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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIR680DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sir680dpt1re3-datasheets-0103.pdf | PowerPAK® SO-8 | 1.17mm | 5 | 14 Weeks | EAR99 | S17-0173-Single | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | 1 | NOT SPECIFIED | 6.25W | 1 | 150°C | R-PDSO-N5 | 16 ns | 30 ns | 32.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 104W Tc | 200A | 0.0029Ohm | 80 mJ | 80V | N-Channel | 5150pF @ 40V | 2.9m Ω @ 20A, 10V | 3.4V @ 250μA | 100A Tc | 81nC @ 7.5V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF9640STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9640strlpbf-datasheets-0346.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.946308g | Unknown | 500mOhm | 3 | No | 1 | Single | 3W | 1 | D2PAK | 1.2nF | 14 ns | 43ns | 38 ns | 39 ns | 11A | 20V | 200V | 200V | 4V | 3W Ta 125W Tc | 500mOhm | -200V | P-Channel | 1200pF @ 25V | 4 V | 500mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 44nC @ 10V | 500 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SQD50P08-25L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0825lge3-datasheets-0444.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 136W | 1 | TO-252AA | 10 ns | 11ns | 16 ns | 71 ns | 50A | 20V | 80V | 136W Tc | 25mOhm | P-Channel | 5350pF @ 25V | 25mOhm @ 10.5A, 10V | 2.5V @ 250μA | 50A Tc | 137nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4456DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4456dyt1e3-datasheets-0440.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 14 Weeks | 186.993455mg | Unknown | 3.8mOhm | 8 | No | 1 | Single | 3.5W | 1 | 8-SO | 5.67nF | 21 ns | 58ns | 8 ns | 55 ns | 33A | 20V | 40V | 2.8V | 3.5W Ta 7.8W Tc | 3.8mOhm | 40V | N-Channel | 5670pF @ 20V | 3.8mOhm @ 20A, 10V | 2.8V @ 250μA | 33A Tc | 122nC @ 10V | 3.8 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIR870DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir870dpt1ge3-datasheets-0386.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 6mOhm | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 6.25W | 1 | FET General Purpose Power | R-PDSO-C5 | 8 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 100V | 1.2V | 6.25W Ta 104W Tc | N-Channel | 2840pF @ 50V | 6m Ω @ 20A, 10V | 3V @ 250μA | 60A Tc | 84nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SQD90P04-9M4L_GE3 | Vishay Siliconix | $2.26 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd90p049m4lge3-datasheets-0446.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 40V | 136W Tc | P-Channel | 6675pF @ 20V | 9.4mOhm @ 17A, 10V | 2.5V @ 250μA | 90A Tc | 155nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLD120PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irld120pbf-datasheets-0552.pdf | 100V | 1.3A | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | Unknown | 270mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 490pF | 9.8 ns | 64ns | 64 ns | 21 ns | 1.3A | 10V | 100V | 2V | 1.3W Ta | 270mOhm | 100V | N-Channel | 490pF @ 25V | 270mOhm @ 780mA, 5V | 2V @ 250μA | 1.3A Ta | 12nC @ 5V | 270 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||
| IRFD9120PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfd9120pbf-datasheets-0574.pdf | -100V | -1A | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 4 | 8 Weeks | Unknown | 600mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | DUAL | 4 | Single | 1.3W | 1 | 9.6 ns | 29ns | 29 ns | 21 ns | -1A | 20V | SILICON | DRAIN | SWITCHING | -4V | 1.3W Ta | 200 ns | 1A | 8A | 100V | P-Channel | 390pF @ 25V | -4 V | 600m Ω @ 600mA, 10V | 4V @ 250μA | 1A Ta | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SQJQ466E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqjq466et1ge3-datasheets-0617.pdf | 8-PowerTDFN | 2.03mm | 14 Weeks | C14-0891-SINGLE | 1 | 150W | 175°C | PowerPAK® 8 x 8 | 24 ns | 47 ns | 200A | 20V | 60V | 150W Tc | 1.7mOhm | 60V | N-Channel | 10210pF @ 25V | 1.9mOhm @ 10A, 10V | 3.5V @ 250μA | 200A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4401EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq4401eyt1ge3-datasheets-0637.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 12 Weeks | 506.605978mg | Unknown | 8 | Tin | No | 1 | Single | 1.8W | 1 | 8-SO | 4.25nF | 58 ns | 76ns | 44 ns | 67 ns | 17.3A | 20V | 40V | -2V | 7.14W Tc | 11mOhm | -40V | P-Channel | 4250pF @ 20V | -2 V | 14mOhm @ 10.5A, 10V | 2.5V @ 250μA | 17.3A Tc | 115nC @ 10V | 14 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF630PBF | Vishay Siliconix | $0.23 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf630pbf-datasheets-0717.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 400mOhm | 3 | No | 1 | Single | 74W | 1 | TO-220AB | 800pF | 9.4 ns | 28ns | 20 ns | 39 ns | 9A | 20V | 200V | 4V | 74W Tc | 400mOhm | 200V | N-Channel | 800pF @ 25V | 400mOhm @ 5.4A, 10V | 4V @ 250μA | 9A Tc | 43nC @ 10V | 400 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFR120PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfu120pbf-datasheets-9324.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 270mOhm | 3 | No | 77A | 100V | 1 | Single | 2.5W | 1 | D-Pak | 360pF | 6.8 ns | 27ns | 17 ns | 18 ns | 7.7A | 20V | 100V | 100V | 4V | 2.5W Ta 42W Tc | 270mOhm | N-Channel | 360pF @ 25V | 4 V | 270mOhm @ 4.6A, 10V | 4V @ 250μA | 7.7A Tc | 16nC @ 10V | 270 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI3493DDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si3493ddvt1ge3-datasheets-1115.pdf | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | 6 | 14 Weeks | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 2W | 1 | 150°C | R-PDSO-G6 | 25 ns | 95 ns | -7.5A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 3.6W Tc | 8A | 0.024Ohm | -20V | P-Channel | 1825pF @ 10V | 24m Ω @ 7.5A, 4.5V | 1V @ 250μA | 8A Tc | 30nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI3453DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3453dvt1ge3-datasheets-1121.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | 1 | NOT SPECIFIED | 1 | Other Transistors | R-PDSO-G6 | 4 ns | 9ns | 7 ns | 11 ns | -3.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 3W Tc | P-Channel | 155pF @ 15V | 165m Ω @ 2.5A, 10V | 2.5V @ 250μA | 3.4A Tc | 6.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI1330EDL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si1330edlt1e3-datasheets-1598.pdf | SC-70, SOT-323 | 2mm | 1mm | 1.25mm | Lead Free | 3 | 14 Weeks | 124.596154mg | Unknown | 2.5Ohm | 3 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 280mW | 1 | FET General Purpose Powers | 3.8 ns | 4.8ns | 4.8 ns | 12.8 ns | 250mA | 20V | SILICON | SWITCHING | 2V | 280mW Ta | 0.24A | 60V | N-Channel | 2.5 Ω @ 250mA, 10V | 2.5V @ 250μA | 240mA Ta | 0.6nC @ 4.5V | 3V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI7123DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7123dnt1ge3-datasheets-1880.pdf | PowerPAK® 1212-8 | 3.3mm | 1.04mm | 3.3mm | Lead Free | 5 | 12 Weeks | Unknown | 10.6mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | 40 | 1.5W | 1 | Other Transistors | S-XDSO-C5 | 25 ns | 88ns | 88 ns | 82 ns | -25A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | -1V | 1.5W Ta | 40A | -20V | P-Channel | 3729pF @ 10V | 10.6m Ω @ 15A, 4.5V | 1V @ 250μA | 10.2A Ta | 90nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SI8802DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si8802dbt2e1-datasheets-1785.pdf | 4-XFBGA | Lead Free | 4 | 30 Weeks | Unknown | 54mOhm | 4 | EAR99 | Tin | No | e3 | BOTTOM | BALL | 4 | 1 | Single | 500mW | 1 | FET General Purpose Power | 5 ns | 15ns | 7 ns | 22 ns | 3.5A | 5V | SILICON | SWITCHING | 500mW Ta | 8V | N-Channel | 350 mV | 54m Ω @ 1A, 4.5V | 700mV @ 250μA | 6.5nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||
| SIA462DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia462djt1ge3-datasheets-2125.pdf | PowerPAK® SC-70-6 | 14 Weeks | 6 | No | Single | 3.5W | 1 | PowerPAK® SC-70-6 Single | 570pF | 10ns | 10 ns | 15 ns | 12A | 20V | 30V | 3.5W Ta 19W Tc | 18mOhm | 30V | N-Channel | 570pF @ 15V | 18mOhm @ 9A, 10V | 2.4V @ 250μA | 12A Tc | 17nC @ 10V | 18 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2301ES-T1_GE3 | Vishay Siliconix | $0.44 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2301est1ge3-datasheets-2208.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | TO-236 (SOT-23) | 20V | 3W Tc | P-Channel | 425pF @ 10V | 120mOhm @ 2.8A, 4.5V | 1.5V @ 250μA | 3.9A Tc | 8nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2307CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2307cdst1ge3-datasheets-1782.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 88MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.1W | 1 | Other Transistors | 150°C | 5.5 ns | 40ns | 40 ns | 17 ns | -2.7A | 20V | SILICON | SWITCHING | 30V | -3V | 1.1W Ta 1.8W Tc | -30V | P-Channel | 340pF @ 15V | -3 V | 88m Ω @ 3.5A, 10V | 3V @ 250μA | 3.5A Tc | 6.2nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI1427EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si1427edht1ge3-datasheets-2494.pdf | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 14 Weeks | No SVHC | 6 | EAR99 | No | DUAL | GULL WING | 6 | 1 | 1.56W | 1 | Other Transistors | 90 ns | 400ns | 2.3 μs | 5.2 μs | 2A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | -400mV | 1.56W Ta 2.8W Tc | 2A | -20V | P-Channel | 64m Ω @ 3A, 4.5V | 1V @ 250μA | 2A Tc | 21nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| SI5415AEDU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si5415aedut1ge3-datasheets-2559.pdf | PowerPAK® ChipFET™ Single | Lead Free | 8 | EAR99 | No | Pure Matte Tin (Sn) | 260 | 1 | Single | 30 | 3.1W | 12 ns | 45ns | 25 ns | 80 ns | 25A | 8V | 20V | 3.1W Ta 31W Tc | -20V | P-Channel | 4300pF @ 10V | 9.6m Ω @ 10A, 4.5V | 1V @ 250μA | 25A Tc | 120nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA66DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sira66dpt1ge3-datasheets-3047.pdf | PowerPAK® SO-8 | 14 Weeks | 1.9mOhm | 8 | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 30V | 62.5W Tc | N-Channel | 2.3m Ω @ 15A, 10V | 2.2V @ 1mA | 50A Tc | 66nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS106DN-T1-GE3 | Vishay Siliconix | $0.85 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis106dnt1ge3-datasheets-3107.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 60V | 3.2W Ta 24W Tc | N-Channel | 540pF @ 30V | 18.5mOhm @ 4A, 10V | 4V @ 250μA | 9.8A Ta 16A Tc | 13.5nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR167DP-T1-GE3 | Vishay Siliconix | $0.90 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir167dpt1ge3-datasheets-3095.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 65.8W Tc | P-Channel | 4380pF @ 15V | 5.5mOhm @ 15A, 10V | 2.5V @ 250μA | 60A Tc | 111nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS61DN-T1-GE3 | Vishay Siliconix | $0.81 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss61dnt1ge3-datasheets-3034.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S | 20V | 5W Ta 65.8W Tc | P-Channel | 8740pF @ 10V | 3.5mOhm @ 15A, 4.5V | 900mV @ 250μA | 30.9A Ta 111.9A Tc | 231nC @ 10V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3469DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3469dvt1e3-datasheets-3277.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | 19.986414mg | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.14W | 1 | Other Transistors | 10 ns | 12ns | 35 ns | 50 ns | -6.7A | 20V | SILICON | SWITCHING | -1V | 1.14W Ta | 5A | 0.03Ohm | -20V | P-Channel | -1 V | 30m Ω @ 6.7A, 10V | 3V @ 250μA | 5A Ta | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SISS67DN-T1-GE3 | Vishay Siliconix | $0.90 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss67dnt1ge3-datasheets-3158.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 30V | 65.8W Tc | P-Channel | 4380pF @ 15V | 5.5mOhm @ 15A, 10V | 2.5V @ 250μA | 60A Tc | 111nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR122DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir122dpt1re3-datasheets-3093.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 80V | 5.2W Ta 65.7W Tc | N-Channel | 1950pF @ 40V | 7.4mOhm @ 10A, 10V | 3.8V @ 250μA | 16.7A Ta 59.6A Tc | 44nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR124DP-T1-RE3 | Vishay Siliconix | $0.86 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir124dpt1re3-datasheets-3182.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 80V | 5W Ta 62.5W Tc | N-Channel | 1666pF @ 40V | 8.4mOhm @ 10A, 10V | 3.8V @ 250μA | 16.1A Ta 56.8A Tc | 40nC @ 10V | 7.5V 10V | ±20V |
