datasheets-4957.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 2Ohm | 3 | yes | EAR99 | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | 7 ns | 7.6ns | 7 ns | 16 ns | 2.2A | 20V | SILICON | DRAIN | SWITCHING | 250V | 250V | 4V | 2.5W Ta 25W Tc | 8.8A | N-Channel | 140pF @ 25V | 2 Ω @ 1.3A, 10V | 4V @ 250μA | 2.2A Tc | 8.2nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SIDR626DP-T1-GE3 | Vishay Siliconix | $2.39 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr626dpt1ge3-datasheets-4939.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 60V | 6.25W Ta 125W Tc | N-Channel | 5130pF @ 30V | 1.7mOhm @ 20A, 10V | 3.4V @ 250μA | 42.8A Ta 100A Tc | 102nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR010PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr010pbf-datasheets-4965.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 8 Weeks | 1.437803g | 3 | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | 250 | 3 | 1 | Single | 40 | 25W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 50ns | 19 ns | 13 ns | 8.2A | 20V | SILICON | DRAIN | SWITCHING | 50V | 25W Tc | 0.2Ohm | 60V | N-Channel | 250pF @ 25V | 200m Ω @ 4.6A, 10V | 4V @ 250μA | 8.2A Tc | 10nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFD224PBF | Vishay Siliconix | $5.27 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd224pbf-datasheets-4973.pdf | 4-DIP (0.300, 7.62mm) | 8 Weeks | 4 | No | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 260pF | 7 ns | 13ns | 13 ns | 20 ns | 630mA | 20V | 250V | 1W Ta | 1.1Ohm | 250V | N-Channel | 260pF @ 25V | 1.1Ohm @ 380mA, 10V | 4V @ 250μA | 630mA Ta | 14nC @ 10V | 1.1 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIDR622DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr622dpt1ge3-datasheets-4988.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 150V | 6.25W Ta 125W Tc | N-Channel | 1516pF @ 75V | 17.7mOhm @ 20A, 10V | 4.5V @ 250μA | 64.6A Ta 56.7A Tc | 41nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD123PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfd123pbf-datasheets-4991.pdf | 4-DIP (0.300, 7.62mm) | Lead Free | 4 | 8 Weeks | Unknown | 270mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | DUAL | 4 | 1W | 1 | FET General Purpose Power | 8.2 ns | 17ns | 17 ns | 14 ns | 600mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 2V | 1.3W Ta | 200V | N-Channel | 360pF @ 25V | 270m Ω @ 780mA, 10V | 4V @ 250μA | 1.3A Ta | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIDR680DP-T1-GE3 | Vishay Siliconix | $2.25 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr680dpt1ge3-datasheets-4978.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 80V | 6.25W Ta 125W Tc | N-Channel | 5150pF @ 40V | 2.9mOhm @ 20A, 10V | 3.4V @ 250μA | 32.8A Ta 100A Tc | 105nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU224PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfu224pbf-datasheets-5033.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | 1.1Ohm | 3 | EAR99 | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 1 | 7 ns | 13ns | 12 ns | 20 ns | 3.8A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | 250V | N-Channel | 260pF @ 25V | 1.1 Ω @ 2.3A, 10V | 4V @ 250μA | 3.8A Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFU9214PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr9214trpbf-datasheets-8548.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 3Ohm | 3 | EAR99 | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 50W | 1 | 11 ns | 14ns | 17 ns | 20 ns | 2.7A | 20V | SILICON | DRAIN | SWITCHING | 250V | -4V | 50W Tc | -250V | P-Channel | 220pF @ 25V | -4 V | 3 Ω @ 1.7A, 10V | 4V @ 250μA | 2.7A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRFU220PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfu220pbf-datasheets-5110.pdf | 200V | 4.8A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 800mOhm | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Powers | Not Qualified | 7.2 ns | 22ns | 13 ns | 19 ns | 4.8A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 42W Tc | 200V | N-Channel | 260pF @ 25V | 800m Ω @ 2.9A, 10V | 4V @ 250μA | 4.8A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IRLU024PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-irlu024pbf-datasheets-5123.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Not Qualified | 11 ns | 110ns | 41 ns | 23 ns | 14A | 10V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | 56A | 60V | N-Channel | 870pF @ 25V | 100m Ω @ 8.4A, 5V | 2V @ 250μA | 14A Tc | 18nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||
| SIHD6N65E-GE3 | Vishay Siliconix | $1.10 |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd6n65ege3-datasheets-5134.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 14 Weeks | Unknown | 3 | yes | No | GULL WING | Single | 78W | 1 | R-PSSO-G2 | 14 ns | 12ns | 20 ns | 30 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 2V | 78W Tc | TO-252AA | 7A | 0.6Ohm | 56 mJ | 650V | N-Channel | 820pF @ 100V | 600m Ω @ 3A, 10V | 4V @ 250μA | 7A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRFU9210PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfu9210pbf-datasheets-5149.pdf | -1.9A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | 8 ns | 12ns | 13 ns | 11 ns | 1.9A | 20V | SILICON | DRAIN | SWITCHING | 200V | 2.5W Ta 25W Tc | 7.6A | 3Ohm | -200V | P-Channel | 170pF @ 25V | 3 Ω @ 1.1A, 10V | 4V @ 250μA | 1.9A Tc | 8.9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| SIDR610DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr610dpt1ge3-datasheets-5162.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 200V | 6.25W Ta 125W Tc | N-Channel | 1380pF @ 100V | 31.9mOhm @ 10A, 10V | 4V @ 250μA | 8.9A Ta 39.6A Tc | 38nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS11N50ATRLP | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfs11n50atrlp-datasheets-5178.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 520mOhm | 3 | 1 | Single | TO-263AB | 1.423nF | 14 ns | 35ns | 28 ns | 32 ns | 11A | 30V | 500V | 170W Tc | 520mOhm | 500V | N-Channel | 1423pF @ 25V | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 520 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SIE810DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sie810dft1ge3-datasheets-5145.pdf | 10-PolarPAK® (L) | 6.15mm | 800μm | 5.16mm | Lead Free | 4 | 14 Weeks | No SVHC | 20MOhm | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | 1 | Single | 30 | 125mW | 1 | FET General Purpose Power | R-XDSO-N4 | 20 ns | 70ns | 10 ns | 100 ns | 60A | 12V | SILICON | DRAIN | SWITCHING | 1.3V | 5.2W Ta 125W Tc | 45A | 36 mJ | 20V | N-Channel | 13000pF @ 10V | 1.4m Ω @ 25A, 10V | 2V @ 250μA | 60A Tc | 300nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||
| SIHU6N62E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihu6n62ege3-datasheets-5213.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 18 Weeks | 329.988449mg | Unknown | 3 | yes | No | 1 | Single | 1 | 12 ns | 10ns | 16 ns | 22 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 620V | 78W Tc | 6A | 0.9Ohm | 88 mJ | N-Channel | 578pF @ 100V | 900m Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRFBC30ASTRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfbc30astrlpbf-datasheets-5227.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 74W | 1 | D2PAK | 510pF | 9.8 ns | 13ns | 12 ns | 19 ns | 3.6A | 30V | 600V | 74W Tc | 2.2Ohm | 600V | N-Channel | 510pF @ 25V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250μA | 3.6A Tc | 23nC @ 10V | 2.2 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SIE810DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie810dft1ge3-datasheets-5145.pdf | 10-PolarPAK® (L) | 4 | 14 Weeks | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | 1 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-N4 | 45A | 12V | SILICON | DRAIN | SWITCHING | 20V | 20V | 5.2W Ta 125W Tc | 0.0027Ohm | 36 mJ | N-Channel | 13000pF @ 10V | 1.4m Ω @ 25A, 10V | 2V @ 250μA | 60A Tc | 300nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||
| SQM85N15-19_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sqm85n1519ge3-datasheets-5252.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 12 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 375W | 1 | TO-263 (D2Pak) | 6.285nF | 22 ns | 170ns | 170 ns | 40 ns | 85A | 20V | 150V | 3V | 375W Tc | 19mOhm | 150V | N-Channel | 6285pF @ 25V | 3 V | 19mOhm @ 30A, 10V | 3.5V @ 250μA | 85A Tc | 120nC @ 10V | 19 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFD420PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd420pbf-datasheets-5258.pdf | 500V | 460mA | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | No SVHC | 4 | No | Single | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 360pF | 8 ns | 8.6ns | 8.6 ns | 33 ns | 370mA | 20V | 500V | 4V | 1W Ta | 3Ohm | 500V | N-Channel | 360pF @ 25V | 3Ohm @ 220mA, 10V | 4V @ 250μA | 370mA Ta | 24nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFU9120PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfr9120trpbf-datasheets-5334.pdf | -100V | -5.6A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 600mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 9.65mm | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | 9.6 ns | 47ns | 31 ns | 21 ns | -5.6A | 20V | SILICON | DRAIN | SWITCHING | 100V | -4V | 2.5W Ta 42W Tc | 22A | -100V | P-Channel | 390pF @ 25V | 600m Ω @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 18nC @ 10V | 10V | ±20V |
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