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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SI7958DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7958dpt1e3-datasheets-4780.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 506.605978mg | Unknown | 16.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7958 | 8 | 2 | Dual | 40 | 2 | FET General Purpose Power | R-XDSO-C6 | 17 ns | 17ns | 17 ns | 66 ns | 11.3A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 3V | 40A | 61 mJ | 40V | 2 N-Channel (Dual) | 16.5m Ω @ 11.3A, 10V | 3V @ 250μA | 7.2A | 75nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||
| SI7945DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7945dpt1e3-datasheets-4778.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | Unknown | 20MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7945 | 8 | Dual | 40 | 1.4W | 2 | Other Transistors | R-XDSO-C6 | 15 ns | 15ns | 15 ns | 130 ns | 10.9A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -3V | 7A | 30A | 30V | 2 P-Channel (Dual) | 20 V | 20m Ω @ 10.9A, 10V | 3V @ 250μA | 7A | 74nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||
| SI6963BDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si6963bdqt1e3-datasheets-4674.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 8 | 45mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 830mW | GULL WING | 260 | SI6963 | 8 | Dual | 30 | 830mW | 2 | Other Transistors | 33 ns | 57ns | 57 ns | 65 ns | -3.9A | 12V | SILICON | METAL-OXIDE SEMICONDUCTOR | 3.4A | 20V | 2 P-Channel (Dual) | 45m Ω @ 3.9A, 4.5V | 1.4V @ 250μA | 3.4A | 11nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| NTGD3149CT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-ntgd3149ct1g-datasheets-5489.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 5 days ago) | yes | EAR99 | e3 | Tin (Sn) | 900mW | GULL WING | NOT SPECIFIED | 6 | Dual | NOT SPECIFIED | 900mW | 2 | Not Qualified | 5.3ns | 29.5 ns | 33.3 ns | 3.5A | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 20V | N and P-Channel | 387pF @ 10V | 60m Ω @ 3.5A, 4.5V | 1V @ 250μA | 3.2A 2.4A | 5.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SIA911EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia911edjt1ge3-datasheets-5502.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 750μm | 2.05mm | 28.009329mg | 101mOhm | 7.8W | SIA911 | 2 | PowerPAK® SC-70-6 Dual | 32 ns | 70ns | 70 ns | 990 ns | -4.5A | 8V | 20V | 7.8W | 192mOhm | 2 P-Channel (Dual) | 101mOhm @ 2.7A, 4.5V | 1V @ 250μA | 4.5A | 11nC @ 8V | Logic Level Gate | 101 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| SIA917DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia917djt1ge3-datasheets-5480.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | Unknown | 110mOhm | 6 | yes | EAR99 | No | 6.5W | 260 | SIA917 | 6 | Dual | 40 | 2 | Other Transistors | 20 ns | 45ns | 10 ns | 15 ns | -4.5A | 12V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 3.3A | 10A | -20V | 2 P-Channel (Dual) | 250pF @ 10V | -1 V | 110m Ω @ 2.5A, 4.5V | 1.5V @ 250μA | 4.5A | 9nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SI4226DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4226dyt1ge3-datasheets-5518.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | 8 | yes | EAR99 | No | e3 | MATTE TIN | 2W | GULL WING | 260 | SI4226 | 8 | 2 | Dual | 30 | 2W | 2 | 14 ns | 10ns | 8 ns | 30 ns | 8A | 12V | SILICON | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | 3.2W | 7.5A | 0.0195Ohm | 25V | 2 N-Channel (Dual) | 1255pF @ 15V | 19.5m Ω @ 7A, 4.5V | 2V @ 250μA | 36nC @ 10V | Standard | |||||||||||||||||||||||||||||||
| SIA912DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia912djt1ge3-datasheets-5454.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | Unknown | 40MOhm | 6 | yes | EAR99 | No | 1.9W | 260 | SIA912 | 6 | Dual | 40 | 1.9W | 2 | 5 ns | 15ns | 15 ns | 35 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 1V | 6.5W | 12V | 2 N-Channel (Dual) | 400pF @ 6V | 1 V | 40m Ω @ 4.2A, 4.5V | 1V @ 250μA | 11.5nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SI6928DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si6928dqt1e3-datasheets-4686.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 35MOhm | 8 | No | 1W | SI6928 | Dual | 1W | 2 | 8-TSSOP | 12 ns | 9ns | 9 ns | 25 ns | 4A | 20V | 30V | 1W | 35mOhm | 30V | 2 N-Channel (Dual) | 35mOhm @ 4A, 10V | 1V @ 250μA | 4A | 14nC @ 5V | Logic Level Gate | 35 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| IRF7756TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | RoHS Compliant | 2009 | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | No SVHC | 8 | 1W | IRF7756PBF | Dual | 1W | 2 | 8-TSSOP | 1.4nF | -4.3A | 8V | -12V | 12V | 1W | 40mOhm | -12V | 2 P-Channel (Dual) | 1400pF @ 10V | -900 mV | 40mOhm @ 4.3A, 4.5V | 900mV @ 250μA | 4.3A | 18nC @ 4.5V | Logic Level Gate | 40 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| TPC8208(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2003 | /files/toshiba-tpc8208te12lqm-datasheets-9989.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | 750mW | TPC*208 | 1.5W | 8-SOP (5.5x6.0) | 780pF | 5ns | 2.7 ns | 5A | 12V | 20V | 450mW | 50mOhm | 20V | 2 N-Channel (Dual) | 780pF @ 10V | 50mOhm @ 2.5A, 4V | 1.2V @ 200μA | 5A | 9.5nC @ 5V | Logic Level Gate | 50 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8211(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2007 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8-SOP (5.5x6.0) | 30V | 450mW | 2 N-Channel (Dual) | 1250pF @ 10V | 36mOhm @ 3A, 10V | 2.5V @ 1mA | 5.5A | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7750TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | RoHS Compliant | 2009 | /files/infineontechnologies-irf7750trpbf-datasheets-5545.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3.0988mm | 1.0414mm | 4.4958mm | No SVHC | 8 | No | 1W | IRF7750PBF | Dual | 1W | 2 | 8-TSSOP | 1.7nF | 15 ns | 54ns | 210 ns | 180 ns | 4.7A | 12V | -20V | 20V | -1.2V | 1W | 55mOhm | -20V | 2 P-Channel (Dual) | 1700pF @ 15V | -1.2 V | 30mOhm @ 4.7A, 4.5V | 1.2V @ 250μA | 4.7A | 39nC @ 5V | Logic Level Gate | 30 mΩ | ||||||||||||||||||||||||||||||||||||
| SIB914DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sib914dkt1ge3-datasheets-5475.pdf | PowerPAK® SC-75-6L Dual | 1.6mm | 750μm | 1.6mm | Lead Free | 6 | 95.991485mg | Unknown | 113mOhm | 6 | yes | EAR99 | Tin | No | 3.1W | C BEND | 260 | SIB914 | 6 | 2 | Dual | 40 | 1.1W | 2 | FET General Purpose Power | 4 ns | 7ns | 7 ns | 22 ns | 1.5A | 5V | SILICON | DRAIN | SWITCHING | 8V | METAL-OXIDE SEMICONDUCTOR | 800mV | 8V | 2 N-Channel (Dual) | 125pF @ 4V | 800 mV | 113m Ω @ 2.5A, 4.5V | 800mV @ 250μA | 2.6nC @ 5V | Standard | ||||||||||||||||||||||||||||
| DMP2066LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-dmp2066lsd13-datasheets-5424.pdf | 8-SOIC (0.154, 3.90mm Width) | 5.3mm | 1.5mm | 4.1mm | Lead Free | 8 | 850.995985mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | DMP2066LSD | 8 | 40 | 2W | 2 | Other Transistors | 4.4 ns | 9.9ns | 23.4 ns | 28 ns | 5.8A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.04Ohm | 2 P-Channel (Dual) | 820pF @ 15V | 40m Ω @ 4.6A, 4.5V | 1.2V @ 250μA | 10.1nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SIA913DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sia913djt1ge3-datasheets-5462.pdf | PowerPAK® SC-70-6 Dual | Unknown | 70mOhm | 6 | No | 1.9W | SIA913 | Dual | 1.9W | PowerPAK® SC-70-6 Dual | 400pF | 15 ns | 25ns | 10 ns | 20 ns | -4.5A | 8V | 12V | -1V | 6.5W | 70mOhm | 12V | 2 P-Channel (Dual) | 400pF @ 6V | -1 V | 70mOhm @ 3.3A, 4.5V | 1V @ 250μA | 4.5A | 12nC @ 8V | Standard | 70 mΩ | |||||||||||||||||||||||||||||||||||||||||
| SIA511DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sia511djt1ge3-datasheets-5472.pdf | PowerPAK® SC-70-6 Dual | 6 | Unknown | 6 | EAR99 | No | 6.5W | SIA511 | 6 | Dual | 6.5W | 2 | 12ns | 10 ns | 20 ns | 4.5A | 8V | 12V | 1V | 12V | N and P-Channel | 400pF @ 6V | 1 V | 40m Ω @ 4.2A, 4.5V | 1V @ 250μA | 12nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| SI5519DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si5519dut1ge3-datasheets-5417.pdf | PowerPAK® ChipFET™ Dual | 3mm | 750μm | 1.9mm | 8 | 2.27W | SI5519 | 2 | 2.27W | 2 | PowerPAK® ChipFet Dual | 660pF | 4.5 ns | 11ns | 8.5 ns | 25 ns | 6A | 12V | 20V | 10.4W | 64mOhm | N and P-Channel | 660pF @ 10V | 36mOhm @ 6.1A, 4.5V | 1.8V @ 250μA | 6A | 17.5nC @ 10V | Standard | 36 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| APTM120A80FT1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/microsemicorporation-aptm120a80ft1g-datasheets-5487.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 357W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 357W | 2 | FET General Purpose Power | Not Qualified | 14A | 30V | SILICON | ISOLATED | SWITCHING | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 90A | 0.96Ohm | 2 N-Channel (Half Bridge) | 6696pF @ 25V | 960m Ω @ 12A, 10V | 5V @ 2.5mA | 260nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||
| DMN5L06VA-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn5l06v7-datasheets-5361.pdf | SOT-563, SOT-666 | 1.6mm | 600μm | 1.2mm | 6 | 3.005049mg | 6 | EAR99 | LOW CAPACITANCE | No | e3 | Matte Tin (Sn) | 150mW | FLAT | 260 | 6 | 2 | Dual | 40 | 2 | FET General Purpose Power | 280mA | 20V | SILICON | SWITCHING | 50V | METAL-OXIDE SEMICONDUCTOR | 3Ohm | 5 pF | 50V | 2 N-Channel (Dual) | 50pF @ 25V | 3 Ω @ 200mA, 2.7V | 1.2V @ 250μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| NTZD3156CT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-ntzd3156ct1g-datasheets-5412.pdf | SOT-563, SOT-666 | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 5 days ago) | yes | EAR99 | e3 | Tin (Sn) | 250mW | FLAT | NOT SPECIFIED | 6 | Dual | NOT SPECIFIED | 280mW | 2 | Other Transistors | Not Qualified | 6.5ns | 19.5 ns | 29 ns | 540mA | 6V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.54A | 0.55Ohm | 20V | N and P-Channel | 72pF @ 16V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 540mA 430mA | 2.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| NTZD3156CT2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-ntzd3156ct1g-datasheets-5412.pdf | SOT-563, SOT-666 | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 5 days ago) | yes | e3 | Tin (Sn) | 250mW | FLAT | NOT SPECIFIED | 6 | Dual | NOT SPECIFIED | 280mW | 2 | Other Transistors | Not Qualified | 6.5ns | 6.5 ns | 29 ns | 540mA | 6V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.54A | 0.55Ohm | 20V | N and P-Channel | 72pF @ 16V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 540mA 430mA | 2.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| APTM100A46FT1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/microsemicorporation-aptm100a46ft1g-datasheets-5431.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 357W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 357W | 2 | FET General Purpose Power | Not Qualified | 19A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Half Bridge) | 6800pF @ 25V | 552m Ω @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||
| NTZD3156CT5G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntzd3156ct1g-datasheets-5412.pdf | SOT-563, SOT-666 | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 5 days ago) | yes | e3 | Tin (Sn) | 250mW | FLAT | NOT SPECIFIED | 6 | Dual | NOT SPECIFIED | 280mW | 2 | Other Transistors | Not Qualified | 6.5ns | 6.5 ns | 29 ns | 540mA | 6V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.54A | 0.55Ohm | 20V | N and P-Channel | 72pF @ 16V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 540mA 430mA | 2.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SI7905DN-T1-GE3 | Vishay Siliconix | $5.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7905dnt1ge3-datasheets-5421.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 15 Weeks | Unknown | 60mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.5W | C BEND | 260 | SI7905 | 8 | 2 | Dual | 40 | 2.5W | 2 | Other Transistors | R-XDSO-C6 | 6 ns | 13ns | 10 ns | 26 ns | -6A | 20V | SILICON | DRAIN | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | -1V | 20.8W | 5A | -40V | 2 P-Channel (Dual) | 880pF @ 20V | 60m Ω @ 5A, 10V | 3V @ 250μA | 6A | 30nC @ 10V | Standard | |||||||||||||||||||||||
| SI7948DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7948dpt1ge3-datasheets-5429.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | 8 | 1.4W | SI7948 | 2 | Dual | 1.4W | 2 | PowerPAK® SO-8 Dual | 7 ns | 8ns | 8 ns | 15 ns | 4.6A | 20V | 60V | 1.4W | 75mOhm | 60V | 2 N-Channel (Dual) | 75mOhm @ 4.6A, 10V | 3V @ 250μA | 3A | 20nC @ 10V | Logic Level Gate | 75 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| SI7940DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7940dpt1ge3-datasheets-5439.pdf | PowerPAK® SO-8 Dual | 6 | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.4W | C BEND | 260 | SI7940 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 30 ns | 50ns | 50 ns | 60 ns | 11.8A | 8V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 7.6A | 0.017Ohm | 12V | 2 N-Channel (Dual) | 17m Ω @ 11.8A, 4.5V | 1.5V @ 250μA | 7.6A | 17nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI7224DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7224dnt1ge3-datasheets-5443.pdf | PowerPAK® 1212-8 Dual | 3.3mm | 1.04mm | 3.3mm | 6 | 15 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 23W | C BEND | 260 | SI7224 | 8 | 2 | Dual | 30 | 2 | FET General Purpose Power | S-XDSO-C6 | 20 ns | 10ns | 10 ns | 15 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 17.8W 23W | 6A | 0.035Ohm | 30V | 2 N-Channel (Dual) | 570pF @ 15V | 35m Ω @ 6.5A, 10V | 2.2V @ 250μA | 14.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||
| FDS4895C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/onsemiconductor-fds4895c-datasheets-5387.pdf | 8-SOIC (0.154, 3.90mm Width) | 900mW | 2W | 15ns | 18 ns | 45 ns | 4.4A | 20V | 40V | N and P-Channel | 410pF @ 20V | 39m Ω @ 5.5A, 10V | 5V @ 250μA | 5.5A 4.4A | 10nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMA1027PT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | /files/onsemiconductor-fdma1027pt-datasheets-5379.pdf | 6-VDFN Exposed Pad | No SVHC | 6 | No | 700mW | Dual | 1.4W | 2 | 6-MicroFET (2x2) | 435pF | 9 ns | 11ns | 11 ns | 15 ns | 3A | 8V | 20V | -700mV | 700mW | 120mOhm | 20V | 2 P-Channel (Dual) | 435pF @ 10V | 120mOhm @ 3A, 4.5V | 1.3V @ 250μA | 3A | 6nC @ 4.5V | Logic Level Gate | 120 mΩ |
