LN60A01ES-LF

MOSFET 3N-CH 600V 0.08A 8SOIC


  • Manufacturer: Monolithic Power Systems (MPS)
  • NO: 541-LN60A01ES-LF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 8628
  • Description: MOSFET 3N-CH 600V 0.08A 8SOIC(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

Please send RFQ , we will respond immediately.

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Purchase & Inquiry

Transport

User guide

Purchase

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Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Operating Temperature -20°C~125°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 2 (1 Year)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 1.3W
Power Dissipation 1.3W
FET Type 3 N-Channel, Common Gate
Rds On (Max) @ Id, Vgs 190 Ω @ 10mA, 10V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Drain to Source Voltage (Vdss) 600V
Continuous Drain Current (ID) 80mA
Gate to Source Voltage (Vgs) 15V
Drain to Source Breakdown Voltage 600V
FET Feature Standard
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.