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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SQM60030E_GE3 | Vishay Siliconix | $2.06 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm60030ege3-datasheets-9119.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 80V | 80V | 375W Tc | 120A | 250A | 0.0032Ohm | 245 mJ | N-Channel | 12000pF @ 25V | 3.2m Ω @ 30A, 10V | 3.5V @ 250μA | 120A Tc | 165nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHP16N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sihp16n50ce3-datasheets-9522.pdf | TO-220-3 | 3 | 8 Weeks | 6.000006g | Unknown | 3 | yes | No | 260 | 3 | 1 | Single | 40 | 250W | 1 | FET General Purpose Power | 27 ns | 156ns | 31 ns | 29 ns | 16A | 30V | SILICON | SWITCHING | 3V | 250W Tc | TO-220AB | 40A | 500V | N-Channel | 1900pF @ 25V | 380m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 68nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRFBF30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfbf30pbf-datasheets-9527.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3.7Ohm | 3 | Tin | No | 1 | Single | 125W | 1 | TO-220AB | 1.2nF | 14 ns | 25ns | 30 ns | 90 ns | 3.6A | 20V | 900V | 4V | 125W Tc | 3.7Ohm | N-Channel | 1200pF @ 25V | 4 V | 3.7Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 78nC @ 10V | 3.7 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SQD50N06-09L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50n0609lge3-datasheets-9517.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 12 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 136W | 1 | TO-252, (D-Pak) | 3.065nF | 10 ns | 11ns | 8 ns | 27 ns | 50A | 20V | 60V | 2V | 136W Tc | 9mOhm | 60V | N-Channel | 3065pF @ 25V | 9mOhm @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 72nC @ 10V | 9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFZ44RPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2003 | /files/vishaysiliconix-irfz44rpbf-datasheets-9586.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 28MOhm | 3 | No | 1 | Single | 150W | 1 | TO-220AB | 1.9nF | 14 ns | 110ns | 92 ns | 45 ns | 50A | 20V | 60V | 4V | 150W Tc | 180 ns | 28mOhm | N-Channel | 1900pF @ 25V | 4 V | 28mOhm @ 31A, 10V | 4V @ 250μA | 50A Tc | 67nC @ 10V | 28 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIHP30N60E-E3 | Vishay Siliconix | $5.02 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp30n60ee3-datasheets-9594.pdf | TO-220-3 | 10.51mm | 15.49mm | 4.65mm | Lead Free | 17 Weeks | 6.000006g | Unknown | 125mOhm | 3 | No | 1 | Single | 250W | 1 | TO-220AB | 2.6nF | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | 600V | 2V | 250W Tc | 125mOhm | 600V | N-Channel | 2600pF @ 100V | 125mOhm @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 125 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IRF740SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/vishaysiliconix-irf740spbf-datasheets-9653.pdf | 400V | 10A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | Unknown | 550mOhm | 3 | No | 1 | Single | 125W | 1 | D2PAK | 1.4nF | 14 ns | 27ns | 24 ns | 50 ns | 10A | 20V | 400V | 4V | 3.1W Ta 125W Tc | 550mOhm | 400V | N-Channel | 1400pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 63nC @ 10V | 550 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIHB28N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sihb28n60efge3-datasheets-9668.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 21 Weeks | 1.946308g | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 24 ns | 40ns | 39 ns | 82 ns | 28A | 20V | SILICON | SWITCHING | 600V | 600V | 250W Tc | 75A | N-Channel | 2714pF @ 100V | 123m Ω @ 14A, 10V | 4V @ 250μA | 28A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SIHF35N60EF-GE3 | Vishay Siliconix | $5.24 |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf35n60efge3-datasheets-9677.pdf | TO-220-3 Full Pack | 21 Weeks | TO-220 Full Pack | 600V | 39W Tc | N-Channel | 2568pF @ 100V | 97mOhm @ 17A, 10V | 4V @ 250μA | 32A Tc | 134nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP35N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp35n60efge3-datasheets-9693.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 250W Tc | N-Channel | 2568pF @ 100V | 97mOhm @ 17A, 10V | 4V @ 250μA | 32A Tc | 134nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF28N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sihf28n60efge3-datasheets-9707.pdf | TO-220-3 Full Pack | 3 | 21 Weeks | 6.000006g | 123mOhm | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 24 ns | 40ns | 39 ns | 82 ns | 28A | 20V | SILICON | ISOLATED | SWITCHING | 39W Tc | TO-220AB | 75A | 600V | N-Channel | 2714pF @ 100V | 123m Ω @ 14A, 10V | 4V @ 250μA | 28A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SIHG24N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihg24n65ege3-datasheets-9723.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 14 Weeks | 38.000013g | Unknown | 145mOhm | 3 | No | 1 | Single | 250W | 1 | TO-247AC | 2.74nF | 24 ns | 84ns | 69 ns | 70 ns | 24A | 20V | 650V | 2V | 250W Tc | 145mOhm | 650V | N-Channel | 2740pF @ 100V | 145mOhm @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 145 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| SIHW33N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sihw33n60ege3-datasheets-9749.pdf | TO-3P-3 Full Pack | 3 | 19 Weeks | 38.000013g | Unknown | 3 | yes | No | 1 | Single | 1 | FET General Purpose Powers | 56 ns | 90ns | 80 ns | 150 ns | 33A | 4V | SILICON | SWITCHING | 2V | 278W Tc | TO-247AD | 88A | 0.099Ohm | 600V | N-Channel | 3508pF @ 100V | 99m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SIHB35N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb35n60efge3-datasheets-9754.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 21 Weeks | D2PAK (TO-263) | 600V | 250W Tc | N-Channel | 2568pF @ 100V | 97mOhm @ 17A, 10V | 4V @ 250μA | 32A Tc | 134nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG33N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihg33n60ege3-datasheets-9756.pdf | TO-247-3 | Lead Free | 14 Weeks | 38.000013g | Unknown | 3 | Tin | No | 1 | Single | 278W | 1 | TO-247AC | 3.508nF | 56 ns | 90ns | 80 ns | 150 ns | 33A | 20V | 600V | 2V | 278W Tc | 99mOhm | 600V | N-Channel | 3508pF @ 100V | 99mOhm @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 99 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIHD14N60E-GE3 | Vishay Siliconix | $1.90 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd14n60ege3-datasheets-9777.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | D-PAK (TO-252AA) | 600V | 147W Tc | N-Channel | 1205pF @ 100V | 309mOhm @ 7A, 10V | 4V @ 250μA | 13A Tc | 64nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG100N60E-GE3 | Vishay Siliconix | $8.06 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg100n60ege3-datasheets-9782.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 208W Tc | N-Channel | 1851pF @ 100V | 100mOhm @ 13A, 10V | 5V @ 250μA | 30A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHFB20N50K-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2017 | /files/vishaysiliconix-irfb20n50kpbf-datasheets-5495.pdf | TO-220-3 | 3 | 9 Weeks | yes | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 280W Tc | TO-220AB | 20A | 80A | 0.25Ohm | 330 mJ | N-Channel | 2870pF @ 25V | 250m Ω @ 12A, 10V | 5V @ 250μA | 20A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIHP28N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihp28n65efge3-datasheets-9802.pdf | TO-220-3 | 3 | 21 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 28A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 250W Tc | TO-220AB | 87A | 0.117Ohm | 427 mJ | N-Channel | 3249pF @ 100V | 117m Ω @ 14A, 10V | 4V @ 250μA | 28A Tc | 146nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPC60PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irfpc60pbf-datasheets-9807.pdf | 600V | 16A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 12 Weeks | 38.000013g | Unknown | 400mOhm | 3 | 1 | Single | 280W | 1 | TO-247-3 | 3.9nF | 19 ns | 54ns | 56 ns | 110 ns | 16A | 20V | 600V | 4V | 280W Tc | 920 ns | 400mOhm | 600V | N-Channel | 3900pF @ 25V | 4 V | 400mOhm @ 9.6A, 10V | 4V @ 250μA | 16A Tc | 210nC @ 10V | 400 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIHG35N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg35n60efge3-datasheets-9823.pdf | TO-247-3 | 21 Weeks | TO-247AC | 600V | 250W Tc | N-Channel | 2568pF @ 100V | 97mOhm @ 17A, 10V | 4V @ 250μA | 32A Tc | 134nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB065N60E-GE3 | Vishay Siliconix | $6.50 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb065n60ege3-datasheets-9834.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | D2PAK (TO-263) | 600V | 250W Tc | N-Channel | 2700pF @ 100V | 65mOhm @ 16A, 10V | 5V @ 250μA | 40A Tc | 74nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG28N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg28n60efge3-datasheets-9841.pdf | TO-247-3 | Lead Free | 3 | 21 Weeks | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 24 ns | 40ns | 39 ns | 82 ns | 28A | 20V | SILICON | DRAIN | SWITCHING | 250W Tc | TO-247AC | 75A | 600V | N-Channel | 2714pF @ 100V | 123m Ω @ 14A, 10V | 4V @ 250μA | 28A Tc | 120nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SIHG33N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihg33n65efge3-datasheets-9861.pdf | TO-247-3 | 3 | 21 Weeks | 3 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 31.6A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 4V | 313W Tc | TO-247AC | 0.109Ohm | 508 mJ | N-Channel | 4026pF @ 100V | 109m Ω @ 16.5A, 10V | 4V @ 250μA | 31.6A Tc | 171nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF065N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf065n60ege3-datasheets-9868.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220 Full Pack | 600V | 39W Tc | N-Channel | 2700pF @ 100V | 65mOhm @ 16A, 10V | 5V @ 250μA | 40A Tc | 74nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG039N60EF-GE3 | Vishay Siliconix | $10.17 |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg039n60efge3-datasheets-9983.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 357W Tc | N-Channel | 4323pF @ 100V | 40mOhm @ 32A, 10V | 5V @ 250μA | 61A Tc | 126nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG065N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg065n60ege3-datasheets-0023.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 250W Tc | N-Channel | 2700pF @ 100V | 65mOhm @ 16A, 10V | 5V @ 250μA | 40A Tc | 74nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHW70N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw70n60efge3-datasheets-0074.pdf | TO-247-3 | 3 | 21 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 520W Tc | TO-247AD | 229A | 0.038Ohm | 1706 mJ | N-Channel | 7500pF @ 100V | 38m Ω @ 35A, 10V | 4V @ 250μA | 70A Tc | 380nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG039N60E-GE3 | Vishay Siliconix | $7.43 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg039n60ege3-datasheets-0082.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 357W Tc | N-Channel | 4369pF @ 100V | 39mOhm @ 32A, 10V | 5V @ 250μA | 63A Tc | 126nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP050N60E-GE3 | Vishay Siliconix | $6.66 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp050n60ege3-datasheets-0118.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 278W Tc | N-Channel | 3459pF @ 100V | 50mOhm @ 23A, 10V | 5V @ 250μA | 51A Tc | 130nC @ 10V | 10V | ±30V |
