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ContactFDS6982S
FDS6982S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDS6982S
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 6184
- Description: FDS6982S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 230.4mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2000 |
| Series | PowerTrench®, SyncFET™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 900mW |
| Number of Elements | 2 |
| Power Dissipation | 2W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 28m Ω @ 6.3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2040pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 6.3A 8.6A |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
| Rise Time | 10ns |
| Fall Time (Typ) | 14 ns |
| Turn-Off Delay Time | 34 ns |
| Continuous Drain Current (ID) | 8.6A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| FET Feature | Logic Level Gate |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
FDS6982S Description
The FDS6982S is designed to replace two single SO-8 MOSFET and Schottky diodes in synchronous DC:DC power supplies to provide a variety of external voltages for laptops and other battery-powered electronic devices. The FDS6982S contains two unique 30V.N channel logic levels. PowerTran MOSFET is designed to maximize power conversion efficiency.
The design focus of the high-end switch (Q1) is to reduce the switching loss, while the low-end switch (Q2) is optimized to reduce the induction loss. 02 also includes an integrated Schottky diode using Fair child monolithic SyncFET technology.
FDS6982S Features
Q2: Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
8.6A,30V Rps(an)=0.016Ω @VGs=10V
Rps(on)=0.022Ω @VGs=4.5V
Q1: Optimized for low switching losses
Low Gate Charge(8.5nC typical)
6.3A,30VRs(an)=0.028Ω @VGS=10V
Rpsan)=0.035Ω @VGs=4.5V
FDS6982S Applications
the low-end switch (Q2
