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ContactIPG20N06S415ATMA2
MOSFET 2N-CH 8TDSON
- Manufacturer: Infineon Technologies
- NO: 376-IPG20N06S415ATMA2
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 1688
- Description: MOSFET 2N-CH 8TDSON(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Max Power Dissipation | 50W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 50W |
| Turn On Delay Time | 12 ns |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 15.5m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 20μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Rise Time | 2ns |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 20A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 60V |
| Drain-source On Resistance-Max | 0.0155Ohm |
| Drain to Source Breakdown Voltage | 60V |
| Avalanche Energy Rating (Eas) | 90 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Height | 1mm |
| Length | 5.15mm |
| Width | 6.15mm |
| RoHS Status | ROHS3 Compliant |
