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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| 2N7002K-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-2n7002kt1ge3-datasheets-5738.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.12mm | 1.397mm | Lead Free | 1.437803g | Unknown | 2Ohm | 3 | No | 1 | Single | 350mW | 1 | 150°C | SOT-23-3 (TO-236) | 30pF | 25 ns | 35 ns | 300mA | 20V | 60V | 2.5V | 350mW Ta | 2Ohm | 60V | N-Channel | 30pF @ 25V | 2 V | 2Ohm @ 500mA, 10V | 2.5V @ 250μA | 300mA Ta | 0.6nC @ 4.5V | 2 Ω | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIHG73N60E-GE3 | Vishay Siliconix | $9.82 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg73n60ege3-datasheets-0381.pdf | TO-247-3 | 15.87mm | 20.82mm | 5.31mm | Lead Free | 3 | 14 Weeks | 38.000013g | Unknown | 39mOhm | 3 | AVALANCHE RATED | Tin | No | 3 | 1 | Single | 520W | 1 | FET General Purpose Power | 63 ns | 105ns | 120 ns | 290 ns | 73A | 20V | SILICON | SWITCHING | 2V | 520W Tc | TO-247AC | 600V | N-Channel | 7700pF @ 100V | 39m Ω @ 36A, 10V | 4V @ 250μA | 73A Tc | 362nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| 2N7002-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-2n7002t1e3-datasheets-0519.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 1.437803g | Unknown | 7.5Ohm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | 15A | e3 | 60V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 200mW | 1 | FET General Purpose Powers | 150°C | 7 ns | 11 ns | 115mA | 20V | SILICON | SWITCHING | 2.1V | 200mW Ta | 5 pF | 60V | N-Channel | 50pF @ 25V | 2.1 V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 115mA Ta | 5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI2372DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2372dst1ge3-datasheets-0645.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 13 Weeks | 43mOhm | EAR99 | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 960mW Ta 1.7W Tc | TO-236AB | 5.3A | N-Channel | 288pF @ 15V | 33m Ω @ 3A, 10V | 2.5V @ 250μA | 4A Ta 5.3A Tc | 8.9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI4776DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si4776dyt1ge3-datasheets-1618.pdf | 8-SOIC (0.154, 3.90mm Width) | 27 Weeks | 540.001716mg | 8 | 1 | 2.5W | 1 | 8-SO | 10 ns | 11ns | 6 ns | 11 ns | 11.9A | 20V | 30V | 4.1W Tc | 13mOhm | N-Channel | 521pF @ 15V | 16mOhm @ 10A, 10V | 2.3V @ 1mA | 11.9A Tc | 17.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIUD403ED-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-siud403edt1ge3-datasheets-1702.pdf | PowerPAK® 0806 | 3 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 1.25W Ta | P-Channel | 31pF @ 10V | 1.25 Ω @ 300mA, 4.5V | 900mV @ 250μA | 500mA Ta | 1nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI740GLCPBF | Vishay Siliconix | $2.33 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi740glcpbf-datasheets-1795.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | 550mOhm | 3 | No | 1 | Single | 40W | 1 | TO-220-3 | 1.1nF | 11 ns | 31ns | 20 ns | 25 ns | 5.7A | 30V | 400V | 40W Tc | 550mOhm | N-Channel | 1100pF @ 25V | 550mOhm @ 3.4A, 10V | 4V @ 250μA | 5.7A Tc | 39nC @ 10V | 550 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SIHG22N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihg22n50de3-datasheets-1811.pdf | TO-247-3 | Lead Free | 3 | 13 Weeks | 38.000013g | 3 | No | SINGLE | 1 | 312W | 1 | 21 ns | 42ns | 40 ns | 47 ns | 22A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 312W Tc | TO-247AC | 67A | N-Channel | 1938pF @ 100V | 230m Ω @ 11A, 10V | 5V @ 250μA | 22A Tc | 98nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N60AE-GE3 | Vishay Siliconix | $3.16 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg22n60aege3-datasheets-1833.pdf | TO-247-3 | 14 Weeks | 600V | 179W Tc | N-Channel | 1451pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 20A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP21N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihp21n60efge3-datasheets-1837.pdf | TO-220-3 | Lead Free | 3 | 14 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 21A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 227W Tc | TO-220AB | 53A | 0.176Ohm | 367 mJ | N-Channel | 2030pF @ 100V | 176m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 84nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihb22n60ee3-datasheets-1845.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 19 Weeks | 1.437803g | 3 | AVALANCHE RATED | No | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 18 ns | 68ns | 54 ns | 66 ns | 21A | 20V | SILICON | SWITCHING | 600V | 600V | 227W Tc | 56A | N-Channel | 1920pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SIHP22N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihp22n60ege3-datasheets-1850.pdf | TO-220-3 | 10.51mm | 9.01mm | 4.65mm | Lead Free | 3 | 14 Weeks | 6.000006g | Unknown | 180mOhm | 3 | Tin | No | 1 | Single | 227W | 1 | 18 ns | 68ns | 54 ns | 59 ns | 21A | 20V | SILICON | SWITCHING | 600V | 600V | 2V | 227W Tc | TO-220AB | 56A | N-Channel | 1920pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SIHG22N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihg22n60ege3-datasheets-1867.pdf | TO-247-3 | 15.87mm | 20.82mm | 5.31mm | Lead Free | 14 Weeks | 38.000013g | Unknown | 180mOhm | 3 | No | 1 | Single | 227W | 1 | TO-247AC | 1.92nF | 18 ns | 68ns | 54 ns | 59 ns | 21A | 20V | 600V | 2V | 227W Tc | 180mOhm | 600V | N-Channel | 1920pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 180 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRFBC40SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfbc40spbf-datasheets-1879.pdf | 600V | 6.2A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | Unknown | 3 | Tin | No | 1 | Single | 3.1W | 1 | D2PAK | 1.3nF | 13 ns | 18ns | 20 ns | 55 ns | 6.2A | 20V | 600V | 4V | 3.1W Ta 130W Tc | 1.2Ohm | 600V | N-Channel | 1300pF @ 25V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 60nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFP340PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp340pbf-datasheets-1883.pdf | 400V | 11A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 550mOhm | 3 | No | 1 | Single | 150W | 1 | TO-247-3 | 1.4nF | 14 ns | 27ns | 24 ns | 50 ns | 11A | 20V | 400V | 4V | 150W Tc | 550mOhm | 400V | N-Channel | 1400pF @ 25V | 4 V | 550mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 62nC @ 10V | 550 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIHP12N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sihf12n50ce3-datasheets-6578.pdf | TO-220-3 | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 555mOhm | 3 | yes | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 208W | 1 | FET General Purpose Power | 18 ns | 35ns | 6 ns | 23 ns | 12A | 500V | SILICON | DRAIN | SWITCHING | 3V | 208W Tc | TO-220AB | 28A | N-Channel | 1375pF @ 25V | 555m Ω @ 4A, 10V | 5V @ 250μA | 12A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRFPE30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfpe30pbf-datasheets-1944.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 8 Weeks | 38.000013g | 3 | No | 1 | Single | 125W | 1 | TO-247-3 | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 4.1A | 20V | 800V | 125W Tc | 3Ohm | 800V | N-Channel | 1300pF @ 25V | 3Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFBC40ASPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfbc40astrlpbf-datasheets-5609.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 1.2Ohm | 3 | No | 1 | Single | 125W | 1 | D2PAK | 1.036nF | 13 ns | 23ns | 18 ns | 31 ns | 6.2A | 30V | 600V | 125W Tc | 1.2Ohm | 600V | N-Channel | 1036pF @ 25V | 4 V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 42nC @ 10V | 1.2 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SIHH20N50E-T1-GE3 | Vishay Siliconix | $3.93 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh20n50et1ge3-datasheets-1970.pdf | 8-PowerTDFN | 18 Weeks | 500V | 174W Tc | N-Channel | 2063pF @ 100V | 147m Ω @ 10A, 10V | 4V @ 250μA | 22A Tc | 84nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG25N60EFL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg25n60eflge3-datasheets-1972.pdf | TO-247-3 | 21 Weeks | 600V | 250W Tc | N-Channel | 2274pF @ 100V | 146m Ω @ 12.5A, 10V | 5V @ 250μA | 25A Tc | 75nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP30N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihp30n60ee3-datasheets-9594.pdf | TO-220-3 | 10.51mm | 15.49mm | 4.65mm | Lead Free | 14 Weeks | 6.000006g | Unknown | 125mOhm | 3 | Tin | No | 1 | Single | 250W | 1 | 2.6nF | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | 600V | 2V | 250W Tc | 125mOhm | N-Channel | 2600pF @ 100V | 125mOhm @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 125 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIHP25N60EFL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihp25n60eflge3-datasheets-2035.pdf | TO-220-3 | 19.31mm | 21 Weeks | 1 | 250W | 150°C | 25 ns | 47 ns | 25A | 30V | 250W Tc | 600V | N-Channel | 2274pF @ 100V | 146m Ω @ 12.5A, 10V | 5V @ 250μA | 25A Tc | 75nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP17N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/vishaysiliconix-sihp17n80ege3-datasheets-2044.pdf | TO-220-3 | 14 Weeks | 800V | 208W Tc | N-Channel | 2408pF @ 100V | 290m Ω @ 8.5A, 10V | 4V @ 250μA | 15A Tc | 122nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUG90090E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sug90090ege3-datasheets-2051.pdf | TO-247-3 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 200V | 395W Tc | N-Channel | 5220pF @ 100V | 9.5m Ω @ 20A, 10V | 4V @ 250μA | 100A Tc | 129nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB24N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb24n65ege3-datasheets-2054.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 14 Weeks | 1.437803g | Unknown | 145mOhm | 3 | Tin | No | 1 | Single | 250W | 1 | D2PAK | 2.74nF | 24 ns | 84ns | 69 ns | 70 ns | 24A | 20V | 650V | 2V | 250W Tc | 145mOhm | 650V | N-Channel | 2740pF @ 100V | 145mOhm @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 145 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SIHB21N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihb21n60efge3-datasheets-2058.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 21A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 227W Tc | 53A | 0.176Ohm | 367 mJ | N-Channel | 2030pF @ 100V | 176m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 84nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF35N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf35n60ege3-datasheets-2063.pdf | TO-220-3 Full Pack | 18 Weeks | 600V | 39W Tc | N-Channel | 2760pF @ 100V | 94m Ω @ 17A, 10V | 4V @ 250μA | 32A Tc | 132nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP35N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihp35n60ege3-datasheets-2067.pdf | TO-220-3 | 14 Weeks | 600V | 250W Tc | N-Channel | 2760pF @ 100V | 94m Ω @ 17A, 10V | 4V @ 250μA | 32A Tc | 132nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG23N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TA | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihg23n60ege3-datasheets-2090.pdf | TO-247-3 | 3 | 14 Weeks | 38.000013g | 158mOhm | NO | 1 | 1 | R-PSFM-T3 | 23A | SILICON | DRAIN | SWITCHING | 600V | 600V | 227W Tc | TO-247AC | 63A | 353 mJ | N-Channel | 2418pF @ 100V | 158m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 95nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG47N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihg47n65ege3-datasheets-2191.pdf | TO-247-3 | Lead Free | 3 | 14 Weeks | 38.000013g | 3 | No | 1 | Single | 417W | 1 | 47 ns | 87ns | 103 ns | 156 ns | 47A | 20V | SILICON | SWITCHING | 650V | 650V | 417W Tc | TO-247AC | 0.072Ohm | N-Channel | 5682pF @ 100V | 72m Ω @ 24A, 10V | 4V @ 250μA | 47A Tc | 273nC @ 10V | 10V | ±30V |
