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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| DMNH6035SPDWQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmnh6035spdwq13-datasheets-9730.pdf | 8-PowerTDFN | 23 Weeks | not_compliant | e3 | Matte Tin (Sn) | 60V | 2.4W Ta 68W Tc | 2 N-Channel (Dual) | 879pF @ 25V | 35m Ω @ 15A, 10V | 3V @ 250μA | 33A Tc | 16nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7379QTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf7379qtr-datasheets-9743.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 8 Weeks | No SVHC | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | 2.5W | GULL WING | Dual | 2.5W | 2 | Other Transistors | 4.3A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1V | 46A | 0.045Ohm | 30V | N and P-Channel | 520pF @ 25V | 1 V | 45m Ω @ 5.8A, 10V | 3V @ 250μA | 5.8A 4.3A | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SI8902EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si8902edbt2e1-datasheets-9750.pdf | 6-MICRO FOOT®CSP | 6 | 24 Weeks | yes | EAR99 | ESD PROTECTED, ULTRA-LOW RESISTANCE | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | BOTTOM | BALL | 260 | SI8902 | 6 | 40 | 2 | FET General Purpose Power | Not Qualified | R-XBGA-B6 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 1.7W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1W | 3.9A | 0.072Ohm | 2 N-Channel (Dual) Common Drain | 1V @ 980μA | 3.9A | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI4963BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4963bdyt1e3-datasheets-2990.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI4963 | 8 | Dual | 40 | 1.1W | 2 | Other Transistors | 30 ns | 40ns | 55 ns | 80 ns | 4.9A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 2 P-Channel (Dual) | 32m Ω @ 6.5A, 4.5V | 1.4V @ 250μA | 21nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SI6975DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6975dqt1ge3-datasheets-9753.pdf | 8-TSSOP (0.173, 4.40mm Width) | 21 Weeks | 27mOhm | 8 | 830mW | Dual | 830mW | 8-TSSOP | 4.3A | 8V | 12V | 830mW | 27mOhm | 12V | 2 P-Channel (Dual) | 27mOhm @ 5.1A, 4.5V | 450mV @ 5mA (Min) | 4.3A | 30nC @ 4.5V | Logic Level Gate | 27 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS3602AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms3602as-datasheets-9680.pdf | 8-PowerTDFN | 6 | 13 Weeks | 171mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 2.5W | NO LEAD | NOT SPECIFIED | 2 | NOT SPECIFIED | 2 | FET General Purpose Power | R-PDSO-N6 | 12 ns | 4.2ns | 3.2 ns | 31 ns | 26A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.2W 2.5W | 15A | 0.0056Ohm | 90 pF | 25V | 2 N-Channel (Dual) Asymmetrical | 1770pF @ 13V | 5.6m Ω @ 15A, 10V | 3V @ 250μA | 15A 26A | 27nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SH8M4TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-sh8m4tb1-datasheets-9764.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 8 | 2W | *M4 | 2W | 8-SOP | 1.19nF | 7A | 30V | 2W | 17mOhm | 30V | N and P-Channel | 1190pF @ 10V | 18mOhm @ 9A, 10V | 2.5V @ 1mA | 9A 7A | 15nC @ 5V | Logic Level Gate | 18 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG16N10S4L61AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipg16n10s4l61aatma1-datasheets-9772.pdf | 8-PowerVDFN | Contains Lead | 12 Weeks | 8 | yes | Halogen Free | 29W | NOT SPECIFIED | NOT SPECIFIED | 16A | 100V | 100V | 2 N-Channel (Dual) | 845pF @ 25V | 61m Ω @ 16A, 10V | 2.1V @ 90μA | 11nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS5C471NLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 | RoHS Compliant | /files/onsemiconductor-nttfs5c471nltag-datasheets-9706.pdf | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EFC4C002NLTDG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-efc4c002nltdg-datasheets-9793.pdf | 8-XFBGA, WLCSP | Lead Free | 12 Weeks | ACTIVE (Last Updated: 23 hours ago) | yes | 2.6W | 2 N-Channel (Dual) Common Drain | 6200pF @ 15V | 2.2V @ 1mA | 45nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S415ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-ipg20n06s415atma2-datasheets-9711.pdf | 8-PowerVDFN | 5.15mm | 1mm | 6.15mm | 8 | 12 Weeks | 8 | yes | not_compliant | Halogen Free | 50W | FLAT | NOT SPECIFIED | Dual | NOT SPECIFIED | 50W | 2 | 12 ns | 2ns | 9 ns | 17 ns | 20A | 20V | 60V | SILICON | METAL-OXIDE SEMICONDUCTOR | 0.0155Ohm | 90 mJ | 60V | 2 N-Channel (Dual) | 2260pF @ 25V | 15.5m Ω @ 17A, 10V | 4V @ 20μA | 29nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| ZXMP3A17DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmp3a17dn8ta-datasheets-9648.pdf | -30V | -4.4A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 12 Weeks | 73.992255mg | No SVHC | 70mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.1W | GULL WING | 260 | 8 | 40 | 2.1W | 2 | 1.74 ns | 2.87ns | 8.72 ns | 29.2 ns | 4.4A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 3.4A | 2 P-Channel (Dual) | 630pF @ 15V | 70m Ω @ 3.2A, 10V | 1V @ 250μA | 4.4A Ta | 8.28nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||
| BSO604NS2XUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-bso604ns2xuma1-datasheets-9719.pdf | 55V | 5A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 Weeks | 8 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | e3 | Halogen Free | 2W | GULL WING | NOT SPECIFIED | BSO604NS2 | 8 | NOT SPECIFIED | 2 | Not Qualified | 8ns | 5A | 20V | 55V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2W | 5A | 20A | 0.044Ohm | 90 mJ | 2 N-Channel (Dual) | 870pF @ 25V | 35m Ω @ 2.5A, 10V | 2V @ 30μA | 26nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| DMT10H017LPD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerTDFN | 23 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100V | 2.2W Ta 78W Tc | 2 N-Channel (Dual) | 1986pF @ 50V | 17.4m Ω @ 17A, 10V | 3V @ 250μA | 54.7A Tc | 28.6nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD4902NFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfd4902nft1g-datasheets-4144.pdf | 8-PowerTDFN | Lead Free | 8 | 7 Weeks | 8 | EAR99 | Tin | No | e3 | 1.16W | FLAT | 10 | 2 | 13.3A | 20V | SILICON | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.1W 1.16W | 13.5A | 60A | 0.01Ohm | 2 N-Channel (Dual), Schottky | 1150pF @ 15V | 6.5m Ω @ 10A, 10V | 2.2V @ 250μA | 10.3A 13.3A | 9.7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS3610S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms3610s-datasheets-9654.pdf | 8-PowerTDFN | 6 | 13 Weeks | 171mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 1W | NO LEAD | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 2 | FET General Purpose Power | R-PDSO-N6 | 11 ns | 5ns | 4 ns | 39 ns | 30A | 12V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 17.5A | 0.005Ohm | 25V | 2 N-Channel (Dual) Asymmetrical | 1570pF @ 13V | 5m Ω @ 17.5A, 10V | 2V @ 250μA | 17.5A 30A | 26nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| FQS4900TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fqs4900tf-datasheets-0822.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 13 Weeks | 230.4mg | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | 2W | DUAL | GULL WING | NOT SPECIFIED | FQS4900 | NOT SPECIFIED | 2W | 2 | Other Transistors | Not Qualified | 25ns | 47 ns | 35 ns | 1.3A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 60V 300V | METAL-OXIDE SEMICONDUCTOR | 5.2A | 0.65Ohm | -300V | N and P-Channel | 550m Ω @ 650mA, 10V | 1.95V @ 20mA | 1.3A 300mA | 2.1nC @ 5V | Standard | ||||||||||||||||||||||||||||||||||||||||
| DMN3012LEG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmn3012leg7-datasheets-9628.pdf | 8-PowerLDFN | 21 Weeks | not_compliant | e3 | Matte Tin (Sn) | 30V | 2.2W Tc | 2 N-Channel (Dual) | 850pF 1480pF @ 15V | 12m Ω @ 15A, 5V, 6m Ω @ 15A, 5V | 2.1V @ 250μA, 1.15V @ 250μA | 10A Ta 20A Tc | 6.1nC, 12.6nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6850 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/alphaomegasemiconductor-aon6850-datasheets-0826.pdf | 8-PowerSMD, Flat Leads | 18 Weeks | 8 | 1.7W | 56W | 2 | 5A | 25V | 100V | 2 N-Channel (Dual) | 1840pF @ 50V | 35m Ω @ 5A, 10V | 4V @ 250μA | 29nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO203PHXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-bso203phxuma1-datasheets-9666.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 18 Weeks | 8 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | e3 | Halogen Free | 1.6W | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | Not Qualified | 16 ns | 55ns | 74 ns | 45 ns | 7A | 12V | -20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | METAL-OXIDE SEMICONDUCTOR | 0.021Ohm | 97 mJ | 2 P-Channel (Dual) | 3750pF @ 15V | 21m Ω @ 8.2A, 4.5V | 1.2V @ 100μA | 39nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| AOE6922 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/alphaomegasemiconductorinc-aoe6922-datasheets-9694.pdf | 18 Weeks | 8-DFN (5x6) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMNH6021SPDWQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmnh6021spdwq13-datasheets-9696.pdf | 8-PowerTDFN | 17 Weeks | e3 | Matte Tin (Sn) | 60V | 1.5W Ta | 2 N-Channel (Dual) | 1143pF @ 25V | 25m Ω @ 15A, 10V | 3V @ 250μA | 8.2A Ta 32A Tc | 20.1nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5853NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5853nlt1g-datasheets-4982.pdf | 8-PowerTDFN | Lead Free | 6 | 13 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | YES | 3W | FLAT | 8 | Dual | 2 | FET General Purpose Power | R-PDSO-F6 | 12A | 20V | SILICON | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 34A | 165A | 0.015Ohm | 40 mJ | 2 N-Channel (Dual) | 1100pF @ 25V | 10m Ω @ 15A, 10V | 2.4V @ 250μA | 23nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| DMS3017SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-dms3017ssd13-datasheets-9624.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 1.19W | GULL WING | 260 | 8 | 2 | Dual | 40 | 1.79W | 2 | FET General Purpose Power | 8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.5V | 10A | 30V | 2 N-Channel (Dual) | 1276pF @ 15V | 2.5 V | 12m Ω @ 9.5A, 10V | 2.5V @ 250μA | 8A 6A | 30.6nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SIZF918DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sizf918dtt1ge3-datasheets-9699.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® (6x5) | 30V | 3.4W Ta 26.6W Tc 3.7W Ta 50W Tc | 2 N-Channel (Dual), Schottky | 1060pF 2650pF @ 15V | 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V | 2.4V @ 250μA, 2.3V @ 250μA | 23A Ta 40A Tc 35A Ta 60A Tc | 22nC, 56nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3012LDG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmn3012ldg13-datasheets-9627.pdf | 8-PowerLDFN | 22 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 2.2W Tc | 2 N-Channel (Dual) | 850pF @ 15V 1480pF @ 15V | 12m Ω @ 15A, 5V, 6m Ω @ 15A, 5V | 2.1V @ 250μA, 1.15V @ 250μA | 10A Ta 20A Tc | 6.1nC @ 4.5V, 12.6nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8407,LQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 1.5W | 2 | 8-SOP | 1.19nF | 7.4A | 20V | 30V | 450mW | N and P-Channel | 1190pF @ 10V | 17mOhm @ 4.5A, 10V | 2.3V @ 100μA | 9A 7.4A | 17nC @ 10V | Logic Level Gate | 17 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ720DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siz720dtt1ge3-datasheets-9632.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | 14 Weeks | 6 | EAR99 | No | e3 | MATTE TIN | 48W | 260 | 2 | Dual | 40 | 4.6W | 16A | 20V | 27W 48W | 2 N-Channel (Half Bridge) | 825pF @ 10V | 2 V | 8.7m Ω @ 16.8A, 10V | 2V @ 250μA | 23nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMD6P02R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 25 Weeks | 8 | EAR99 | e3 | Tin (Sn) | YES | 750mW | 150°C | Dual | Other Transistors | 4.8A | 20V | METAL-OXIDE SEMICONDUCTOR | 2 P-Channel (Dual) | 1700pF @ 16V | 33m Ω @ 6.2A, 4.5V | 1.2V @ 250μA | 35nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C462NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfd5c462nt1g-datasheets-4877.pdf | 48 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED |
