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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power - Max | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| MCB30P1200LB-TRR | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MCB30P1200LB | Surface Mount | 9-PowerSMD | 28 Weeks | 1200V | 4 N-Channel (Half Bridge) | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCB30P1200LB-TUB | IXYS | $123.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MCB30P1200LB | Surface Mount | 9-PowerSMD | 28 Weeks | 1200V | 4 N-Channel (Half Bridge) | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50AM38FTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50am38ftg-datasheets-0464.pdf | SP4 | 12 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 694W | UPPER | UNSPECIFIED | 12 | 694W | 2 | 18 ns | 35ns | 77 ns | 87 ns | 90A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 360A | 0.038Ohm | 2 N-Channel (Half Bridge) | 11200pF @ 25V | 45m Ω @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | Standard | ||||||||||||||||||||||||||||||||
| IXFN130N90SK | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | SOT-227-4, miniBLOC | 28 Weeks | 900V | 2 N-Channel (Dual) | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM10DSKM09T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm10dskm09t3g-datasheets-0440.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 25 | 390W | 2 | 35 ns | 70ns | 125 ns | 95 ns | 139A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 0.01Ohm | 2 N-Channel (Dual) | 9875pF @ 25V | 10m Ω @ 69.5A, 10V | 4V @ 2.5mA | 350nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| APTC60DDAM24T3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptc60ddam24t3g-datasheets-0442.pdf | SP3 | 27 | 36 Weeks | 3 | EAR99 | AVALANCHE RATED | 462W | UPPER | UNSPECIFIED | 2 | 95A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 1900 mJ | 2 N Channel (Dual Buck Chopper) | 14400pF @ 25V | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | Super Junction | ||||||||||||||||||||||||||||||||||||||||||||
| APTC80A15SCTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-aptc80a15sctg-datasheets-0444.pdf | SP4 | 10 | 36 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | ULTRA-LOW RESISTANCE, AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 277W | UPPER | UNSPECIFIED | 10 | 277W | 2 | R-XUFM-X10 | 10 ns | 13ns | 35 ns | 83 ns | 28A | 30V | SILICON | ISOLATED | SWITCHING | 800V | 800V | METAL-OXIDE SEMICONDUCTOR | 0.15Ohm | 670 mJ | 2 N-Channel (Half Bridge) | 4507pF @ 25V | 150m Ω @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | Standard | |||||||||||||||||||||||||||||||
| APTC60BBM24T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Screw | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptc60bbm24t3g-datasheets-0446.pdf | SP3 | 36 Weeks | 3 | EAR99 | No | 462W | 2 | FET General Purpose Power | 21 ns | 30ns | 45 ns | 100 ns | 95A | 20V | 600V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Half Bridge) | 14400pF @ 25V | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60HM70T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptc60hm70t1g-datasheets-0447.pdf | SP1 | 12 | 36 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 250W | UPPER | THROUGH-HOLE | 12 | 250W | 4 | FET General Purpose Power | 21 ns | 30ns | 84 ns | 283 ns | 39A | 20V | SILICON | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.07Ohm | 4 N-Channel (H-Bridge) | 7000pF @ 25V | 70m Ω @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| APTC60AM45BC1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptc60am45bc1g-datasheets-0448.pdf | SP1 | 36 Weeks | 1 | EAR99 | No | 250W | 250W | 3 | Other Transistors | 21 ns | 30ns | 45 ns | 100 ns | 49A | 20V | 600V | METAL-OXIDE SEMICONDUCTOR | 3 N Channel (Phase Leg + Boost Chopper) | 7200pF @ 25V | 45m Ω @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| APTC60VDAM24T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptc60vdam24t3g-datasheets-0449.pdf | SP3 | 20 | 36 Weeks | 3 | IN PRODUCTION (Last Updated: 2 weeks ago) | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 462W | UPPER | UNSPECIFIED | 25 | 2 | FET General Purpose Power | 21 ns | 30ns | 45 ns | 100 ns | 95A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 1900 mJ | 2 N-Channel (Dual) | 14400pF @ 25V | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||||
| APTM50HM75FT3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50hm75ft3g-datasheets-0451.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 357W | UPPER | UNSPECIFIED | 25 | 357W | 4 | R-XUFM-X25 | 18 ns | 35ns | 77 ns | 87 ns | 46A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.09Ohm | 2500 mJ | 4 N-Channel (H-Bridge) | 5600pF @ 25V | 90m Ω @ 23A, 10V | 5V @ 2.5mA | 123nC @ 10V | Standard | |||||||||||||||||||||||||||||||
| APTM100H46FT3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptm100h46ft3g-datasheets-0427.pdf | SP3 | 36 Weeks | 3 | EAR99 | 357W | 357W | 4 | FET General Purpose Power | 19A | 30V | 1000V 1kV | METAL-OXIDE SEMICONDUCTOR | 4 N-Channel (H-Bridge) | 6800pF @ 25V | 552m Ω @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100DSK35T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm100dsk35t3g-datasheets-0429.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 25 | 390W | 2 | 18 ns | 12ns | 40 ns | 155 ns | 22A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 88A | 2 N-Channel (Dual) | 5200pF @ 25V | 420m Ω @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| VMM85-02F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-vmm8502f-datasheets-0432.pdf | Y4-M6 | 7 | yes | EAR99 | 370W | UPPER | UNSPECIFIED | NOT SPECIFIED | VMM | Dual | NOT SPECIFIED | 370W | 2 | FET General Purpose Power | Not Qualified | R-PUFM-X7 | 80ns | 100 ns | 200 ns | 84A | 20V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 83A | 335A | 0.02Ohm | 200V | 2 N-Channel (Dual) | 15000pF @ 25V | 25m Ω @ 500mA, 10V | 4V @ 8mA | 450nC @ 10V | Standard | ||||||||||||||||||||||||||||||||
| VKM60-01P1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/ixys-vkm6001p1-datasheets-0433.pdf | ECO-PAC2 | 15 | 12 Weeks | 13 | yes | EAR99 | HIGH RELIABILITY | 300W | UPPER | UNSPECIFIED | NOT SPECIFIED | 15 | NOT SPECIFIED | 4 | Not Qualified | R-XUFM-X15 | 75A | SILICON | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 300W | 300A | 0.025Ohm | 4 N-Channel (H-Bridge) | 4500pF @ 25V | 25m Ω @ 500mA, 10V | 4V @ 4mA | 260nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||
| APTC60VDAM45T1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptc60vdam45t1g-datasheets-0434.pdf | SP1 | 12 | 36 Weeks | 1 | IN PRODUCTION (Last Updated: 2 weeks ago) | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 250W | UPPER | UNSPECIFIED | 12 | 250W | 2 | FET General Purpose Power | 21 ns | 30ns | 45 ns | 100 ns | 49A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.045Ohm | 2 N-Channel (Dual) | 7200pF @ 25V | 45m Ω @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | Super Junction | ||||||||||||||||||||||||||||||||||
| APTC60AM35T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptc60am35t1g-datasheets-0435.pdf | SP1 | 12 | 36 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 416W | UPPER | THROUGH-HOLE | 12 | 416W | 2 | FET General Purpose Power | 21 ns | 30ns | 84 ns | 283 ns | 72A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.035Ohm | 2 N-Channel (Half Bridge) | 14000pF @ 25V | 35m Ω @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| APTM10HM19FT3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm10hm19ft3g-datasheets-0437.pdf | SP3 | 73.4mm | 11.5mm | 40.8mm | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 208W | UPPER | UNSPECIFIED | 25 | 1 | Single | 208W | 4 | R-XUFM-X25 | 35 ns | 70ns | 125 ns | 95 ns | 70A | 30V | SILICON | ISOLATED | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 100V | 4 N-Channel (H-Bridge) | 5100pF @ 25V | 21m Ω @ 35A, 10V | 4V @ 1mA | 200nC @ 10V | Standard | |||||||||||||||||||||||||||||
| ALD114913PAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD® | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald114913sal-datasheets-9220.pdf | 8-DIP (0.300, 7.62mm) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-PDIP | 2.5pF | 10 ns | 3mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 2 N-Channel (Dual) Matched Pair | 2.5pF @ 5V | 500Ohm @ 2.7V | 1.26V @ 1μA | 12mA 3mA | Depletion Mode | 500 Ω | |||||||||||||||||||||||||||||||||||||||||||||
| ALD210802PCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2014 | /files/advancedlineardevicesinc-ald210802scl-datasheets-0196.pdf | 16-DIP (0.300, 7.62mm) | 8 Weeks | 1.025005g | 16 | 500mW | 4 | 16-PDIP | 10 ns | 10 ns | 80mA | 10.6V | 10.6V | 500mW | 25Ohm | 10V | 4 N-Channel, Matched Pair | 20mV @ 10μA | 80mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| ALD110808PCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD® | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/advancedlineardevicesinc-ald110908asal-datasheets-9244.pdf | 16-DIP (0.300, 7.62mm) | 8 Weeks | 16 | 500mW | 500mW | 16-PDIP | 2.5pF | 10 ns | 3mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 4 N-Channel, Matched Pair | 2.5pF @ 5V | 500Ohm @ 4.8V | 820mV @ 1μA | 12mA 3mA | Standard | 500 Ω | ||||||||||||||||||||||||||||||||||||||||||||||
| ALD114904PAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD® | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald114904sal-datasheets-3047.pdf | 8-DIP (0.300, 7.62mm) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-PDIP | 2.5pF | 10 ns | 3mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 2 N-Channel (Dual) Matched Pair | 2.5pF @ 5V | 500Ohm @ 3.6V | 360mV @ 1μA | 12mA 3mA | Depletion Mode | 500 Ω | |||||||||||||||||||||||||||||||||||||||||||||
| APTM120H140FT1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm120h140ft1g-datasheets-0414.pdf | SP1 | Lead Free | 12 | 36 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 208W | UPPER | UNSPECIFIED | 12 | 208W | 4 | FET General Purpose Power | 26 ns | 15ns | 24 ns | 85 ns | 8A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 8A | 50A | 4 N-Channel (H-Bridge) | 3812pF @ 25V | 1.68 Ω @ 7A, 10V | 5V @ 1mA | 145nC @ 10V | Standard | |||||||||||||||||||||||||||||||
| APTC60HM70T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptc60hm70t3g-datasheets-0416.pdf | SP3 | Lead Free | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 250W | UPPER | UNSPECIFIED | 25 | 250W | 4 | FET General Purpose Power | R-XUFM-X25 | 21 ns | 30ns | 84 ns | 283 ns | 39A | 20V | SILICON | COMPLEX | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 160A | 0.07Ohm | 1800 mJ | 4 N-Channel (H-Bridge) | 7000pF @ 25V | 70m Ω @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | Standard | ||||||||||||||||||||||||||||
| APTC60HM70RT3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Screw | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 1999 | /files/microsemicorporation-aptc60hm70rt3g-datasheets-0419.pdf | SP3 | 36 Weeks | 3 | EAR99 | No | 250W | 250W | 4 | FET General Purpose Power | 21 ns | 30ns | 84 ns | 283 ns | 39A | 20V | 600V | METAL-OXIDE SEMICONDUCTOR | 4 N-Channel (H-Bridge) + Bridge Rectifier | 7000pF @ 25V | 70m Ω @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| APTC60DDAM70T1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptc60ddam70t1g-datasheets-0395.pdf | SP1 | 36 Weeks | 1 | EAR99 | 250W | 250W | 2 | FET General Purpose Power | 39A | 20V | 600V | METAL-OXIDE SEMICONDUCTOR | 2 N Channel (Dual Buck Chopper) | 7000pF @ 25V | 70m Ω @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FPF1C2P5BF07A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-fpf1c2p5bf07a-datasheets-0420.pdf | F1 Module | 13 Weeks | 23g | No SVHC | yes | 250W | 2.5kV | 36A | 650V | 109 ns | 5 N-Channel (Solar Inverter) | 90m Ω @ 27A, 10V | 3.8V @ 250μA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GWM180-004X2-SLSAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 17-SMD, Flat Leads | ISOPLUS-DIL™ | 180A | 40V | 6 N-Channel (3-Phase Bridge) | 2.5mOhm @ 100A, 10V | 4.5V @ 1mA | 180A | 110nC @ 10V | Standard | 2.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60DDAM35T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptc60ddam35t3g-datasheets-0424.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 416W | UPPER | UNSPECIFIED | 25 | 416W | 2 | FET General Purpose Power | 21 ns | 30ns | 84 ns | 283 ns | 72A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 1800 mJ | 2 N-Channel (Dual) | 14000pF @ 25V | 35m Ω @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | Standard |
