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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| NTLLD4951NFTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-ntlld4951nftwg-datasheets-9921.pdf | 8-PowerWDFN | 10 Weeks | EAR99 | e3 | Tin (Sn) | 810mW | FET General Purpose Powers | 6.3A | 30V | METAL-OXIDE SEMICONDUCTOR | 800mW 810mW | 13A | 2 N-Channel (Dual) Asymmetrical | 605pF @ 15V | 17.4m Ω @ 9A, 10V | 2.2V @ 250μA | 5.5A 6.3A | 12nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8M10TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-sp8m10fu6tb-datasheets-6103.pdf | 7A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | e2 | TIN COPPER | 2W | DUAL | GULL WING | 260 | *M10 | 8 | 10 | 2 | Other Transistors | Not Qualified | 25ns | 4.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 7A | 0.037Ohm | N and P-Channel | 600pF @ 10V | 25m Ω @ 7A, 10V | 2.5V @ 1mA | 7A 4.5A | 8.4nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SI4808DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4808dyt1e3-datasheets-9830.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 6 Weeks | 22mOhm | 8 | yes | EAR99 | unknown | e3 | PURE MATTE TIN | 1.1W | GULL WING | 260 | 8 | 30 | 2W | 2 | FET General Purpose Power | Not Qualified | 5.7A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 30V | METAL-OXIDE SEMICONDUCTOR | 30V | 2 N-Channel (Dual) | 22m Ω @ 7.5A, 10V | 800mV @ 250μA (Min) | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFN8458TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/infineontechnologies-auirfn8458tr-datasheets-9860.pdf | 8-PowerTDFN | 11 Weeks | 8mOhm | 8 | Tin | 34W | 2 | Dual | PQFN (5x6) | 9.7 ns | 71ns | 19 ns | 11 ns | 43A | 20V | 40V | 34W Tc | 10mOhm | 2 N-Channel (Dual) | 1060pF @ 25V | 10mOhm @ 26A, 10V | 3.9V @ 25μA | 43A Tc | 33nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS7700S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms7700s-datasheets-9936.pdf | 8-PowerWDFN | 5mm | 800μm | 6mm | Lead Free | 6 | 16 Weeks | 211mg | No SVHC | 7.5MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 1W | 2 | Dual | 1W | 2 | FET General Purpose Power | 150°C | R-PDSO-N6 | 9.2ns | 6.8 ns | 58 ns | 30A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 40A | 30V | 2 N-Channel (Dual) | 1750pF @ 15V | 1.8 V | 7.5m Ω @ 12A, 10V | 3V @ 250μA | 12A 22A | 28nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SI4618DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4618dyt1e3-datasheets-9868.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 15 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.35W | DUAL | GULL WING | 260 | SI4618 | 8 | 2 | 30 | 2 | FET General Purpose Power | 24 ns | 97ns | 45 ns | 35 ns | 7.4A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.98W 4.16W | 6.7A | 35A | 0.017Ohm | 30V | 2 N-Channel (Half Bridge) | 1535pF @ 15V | 17m Ω @ 8A, 10V | 2.5V @ 1mA | 8A 15.2A | 44nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||
| NVMFD5C470NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | RoHS Compliant | /files/onsemiconductor-nvmfd5c470nt1g-datasheets-9433.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.1W Ta 28W Tc | 2 N-Channel (Dual) | 420pF @ 25V | 11.7m Ω @ 10A, 10V | 3.5V @ 250μA | 11.7A Ta 36A Tc | 8nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS001N025DSD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/onsemiconductor-fdms001n025dsd-datasheets-9872.pdf | 8-PowerWDFN | 8 | 23 Weeks | ACTIVE (Last Updated: 3 weeks ago) | yes | not_compliant | e3 | Tin (Sn) | YES | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N8 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | METAL-OXIDE SEMICONDUCTOR | 2.1W Ta 26W Tc 2.3W Ta 42W Tc | 19A | 381A | 0.00325Ohm | 121 mJ | 2 N-Channel (Dual) Asymmetrical | 1370pF 5105pF @ 13V | 3.25m Ω @ 19A, 10V, 920μ Ω @ 38A, 10V | 2.5V @ 320μA, 3V @ 1mA | 19A Ta 69A Tc 38A Ta 165A Tc | 30nC, 104nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFN8459TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-auirfn8459tr-datasheets-9873.pdf | 8-PowerTDFN | 6 | 11 Weeks | 4.8mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | AEC-Q101 | 50W | FLAT | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 2 | R-PDSO-F6 | 10 ns | 55ns | 42 ns | 25 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 66 mJ | 2 N-Channel (Dual) | 2250pF @ 25V | 5.9m Ω @ 40A, 10V | 3.9V @ 50μA | 60nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| FDMD8900 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 12-PowerWDFN | 8 Weeks | 82.3188mg | 12 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | 2.1W | 260 | NOT SPECIFIED | 17A | 30V | 2 N-Channel (Dual) | 2605pF @ 15V | 4m Ω @ 19A, 10V | 2.5V @ 250μA | 19A 17A | 35nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4808DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si4808dyt1e3-datasheets-9830.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 13 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | 8 | 2 | 40 | 2W | 2 | FET General Purpose Power | 8 ns | 10ns | 10 ns | 21 ns | 5.7A | 20V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 22m Ω @ 7.5A, 10V | 800mV @ 250μA (Min) | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI4936ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4936adyt1e3-datasheets-5150.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 14 Weeks | 506.605978mg | 8 | No | 1.1W | SI4936 | 2 | Dual | 8-SO | 6 ns | 14ns | 5 ns | 30 ns | 4.4A | 20V | 30V | 1.1W | 36mOhm | 30V | 2 N-Channel (Dual) | 36mOhm @ 5.9A, 10V | 3V @ 250μA | 4.4A | 20nC @ 10V | Logic Level Gate | 36 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S4L11ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | /files/infineontechnologies-ipg20n06s4l11atma1-datasheets-9807.pdf | 8-PowerVDFN | 12 Weeks | 60V | 65W Tc | 2 N-Channel (Dual) | 4020pF @ 25V | 11.2m Ω @ 17A, 10V | 2.2V @ 28μA | 20A Tc | 53nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C668NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 | /files/onsemiconductor-nvmfd5c668nlt1g-datasheets-5009.pdf | 48 Weeks | yes | not_compliant | e3 | Tin (Sn) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5485NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5485nlt1g-datasheets-9824.pdf | 8-PowerTDFN | Lead Free | 13 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 2.9W | 8 | 2 | Dual | 9.5 ns | 26.6ns | 23.7 ns | 27.8 ns | 5.3A | 20V | 60V | 60V | 2 N-Channel (Dual) | 560pF @ 25V | 44m Ω @ 15A, 10V | 2.5V @ 250μA | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD4901NFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntmfd4901nft1g-datasheets-1002.pdf | 8-PowerTDFN | Lead Free | 8 | 7 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1.2W | FLAT | 8 | 2 | 17.9A | 20V | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.1W 1.2W | 13.5A | 100A | 0.0035Ohm | 115 mJ | 2 N-Channel (Dual), Schottky | 1150pF @ 15V | 6.5m Ω @ 10A, 10V | 2.2V @ 250μA | 10.3A 17.9A | 9.7nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| BSG0810NDIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~155°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsg0810ndiatma1-datasheets-9839.pdf | 8-PowerTDFN | Contains Lead | 7 | 26 Weeks | 8 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | 2.5W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N7 | 39A | 16V | 25V | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | SOURCE | METAL-OXIDE SEMICONDUCTOR | 2.5W | 19A | 160A | 0.004Ohm | 30 mJ | 2 N-Channel (Dual) Asymmetrical | 1040pF @ 12V | 3m Ω @ 20A, 10V | 2V @ 250μA | 19A 39A | 8.4nC @ 4.5V | Logic Level Gate, 4.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||
| AOE6930 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-VDFN Exposed Pad | 18 Weeks | 30V | 24W 75W | 2 N-Channel (Dual) Asymmetrical | 1075pF @ 15V 5560pF @ 15V | 4.3m Ω @ 20A, 10V, 0.83m Ω @ 30A, 10V | 2.1V @ 250μA, 1.9V @ 250μA | 22A Tc 85A Tc | 15nC @ 4.5V, 65nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8M70TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | 8-SOIC (0.154, 3.90mm Width) | EAR99 | not_compliant | 650mW | NOT SPECIFIED | NOT SPECIFIED | Other Transistors | 2.5A | N-CHANNEL AND P-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | 3A | N and P-Channel | 180pF @ 25V | 1.63 Ω @ 1.5A, 10V | 4V @ 1mA | 3A 2.5A | 5.2nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7341GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf7341gtrpbf-datasheets-9848.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | EAR99 | ULTRA LOW RESISTANCE | 2.4W | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | 5.1A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 55V | 55V | METAL-OXIDE SEMICONDUCTOR | 2.4W | MS-012AA | 42A | 0.05Ohm | 140 mJ | 2 N-Channel (Dual) | 780pF @ 25V | 50m Ω @ 5.1A, 10V | 1V @ 250μA (Min) | 44nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S4L11AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipg20n06s4l11aatma1-datasheets-9802.pdf | 8-PowerVDFN | Contains Lead | 8 | 12 Weeks | 8 | yes | LOGIC LEVEL COMPATIBLE | not_compliant | Halogen Free | 65W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 20A | 60V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 60V | METAL-OXIDE SEMICONDUCTOR | 0.0112Ohm | 165 mJ | 2 N-Channel (Dual) | 4020pF @ 25V | 11.2m Ω @ 17A, 10V | 2.2V @ 28μA | 53nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9395MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf9395mtrpbf-datasheets-9852.pdf | DirectFET™ Isometric MC | 6 | 17 Weeks | 10 | EAR99 | No | e3 | Matte Tin (Sn) | 2.1W | BOTTOM | Dual | 2.1W | 1 | Other Transistors | R-XBCC-N6 | 19 ns | 142ns | 121 ns | 76 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 75A | 0.007Ohm | -30V | 2 P-Channel (Dual) | 3241pF @ 15V | 7m Ω @ 14A, 10V | 2.4V @ 50μA | 64nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S4L11ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-ipg20n06s4l11atma1-datasheets-9807.pdf | 8-PowerVDFN | Contains Lead | 8 | 12 Weeks | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | 65W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 11 ns | 3ns | 19 ns | 58 ns | 20A | 16V | 60V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | METAL-OXIDE SEMICONDUCTOR | 65W | 0.0112Ohm | 165 mJ | 2 N-Channel (Dual) | 4020pF @ 25V | 11.2m Ω @ 17A, 10V | 2.2V @ 28μA | 53nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| NTMFD5C466NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | RoHS Compliant | /files/onsemiconductor-ntmfd5c466nlt1g-datasheets-9813.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 5 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3W Ta 40W Tc | 2 N-Channel (Dual) | 997pF @ 25V | 7.4m Ω @ 10A, 10V | 2.2V @ 30μA | 14A Ta 52A Tc | 16nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDWS9520L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/onsemiconductor-fdws9520lf085-datasheets-9815.pdf | 8-PowerTDFN | 22 Weeks | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 75W Tc | 2 P-Channel (Dual) | 2370pF @ 20V | 12.5m Ω @ 20A, 10V | 3V @ 250μA | 60.8A Tc | 33nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5489NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5489nlt1g-datasheets-1954.pdf | 8-PowerTDFN | Lead Free | 2 Weeks | 37.393021mg | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | 3W | 8 | 2 | Dual | FET General Purpose Power | 7 ns | 11ns | 21 ns | 31 ns | 12A | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 330pF @ 25V | 65m Ω @ 15A, 10V | 2.5V @ 250μA | 4.5A | 12.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5485NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5485nlt1g-datasheets-9824.pdf | 8-PowerTDFN | Lead Free | 4 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 2.9W | 8 | 2 | Dual | 9.5 ns | 26.6ns | 23.7 ns | 27.8 ns | 5.3A | 20V | 60V | 2 N-Channel (Dual) | 560pF @ 25V | 44m Ω @ 15A, 10V | 2.5V @ 250μA | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMNH6035SPDWQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmnh6035spdwq13-datasheets-9730.pdf | 8-PowerTDFN | 23 Weeks | not_compliant | e3 | Matte Tin (Sn) | 60V | 2.4W Ta 68W Tc | 2 N-Channel (Dual) | 879pF @ 25V | 35m Ω @ 15A, 10V | 3V @ 250μA | 33A Tc | 16nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7379QTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf7379qtr-datasheets-9743.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 8 Weeks | No SVHC | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | 2.5W | GULL WING | Dual | 2.5W | 2 | Other Transistors | 4.3A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1V | 46A | 0.045Ohm | 30V | N and P-Channel | 520pF @ 25V | 1 V | 45m Ω @ 5.8A, 10V | 3V @ 250μA | 5.8A 4.3A | 25nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI8902EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si8902edbt2e1-datasheets-9750.pdf | 6-MICRO FOOT®CSP | 6 | 24 Weeks | yes | EAR99 | ESD PROTECTED, ULTRA-LOW RESISTANCE | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | BOTTOM | BALL | 260 | SI8902 | 6 | 40 | 2 | FET General Purpose Power | Not Qualified | R-XBGA-B6 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 1.7W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1W | 3.9A | 0.072Ohm | 2 N-Channel (Dual) Common Drain | 1V @ 980μA | 3.9A | Logic Level Gate |
