Products
Manufacturer
RFQ
NEWS
ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTMD6601NR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-ntmd6601nr2g-datasheets-6091.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | OBSOLETE (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | 600mW | GULL WING | NOT SPECIFIED | 8 | Dual | NOT SPECIFIED | 1W | 2 | FET General Purpose Power | Not Qualified | 1.1A | 15V | SILICON | SWITCHING | 80V | METAL-OXIDE SEMICONDUCTOR | 30 pF | 80V | 2 N-Channel (Dual) | 400pF @ 25V | 215m Ω @ 2.2A, 10V | 3V @ 250μA | 15nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| SP8M8FU6TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/rohmsemiconductor-sp8m8tb-datasheets-0488.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 47MOhm | 8 | EAR99 | No | 2W | *M8 | 2W | Other Transistors | 25ns | 25 ns | 60 ns | 4.5A | 20V | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 6A | 30V | N and P-Channel | 520pF @ 10V | 30m Ω @ 6A, 10V | 2.5V @ 1mA | 6A 4.5A | 10.1nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSL215CL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/infineontechnologies-bsl215cl6327htsa1-datasheets-5983.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 6 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | 8541.21.00.95 | 500mW | DUAL | GULL WING | BSL215 | 6 | 2 | 1.5A | 12V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.14Ohm | 9 pF | N and P-Channel | 143pF @ 10V | 140m Ω @ 1.5A, 4.5V | 1.2V @ 3.7μA | 0.73nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| SP8M10FU6TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-sp8m10fu6tb-datasheets-6103.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | unknown | 2W | *M10 | 2W | Other Transistors | 25ns | 25 ns | 60 ns | 4.5A | 20V | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 7A | 30V | N and P-Channel | 600pF @ 10V | 24m Ω @ 7A, 10V | 2.5V @ 1mA | 7A 4.5A | 11.8nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N7002BFU(T5L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 6-TSSOP, SC-88, SOT-363 | 300mW | SSM6N7002 | 200mA | 60V | 300mW | 2 N-Channel (Dual) | 17pF @ 25V | 2.1 Ω @ 500mA, 10V | 3.1V @ 250μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSL306NL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsl306nl6327htsa1-datasheets-6032.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 6 | yes | EAR99 | AVALANCHE RATED | No | 500mW | GULL WING | BSL306 | 6 | 2 | 4.4 ns | 2.3ns | 1.4 ns | 8.3 ns | 2.3A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 0.057Ohm | 17 pF | 2 N-Channel (Dual) | 275pF @ 15V | 57m Ω @ 2.3A, 10V | 2V @ 11μA | 1.6nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| BSD235C L6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-bsd235ch6327xtsa1-datasheets-3204.pdf | 6-VSSOP, SC-88, SOT-363 | 6 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | 8541.21.00.95 | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | BSD235 | 6 | 40 | 2 | Other Transistors | Not Qualified | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 0.5W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 500mW | 0.95A | 0.35Ohm | N and P-Channel | 47pF @ 10V | 350m Ω @ 950mA, 4.5V | 1.2V @ 1.6μA | 950mA 530mA | 0.34nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SSM6N7002BFE(T5L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 150mW | SSM6N7002 | ES6 (1.6x1.6) | 17pF | 200mA | 60V | 150mW | 2 N-Channel (Dual) | 17pF @ 25V | 2.1Ohm @ 500mA, 10V | 3.1V @ 250μA | 200mA | Logic Level Gate | 2.1 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GWM120-0075X1-SLSAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | RoHS Compliant | 2011 | /files/ixys-gwm1200075x1smd-datasheets-5782.pdf | 17-SMD, Flat Leads | GWM120 | 110A | 75V | 6 N-Channel (3-Phase Bridge) | 4.9m Ω @ 60A, 10V | 4V @ 1mA | 115nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N37CTD(TPL3) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 6-SMD, Flat Leads | 140mW | SSM6N37 | 2 | Dual | 18 ns | 36 ns | 250mA | 1V | 20V | 20V | 2 N-Channel (Dual) | 12pF @ 10V | 2.2 Ω @ 100mA, 4.5V | 1V @ 1mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7316QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-irf7316qtrpbf-datasheets-5252.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | No | 2W | IRF7316QPBF | 2W | Other Transistors | 13 ns | 13ns | 32 ns | 34 ns | -4.9A | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 2 P-Channel (Dual) | 710pF @ 25V | 58m Ω @ 4.9A, 10V | 1V @ 250μA | 4.9A | 34nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSL214NL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/infineontechnologies-bsl214nl6327htsa1-datasheets-5963.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 6 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMAIBLE | No | 8541.21.00.95 | 500mW | GULL WING | BSL214 | 6 | 2 | 4.1 ns | 7.6ns | 1.4 ns | 6.8 ns | 1.5A | 12V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.14Ohm | 9 pF | 2 N-Channel (Dual) | 143pF @ 10V | 140m Ω @ 1.5A, 4.5V | 1.2V @ 3.7μA | 0.8nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| BSD235N L6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-bsd235nl6327-datasheets-5970.pdf | 6-VSSOP, SC-88, SOT-363 | 6 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | 8541.21.00.95 | e3 | MATTE TIN | YES | GULL WING | 260 | BSD235 | 6 | 40 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 0.5W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 500mW | 0.95A | 0.35Ohm | 2 N-Channel (Dual) | 63pF @ 10V | 350m Ω @ 950mA, 4.5V | 1.2V @ 1.6μA | 950mA | 0.32nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| NTLUD3191PZTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntlud3191pztbg-datasheets-5881.pdf | 6-UFDFN Exposed Pad | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | unknown | e3 | Tin (Sn) | 500mW | NO LEAD | NOT SPECIFIED | 6 | Dual | NOT SPECIFIED | 500mW | 2 | Not Qualified | 24ns | 62 ns | 68 ns | -1A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1.1A | 0.25Ohm | -20V | 2 P-Channel (Dual) | 160pF @ 10V | 250m Ω @ 1.5A, 4.5V | 1V @ 250μA | 1.1A | 3.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| BSL316CL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-bsl316cl6327htsa1-datasheets-5992.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 6 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | 8541.21.00.95 | 500mW | DUAL | GULL WING | NOT SPECIFIED | BSL316 | 6 | NOT SPECIFIED | 2 | Not Qualified | 1.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.4A | 7 pF | N and P-Channel | 94pF @ 15V | 160m Ω @ 1.4A, 10V | 2V @ 3.7μA | 1.4A 1.5A | 0.6nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| BSL215PL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/infineontechnologies-bsl215pl6327htsa1-datasheets-6007.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | yes | EAR99 | AVALANCHE RATED | YES | GULL WING | NOT SPECIFIED | BSL215 | 6 | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 500mW | 1.5A | 0.15Ohm | 128 pF | 2 P-Channel (Dual) | 346pF @ 15V | 150m Ω @ 1.5A, 4.5V | 1.2V @ 11μA | 1.5A | 3.55nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| SP8K1FU6TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-sp8k1tb-datasheets-0423.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 40 Weeks | 8 | EAR99 | No | 2W | *K1 | 2W | FET General Purpose Power | 6 ns | 8ns | 5 ns | 22 ns | 5A | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 5A | 30V | 2 N-Channel (Dual) | 230pF @ 10V | 51m Ω @ 5A, 10V | 2.5V @ 1mA | 5.5nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO330N02KGFUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-bso330n02kgfuma1-datasheets-6024.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 1.4W | GULL WING | NOT SPECIFIED | BSO330N02 | 8 | NOT SPECIFIED | 2.5W | 2 | Not Qualified | 7.4 ns | 16.8ns | 2.8 ns | 13.4 ns | 5.4A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.03Ohm | 19 mJ | 2 N-Channel (Dual) | 730pF @ 10V | 30m Ω @ 6.5A, 4.5V | 1.2V @ 20μA | 4.9nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| BSL205NL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-bsl205nl6327htsa1-datasheets-5976.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 6 | yes | EAR99 | AVALANCHE RATED | No | 500mW | GULL WING | BSL205 | 6 | 500mW | 2 | 5.8 ns | 2.9ns | 2.4 ns | 11 ns | 2.5A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 0.05Ohm | 2 N-Channel (Dual) | 419pF @ 10V | 50m Ω @ 2.5A, 4.5V | 1.2V @ 11μA | 3.2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N42FE(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshiba-ssm6n42fete85lf-datasheets-0134.pdf | SOT-563, SOT-666 | 6 | No | 150mW | SSM6N42 | 800mA | 10V | 20V | 2 N-Channel (Dual) | 90pF @ 10V | 240m Ω @ 500mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSL315PL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/infineontechnologies-bsl315pl6327htsa1-datasheets-6000.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | yes | EAR99 | AVALANCHE RATED | YES | GULL WING | NOT SPECIFIED | BSL315 | 6 | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 500mW | 1.5A | 0.15Ohm | 84 pF | 2 P-Channel (Dual) | 282pF @ 15V | 150m Ω @ 1.5A, 10V | 2V @ 11μA | 1.5A | 2.3nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9MJT-55PRF,518 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 20-SOIC (0.295, 7.50mm Width) | 20-SO | 55V | 2 N-Channel (Dual) | 13.8mOhm @ 10A, 10V | Logic Level Gate | 13.8 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHD2102PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nthd2102pt1-datasheets-0318.pdf | -8V | -3.4A | 8-SMD, Flat Lead | Lead Free | 8 | 8 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | unknown | e3 | Tin (Sn) | 1.1W | C BEND | 260 | NTHD2102P | 8 | 40 | 1.1W | 2 | Other Transistors | Not Qualified | 20ns | 20 ns | 20 ns | 4.6A | 8V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -8V | 2 P-Channel (Dual) | 715pF @ 6.4V | 58m Ω @ 3.4A, 4.5V | 1.5V @ 250μA | 3.4A | 16nC @ 2.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| NTLGD3502NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-ntlgd3502nt2g-datasheets-4872.pdf | 6-VDFN Exposed Pad | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | 8541.29.00.95 | e3 | Tin (Sn) | YES | 1.74W | NO LEAD | 260 | NTLGD3502N | 6 | Dual | 40 | 1.74W | 2 | Not Qualified | 17.5ns | 17.5 ns | 8.6 ns | 3.6A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 4.3A | 17.2A | 20V | 2 N-Channel (Dual) | 480pF @ 10V | 60m Ω @ 4.3A, 4.5V | 2V @ 250μA | 4.3A 3.6A | 4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SI7540DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7540dpt1e3-datasheets-4748.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 506.605978mg | No SVHC | 32mOhm | 8 | No | 1.4W | SI7540 | 2 | Single | 1.4W | 1 | PowerPAK® SO-8 Dual | 35 ns | 42ns | 42 ns | 54 ns | 7.6A | 8V | 12V | 600mV | 1.4W | 26mOhm | N and P-Channel | 17mOhm @ 11.8A, 4.5V | 1.5V @ 250μA | 7.6A 5.7A | 17nC @ 4.5V | Logic Level Gate | 17 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| GWM100-01X1-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/ixys-gwm10001x1sl-datasheets-5730.pdf | 17-SMD, Gull Wing | Lead Free | 17 | 8.5MOhm | EAR99 | DUAL | NOT SPECIFIED | GWM100 | 17 | NOT SPECIFIED | 6 | FET General Purpose Power | Not Qualified | R-PDSO-G17 | 290 ns | 90A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 100V | 6 N-Channel (3-Phase Bridge) | 8.5m Ω @ 80A, 10V | 4.5V @ 250μA | 90nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7351PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf7351trpbf-datasheets-6966.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 15 Weeks | No SVHC | 8 | No | 2W | IRF7351PBF | Dual | 2W | 2 | 8-SO | 1.33nF | 5.1 ns | 5.9ns | 6.7 ns | 17 ns | 8A | 20V | 60V | 4V | 2W | 30 ns | 17.8mOhm | 60V | 2 N-Channel (Dual) | 1330pF @ 30V | 4 V | 17.8mOhm @ 8A, 10V | 4V @ 50μA | 8A | 36nC @ 10V | Logic Level Gate | 17.8 mΩ | ||||||||||||||||||||||||||||||||||||||||
| BSC072N03LDGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bsc072n03ldgatma1-datasheets-5852.pdf | 8-PowerVDFN | 6 | 16 Weeks | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | YES | FLAT | NOT SPECIFIED | BSC072N03 | 8 | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 57W | 11.5A | 80A | 0.0094Ohm | 90 mJ | 2 N-Channel (Dual) | 3500pF @ 15V | 7.2m Ω @ 20A, 10V | 2.2V @ 250μA | 11.5A | 41nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| GWM220-004P3-SL | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/ixys-gwm220004p3smd-datasheets-5786.pdf | 17-SMD, Flat Leads | 17 | EAR99 | DUAL | GWM220 | 6 | Not Qualified | R-PDSO-F17 | 140 ns | 180A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 2.6mOhm | 40V | 6 N-Channel (3-Phase Bridge) | 4V @ 1mA | 94nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GWM120-0075X1-SL | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/ixys-gwm1200075x1smd-datasheets-5782.pdf | 17-SMD, Flat Leads | 17 | EAR99 | DUAL | NOT SPECIFIED | GWM120 | NOT SPECIFIED | 6 | FET General Purpose Power | Not Qualified | R-PDSO-F17 | 110A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 75V | 75V | METAL-OXIDE SEMICONDUCTOR | 0.0049Ohm | 6 N-Channel (3-Phase Bridge) | 4.9m Ω @ 60A, 10V | 4V @ 1mA | 115nC @ 10V | Standard |
