| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI4850EY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4850eyt1e3-datasheets-8689.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 3.3W | 1 | FET General Purpose Powers | 10 ns | 10ns | 12 ns | 25 ns | 6A | 20V | SILICON | SWITCHING | 3V | 1.7W Ta | 6A | 0.022Ohm | 60V | N-Channel | 3 V | 22m Ω @ 6A, 10V | 3V @ 250μA | 6A Ta | 27nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SQD40N06-14L_GE3 | Vishay Siliconix | $1.62 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40n0614lge3-datasheets-8291.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 60V | 75W Tc | N-Channel | 2105pF @ 25V | 14mOhm @ 20A, 10V | 2.5V @ 250μA | 40A Tc | 51nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR414DP-T1-GE3 | Vishay Siliconix | $3.46 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir414dpt1ge3-datasheets-8405.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 2.8mOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 8 | 1 | 5.4W | 1 | R-PDSO-F5 | 33 ns | 22ns | 13 ns | 42 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1V | 5.4W Ta 83W Tc | 33A | 70A | N-Channel | 4750pF @ 20V | 90ns | 77ns | 1 V | 2.8m Ω @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 117nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SIR800DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sir800dpt1ge3-datasheets-8428.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5.2W | 1 | FET General Purpose Power | R-XDSO-C5 | 27 ns | 15ns | 27 ns | 70 ns | 50A | 12V | SILICON | DRAIN | 600mV | 5.2W Ta 69W Tc | 35.4A | 0.0023Ohm | 45 mJ | 20V | N-Channel | 5125pF @ 10V | 600 mV | 2.3m Ω @ 15A, 10V | 1.5V @ 250μA | 50A Tc | 133nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||
| IRF610PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irf610pbf-datasheets-8599.pdf | 200V | 3.3A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 1.5Ohm | 3 | No | 200V | 1 | Single | 36W | 1 | TO-220AB | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 3.3A | 20V | 200V | 4V | 36W Tc | 310 ns | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 4 V | 1.5Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFD110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfd110pbf-datasheets-8803.pdf | 100V | 1A | 4-DIP (0.300, 7.62mm) | 5mm | 4.57mm | 6.29mm | Lead Free | 3 | 8 Weeks | Unknown | 540mOhm | 4 | 2.54mm | EAR99 | DUAL | NOT SPECIFIED | 4 | 1 | Single | NOT SPECIFIED | 1.3W | 1 | Not Qualified | 175°C | R-PDIP-T3 | 6.9 ns | 16ns | 16 ns | 15 ns | 1A | 20V | 100V | SILICON | DRAIN | SWITCHING | 7.62 mm | 4V | 1.3W Ta | 200 ns | 1A | 100V | N-Channel | 180pF @ 25V | 4 V | 540m Ω @ 600mA, 10V | 4V @ 250μA | 1A Ta | 8.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI4488DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4488dyt1e3-datasheets-8822.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 50mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.56W | 1 | FET General Purpose Powers | 12 ns | 7ns | 7 ns | 22 ns | 5A | 20V | SILICON | 2V | 1.56W Ta | 150V | N-Channel | 2 V | 50m Ω @ 5A, 10V | 2V @ 250μA (Min) | 3.5A Ta | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI4190ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4190adyt1ge3-datasheets-8842.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 8.8MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 3W | 1 | 150°C | 12 ns | 34 ns | 13A | 20V | SILICON | SWITCHING | 1.5V | 3W Ta 6W Tc | 100V | N-Channel | 1970pF @ 50V | 1.5 V | 8.8m Ω @ 15A, 10V | 2.8V @ 250μA | 18.4A Tc | 67nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFD9014PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/vishaysiliconix-irfd9014pbf-datasheets-8922.pdf | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | No SVHC | 500mOhm | 4 | 2.54mm | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 270pF | 11 ns | 63ns | 63 ns | 10 ns | 1.1A | 20V | -60V | 60V | 7.62 mm | -4V | 1.3W Ta | 500mOhm | 60V | P-Channel | 270pF @ 25V | -4 V | 500mOhm @ 660mA, 10V | 4V @ 250μA | 1.1A Ta | 12nC @ 10V | 500 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFD014PBF | Vishay Siliconix | $1.17 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd014pbf-datasheets-8969.pdf | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | Unknown | 200mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 310pF | 10 ns | 50ns | 50 ns | 13 ns | 1.7A | 20V | 60V | 4V | 1.3W Ta | 140 ns | 200mOhm | 60V | N-Channel | 310pF @ 25V | 200mOhm @ 1A, 10V | 4V @ 250μA | 1.7A Ta | 11nC @ 10V | 200 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SQJ850EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sqj850ept1ge3-datasheets-8440.pdf | PowerPAK® SO-8 | 1.267mm | Lead Free | 12 Weeks | 506.605978mg | Unknown | 23mOhm | 8 | No | 1 | Single | 45W | 1 | 175°C | PowerPAK® SO-8 | 1.225nF | 21 ns | 15ns | 8 ns | 22 ns | 24A | 20V | 60V | 2V | 45W Tc | 19mOhm | 60V | N-Channel | 1225pF @ 30V | 2 V | 23mOhm @ 10.3A, 10V | 2.5V @ 250μA | 24A Tc | 30nC @ 10V | 23 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI7114DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7114dnt1e3-datasheets-7743.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 7.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 45 ns | 18.3A | 20V | SILICON | DRAIN | SWITCHING | 30V | 1V | 1V | 1.5W Ta | 60A | 42 mJ | N-Channel | 1 V | 7.5m Ω @ 18.3A, 10V | 3V @ 250μA | 11.7A Ta | 19nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIR692DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir692dpt1re3-datasheets-8661.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 250V | 104W Tc | N-Channel | 1405pF @ 125V | 63m Ω @ 10A, 10V | 4V @ 250μA | 24.2A Tc | 30nC @ 7.5V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9510PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf9510pbf-datasheets-9175.pdf | -100V | -4A | TO-220-3 | 10.41mm | 19.89mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 1.2Ohm | 3 | No | 1 | Single | 43W | 1 | 175°C | TO-220AB | 200pF | 10 ns | 27ns | 17 ns | 15 ns | -4A | 20V | 100V | -2V | 43W Tc | 160 ns | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | -4 V | 1.2Ohm @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFD120PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfd120pbf-datasheets-9316.pdf | 100V | 1.3A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 4 | 8 Weeks | Unknown | 270mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | DUAL | 4 | Single | 1.3W | 1 | FET General Purpose Powers | 6.8 ns | 27ns | 27 ns | 18 ns | 1.3A | 20V | SILICON | DRAIN | SWITCHING | 4V | 1.3W Ta | 260 ns | 100V | N-Channel | 360pF @ 25V | 270m Ω @ 780mA, 10V | 4V @ 250μA | 1.3A Ta | 16nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFU120PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfu120pbf-datasheets-9324.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 270mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | 6.8 ns | 27ns | 17 ns | 18 ns | 7.7A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 42W Tc | 100V | N-Channel | 360pF @ 25V | 4 V | 270m Ω @ 4.6A, 10V | 4V @ 250μA | 7.7A Tc | 16nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF520PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irf520pbf-datasheets-9409.pdf | 100V | 9.2A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 270mOhm | 3 | Tin | No | 1 | Single | 60W | 1 | TO-220AB | 360pF | 8.8 ns | 30ns | 20 ns | 19 ns | 9.2A | 20V | 100V | 4V | 60W Tc | 260 ns | 270mOhm | N-Channel | 360pF @ 25V | 10 V | 270mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 16nC @ 10V | 270 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SUD25N15-52-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sud25n1552e3-datasheets-9329.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.507mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 52mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | 1 | Single | 3W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 15 ns | 70ns | 60 ns | 25 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 4V | 3W Ta 136W Tc | 50A | 150V | N-Channel | 1725pF @ 25V | 4 V | 52m Ω @ 5A, 10V | 4V @ 250μA | 25A Tc | 40nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRLD110PBF | Vishay Siliconix | $1.42 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irld110pbf-datasheets-9501.pdf | 100V | 1A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 8 Weeks | Unknown | 540mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 250pF | 9.3 ns | 47ns | 47 ns | 16 ns | 1A | 10V | 100V | 2V | 1.3W Ta | 540mOhm | 100V | N-Channel | 250pF @ 25V | 2 V | 540mOhm @ 600mA, 5V | 2V @ 250μA | 1A Ta | 6.1nC @ 5V | 540 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| SIR871DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir871dpt1ge3-datasheets-9512.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | EAR99 | unknown | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 89W Tc | 48A | 300A | 0.02Ohm | 61 mJ | P-Channel | 3395pF @ 50V | 20m Ω @ 20A, 10V | 2.6V @ 250μA | 48A Tc | 90nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7812DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7812dnt1ge3-datasheets-0414.pdf | PowerPAK® 1212-8 | 3.05mm | 1.12mm | 3.05mm | Lead Free | 5 | 14 Weeks | No SVHC | 37mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.8W | 1 | FET General Purpose Powers | 150°C | S-XDSO-C5 | 15 ns | 20ns | 10 ns | 35 ns | 7.2A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.8W Ta 52W Tc | 25A | 75V | N-Channel | 840pF @ 35V | 37m Ω @ 7.2A, 10V | 3V @ 250μA | 16A Tc | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIR404DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir404dpt1ge3-datasheets-9526.pdf | PowerPAK® SO-8 | 6.15mm | 1.04mm | 5.15mm | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 6.25W | 1 | FET General Purpose Powers | R-XDSO-C5 | 35 ns | 20ns | 26 ns | 123 ns | 45.6A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 6.25W Ta 104W Tc | 60A | 20V | N-Channel | 8130pF @ 10V | 1.6m Ω @ 20A, 10V | 1.5V @ 250μA | 60A Tc | 97nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||
| SI7115DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7115dnt1ge3-datasheets-0397.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | 11 ns | 28ns | 35 ns | 52 ns | 2.3A | 20V | SILICON | DRAIN | SWITCHING | 150V | 52W Tc | 0.295Ohm | -150V | P-Channel | 1190pF @ 50V | 295m Ω @ 4A, 10V | 4V @ 250μA | 8.9A Tc | 42nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SUD80460E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sud80460ege3-datasheets-9664.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 2 | 14 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 65.2W | 1 | 175°C | R-PSSO-G2 | 8 ns | 15 ns | 42A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 65.2W Tc | 40A | 0.0447Ohm | 150V | N-Channel | 560pF @ 50V | 44.7m Ω @ 8.3A, 10V | 4V @ 250μA | 42A Tc | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFRC20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irfrc20trpbf-datasheets-2433.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 4.4Ohm | 3 | Tin | No | 1 | Single | 2.5W | 1 | D-Pak | 350pF | 10 ns | 23ns | 25 ns | 30 ns | 2A | 20V | 600V | 4V | 2.5W Ta 42W Tc | 580 ns | 4.4Ohm | 600V | N-Channel | 350pF @ 25V | 4 V | 4.4Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 18nC @ 10V | 4.4 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFZ14PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfz14pbf-datasheets-9763.pdf | 60V | 10A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 200mOhm | 3 | yes | EAR99 | No | 3 | 1 | Single | 36W | 1 | 10 ns | 50ns | 19 ns | 13 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 2V | 43W Tc | TO-220AB | 140 ns | 40A | 47 mJ | 60V | N-Channel | 300pF @ 25V | 4 V | 200m Ω @ 6A, 10V | 4V @ 250μA | 10A Tc | 11nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIR870ADP-T1-RE3 | Vishay Siliconix | $28.21 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishay-sir870adpt1re3-datasheets-3418.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 100V | 104W Tc | 5.5mOhm | N-Channel | 2866pF @ 50V | 6.6mOhm @ 20A, 10V | 3V @ 250μA | 60A Tc | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR870ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sidr870adpt1ge3-datasheets-9417.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 100V | 125W Tc | N-Channel | 2866pF @ 50V | 6.6m Ω @ 20A, 10V | 3V @ 250μA | 95A Tc | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z14PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irf9z14pbf-datasheets-0020.pdf | -60V | -6.7A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 500mOhm | 3 | No | 1 | Single | 43W | 1 | TO-220AB | 270pF | 11 ns | 63ns | 31 ns | 10 ns | -6.7A | 20V | 60V | -4V | 43W Tc | 500mOhm | -60V | P-Channel | 270pF @ 25V | -2 V | 500mOhm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFD220PBF | Vishay Siliconix | $2.78 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd220pbf-datasheets-0078.pdf | 4-DIP (0.300, 7.62mm) | 8 Weeks | 4-DIP, Hexdip, HVMDIP | 200V | 1W Ta | N-Channel | 260pF @ 25V | 800mOhm @ 480mA, 10V | 4V @ 250μA | 800mA Ta | 14nC @ 10V | 10V | ±20V |
Please send RFQ , we will respond immediately.