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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIHS36N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihs36n50de3-datasheets-2207.pdf | TO-247-3 | 16.1mm | 20.8mm | 5.3mm | 3 | 8 Weeks | 38.000013g | Unknown | 247 | No | 1 | Single | 446W | 1 | R-PSIP-T3 | 33 ns | 89ns | 68 ns | 79 ns | 36A | 30V | SILICON | SWITCHING | 500V | 500V | 3V | 446W Tc | TO-274AA | 332 mJ | N-Channel | 3233pF @ 100V | 130m Ω @ 18A, 10V | 5V @ 250μA | 36A Tc | 125nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| SIHG47N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihg47n60efge3-datasheets-2218.pdf | TO-247-3 | Lead Free | 3 | 22 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 1 | 30 ns | 56ns | 56 ns | 91 ns | 47A | 30V | SILICON | DRAIN | SWITCHING | 600V | 600V | 4V | 379W Tc | TO-247AC | 0.065Ohm | N-Channel | 4854pF @ 100V | 67m Ω @ 24A, 10V | 4V @ 250μA | 47A Tc | 225nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| SIHW47N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw47n60ege3-datasheets-2291.pdf | TO-3P-3 Full Pack | Lead Free | 3 | 19 Weeks | 38.000013g | Unknown | 64mOhm | 3 | yes | No | 1 | Single | 357W | 1 | FET General Purpose Powers | 50 ns | 25ns | 26 ns | 140 ns | 47A | 20V | SILICON | SWITCHING | 600V | 600V | 2.5V | 357W Tc | TO-247AD | N-Channel | 9620pF @ 100V | 64m Ω @ 24A, 10V | 4V @ 250μA | 47A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIHB35N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb35n60ege3-datasheets-2298.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 650V | 250W Tc | N-Channel | 2760pF @ 100V | 94m Ω @ 17A, 10V | 4V @ 250μA | 32A Tc | 132nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2334DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2334dst1ge3-datasheets-1710.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 15 Weeks | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 30 | 1.3W | 1 | FET General Purpose Powers | 10ns | 8 ns | 4.9A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 400mV | 1.3W Ta 1.7W Tc | 0.044Ohm | N-Channel | 634pF @ 15V | 400 mV | 44m Ω @ 4.2A, 4.5V | 1V @ 250μA | 4.9A Tc | 10nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| SIHG35N60E-GE3 | Vishay Siliconix | $5.27 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg35n60ege3-datasheets-2303.pdf | TO-247-3 | 18 Weeks | 600V | 250W Tc | N-Channel | 2760pF @ 100V | 94m Ω @ 17A, 10V | 4V @ 250μA | 32A Tc | 132nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG44N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihg44n65efge3-datasheets-2307.pdf | TO-247-3 | 3 | 21 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 650V | 650V | 417W Tc | TO-247AC | 46A | 154A | 0.073Ohm | 596 mJ | N-Channel | 5892pF @ 100V | 73m Ω @ 22A, 10V | 4V @ 250μA | 46A Tc | 278nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG73N60AE-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihg73n60aege3-datasheets-2318.pdf | TO-247-3 | 25.11mm | 14 Weeks | 1 | 417W | 150°C | 43 ns | 212 ns | 60A | 30V | 417W Tc | 600V | N-Channel | 5500pF @ 100V | 40m Ω @ 36.5A, 10V | 4V @ 250μA | 60A Tc | 394nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP38N60E-GE3 | Vishay Siliconix | $10.80 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp38n60ege3-datasheets-2323.pdf | TO-220-3 | 14 Weeks | 600V | 313W Tc | N-Channel | 3600pF @ 100V | 65m Ω @ 19A, 10V | 4V @ 250μA | 43A Tc | 183nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP33N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihp33n60efge3-datasheets-2335.pdf | TO-220-3 | 3 | 14 Weeks | 6.000006g | Unknown | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 28 ns | 43ns | 48 ns | 161 ns | 33A | 20V | SILICON | SWITCHING | 600V | 600V | 4V | 278W Tc | TO-220AB | 0.098Ohm | N-Channel | 3454pF @ 100V | 98m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 155nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| SIHG61N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg61n65efge3-datasheets-2352.pdf | TO-247-3 | 3 | 21 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 650V | 650V | 520W Tc | TO-247AC | 64A | 199A | 0.047Ohm | 1142 mJ | N-Channel | 7407pF @ 100V | 47m Ω @ 30.5A, 10V | 4V @ 250μA | 64A Tc | 371nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SUP85N10-10-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sup85n1010ge3-datasheets-2385.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 14 Weeks | 6.000006g | 3 | 1 | Single | 6.55nF | 12 ns | 55 ns | 85A | 20V | 100V | 3.75W Ta 250W Tc | 10.5mOhm | 100V | N-Channel | 6550pF @ 25V | 10.5mOhm @ 30A, 10V | 3V @ 250μA | 85A Tc | 160nC @ 10V | 10.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIHP065N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihp065n60ege3-datasheets-2394.pdf | TO-220-3 | 19.31mm | 14 Weeks | 1 | 250W | 150°C | 28 ns | 54 ns | 40A | 30V | 250W Tc | 600V | N-Channel | 2700pF @ 100V | 65m Ω @ 16A, 10V | 5V @ 250μA | 40A Tc | 98nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP24N65E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp24n65ege3-datasheets-6695.pdf | TO-220-3 | 10.51mm | 15.49mm | 4.65mm | Lead Free | 19 Weeks | 6.000006g | Unknown | 145mOhm | 3 | No | 1 | Single | 250W | 1 | TO-220AB | 2.74nF | 24 ns | 84ns | 69 ns | 70 ns | 24A | 20V | 650V | 2V | 250W Tc | 145mOhm | N-Channel | 2740pF @ 100V | 145mOhm @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 145 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| SIHG70N60AEF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihg70n60aefge3-datasheets-2450.pdf | TO-247-3 | 24.99mm | 21 Weeks | EAR99 | NOT SPECIFIED | 1 | NOT SPECIFIED | 417W | 150°C | 45 ns | 219 ns | 60A | 20V | 417W Tc | 600V | N-Channel | 5348pF @ 100V | 41m Ω @ 35A, 10V | 4V @ 250μA | 60A Tc | 410nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG24N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg24n65efge3-datasheets-2629.pdf | TO-247-3 | 21 Weeks | TO-247AC | 650V | 250W Tc | N-Channel | 2774pF @ 100V | 156mOhm @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP17N50LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp17n50lpbf-datasheets-2660.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 280mOhm | 3 | No | 1 | Single | 220W | 1 | TO-247-3 | 2.76nF | 21 ns | 51ns | 28 ns | 50 ns | 16A | 30V | 500V | 5V | 220W Tc | 320mOhm | N-Channel | 2760pF @ 25V | 320mOhm @ 9.9A, 10V | 5V @ 250μA | 16A Tc | 130nC @ 10V | 320 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| SIUD401ED-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siud401edt1ge3-datasheets-2675.pdf | PowerPAK® 0806 | 14 Weeks | PowerPAK® 0806 | 30V | 1.25W Ta | P-Channel | 33pF @ 15V | 1.573Ohm @ 200mA, 10V | 1.4V @ 250μA | 500mA Ta | 2nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2393DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2393dst1ge3-datasheets-3128.pdf | TO-236-3, SC-59, SOT-23-3 | 14 Weeks | SOT-23-3 (TO-236) | 30V | 1.3W Ta 2.5W Tc | P-Channel | 980pF @ 15V | 22.7mOhm @ 5A, 10V | 2.2V @ 250μA | 6.1A Ta 7.5A Tc | 25.2nC @ 10V | 4.5V 10V | +16V, -20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3456DDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3456ddvt1ge3-datasheets-0664.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | 40mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.7W | 1 | FET General Purpose Power | 12 ns | 13ns | 13 ns | 16 ns | 5A | 20V | SILICON | SWITCHING | 30V | 30V | 1.7W Ta 2.7W Tc | 5A | N-Channel | 325pF @ 15V | 40m Ω @ 5A, 10V | 3V @ 250μA | 6.3A Tc | 9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| SIA483ADJ-T1-GE3 | Vishay Siliconix | $0.44 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia483adjt1ge3-datasheets-3182.pdf | PowerPAK® SC-70-6 | 14 Weeks | PowerPAK® SC-70-6 Single | 30V | 3.4W Ta 17.9W Tc | P-Channel | 950pF @ 15V | 20mOhm @ 5A, 10V | 2.5V @ 250μA | 10.6A Ta 12A Tc | 26nC @ 10V | 4.5V 10V | +16V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA18BDP-T1-GE3 | Vishay Siliconix | $0.42 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira18bdpt1ge3-datasheets-3294.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 3.8W Ta 17W Tc | N-Channel | 680pF @ 15V | 6.83mOhm @ 10A, 10V | 2.4V @ 250μA | 19A Ta 40A Tc | 19nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQA403EJ-T1_GE3 | Vishay Siliconix | $0.53 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqa403ejt1ge3-datasheets-3338.pdf | PowerPAK® SC-70-6 | 12 Weeks | PowerPAK® SC-70-6 Single | 30V | 13.6W Tc | P-Channel | 1880pF @ 10V | 20mOhm @ 5A, 10V | 2.5V @ 250μA | 10A Tc | 33nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA14BDP-T1-GE3 | Vishay Siliconix | $0.35 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira14bdpt1ge3-datasheets-3342.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 3.7W Ta 36W Tc | N-Channel | 917pF @ 15V | 5.38mOhm @ 10A, 10V | 2.2V @ 250μA | 21A Ta 64A Tc | 22nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISH108DN-T1-GE3 | Vishay Siliconix | $0.61 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen II | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish108dnt1ge3-datasheets-3315.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 20V | 1.5W Ta | N-Channel | 4.9mOhm @ 22A, 10V | 2V @ 250μA | 14A Ta | 30nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA445EDJT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sia445edjtt1ge3-datasheets-3296.pdf | PowerPAK® SC-70-6 | 3 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 19W Tc | 12A | 50A | 0.0167Ohm | P-Channel | 2180pF @ 10V | 16.7m Ω @ 7A, 4.5V | 1.2V @ 250μA | 12A Tc | 69nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| IRFBF20LPBF | Vishay Siliconix | $0.41 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishay-irfbf20lpbf-datasheets-9860.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Lead Free | 8 Weeks | 2.387001g | 8Ohm | No | 1 | Single | 3.1W | 1 | I2PAK | 490pF | 8 ns | 21ns | 32 ns | 56 ns | 1.7A | 20V | 900V | 3.1W Ta 54W Tc | 8Ohm | 900V | N-Channel | 490pF @ 25V | 8Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 38nC @ 10V | 8 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIHP12N60E-GE3 | Vishay Siliconix | $1.10 |
Min: 1 Mult: 1 |
download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp12n60ege3-datasheets-3444.pdf | TO-220-3 | Lead Free | 14 Weeks | 6.000006g | Unknown | 380mOhm | 3 | No | 1 | Single | 147W | 1 | TO-220AB | 937pF | 14 ns | 19ns | 19 ns | 35 ns | 12A | 20V | 600V | 2V | 147W Tc | 320mOhm | 600V | N-Channel | 937pF @ 100V | 380mOhm @ 6A, 10V | 4V @ 250μA | 12A Tc | 58nC @ 10V | 380 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IRFS11N50APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfs11n50atrlp-datasheets-5178.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3 | 1 | Single | 170W | 1 | D2PAK | 1.423nF | 14 ns | 35ns | 28 ns | 32 ns | 11A | 30V | 500V | 4V | 170W Tc | 520mOhm | N-Channel | 1423pF @ 25V | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 520 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IRLI630GPBF | Vishay Siliconix | $2.38 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irli630gpbf-datasheets-3522.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 400mOhm | 3 | No | 1 | Single | TO-220-3 | 1.1nF | 8 ns | 57ns | 33 ns | 38 ns | 6.2A | 10V | 200V | 1V | 35W Tc | 400mOhm | 200V | N-Channel | 1100pF @ 25V | 400mOhm @ 3.7A, 5V | 2V @ 250μA | 6.2A Tc | 40nC @ 10V | 400 mΩ | 4V 5V | ±10V |
