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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| FDPC3D5N025X9D | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-fdpc3d5n025x9d-datasheets-9906.pdf | 12-PowerWQFN | 12 Weeks | 31.4mg | ACTIVE (Last Updated: 3 weeks ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Dual | NOT SPECIFIED | 25V | 26W | 2 N-Channel (Dual) | 3340pF @ 13V | 3.01m Ω @ 18A, 10V | 3V @ 250μA | 74A | 24nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSG0813NDIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~155°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsg0813ndiatma1-datasheets-9911.pdf | 8-PowerTDFN | Contains Lead | 7 | 26 Weeks | 8 | yes | EAR99 | Tin | not_compliant | e3 | Halogen Free | 2.5W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N7 | 33A | 16V | 25V | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | SOURCE | METAL-OXIDE SEMICONDUCTOR | 2.5W | 19A | 160A | 0.004Ohm | 30 mJ | 2 N-Channel (Dual) Asymmetrical | 1100pF @ 12V | 3m Ω @ 20A, 10V | 2V @ 250μA | 19A 33A | 8.4nC @ 4.5V | Logic Level Gate, 4.5V Drive | |||||||||||||||||||||||||||||||||||||||||||
| SI7946ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/vishaysiliconix-si7946adpt1ge3-datasheets-9918.pdf | PowerPAK® SO-8 Dual | 14 Weeks | EAR99 | NOT SPECIFIED | 2 | NOT SPECIFIED | 150V | 19.8W | 2 N-Channel (Dual) | 230pF @ 75V | 186m Ω @ 3A, 10V | 3.5V @ 250μA | 7.7A Tc | 6.5nC @ 7.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5483NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5483nlwft3g-datasheets-9880.pdf | 8-PowerTDFN | Lead Free | 6 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 3.1W | 8 | Dual | 3.1W | 2 | 6.8 ns | 10.3ns | 23.5 ns | 37.5 ns | 6.4A | 20V | 60V | 2 N-Channel (Dual) | 668pF @ 25V | 36m Ω @ 15A, 10V | 2.5V @ 250μA | 23.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTLLD4951NFTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-ntlld4951nftwg-datasheets-9921.pdf | 8-PowerWDFN | 10 Weeks | EAR99 | e3 | Tin (Sn) | 810mW | FET General Purpose Powers | 6.3A | 30V | METAL-OXIDE SEMICONDUCTOR | 800mW 810mW | 13A | 2 N-Channel (Dual) Asymmetrical | 605pF @ 15V | 17.4m Ω @ 9A, 10V | 2.2V @ 250μA | 5.5A 6.3A | 12nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8M10TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-sp8m10fu6tb-datasheets-6103.pdf | 7A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | e2 | TIN COPPER | 2W | DUAL | GULL WING | 260 | *M10 | 8 | 10 | 2 | Other Transistors | Not Qualified | 25ns | 4.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 7A | 0.037Ohm | N and P-Channel | 600pF @ 10V | 25m Ω @ 7A, 10V | 2.5V @ 1mA | 7A 4.5A | 8.4nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SI4808DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4808dyt1e3-datasheets-9830.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 6 Weeks | 22mOhm | 8 | yes | EAR99 | unknown | e3 | PURE MATTE TIN | 1.1W | GULL WING | 260 | 8 | 30 | 2W | 2 | FET General Purpose Power | Not Qualified | 5.7A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 30V | METAL-OXIDE SEMICONDUCTOR | 30V | 2 N-Channel (Dual) | 22m Ω @ 7.5A, 10V | 800mV @ 250μA (Min) | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFN8458TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/infineontechnologies-auirfn8458tr-datasheets-9860.pdf | 8-PowerTDFN | 11 Weeks | 8mOhm | 8 | Tin | 34W | 2 | Dual | PQFN (5x6) | 9.7 ns | 71ns | 19 ns | 11 ns | 43A | 20V | 40V | 34W Tc | 10mOhm | 2 N-Channel (Dual) | 1060pF @ 25V | 10mOhm @ 26A, 10V | 3.9V @ 25μA | 43A Tc | 33nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS7700S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms7700s-datasheets-9936.pdf | 8-PowerWDFN | 5mm | 800μm | 6mm | Lead Free | 6 | 16 Weeks | 211mg | No SVHC | 7.5MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 1W | 2 | Dual | 1W | 2 | FET General Purpose Power | 150°C | R-PDSO-N6 | 9.2ns | 6.8 ns | 58 ns | 30A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 40A | 30V | 2 N-Channel (Dual) | 1750pF @ 15V | 1.8 V | 7.5m Ω @ 12A, 10V | 3V @ 250μA | 12A 22A | 28nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| NTMFD5C466NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | RoHS Compliant | /files/onsemiconductor-ntmfd5c466nlt1g-datasheets-9813.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 5 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3W Ta 40W Tc | 2 N-Channel (Dual) | 997pF @ 25V | 7.4m Ω @ 10A, 10V | 2.2V @ 30μA | 14A Ta 52A Tc | 16nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDWS9520L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/onsemiconductor-fdws9520lf085-datasheets-9815.pdf | 8-PowerTDFN | 22 Weeks | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 75W Tc | 2 P-Channel (Dual) | 2370pF @ 20V | 12.5m Ω @ 20A, 10V | 3V @ 250μA | 60.8A Tc | 33nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5489NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5489nlt1g-datasheets-1954.pdf | 8-PowerTDFN | Lead Free | 2 Weeks | 37.393021mg | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | 3W | 8 | 2 | Dual | FET General Purpose Power | 7 ns | 11ns | 21 ns | 31 ns | 12A | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 330pF @ 25V | 65m Ω @ 15A, 10V | 2.5V @ 250μA | 4.5A | 12.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5485NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5485nlt1g-datasheets-9824.pdf | 8-PowerTDFN | Lead Free | 4 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 2.9W | 8 | 2 | Dual | 9.5 ns | 26.6ns | 23.7 ns | 27.8 ns | 5.3A | 20V | 60V | 2 N-Channel (Dual) | 560pF @ 25V | 44m Ω @ 15A, 10V | 2.5V @ 250μA | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMD8900 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 12-PowerWDFN | 8 Weeks | 82.3188mg | 12 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | 2.1W | 260 | NOT SPECIFIED | 17A | 30V | 2 N-Channel (Dual) | 2605pF @ 15V | 4m Ω @ 19A, 10V | 2.5V @ 250μA | 19A 17A | 35nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4808DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si4808dyt1e3-datasheets-9830.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 13 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | 8 | 2 | 40 | 2W | 2 | FET General Purpose Power | 8 ns | 10ns | 10 ns | 21 ns | 5.7A | 20V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 22m Ω @ 7.5A, 10V | 800mV @ 250μA (Min) | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SI4936ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4936adyt1e3-datasheets-5150.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 14 Weeks | 506.605978mg | 8 | No | 1.1W | SI4936 | 2 | Dual | 8-SO | 6 ns | 14ns | 5 ns | 30 ns | 4.4A | 20V | 30V | 1.1W | 36mOhm | 30V | 2 N-Channel (Dual) | 36mOhm @ 5.9A, 10V | 3V @ 250μA | 4.4A | 20nC @ 10V | Logic Level Gate | 36 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S4L11ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | /files/infineontechnologies-ipg20n06s4l11atma1-datasheets-9807.pdf | 8-PowerVDFN | 12 Weeks | 60V | 65W Tc | 2 N-Channel (Dual) | 4020pF @ 25V | 11.2m Ω @ 17A, 10V | 2.2V @ 28μA | 20A Tc | 53nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C668NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 | /files/onsemiconductor-nvmfd5c668nlt1g-datasheets-5009.pdf | 48 Weeks | yes | not_compliant | e3 | Tin (Sn) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5485NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5485nlt1g-datasheets-9824.pdf | 8-PowerTDFN | Lead Free | 13 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 2.9W | 8 | 2 | Dual | 9.5 ns | 26.6ns | 23.7 ns | 27.8 ns | 5.3A | 20V | 60V | 60V | 2 N-Channel (Dual) | 560pF @ 25V | 44m Ω @ 15A, 10V | 2.5V @ 250μA | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD4901NFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntmfd4901nft1g-datasheets-1002.pdf | 8-PowerTDFN | Lead Free | 8 | 7 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1.2W | FLAT | 8 | 2 | 17.9A | 20V | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.1W 1.2W | 13.5A | 100A | 0.0035Ohm | 115 mJ | 2 N-Channel (Dual), Schottky | 1150pF @ 15V | 6.5m Ω @ 10A, 10V | 2.2V @ 250μA | 10.3A 17.9A | 9.7nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| BSG0810NDIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~155°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsg0810ndiatma1-datasheets-9839.pdf | 8-PowerTDFN | Contains Lead | 7 | 26 Weeks | 8 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | 2.5W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N7 | 39A | 16V | 25V | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | SOURCE | METAL-OXIDE SEMICONDUCTOR | 2.5W | 19A | 160A | 0.004Ohm | 30 mJ | 2 N-Channel (Dual) Asymmetrical | 1040pF @ 12V | 3m Ω @ 20A, 10V | 2V @ 250μA | 19A 39A | 8.4nC @ 4.5V | Logic Level Gate, 4.5V Drive | |||||||||||||||||||||||||||||||||||||||||||
| AOE6930 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-VDFN Exposed Pad | 18 Weeks | 30V | 24W 75W | 2 N-Channel (Dual) Asymmetrical | 1075pF @ 15V 5560pF @ 15V | 4.3m Ω @ 20A, 10V, 0.83m Ω @ 30A, 10V | 2.1V @ 250μA, 1.9V @ 250μA | 22A Tc 85A Tc | 15nC @ 4.5V, 65nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8M70TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | 8-SOIC (0.154, 3.90mm Width) | EAR99 | not_compliant | 650mW | NOT SPECIFIED | NOT SPECIFIED | Other Transistors | 2.5A | N-CHANNEL AND P-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | 3A | N and P-Channel | 180pF @ 25V | 1.63 Ω @ 1.5A, 10V | 4V @ 1mA | 3A 2.5A | 5.2nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7341GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf7341gtrpbf-datasheets-9848.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | EAR99 | ULTRA LOW RESISTANCE | 2.4W | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | 5.1A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 55V | 55V | METAL-OXIDE SEMICONDUCTOR | 2.4W | MS-012AA | 42A | 0.05Ohm | 140 mJ | 2 N-Channel (Dual) | 780pF @ 25V | 50m Ω @ 5.1A, 10V | 1V @ 250μA (Min) | 44nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S4L11AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipg20n06s4l11aatma1-datasheets-9802.pdf | 8-PowerVDFN | Contains Lead | 8 | 12 Weeks | 8 | yes | LOGIC LEVEL COMPATIBLE | not_compliant | Halogen Free | 65W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 20A | 60V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 60V | METAL-OXIDE SEMICONDUCTOR | 0.0112Ohm | 165 mJ | 2 N-Channel (Dual) | 4020pF @ 25V | 11.2m Ω @ 17A, 10V | 2.2V @ 28μA | 53nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9395MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf9395mtrpbf-datasheets-9852.pdf | DirectFET™ Isometric MC | 6 | 17 Weeks | 10 | EAR99 | No | e3 | Matte Tin (Sn) | 2.1W | BOTTOM | Dual | 2.1W | 1 | Other Transistors | R-XBCC-N6 | 19 ns | 142ns | 121 ns | 76 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 75A | 0.007Ohm | -30V | 2 P-Channel (Dual) | 3241pF @ 15V | 7m Ω @ 14A, 10V | 2.4V @ 50μA | 64nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S4L11ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-ipg20n06s4l11atma1-datasheets-9807.pdf | 8-PowerVDFN | Contains Lead | 8 | 12 Weeks | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | 65W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 11 ns | 3ns | 19 ns | 58 ns | 20A | 16V | 60V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | METAL-OXIDE SEMICONDUCTOR | 65W | 0.0112Ohm | 165 mJ | 2 N-Channel (Dual) | 4020pF @ 25V | 11.2m Ω @ 17A, 10V | 2.2V @ 28μA | 53nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| DMT10H017LPD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerTDFN | 23 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100V | 2.2W Ta 78W Tc | 2 N-Channel (Dual) | 1986pF @ 50V | 17.4m Ω @ 17A, 10V | 3V @ 250μA | 54.7A Tc | 28.6nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZF914DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerPAIR®, TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sizf914dtt1ge3-datasheets-9725.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® (6x5) | 25V | 3.4W Ta 26.6W Tc 4W Ta 60W Tc | 2 N-Channel (Dual) | 1050pF 4670pF @ 10V | 3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V | 2.4V @ 250μA, 2.2V @ 250μA | 23.5A Ta 40A Tc 52A Ta 60A Tc | 21nC, 98nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMGD7N45SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmgd7n45ssd13-datasheets-9726.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 17 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | 1.64W | GULL WING | 2 | R-PDSO-G8 | 500mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 450V | 450V | METAL-OXIDE SEMICONDUCTOR | 0.5A | 2.2A | 4Ohm | 56 mJ | 2 N-Channel (Dual) | 256pF @ 25V | 4 Ω @ 400mA, 10V | 4.5V @ 1mA | 500mA Ta | 6.9nC @ 10V | Standard |
