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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SUM60020E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum60020ege3-datasheets-5301.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 80V | 375W Tc | N-Channel | 10680pF @ 40V | 2.1mOhm @ 30A, 10V | 4V @ 250μA | 150A Tc | 227nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU430APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfu430apbf-datasheets-5314.pdf | 500V | 5A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 11 Weeks | 329.988449mg | Unknown | 1.7Ohm | 3 | No | e3 | MATTE TIN | 260 | 3 | 1 | Single | 40 | 110W | 1 | 8.7 ns | 27ns | 16 ns | 17 ns | 5A | 30V | SILICON | DRAIN | SWITCHING | 4.5V | 110W Tc | 5A | 20A | 500V | N-Channel | 490pF @ 25V | 1.7 Ω @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IRFR9024PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr9024pbf-datasheets-5404.pdf | -60V | -8.8A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 280mOhm | 3 | No | 1 | Single | 42W | 1 | D-Pak | 570pF | 13 ns | 68ns | 29 ns | 15 ns | -8.8A | 20V | 60V | -4V | 2.5W Ta 42W Tc | 200 ns | 280mOhm | -60V | P-Channel | 570pF @ 25V | 280mOhm @ 5.3A, 10V | 4V @ 250μA | 8.8A Tc | 19nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRLZ34SPBF | Vishay Siliconix | $1.88 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz34spbf-datasheets-5430.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 8 Weeks | 50MOhm | 3 | No | 1 | TO-263 (D2Pak) | 1.6nF | 14 ns | 170ns | 56 ns | 30 ns | 30A | 10V | 60V | 3.7W Ta 88W Tc | 50mOhm | N-Channel | 1600pF @ 25V | 50mOhm @ 18A, 5V | 2V @ 250μA | 30A Tc | 35nC @ 5V | 50 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFUC20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-irfrc20trpbf-datasheets-2433.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | No SVHC | 4.4Ohm | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | FET General Purpose Power | 10 ns | 23ns | 25 ns | 30 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 42W Tc | 2A | 8A | 74 mJ | 600V | N-Channel | 350pF @ 25V | 4.4 Ω @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| SI7868ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7868adpt1e3-datasheets-5408.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 2.25mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.4W | 1 | FET General Purpose Power | R-XDSO-C5 | 28 ns | 120ns | 12 ns | 58 ns | 40A | 16V | SILICON | DRAIN | SWITCHING | 5.4W Ta 83W Tc | 35A | 70A | 45 mJ | 20V | N-Channel | 6110pF @ 10V | 600 mV | 2.25m Ω @ 20A, 10V | 1.6V @ 250μA | 40A Tc | 150nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||
| IRFD113PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irfd113pbf-datasheets-5477.pdf | 4-DIP (0.300, 7.62mm) | 2 | 8 Weeks | 4 | EAR99 | No | DUAL | 2 | 1 | 1 | FET General Purpose Power | R-PDIP-T2 | 10 ns | 15ns | 10 ns | 15 ns | 800mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1W Tc | 0.8A | 0.8Ohm | 25 pF | N-Channel | 200pF @ 25V | 800m Ω @ 800mA, 10V | 4V @ 250μA | 800mA Tc | 7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIHH11N65EF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihh11n65eft1ge3-datasheets-5480.pdf | 8-PowerTDFN | 21 Weeks | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 11A | 650V | 130W Tc | N-Channel | 1243pF @ 100V | 382m Ω @ 6A, 10V | 4V @ 250μA | 11A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFDC20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfdc20pbf-datasheets-5489.pdf | 600V | 320mA | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | Unknown | 4.4Ohm | 4 | No | Single | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 350pF | 10 ns | 23ns | 23 ns | 30 ns | 320mA | 20V | 600V | 4V | 1W Ta | 4.4Ohm | 600V | N-Channel | 350pF @ 25V | 10 V | 4.4Ohm @ 190mA, 10V | 4V @ 250μA | 320mA Ta | 18nC @ 10V | 4.4 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SUM70030E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum70030ege3-datasheets-5466.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | NOT SPECIFIED | NOT SPECIFIED | 100V | 375W Tc | N-Channel | 10870pF @ 50V | 2.88m Ω @ 30A, 10V | 4V @ 250μA | 150A Tc | 214nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS9N60ATRRPBF | Vishay Siliconix | $2.98 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfs9n60apbf-datasheets-3643.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 11 Weeks | 1.437803g | 3 | No | 1 | Single | 170W | 1 | D2PAK | 1.4nF | 13 ns | 25ns | 22 ns | 30 ns | 9.2A | 30V | 600V | 170W Tc | 750mOhm | N-Channel | 1400pF @ 25V | 750mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 49nC @ 10V | 750 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SIHH11N60EF-T1-GE3 | Vishay Siliconix | $8.79 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh11n60eft1ge3-datasheets-5388.pdf | 8-PowerTDFN | 21 Weeks | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 11A | 600V | 4V | 114W Tc | N-Channel | 1078pF @ 100V | 357m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 62nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD240N60E-GE3 | Vishay Siliconix | $2.05 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd240n60ege3-datasheets-5613.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | D-PAK (TO-252AA) | 600V | 78W Tc | N-Channel | 783pF @ 100V | 240mOhm @ 5.5A, 10V | 5V @ 250μA | 12A Tc | 23nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC40ASTRLPBF | Vishay Siliconix | $3.63 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc40astrlpbf-datasheets-5609.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 1.2Ohm | 3 | No | 1 | Single | 125W | 1 | D2PAK | 1.036nF | 13 ns | 23ns | 18 ns | 31 ns | 6.2A | 30V | 600V | 125W Tc | 1.2Ohm | 600V | N-Channel | 1036pF @ 25V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 42nC @ 10V | 1.2 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIHH26N60E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihh26n60et1ge3-datasheets-5628.pdf | 8-PowerTDFN | Lead Free | 4 | 14 Weeks | Unknown | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 25A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 4V | 202W Tc | 50A | 0.135Ohm | 353 mJ | N-Channel | 2815pF @ 100V | 135m Ω @ 13A, 10V | 4V @ 250μA | 25A Tc | 116nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SQV120N10-3M8_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqv120n103m8ge3-datasheets-5652.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | EAR99 | unknown | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 250W Tc | 120A | 480A | 0.0038Ohm | 266 mJ | N-Channel | 7230pF @ 25V | 3.8m Ω @ 20A, 10V | 3.5V @ 250μA | 120A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIBC20GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfibc20gpbf-datasheets-5671.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | yes | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 30W | 1 | FET General Purpose Power | 10 ns | 23ns | 25 ns | 30 ns | 1.7A | 20V | SILICON | SWITCHING | 600V | 600V | 2V | 30W Tc | TO-220AB | 6.8A | 84 mJ | N-Channel | 350pF @ 25V | 4.4 Ω @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 18nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SIHD180N60E-GE3 | Vishay Siliconix | $2.33 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihd180n60ege3-datasheets-5686.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | TO-252AA | 600V | 156W Tc | N-Channel | 1080pF @ 100V | 195mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfz48spbf-datasheets-5795.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | 3 | No | D2PAK | 2.4nF | 8.1 ns | 250ns | 250 ns | 210 ns | 50A | 20V | 60V | 3.7W Ta 190W Tc | N-Channel | 2400pF @ 25V | 18mOhm @ 43A, 10V | 4V @ 250μA | 50A Tc | 110nC @ 10V | 18 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP70090E-GE3 | Vishay Siliconix | $2.53 |
Min: 1 Mult: 1 |
download | ThunderFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup70090ege3-datasheets-5818.pdf | TO-220-3 | 3 | 14 Weeks | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 125W Tc | TO-220AB | 120A | 0.0089Ohm | 80 mJ | N-Channel | 1950pF @ 50V | 8.9m Ω @ 20A, 10V | 4V @ 250μA | 50A Tc | 50nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHP25N40D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp25n40dge3-datasheets-3763.pdf | TO-220-3 | 3 | 13 Weeks | 3 | AVALANCHE RATED | No | SINGLE | 3 | 1 | FET General Purpose Power | 21 ns | 57ns | 37 ns | 40 ns | 25A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 400V | 400V | 278W Tc | TO-220AB | 78A | 0.17Ohm | 556 mJ | N-Channel | 1707pF @ 100V | 170m Ω @ 13A, 10V | 5V @ 250μA | 25A Tc | 88nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SUP60030E-GE3 | Vishay Siliconix | $2.54 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup60030ege3-datasheets-5853.pdf | TO-220-3 | 3 | 14 Weeks | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 375W Tc | TO-220AB | 250A | 0.0034Ohm | 245 mJ | N-Channel | 7910pF @ 40V | 3.4m Ω @ 30A, 10V | 4V @ 250μA | 120A Tc | 141nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF840LCLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf840lclpbf-datasheets-5874.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | 8 Weeks | 2.387001g | No | 1 | Single | 3.1W | 1 | I2PAK | 1.1nF | 12 ns | 25ns | 19 ns | 27 ns | 8A | 30V | 500V | 3.1W Ta 125W Tc | 850mOhm | N-Channel | 1100pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 39nC @ 10V | 850 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SIHA25N50E-E3 | Vishay Siliconix | $11.78 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha25n50ee3-datasheets-5891.pdf | TO-220-3 Full Pack | 18 Weeks | 6.000006g | 145mOhm | 1 | Single | TO-220 Full Pack | 1.98nF | 19 ns | 36ns | 29 ns | 57 ns | 26A | 20V | 500V | 35W Tc | 145mOhm | 500V | N-Channel | 1980pF @ 100V | 145mOhm @ 12A, 10V | 4V @ 250μA | 26A Tc | 86nC @ 10V | 145 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIHP23N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihp23n60ege3-datasheets-5906.pdf | TO-220-3 | 3 | 14 Weeks | 6.000006g | 3 | No | 1 | Single | 1 | 22 ns | 38ns | 34 ns | 66 ns | 23A | 20V | SILICON | SWITCHING | 600V | 227W Tc | TO-220AB | 650V | N-Channel | 2418pF @ 100V | 158m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 95nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFU9020PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfu9020pbf-datasheets-5922.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | 3 | 8 Weeks | 329.988449mg | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 42W | 1 | Other Transistors | 8.2 ns | 67ns | 25 ns | 12 ns | 9.9A | 20V | SILICON | DRAIN | SWITCHING | 50V | 42W Tc | 40A | 0.28Ohm | 250 mJ | -50V | P-Channel | 490pF @ 25V | -4 V | 280m Ω @ 5.7A, 10V | 4V @ 250μA | 9.9A Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| SUP60020E-GE3 | Vishay Siliconix | $2.59 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup60020ege3-datasheets-5926.pdf | TO-220-3 | 14 Weeks | 80V | 375W Tc | N-Channel | 10680pF @ 40V | 2.4m Ω @ 30A, 10V | 4V @ 250μA | 150A Tc | 227nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP15N60E-E3 | Vishay Siliconix | $8.85 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp15n60ee3-datasheets-5933.pdf | TO-220-3 | Lead Free | 19 Weeks | 6.000006g | 280mOhm | 3 | No | 1 | Single | 180W | 1 | TO-220AB | 1.35nF | 17 ns | 51ns | 33 ns | 35 ns | 15A | 20V | 600V | 180W Tc | 280mOhm | N-Channel | 1350pF @ 100V | 280mOhm @ 8A, 10V | 4V @ 250μA | 15A Tc | 78nC @ 10V | 280 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SIHG14N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihg14n50dge3-datasheets-5961.pdf | TO-247-3 | 15.87mm | 20.82mm | 5.31mm | Lead Free | 3 | 8 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 1 | 16 ns | 27ns | 26 ns | 29 ns | 14A | 30V | 100V | SILICON | DRAIN | SWITCHING | 3V | 208W Tc | TO-247AC | 0.4Ohm | 56 mJ | 500V | N-Channel | 1144pF @ 100V | 400m Ω @ 7A, 10V | 5V @ 250μA | 14A Tc | 58nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| SQP120N10-3M8_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp120n103m8ge3-datasheets-5976.pdf | TO-220-3 | 12 Weeks | TO-220AB | 100V | 250W Tc | N-Channel | 7230pF @ 25V | 3.8mOhm @ 20A, 10V | 3.5V @ 250μA | 120A Tc | 190nC @ 10V | 10V | ±20V |
