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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| FDMS3610S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms3610s-datasheets-9654.pdf | 8-PowerTDFN | 6 | 13 Weeks | 171mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 1W | NO LEAD | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 2 | FET General Purpose Power | R-PDSO-N6 | 11 ns | 5ns | 4 ns | 39 ns | 30A | 12V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 17.5A | 0.005Ohm | 25V | 2 N-Channel (Dual) Asymmetrical | 1570pF @ 13V | 5m Ω @ 17.5A, 10V | 2V @ 250μA | 17.5A 30A | 26nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| FQS4900TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fqs4900tf-datasheets-0822.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 13 Weeks | 230.4mg | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | 2W | DUAL | GULL WING | NOT SPECIFIED | FQS4900 | NOT SPECIFIED | 2W | 2 | Other Transistors | Not Qualified | 25ns | 47 ns | 35 ns | 1.3A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 60V 300V | METAL-OXIDE SEMICONDUCTOR | 5.2A | 0.65Ohm | -300V | N and P-Channel | 550m Ω @ 650mA, 10V | 1.95V @ 20mA | 1.3A 300mA | 2.1nC @ 5V | Standard | |||||||||||||||||||||||||||||||||
| SI3948DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si3948dvt1e3-datasheets-4388.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 21 Weeks | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.15W | GULL WING | 260 | SI3948 | 6 | Dual | 30 | 1.15W | 2 | FET General Purpose Powers | 7 ns | 5 ns | 13 ns | 2.5A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 0.105Ohm | 30V | 2 N-Channel (Dual) | 105m Ω @ 2.5A, 10V | 1V @ 250μA (Min) | 3.2nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SI4505DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4505dyt1e3-datasheets-9597.pdf | 8-SOIC (0.154, 3.90mm Width) | 21 Weeks | 1.2W | 8-SO | 3.8A | 8V | 30V 8V | 1.2W | 42mOhm | N and P-Channel | 18mOhm @ 7.8A, 10V | 1.8V @ 250μA | 6A 3.8A | 20nC @ 5V | Logic Level Gate | 18 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB60EP-T2_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqjb60ept1ge3-datasheets-4698.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual | 60V | 48W Tc | 2 N-Channel (Dual) | 1600pF @ 25V | 12mOhm @ 10A, 10V | 2.5V @ 250μA | 30A Tc | 30nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50NP04-77P-T4E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sud50np0477pt4e3-datasheets-9626.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | Lead Free | 2 | 6 Weeks | 37mOhm | 4 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 24W | SINGLE | GULL WING | 260 | 3 | Dual | 40 | 10.8W | 2 | Other Transistors | 14ns | 10 ns | 36 ns | 8A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 10.8W 24W | 8A | 35A | 40V | N and P-Channel, Common Drain | 640pF @ 20V | 37m Ω @ 5A, 10V | 2.5V @ 250μA | 20nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| DMN3012LDG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmn3012ldg13-datasheets-9627.pdf | 8-PowerLDFN | 22 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 2.2W Tc | 2 N-Channel (Dual) | 850pF @ 15V 1480pF @ 15V | 12m Ω @ 15A, 5V, 6m Ω @ 15A, 5V | 2.1V @ 250μA, 1.15V @ 250μA | 10A Ta 20A Tc | 6.1nC @ 4.5V, 12.6nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3012LEG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmn3012leg7-datasheets-9628.pdf | 8-PowerLDFN | 21 Weeks | not_compliant | e3 | Matte Tin (Sn) | 30V | 2.2W Tc | 2 N-Channel (Dual) | 850pF 1480pF @ 15V | 12m Ω @ 15A, 5V, 6m Ω @ 15A, 5V | 2.1V @ 250μA, 1.15V @ 250μA | 10A Ta 20A Tc | 6.1nC, 12.6nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8M14TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | 17 Weeks | 2W | 7A | 30V | N and P-Channel | 630pF @ 10V | 21m Ω @ 9A, 10V | 2.5V @ 1mA | 9A 7A | 8.5nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N04S4L08AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-ipg20n04s4l08aatma1-datasheets-9577.pdf | 8-PowerVDFN | Contains Lead | 8 | 12 Weeks | 8 | yes | LOGIC LEVEL COMPATIBLE | not_compliant | Halogen Free | 54W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 20A | 40V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 40V | METAL-OXIDE SEMICONDUCTOR | 145 mJ | 2 N-Channel (Dual) | 3050pF @ 25V | 8.2m Ω @ 17A, 10V | 2.2V @ 22μA | 39nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| DMHC4035LSDQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmhc4035lsdq13-datasheets-9582.pdf | 8-SOIC (0.154, 3.90mm Width) | 23 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 1.5W Ta | 2 N and 2 P-Channel (H-Bridge) | 574pF @ 20V 587pF @ 20V | 45m Ω @ 3.9A, 10V, 65m Ω @ 4.2A, 10V | 3V @ 250μA | 4.5A Ta 3.7A Ta | 5.9nC @ 4.5V, 5.4nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S4L14AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipg20n06s4l14aatma1-datasheets-9584.pdf | 8-PowerVDFN | Contains Lead | 8 | 12 Weeks | 8 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | 50W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 20A | 60V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 60V | METAL-OXIDE SEMICONDUCTOR | 0.0137Ohm | 90 mJ | 2 N-Channel (Dual) | 2890pF @ 25V | 13.7m Ω @ 17A, 10V | 2.2V @ 20μA | 39nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| DMNH6042SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmnh6042ssd13-datasheets-9590.pdf | 8-SOIC (0.154, 3.90mm Width) | 18 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 2.1W | 2 N-Channel (Dual) | 584pF @ 25V | 50m Ω @ 5.1A, 10V | 3V @ 250μA | 16.7A Tc | 4.2nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL6297SDTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irl6297sdtrpbf-datasheets-9407.pdf | DirectFET™ Isometric SA | Lead Free | 12 Weeks | No SVHC | 8 | EAR99 | 1.7W | 1.7W | 2 | FET General Purpose Power | 15A | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 800mV | 2 N-Channel (Dual) | 2245pF @ 10V | 4.9m Ω @ 15A, 4.5V | 1.1V @ 35μA | 54nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4505DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4505dyt1e3-datasheets-9597.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 21 Weeks | 8 | yes | EAR99 | e3 | MATTE TIN | 1.2W | DUAL | GULL WING | 260 | 8 | 40 | 2 | Other Transistors | Not Qualified | 3.8A | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V 8V | METAL-OXIDE SEMICONDUCTOR | 6A | 8V | N and P-Channel | 18m Ω @ 7.8A, 10V | 1.8V @ 250μA | 6A 3.8A | 20nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| IPG20N10S436AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipg20n10s436aatma1-datasheets-9603.pdf | 8-PowerVDFN | Contains Lead | 6 | 12 Weeks | 8 | yes | not_compliant | Halogen Free | 43W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | 3 ns | 1ns | 4 ns | 20A | 20V | 100V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | METAL-OXIDE SEMICONDUCTOR | 43W | 0.036Ohm | 60 mJ | 2 N-Channel (Dual) | 990pF @ 25V | 36m Ω @ 17A, 10V | 3.5V @ 16μA | 15nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||
| NVMD4N03R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntmd4n03r2g-datasheets-3741.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 26 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | YES | 2W | NOT SPECIFIED | 8 | Dual | NOT SPECIFIED | FET General Purpose Powers | 7 ns | 14ns | 10 ns | 16 ns | 4A | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 4A | 2 N-Channel (Dual) | 400pF @ 20V | 60m Ω @ 4A, 10V | 3V @ 250μA | 16nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S2L50ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-ipg20n06s2l50atma1-datasheets-9550.pdf | 8-PowerVDFN | Contains Lead | 10 Weeks | 8 | EAR99 | AEC-Q101 | Halogen Free | 51W | FLAT | NOT SPECIFIED | *PG20N06 | NOT SPECIFIED | 2 | R-PDSO-F | 2 ns | 3ns | 10 ns | 15 ns | 20A | 20V | 55V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | METAL-OXIDE SEMICONDUCTOR | 51W | 0.05Ohm | 60 mJ | 2 N-Channel (Dual) | 560pF @ 25V | 50m Ω @ 15A, 10V | 2V @ 19μA | 17nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| IPG20N06S4L14ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-ipg20n06s4l14atma2-datasheets-9557.pdf | 8-PowerVDFN | 5.15mm | 1mm | 6.15mm | 8 | 12 Weeks | 8 | yes | LOGIC LEVEL COMPATIBLE | not_compliant | Halogen Free | 50W | FLAT | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 50W | 2 | 175°C | 8 ns | 2ns | 15 ns | 40 ns | 20A | 16V | 60V | SILICON | METAL-OXIDE SEMICONDUCTOR | 0.0137Ohm | 90 mJ | 60V | 2 N-Channel (Dual) | 2890pF @ 25V | 13.7m Ω @ 17A, 10V | 2.2V @ 20μA | 39nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SH8K2TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-sh8k2tb1-datasheets-9490.pdf | 8-SMD, Gull Wing | 8 | 2W | *K2 | 2W | 6A | 30V | 30V | 2 N-Channel (Dual) | 520pF @ 10V | 30m Ω @ 6A, 10V | 2.5V @ 1mA | 10.1nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMNH6021SPDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmnh6021spdw13-datasheets-9565.pdf | 8-PowerTDFN | 18 Weeks | 60V | 1.5W Ta | 2 N-Channel (Dual) | 1143pF @ 25V | 25m Ω @ 15A, 10V | 3V @ 250μA | 8.2A Ta 32A Tc | 20.1nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8K31TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/rohmsemiconductor-sp8k31tb1-datasheets-9510.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 20 Weeks | 2W | *K31 | 8-SOP | 250pF | 3.5A | 60V | 2W | 150MOhm | 2 N-Channel (Dual) | 250pF @ 10V | 120mOhm @ 3.5A, 10V | 2.5V @ 1mA | 3.5A | 5.2nC @ 5V | Logic Level Gate | 120 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD5C466NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 48 Weeks | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N10S4L35AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipg20n10s4l35aatma1-datasheets-9516.pdf | 8-PowerVDFN | Contains Lead | 6 | 12 Weeks | 8 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | 43W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | 20A | 100V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 100V | METAL-OXIDE SEMICONDUCTOR | 0.035Ohm | 60 mJ | 2 N-Channel (Dual) | 1105pF @ 25V | 35m Ω @ 17A, 10V | 2.1V @ 16μA | 17.4nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| TPC8408,LQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 1.5W | 2 | 5.3A | 20V | 40V | 450mW | N and P-Channel | 850pF @ 10V | 32m Ω @ 3.1A, 10V | 2.3V @ 100μA | 6.1A 5.3A | 24nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH6016LPDQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerTDFN | 19 Weeks | 60V | 2.5W Ta 37.5W Tc | 2 N-Channel (Dual) | 864pF @ 30V | 19m Ω @ 10A, 10V | 2.5V @ 250μA | 9.2A Ta 33.2A Tc | 17nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S2L50AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 1997 | /files/infineontechnologies-ipg20n06s2l50aatma1-datasheets-9570.pdf | 8-PowerVDFN | Contains Lead | 10 Weeks | 8 | Halogen Free | 51W | Dual | PG-TDSON-8-10 | 560pF | 3ns | 10 ns | 15 ns | 20A | 20V | 55V | 55V | 51W | 50mOhm | 55V | 2 N-Channel (Dual) | 560pF @ 25V | 50mOhm @ 15A, 10V | 2V @ 19μA | 20A | 17nC @ 10V | Logic Level Gate | 50 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| DMHT3006LFJ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 12-PowerVDFN | 23 Weeks | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 260 | 30 | 30V | 1.3W Ta | 4 N-Channel (H-Bridge) | 1171pF @ 15V | 10m Ω @ 10A, 10V | 3V @ 250μA | 13A Ta | 17nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6932A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2010 | /files/alphaomegasemiconductor-aon6932a-datasheets-0774.pdf | 8-PowerVDFN | 16 Weeks | 8 | No | 4.3W | 2 | 36A | 20V | 30V | 3.6W 4.3W | 2 N-Channel (Half Bridge) | 1037pF @ 15V | 5m Ω @ 20A, 10V | 2.2V @ 250μA | 22A 36A | 22nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8K22TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | ROHS3 Compliant | 2009 | SOP | 8 | 2W | 2W | 550pF | 4.5A | 45V | 46mOhm | 45V | 46 mΩ |
