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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| GWM120-0075P3-SL | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-gwm1200075p3-datasheets-4144.pdf | 17-SMD, Flat Leads | 17 | EAR99 | DUAL | GWM120 | 6 | Not Qualified | R-PDFP-F17 | 510 ns | 118A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 75V | METAL-OXIDE SEMICONDUCTOR | 0.0055Ohm | 75V | 6 N-Channel (3-Phase Bridge) | 5.5m Ω @ 60A, 10V | 4V @ 1mA | 100nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| GWM180-004X2-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-gwm180004x2smd-datasheets-0364.pdf | 17-SMD, Gull Wing | 17 | yes | EAR99 | DUAL | NOT SPECIFIED | 17 | NOT SPECIFIED | 6 | FET General Purpose Power | Not Qualified | R-XDSO-G17 | 180A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 0.0025Ohm | 6 N-Channel (3-Phase Bridge) | 2.5m Ω @ 100A, 10V | 4.5V @ 1mA | 110nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| GWM120-0075P3-SMD SAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 2008 | /files/ixys-gwm1200075p3-datasheets-4144.pdf | 17-SMD, Gull Wing | GWM120 | 75V | 6 N-Channel (3-Phase Bridge) | 5.5m Ω @ 60A, 10V | 4V @ 1mA | 118A | 100nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD5C650NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | RoHS Compliant | /files/onsemiconductor-ntmfd5c650nlt1g-datasheets-0366.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 5 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.5W Ta 125W Tc | 2 N-Channel (Dual) | 2546pF @ 25V | 4.2m Ω @ 20A, 10V | 2.2V @ 98μA | 21A Ta 111A Tc | 37nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GWM100-01X1-SLSAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/ixys-gwm10001x1sl-datasheets-5730.pdf | 17-SMD, Flat Leads | GWM100 | 90A | 100V | 6 N-Channel (3-Phase Bridge) | 8.5m Ω @ 80A, 10V | 4.5V @ 250μA | 90nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7911TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irfh7911trpbf-datasheets-0368.pdf | 18-PowerVQFN | 5.9944mm | 939.8μm | 5mm | Lead Free | 6 | 39 Weeks | No SVHC | 8.6MOhm | 18 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | 3.4W | QUAD | NO LEAD | 260 | IRFH7911PBF | Dual | 30 | 2.4W | 2 | FET General Purpose Power | Not Qualified | R-PQFP-N6 | 13A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.4W 3.4W | 100A | 30V | 2 N-Channel (Dual) | 1060pF @ 15V | 2.35 V | 8.6m Ω @ 12A, 10V | 2.35V @ 25μA | 13A 28A | 12nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||
| GWM100-01X1-SMDSAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/ixys-gwm10001x1sl-datasheets-5730.pdf | 17-SMD, Gull Wing | GWM100 | 90A | 100V | 6 N-Channel (3-Phase Bridge) | 8.5m Ω @ 80A, 10V | 4.5V @ 250μA | 90nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTI200WX75GD-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | ENHANCEMENT MODE | ISOPLUS-DIL™ | 24 | 28 Weeks | EAR99 | HIGH RELIABILITY | e3 | TIN OVER NICKEL | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 6 | R-PDSO-G24 | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 75V | 75V | METAL-OXIDE SEMICONDUCTOR | 255A | 0.0013Ohm | 6 N-Channel (3-Phase Bridge) | 14400pF @ 38V | 1.3m Ω @ 100A, 10V | 3.8V @ 275μA | 255A Tc | 155nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
| GMM3X100-01X1-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-gmm3x10001x1smd-datasheets-0345.pdf | 24-SMD, Gull Wing | 24 | EAR99 | Tin (984) Over Nickel (39) | DUAL | 24 | 6 | FET General Purpose Power | Not Qualified | R-PDSO-G24 | 90A | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 0.0085Ohm | 6 N-Channel (3-Phase Bridge) | 4.5V @ 1mA | 90nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| GMM3X60-015X2-SMD | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tray | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-gmm3x60015x2smd-datasheets-0346.pdf | ISOPLUS-DIL™ | 24 | EAR99 | e2 | TIN SILVER | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 6 | FET General Purpose Power | R-PDSO-G24 | 50A | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 150V | 150V | METAL-OXIDE SEMICONDUCTOR | 57A | 0.024Ohm | 6 N-Channel (3-Phase Bridge) | 5800pF @ 25V | 24m Ω @ 38A, 10V | 4.5V @ 1mA | 97nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||
| MTI85W100GC-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | ENHANCEMENT MODE | 17-SMD, Gull Wing | 17 | 28 Weeks | EAR99 | YES | DUAL | 6 | R-PDSO-G17 | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 110A | 0.00395Ohm | 6 N-Channel (3-Phase Bridge) | 4m Ω @ 80A, 10V | 3.5V @ 150μA | 120A Tc | 88nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FMM22-05PF | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-fmm2205pf-datasheets-0347.pdf | i4-Pac™-5 | 5 | 30 Weeks | 5 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 132W | SINGLE | NOT SPECIFIED | FMM | 5 | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | 13A | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | METAL-OXIDE SEMICONDUCTOR | 132W | 0.27Ohm | 2 N-Channel (Dual) | 2630pF @ 25V | 270m Ω @ 11A, 10V | 5V @ 1mA | 50nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||
| FMM65-015P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/ixys-fmm65015p-datasheets-0348.pdf | i4-Pac™-5 | 5 | yes | EAR99 | HIGH RELIABILITY, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | FMM | 5 | NOT SPECIFIED | 2 | Not Qualified | R-PSIP-T5 | 65A | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 150V | 150V | METAL-OXIDE SEMICONDUCTOR | 0.022Ohm | 2 N-Channel (Dual) | 22m Ω @ 50A, 10V | 4V @ 1mA | 230nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||
| IRFH4251DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FASTIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfh4251dtrpbf-datasheets-0009.pdf | 8-PowerVDFN | 6mm | 900μm | 5mm | Lead Free | 8 | 14 Weeks | No SVHC | 8 | EAR99 | No | 63W | Dual | 2 | FET General Purpose Power | 188A | 20V | SILICON | SOURCE | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | 1.6V | 31W 63W | 45A | 0.0046Ohm | 61 mJ | 2 N-Channel (Dual), Schottky | 1314pF @ 13V | 3.2m Ω @ 30A, 10V | 2.1V @ 35μA | 64A 188A | 15nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| FMP76-01T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | ENHANCEMENT MODE | 2012 | /files/ixys-fmp76010t-datasheets-0325.pdf | ISOPLUSi5-Pak™ | 5 | 28 Weeks | EAR99 | AVALANCHE RATED, UL RECOGNIZED | NO | SINGLE | 5 | 2 | Not Qualified | R-PSIP-T5 | SILICON | COMPLEX | ISOLATED | SWITCHING | N-CHANNEL AND P-CHANNEL | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 89W 132W | 62A | 300A | 0.011Ohm | 500 mJ | N and P-Channel, Common Drain | 1370pF @ 25V 5080pF @ 25V | 24m Ω @ 38A, 10V, 11m Ω @ 25A, 10V | 4V @ 250μA, 4.5V @ 250μA | 54A Tc 62A Tc | 197nC @ 10V, 104nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||
| FMM75-01F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/ixys-fmm7501f-datasheets-0332.pdf | i4-Pac™-5 | 5 | 32 Weeks | 5 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | FMM | 5 | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | 60ns | 60 ns | 80 ns | 75A | 20V | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 0.021Ohm | 100V | 2 N-Channel (Dual) | 25m Ω @ 50A, 10V | 4V @ 4mA | 180nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||
| ALD1101BPAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2003 | /files/advancedlineardevicesinc-ald1101asal-datasheets-9948.pdf | 8-DIP (0.300, 7.62mm) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-PDIP | 40mA | 13.2V | 10.6V | 500mW | 75Ohm | -12V | 2 N-Channel (Dual) Matched Pair | 75Ohm @ 5V | 1V @ 10μA | Standard | 75 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| GMM3X180-004X2-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-gmm3x180004x2smd-datasheets-0335.pdf | 24-SMD, Gull Wing | 24 | yes | EAR99 | DUAL | NOT SPECIFIED | 24 | NOT SPECIFIED | 6 | FET General Purpose Power | Not Qualified | R-PDSO-G24 | 180A | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 0.0025Ohm | 6 N-Channel (3-Phase Bridge) | 4.5V @ 1mA | 110nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| FMP36-015P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-fmp36015p-datasheets-0338.pdf | i4-Pac™-5 | 5 | 5 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 125W | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 2 | Other Transistors | Not Qualified | 22A | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL AND P-CHANNEL | 150V | METAL-OXIDE SEMICONDUCTOR | 36A | 0.04Ohm | 1000 mJ | N and P-Channel | 2250pF @ 25V | 40m Ω @ 31A, 10V | 5.5V @ 250μA | 36A 22A | 70nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||
| GMM3X180-004X2-SMDSAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/ixys-gmm3x180004x2smd-datasheets-0335.pdf | 24-SMD, Gull Wing | 180A | 40V | 6 N-Channel (3-Phase Bridge) | 4.5V @ 1mA | 110nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1110ESAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD® | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2003 | /files/advancedlineardevicesinc-ald1108escl-datasheets-0221.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | 8 | 600mW | 600mW | 8-SOIC | 2.5pF | 3mA | 10V | 600mW | 500Ohm | 10V | 2 N-Channel (Dual) Matched Pair | 2.5pF @ 5V | 500Ohm @ 5V | 1.01V @ 1μA | Standard | 500 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD310704APCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Through Hole | 0°C~70°C | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/advancedlineardevicesinc-ald310704scl-datasheets-0230.pdf | 16-DIP (0.300, 7.62mm) | 8 Weeks | 16-PDIP | 8V | 500mW | 4 P-Channel, Matched Pair | 2.5pF @ 5V | 380mV @ 1μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GWM100-0085X1-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-gwm1000085x1smd-datasheets-0342.pdf | 17-SMD, Gull Wing | 17 | yes | EAR99 | DUAL | NOT SPECIFIED | GWM100 | 17 | NOT SPECIFIED | 6 | FET General Purpose Power | Not Qualified | R-PDSO-G17 | 103A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 85V | 85V | METAL-OXIDE SEMICONDUCTOR | 0.0062Ohm | 6 N-Channel (3-Phase Bridge) | 6.2m Ω @ 75A, 10V | 4V @ 250μA | 114nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| FMM150-0075X2F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-fmm1500075x2f-datasheets-0318.pdf | ISOPLUSi5-Pak™ | 5 | 30 Weeks | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | e1 | TIN SILVER COPPER | 170W | SINGLE | 5 | 170W | 2 | FET General Purpose Power | R-PSIP-T5 | 120A | SILICON | ISOLATED | SWITCHING | 75V | 75V | METAL-OXIDE SEMICONDUCTOR | 500A | 0.0058Ohm | 850 mJ | 2 N-Channel (Dual) Asymmetrical | 10500pF @ 25V | 5.8m Ω @ 100A, 10V | 4V @ 250μA | 178nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||
| ALD110808APCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD® | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald110908asal-datasheets-9244.pdf | 16-DIP (0.300, 7.62mm) | 8 Weeks | 16 | 500mW | 500mW | 16-PDIP | 2.5pF | 10 ns | 3mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 4 N-Channel, Matched Pair | 2.5pF @ 5V | 500Ohm @ 4.8V | 810mV @ 1μA | 12mA 3mA | Standard | 500 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1101APAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2003 | /files/advancedlineardevicesinc-ald1101asal-datasheets-9948.pdf | 8-DIP (0.300, 7.62mm) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-PDIP | 10pF | 40mA | 13.2V | 10.6V | 500mW | 75Ohm | -12V | 2 N-Channel (Dual) Matched Pair | 10pF @ 5V | 75Ohm @ 5V | 1V @ 10μA | Standard | 75 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD114804APCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD® | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald114904sal-datasheets-3047.pdf | 16-DIP (0.300, 7.62mm) | 8 Weeks | 16 | 500mW | 500mW | 16-PDIP | 2.5pF | 10 ns | 3mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 4 N-Channel, Matched Pair | 2.5pF @ 5V | 500Ohm @ 3.6V | 380mV @ 1μA | 12mA 3mA | Depletion Mode | 500 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||
| FMP76-010T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Trench™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-fmp76010t-datasheets-0325.pdf | i4-Pac™-5 | 5 | 5 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 132W | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 2 | Other Transistors | Not Qualified | 54A | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL AND P-CHANNEL | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 89W 132W | 62A | 300A | 0.011Ohm | N and P-Channel | 5080pF @ 25V | 11m Ω @ 25A, 10V | 4.5V @ 250μA | 62A 54A | 104nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||
| FMM60-02TF | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-fmm6002tf-datasheets-0326.pdf | i4-Pac™-5 | Lead Free | 5 | 30 Weeks | 5 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 125W | SINGLE | NOT SPECIFIED | FMM | 5 | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | 33A | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | METAL-OXIDE SEMICONDUCTOR | 125W | 0.04Ohm | 1000 mJ | 2 N-Channel (Dual) | 3700pF @ 25V | 40m Ω @ 30A, 10V | 4.5V @ 250μA | 90nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||
| ALD210808APCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2014 | /files/advancedlineardevicesinc-ald210808scl-datasheets-0226.pdf | 16-DIP (0.300, 7.62mm) | 8 Weeks | 1.025005g | 16 | 500mW | 4 | 16-PDIP | 10 ns | 10 ns | 80mA | 10.6V | 10.6V | 500mW | 25Ohm | 10V | 4 N-Channel, Matched Pair | 20mV @ 10μA | 80mA | Logic Level Gate |
