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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| CSD75204W15 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd75204w15-datasheets-5838.pdf | 9-UFBGA, DSBGA | Contains Lead | 9 | No SVHC | 9 | no | No | 700mW | BOTTOM | BALL | CSD75204 | 9 | Dual | 700mW | 2 | Other Transistors | 7.8 ns | 6.7ns | 26 ns | 45 ns | -3A | -6V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -700mV | 3A | 80mOhm | 55 pF | -20V | 2 P-Channel (Dual) | 410pF @ 10V | -700 mV | 900mV @ 250μA | 3A | 3.9nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| NTLUD3191PZTBG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntlud3191pztbg-datasheets-5881.pdf | 6-UFDFN Exposed Pad | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 19 hours ago) | yes | EAR99 | unknown | e3 | Tin (Sn) | 500mW | NO LEAD | NOT SPECIFIED | 6 | Dual | NOT SPECIFIED | 500mW | 2 | Not Qualified | 24ns | 62 ns | 68 ns | -1A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1.1A | 0.25Ohm | -20V | 2 P-Channel (Dual) | 160pF @ 10V | 250m Ω @ 1.5A, 4.5V | 1V @ 250μA | 1.1A | 3.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| CSD75205W1015 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd75205w1015-datasheets-5883.pdf | 6-UFBGA, DSBGA | Contains Lead | 6 | No SVHC | 6 | no | EAR99 | 750mW | BOTTOM | BALL | NOT SPECIFIED | CSD75205 | 6 | Dual | NOT SPECIFIED | 750mW | 2 | Other Transistors | Not Qualified | 6.3 ns | 5.3ns | 17 ns | 32 ns | 1.2A | -6V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -650mV | 0.18Ohm | 33 pF | -20V | 2 P-Channel (Dual) | 265pF @ 10V | 120m Ω @ 1A, 4.5V | 850mV @ 250μA | 2.2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| FW231A-TL-E | SANYO Semiconductor (U.S.A) Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | /files/sanyosemiconductorusacorporation-fw231atle-datasheets-5913.pdf | 8-SOIC (0.173, 4.40mm Width) | 20V | 2.3W | 2 N-Channel (Dual) | 1530pF @ 10V | 23m Ω @ 8A, 4.5V | 8A | 21nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTLTD7900ZR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntltd7900zr2g-datasheets-5815.pdf | 20V | 9A | 8-VDFN Exposed Pad | Lead Free | 8 | 8 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | ESD PROTECTED | e3 | Tin (Sn) | 1.5W | NO LEAD | 260 | NTLTD7900Z | 8 | 40 | 1.5W | 2 | FET General Purpose Power | Not Qualified | 1.17ns | 1.17 ns | 1.87 ns | 6A | 12V | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 6A | 30A | 0.026Ohm | 20V | 2 N-Channel (Dual) | 15pF @ 16V | 26m Ω @ 6.5A, 4.5V | 1V @ 250μA | 18nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| ECH8651R-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2012 | /files/onsemiconductor-ech8651rtlh-datasheets-5811.pdf | 8-SMD, Flat Lead | 2.9mm | 900μm | 2.3mm | Lead Free | 8 Weeks | 8 | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | 1.4W | ECH8651R | 8 | Dual | 1.4W | 2 | 300 ns | 1μs | 2.5 μs | 4 μs | 10A | 12V | 24V | 1.5W | 24V | 2 N-Channel (Dual) | 14m Ω @ 5A, 4.5V | 24nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| GWM160-0055X1-SLSAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | RoHS Compliant | 2011 | /files/ixys-gwm1600055x1sl-datasheets-5784.pdf | 17-SMD, Flat Leads | GWM160 | 150A | 55V | 6 N-Channel (3-Phase Bridge) | 3.3m Ω @ 100A, 10V | 4.5V @ 1mA | 105nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHD2102PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nthd2102pt1-datasheets-0318.pdf | -8V | -3.4A | 8-SMD, Flat Lead | Lead Free | 8 | 8 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | unknown | e3 | Tin (Sn) | 1.1W | C BEND | 260 | NTHD2102P | 8 | 40 | 1.1W | 2 | Other Transistors | Not Qualified | 20ns | 20 ns | 20 ns | 4.6A | 8V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -8V | 2 P-Channel (Dual) | 715pF @ 6.4V | 58m Ω @ 3.4A, 4.5V | 1.5V @ 250μA | 3.4A | 16nC @ 2.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| NTLGD3502NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-ntlgd3502nt2g-datasheets-4872.pdf | 6-VDFN Exposed Pad | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | 8541.29.00.95 | e3 | Tin (Sn) | YES | 1.74W | NO LEAD | 260 | NTLGD3502N | 6 | Dual | 40 | 1.74W | 2 | Not Qualified | 17.5ns | 17.5 ns | 8.6 ns | 3.6A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 4.3A | 17.2A | 20V | 2 N-Channel (Dual) | 480pF @ 10V | 60m Ω @ 4.3A, 4.5V | 2V @ 250μA | 4.3A 3.6A | 4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| BSD223P L6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/infineontechnologies-bsd223p-datasheets-0141.pdf | 6-VSSOP, SC-88, SOT-363 | 6 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | 8541.21.00.95 | e3 | MATTE TIN | YES | GULL WING | 260 | BSD223 | 6 | 40 | 2 | Other Transistors | Not Qualified | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 0.25W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 250mW | 0.39A | 22 pF | 2 P-Channel (Dual) | 56pF @ 15V | 1.2 Ω @ 390mA, 4.5V | 1.2V @ 1.5μA | 390mA | 0.62nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| GWM120-0075X1-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/ixys-gwm1200075x1smd-datasheets-5782.pdf | 17-SMD, Gull Wing | 17 | 17 | EAR99 | No | DUAL | GWM120 | 17 | 4 | FET General Purpose Power | 110A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 75V | 75V | METAL-OXIDE SEMICONDUCTOR | 6 N-Channel (3-Phase Bridge) | 4.9m Ω @ 60A, 10V | 4V @ 1mA | 115nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GWM160-0055X1-SL | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/ixys-gwm1600055x1sl-datasheets-5784.pdf | 17-SMD, Flat Leads | 17 | 17 | EAR99 | DUAL | NOT SPECIFIED | GWM160 | NOT SPECIFIED | 6 | FET General Purpose Power | Not Qualified | 550 ns | 150A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 55V | METAL-OXIDE SEMICONDUCTOR | 0.0033Ohm | 55V | 6 N-Channel (3-Phase Bridge) | 3.3m Ω @ 100A, 10V | 4.5V @ 1mA | 105nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GWM220-004P3-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/ixys-gwm220004p3smd-datasheets-5786.pdf | 17-SMD, Gull Wing | 17 | 17 | EAR99 | DUAL | GWM220 | 17 | 6 | Not Qualified | 140 ns | 180A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 2.6mOhm | 40V | 6 N-Channel (3-Phase Bridge) | 4V @ 1mA | 94nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GWM220-004P3-SMD SAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 2008 | /files/ixys-gwm220004p3smd-datasheets-5786.pdf | 17-SMD, Gull Wing | GWM220 | 40V | 6 N-Channel (3-Phase Bridge) | 4V @ 1mA | 180A | 94nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GWM120-0075X1-SMDSAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | RoHS Compliant | 2011 | /files/ixys-gwm1200075x1smd-datasheets-5782.pdf | 17-SMD, Gull Wing | GWM120 | 110A | 75V | 6 N-Channel (3-Phase Bridge) | 4.9m Ω @ 60A, 10V | 4V @ 1mA | 115nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GWM120-0075P3-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/ixys-gwm1200075p3-datasheets-4144.pdf | 17-SMD, Gull Wing | 17 | EAR99 | DUAL | GWM120 | 6 | Not Qualified | R-PDSO-G17 | 510 ns | 118A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 75V | METAL-OXIDE SEMICONDUCTOR | 0.0055Ohm | 75V | 6 N-Channel (3-Phase Bridge) | 5.5m Ω @ 60A, 10V | 4V @ 1mA | 100nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8213-H(TE12LQ,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2006 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | unknown | 60V | 450mW | 2 N-Channel (Dual) | 625pF @ 10V | 50m Ω @ 2.5A, 10V | 2.3V @ 1mA | 5A | 11nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ECH8619-TL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2007 | /files/onsemiconductor-ech8619tle-datasheets-5797.pdf | 8-SMD, Flat Lead | 93mOhm | 8 | 1.5W | ECH8619 | 1.5W | 2 | 8-ECH | 560pF | 2A | 20V | 60V | 1.5W | 93mOhm | N and P-Channel | 560pF @ 20V | 93mOhm @ 1.5A, 10V | 3A 2A | 12.8nC @ 10V | Logic Level Gate | 93 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDC7002N_SB9G007 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/onsemiconductor-ndc7002n-datasheets-3811.pdf | SOT-23-6 Thin, TSOT-23-6 | SuperSOT™-6 | 50V | 700mW | 2 N-Channel (Dual) | 20pF @ 25V | 2Ohm @ 510mA, 10V | 2.5V @ 250μA | 510mA | 1nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GWM160-0055X1-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/ixys-gwm1600055x1smd-datasheets-0072.pdf | 17-SMD, Gull Wing | Lead Free | 17 | 2.7MOhm | 17 | EAR99 | DUAL | NOT SPECIFIED | GWM160 | 17 | NOT SPECIFIED | 6 | FET General Purpose Power | Not Qualified | 550 ns | 150A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 55V | METAL-OXIDE SEMICONDUCTOR | 55V | 6 N-Channel (3-Phase Bridge) | 3.3m Ω @ 100A, 10V | 4.5V @ 1mA | 105nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHKD13N03LT,518 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | RoHS Compliant | 2011 | /files/nexperiausainc-phkd13n03lt518-datasheets-5804.pdf | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | 8 | 3.57W | 8 | 6 ns | 7ns | 11 ns | 23 ns | 10.4A | 20V | 30V | 3.57W | 2 N-Channel (Dual) | 752pF @ 15V | 20m Ω @ 8A, 10V | 2V @ 250μA | 10.7nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7501DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7501dnt1e3-datasheets-4745.pdf | PowerPAK® 1212-8 Dual | 5 | No SVHC | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.6W | C BEND | 260 | SI7501 | 8 | Dual | 30 | 3.1W | 2 | Other Transistors | S-XDSO-C5 | 10 ns | 20ns | 20 ns | 25 ns | 5.4A | 25V | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3V | 0.035Ohm | 30V | N and P-Channel, Common Drain | 35m Ω @ 7.7A, 10V | 3V @ 250μA | 5.4A 4.5A | 14nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SI9936DY | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/onsemiconductor-si9936dy-datasheets-5767.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 230.4mg | 50MOhm | 8 | 900mW | Dual | 2W | 2 | 10ns | 10 ns | 25 ns | 5A | 20V | 30V | 30V | 2 N-Channel (Dual) | 525pF @ 15V | 50m Ω @ 5A, 10V | 1V @ 250μA | 35nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHD4401PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/onsemiconductor-nthd4401pt1-datasheets-0361.pdf | -20V | -2.1A | 8-SMD, Flat Lead | Lead Free | 8 | 8 | LAST SHIPMENTS (Last Updated: 8 hours ago) | yes | EAR99 | e3 | Tin (Sn) | 1.1W | C BEND | 260 | NTHD4401P | 8 | 40 | 1.1W | 2 | Other Transistors | Not Qualified | 13ns | 13 ns | 33 ns | 2.1A | 12V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.155Ohm | 50 pF | -20V | 2 P-Channel (Dual) | 300pF @ 10V | 155m Ω @ 2.1A, 4.5V | 1.2V @ 250μA | 6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| DMN2040LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-dmn2040lsd13-datasheets-5731.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.9mm | 8 | 850.995985mg | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | DMN2040LSD | 8 | 2 | 40 | 2 | FET General Purpose Power | 7A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 7A | 30A | 20V | 2 N-Channel (Dual) | 562pF @ 10V | 26m Ω @ 6A, 4.5V | 1.2V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| GWM220-004P3-SL SAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 2008 | /files/ixys-gwm220004p3smd-datasheets-5786.pdf | 17-SMD, Flat Leads | GWM220 | 40V | 6 N-Channel (3-Phase Bridge) | 4V @ 1mA | 180A | 94nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BTS7904SAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bts7904saksa1-datasheets-5769.pdf | TO-220-5 | 5 | EAR99 | unknown | NO | SINGLE | THROUGH-HOLE | 2 | R-PSFM-T5 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 55V 30V | 55V | METAL-OXIDE SEMICONDUCTOR | 69W 96W | 40A | 160A | 0.0205Ohm | 200 mJ | N and P-Channel | 6100pF @ 25V | 12m Ω @ 20A, 10V | 2.2V @ 40μA | 40A | 123nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD8424H_F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | TO-252-5, DPak (4 Leads + Tab), TO-252AD | compliant | NOT SPECIFIED | FDD8424 | NOT SPECIFIED | 40V | 1.3W | N and P-Channel | 1000pF @ 20V | 24m Ω @ 9A, 10V | 3V @ 250μA | 9A 6.5A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTLJD3183CZTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-ntljd3183cztag-datasheets-5693.pdf | 6-WDFN Exposed Pad | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | 710mW | NO LEAD | NOT SPECIFIED | 6 | Dual | NOT SPECIFIED | 1.5W | 2 | Not Qualified | 9ns | 12.5 ns | 14 ns | 2.2A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | -20V | N and P-Channel | 355pF @ 10V | 68m Ω @ 2A, 4.5V | 1V @ 250μA | 2.6A 2.2A | 7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| BTS7904BATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | 2008 | /files/infineontechnologies-bts7904batma1-datasheets-5699.pdf | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | 5 | EAR99 | YES | SINGLE | GULL WING | 2 | R-PSSO-G5 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | N-CHANNEL AND P-CHANNEL | 55V 30V | 55V | METAL-OXIDE SEMICONDUCTOR | 69W 96W | 40A | 160A | 0.0202Ohm | 200 mJ | N and P-Channel | 6100pF @ 25V | 11.7m Ω @ 20A, 10V | 2.2V @ 40μA | 40A | 121nC @ 10V | Logic Level Gate |
