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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| FDMD8580 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerWDFN | 12 Weeks | 94.85095mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 2.3W | NOT SPECIFIED | Dual | NOT SPECIFIED | 82A | 80V | 2 N-Channel (Dual) | 5875pF @ 40V | 4.6m Ω @ 16A, 10V | 4.5V @ 250μA | 16A Ta 82A Tc | 80nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD5C462NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 | /files/onsemiconductor-ntmfd5c462nlt1g-datasheets-0102.pdf | 48 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7962DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7962dpt1e3-datasheets-0110.pdf | PowerPAK® SO-8 Dual | 6 | 13 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7962 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | Not Qualified | R-PDSO-C6 | 15ns | 15 ns | 55 ns | 11.1A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 7.1A | 0.017Ohm | 40V | 2 N-Channel (Dual) | 17m Ω @ 11.1A, 10V | 4.5V @ 250μA | 7.1A | 70nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||
| FDMD8260LET60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-fdmd8260let60-datasheets-0082.pdf | 12-PowerWDFN | 12 Weeks | 82.3188mg | 12 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | 1.1W | 260 | Dual | NOT SPECIFIED | 15A | 60V | 2 N-Channel (Dual) | 5245pF @ 30V | 5.8m Ω @ 15A, 10V | 3V @ 250μA | 68nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMD8440L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | RoHS Compliant | /files/onsemiconductor-fdmd8440l-datasheets-0123.pdf | 8-PowerWDFN | 12 Weeks | 153.4014mg | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | NOT SPECIFIED | Dual | NOT SPECIFIED | 40V | 2.1W Ta 33W Tc | 2 N-Channel (Dual) | 4150pF @ 20V | 2.6m Ω @ 21A, 10V | 3V @ 250μA | 21A Ta 87A Tc | 62nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMD82100 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdmd82100-datasheets-9993.pdf | 12-PowerWDFN | 12 | 12 Weeks | 82.3188mg | 12 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 1W | NO LEAD | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 2 | FET General Purpose Power | 9.4 ns | 3.2ns | 3.3 ns | 15 ns | 7A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 7A | 0.019Ohm | 15 pF | 100V | 2 N-Channel (Dual) | 1070pF @ 50V | 19m Ω @ 7A, 10V | 4V @ 250μA | 17nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||
| HTMN5130SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-htmn5130ssd13-datasheets-9999.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 21 Weeks | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | AEC-Q101 | 1.7W | GULL WING | 2 | 3 ns | 2.5ns | 6.1 ns | 13.5 ns | 2.6A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 55V | 55V | METAL-OXIDE SEMICONDUCTOR | 8A | 0.13Ohm | 2 N-Channel (Dual) | 218.7pF @ 25V | 130m Ω @ 3A, 10V | 3V @ 250μA | 8.9nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5483NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5483nlwft3g-datasheets-9880.pdf | 8-PowerTDFN | Lead Free | 13 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 3.1W | 8 | 2 | Dual | 6.8 ns | 10.3ns | 23.5 ns | 37.5 ns | 24A | 20V | 60V | 2 N-Channel (Dual) | 668pF @ 25V | 36m Ω @ 15A, 10V | 2.5V @ 250μA | 6.4A | 23.4nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8J66TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2008 | 8-SOIC (0.154, 3.90mm Width) | *J66 | 9A | 30V | 2 P-Channel (Dual) | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMD8260L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-fdmd8260l-datasheets-0031.pdf | 12-PowerWDFN | 800μm | 12 Weeks | 82.3188mg | 12 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 1W | 260 | 2 | Dual | NOT SPECIFIED | 1W | FET General Purpose Power | 150°C | 12 ns | 47 ns | 15A | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 64A | 60V | 2 N-Channel (Dual) | 5245pF @ 30V | 5.8m Ω @ 15A, 10V | 3V @ 250μA | 68nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
| SP8M51TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohm-sp8m51tb1-datasheets-0956.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 26 Weeks | 8 | EAR99 | 2W | DUAL | GULL WING | NOT SPECIFIED | *M51 | NOT SPECIFIED | 2W | 2 | 2.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3A | 12A | 0.19Ohm | 100V | N and P-Channel | 3A 2.5A | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8900EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8900edbt2e1-datasheets-0037.pdf | 10-UFBGA, CSPBGA | 10 | 13 Weeks | 40mOhm | 10 | yes | EAR99 | unknown | e1 | TIN SILVER COPPER | 1W | BOTTOM | BALL | 260 | SI8900 | 10 | Dual | 40 | 1W | 2 | FET General Purpose Power | Not Qualified | 4.5μs | 4.5 μs | 55 μs | 7A | 12V | SILICON | METAL-OXIDE SEMICONDUCTOR | 5.4A | 24mOhm | 20V | 2 N-Channel (Dual) Common Drain | 1V @ 1.1mA | 5.4A | Logic Level Gate | 24 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| AUIRF7316QTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf7316qtr-datasheets-9942.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 8 Weeks | No SVHC | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | 2W | GULL WING | Dual | 2W | 2 | Other Transistors | 13 ns | 13ns | 32 ns | 34 ns | -4.9A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1V | 30A | 140 mJ | -30V | 2 P-Channel (Dual) | 710pF @ 25V | 58m Ω @ 4.9A, 10V | 3V @ 250μA | 34nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| FDPC8014AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-fdpc8014as-datasheets-0021.pdf | 8-PowerWDFN | 23 Weeks | 207.7333mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 2.3W | 260 | Dual | NOT SPECIFIED | 40A | 25V | 2.1W 2.3W | 2 N-Channel (Dual) Asymmetrical | 2375pF @ 13V | 3.8m Ω @ 20A, 10V | 2.5V @ 250μA | 20A 40A | 35nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5873NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5873nlt1g-datasheets-5808.pdf | 8-PowerTDFN | Lead Free | 6 | 13 Weeks | 37.393021mg | 8 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | YES | 3.1W | FLAT | 8 | Dual | 3.1W | 2 | FET General Purpose Power | R-PDSO-F6 | 10A | 20V | SILICON | DRAIN | 60V | METAL-OXIDE SEMICONDUCTOR | 190A | 0.013Ohm | 40 mJ | 60V | 2 N-Channel (Dual) | 1560pF @ 25V | 13m Ω @ 15A, 10V | 2.5V @ 250μA | 30.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| TC6321T-V/9U | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/microchiptechnology-tc6321tv9u-datasheets-9933.pdf | 8-VDFN Exposed Pad | 8 | 7 Weeks | TS 16949 | YES | DUAL | NO LEAD | 2 | R-PDSO-N8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 200V | 200V | METAL-OXIDE SEMICONDUCTOR | 7Ohm | N and P-Channel | 110pF @ 25V 200pF @ 25V | 7 Ω @ 1A, 10V, 8 Ω @ 1A, 10V | 2V @ 1mA, 2.4V @ 1mA | 2A Ta | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD6H840NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-nvmfd6h840nlt1g-datasheets-0561.pdf | 8-PowerTDFN | 48 Weeks | yes | 80V | 2 N-Channel (Dual) | 2002pF @ 40V | 6.9m Ω @ 20A, 10V | 2V @ 96μA | 14A Ta 74A Tc | 32nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C446NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | RoHS Compliant | /files/onsemiconductor-nvmfd5c446nt1g-datasheets-5140.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.2W Ta 89W Tc | 2 N-Channel (Dual) | 2450pF @ 25V | 2.9m Ω @ 30A, 10V | 3.5V @ 250μA | 24A Ta 127A Tc | 38nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS3606AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms3606as-datasheets-9924.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | 7 | 18 Weeks | 90mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1W | QUAD | Dual | 2.5W | 2 | FET General Purpose Power | R-PQFP-N7 | 5.5ns | 3.4 ns | 36 ns | 27A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2V | 1.3A | 75 pF | 30V | 2 N-Channel (Dual) Asymmetrical | 1695pF @ 15V | 8m Ω @ 13A, 10V | 2.7V @ 250μA | 13A 27A | 29nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| AOE6936 | Alpha & Omega Semiconductor Inc. | $0.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-VDFN Exposed Pad | 18 Weeks | 8-DFN (5x6) | 30V | 24W 39W | 2 N-Channel (Dual) Asymmetrical | 1150pF @ 15V 2270pF @ 15V | 5mOhm @ 20A, 10V, 2mOhm @ 20A, 10V | 2.2V @ 250μA, 2.1V @ 250μA | 55A Tc 85A Tc | 15nC @ 4.5V, 25nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8K15TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 2W | 9A | 30V | 2W | 2 N-Channel (Dual) | 630pF @ 10V | 21m Ω @ 9A, 10V | 2.5V @ 1mA | 8.5nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8J65TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 2W | *J65 | 7A | 30V | 2W | 2 P-Channel (Dual) | 1200pF @ 10V | 29m Ω @ 7A, 10V | 2.5V @ 1mA | 18nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSG0813NDIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~155°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsg0813ndiatma1-datasheets-9911.pdf | 8-PowerTDFN | Contains Lead | 7 | 26 Weeks | 8 | yes | EAR99 | Tin | not_compliant | e3 | Halogen Free | 2.5W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N7 | 33A | 16V | 25V | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | SOURCE | METAL-OXIDE SEMICONDUCTOR | 2.5W | 19A | 160A | 0.004Ohm | 30 mJ | 2 N-Channel (Dual) Asymmetrical | 1100pF @ 12V | 3m Ω @ 20A, 10V | 2V @ 250μA | 19A 33A | 8.4nC @ 4.5V | Logic Level Gate, 4.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||
| SI7946ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/vishaysiliconix-si7946adpt1ge3-datasheets-9918.pdf | PowerPAK® SO-8 Dual | 14 Weeks | EAR99 | NOT SPECIFIED | 2 | NOT SPECIFIED | 150V | 19.8W | 2 N-Channel (Dual) | 230pF @ 75V | 186m Ω @ 3A, 10V | 3.5V @ 250μA | 7.7A Tc | 6.5nC @ 7.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5483NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5483nlwft3g-datasheets-9880.pdf | 8-PowerTDFN | Lead Free | 6 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 3.1W | 8 | Dual | 3.1W | 2 | 6.8 ns | 10.3ns | 23.5 ns | 37.5 ns | 6.4A | 20V | 60V | 2 N-Channel (Dual) | 668pF @ 25V | 36m Ω @ 15A, 10V | 2.5V @ 250μA | 23.4nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTLLD4951NFTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-ntlld4951nftwg-datasheets-9921.pdf | 8-PowerWDFN | 10 Weeks | EAR99 | e3 | Tin (Sn) | 810mW | FET General Purpose Powers | 6.3A | 30V | METAL-OXIDE SEMICONDUCTOR | 800mW 810mW | 13A | 2 N-Channel (Dual) Asymmetrical | 605pF @ 15V | 17.4m Ω @ 9A, 10V | 2.2V @ 250μA | 5.5A 6.3A | 12nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8M10TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-sp8m10fu6tb-datasheets-6103.pdf | 7A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | e2 | TIN COPPER | 2W | DUAL | GULL WING | 260 | *M10 | 8 | 10 | 2 | Other Transistors | Not Qualified | 25ns | 4.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 7A | 0.037Ohm | N and P-Channel | 600pF @ 10V | 25m Ω @ 7A, 10V | 2.5V @ 1mA | 7A 4.5A | 8.4nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI4808DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4808dyt1e3-datasheets-9830.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 6 Weeks | 22mOhm | 8 | yes | EAR99 | unknown | e3 | PURE MATTE TIN | 1.1W | GULL WING | 260 | 8 | 30 | 2W | 2 | FET General Purpose Power | Not Qualified | 5.7A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 30V | METAL-OXIDE SEMICONDUCTOR | 30V | 2 N-Channel (Dual) | 22m Ω @ 7.5A, 10V | 800mV @ 250μA (Min) | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFN8458TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/infineontechnologies-auirfn8458tr-datasheets-9860.pdf | 8-PowerTDFN | 11 Weeks | 8mOhm | 8 | Tin | 34W | 2 | Dual | PQFN (5x6) | 9.7 ns | 71ns | 19 ns | 11 ns | 43A | 20V | 40V | 34W Tc | 10mOhm | 2 N-Channel (Dual) | 1060pF @ 25V | 10mOhm @ 26A, 10V | 3.9V @ 25μA | 43A Tc | 33nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS7700S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms7700s-datasheets-9936.pdf | 8-PowerWDFN | 5mm | 800μm | 6mm | Lead Free | 6 | 16 Weeks | 211mg | No SVHC | 7.5MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 1W | 2 | Dual | 1W | 2 | FET General Purpose Power | 150°C | R-PDSO-N6 | 9.2ns | 6.8 ns | 58 ns | 30A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 40A | 30V | 2 N-Channel (Dual) | 1750pF @ 15V | 1.8 V | 7.5m Ω @ 12A, 10V | 3V @ 250μA | 12A 22A | 28nC @ 10V | Logic Level Gate |
