Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Peak Non-Repetitive Surge Current | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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AON6884L_002 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 8-PowerSMD, Flat Leads | 40V | 21W | 2 N-Channel (Dual) | 1950pF @ 20V | 11.3m Ω @ 10A, 10V | 2.7V @ 250μA | 34A Tc | 16nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ECH8601M-P-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AON2801L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2013 | 6-WDFN Exposed Pad | compliant | 20V | 1.5W | 2 P-Channel (Dual) | 700pF @ 10V | 120m Ω @ 3A, 4.5V | 1V @ 250μA | 3A Ta | 6.5nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AON5802ALS | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 2016 | 6-SMD, Flat Lead Exposed Pad | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AON5802B_101 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 2013 | 6-SMD, Flat Lead Exposed Pad | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AO8801 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-ao8801-datasheets-1134.pdf | 8-TSSOP (0.173, 4.40mm Width) | 20V | 1.4W | 2 P-Channel (Dual) | 1450pF @ 10V | 42m Ω @ 4.7A, 4.5V | 1V @ 250μA | 4.7A | 17.2nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6L13TU(T5L,F,T) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/toshibasemiconductorandstorage-ssm6l13tut5lft-datasheets-1137.pdf | 6-SMD, Flat Leads | 500mW | 800mA | 20V | N and P-Channel | 268pF @ 10V 250pF @ 10V | 143m Ω @ 600mA, 4V, 234m Ω @ 600mA, 4V | 1V @ 1mA | 800mA Ta | Logic Level Gate, 1.8V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AOD607_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2008 | /files/alphaomegasemiconductorinc-aod607001-datasheets-1138.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 30V | N and P-Channel Complementary | 12A Tc | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
EFC6617R-TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSD340NH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsd340nh6327xtsa1-datasheets-1142.pdf | 6-VSSOP, SC-88, SOT-363 | yes | EAR99 | NOT SPECIFIED | NOT SPECIFIED | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSO4804HUMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C | Tape & Reel (TR) | 1 (Unlimited) | 2017 | 8-SOIC (0.154, 3.90mm Width) | 30V | 2W | 2 N-Channel (Dual) | 870pF @ 25V | 20m Ω @ 8A, 10V | 2V @ 30μA | 8A Ta | 17nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AOC2802_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2015 | 4-UFBGA, WLCSP | 20V | 1.3W | 2 N-Channel (Dual) Common Drain | 1200pF @ 10V | 35m Ω @ 3A, 4.5V | 1.5V @ 250μA | 6A | 10.4nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4532ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4532adyt1ge3-datasheets-1111.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 15 Weeks | 186.993455mg | Unknown | 8 | No | 1.2W | SI4532 | 2 | 8-SO | 8 ns | 9ns | 10 ns | 21 ns | 3.7A | 20V | 30V | 1V | 1.13W 1.2W | 80mOhm | 30V | N and P-Channel | 53mOhm @ 4.9A, 10V | 1V @ 250μA | 3.7A 3A | 16nC @ 10V | Logic Level Gate | 53 mΩ | ||||||||||||||||||||||||||||||||||||
ALD310702SCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Surface Mount | 0°C~70°C | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/advancedlineardevicesinc-ald310702ascl-datasheets-0270.pdf | 16-SOIC (0.154, 3.90mm Width) | 8 Weeks | 16-SOIC | 8V | 500mW | 4 P-Channel, Matched Pair | 2.5pF @ 5V | 180mV @ 1μA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APTC60HM70SCTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-aptc60hm70sctg-datasheets-0705.pdf | SP4 | 14 | 36 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED | e1 | TIN SILVER COPPER | 250W | UPPER | UNSPECIFIED | NOT SPECIFIED | 14 | NOT SPECIFIED | 250W | 4 | FET General Purpose Power | Not Qualified | 21 ns | 30ns | 84 ns | 283 ns | 39A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 156A | 0.07Ohm | 1800 mJ | 4 N-Channel (H-Bridge) | 7000pF @ 25V | 70m Ω @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | Standard | ||||||||||||||||||||||||||||
VBH40-05B | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-vbh4005b-datasheets-0688.pdf | V2-PAK | 23 | 32 Weeks | 23 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | 1.2V | 40A | SILICON | BRIDGE, 4 ELEMENTS WITH BUILT-IN SINGLE PHASE DIODE BRIDGE AND THERMISTOR | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 400A | 4 N-Channel (H-Bridge) | 116m Ω @ 30A, 10V | 4V @ 8mA | 270nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||
APTM100H45FT3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm100h45ft3g-datasheets-0689.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 357W | UPPER | PIN/PEG | 25 | 357W | 4 | R-XUFM-P25 | 10 ns | 12ns | 35 ns | 121 ns | 18A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 72A | 2500 mJ | 4 N-Channel (H-Bridge) | 4350pF @ 25V | 540m Ω @ 9A, 10V | 5V @ 2.5mA | 154nC @ 10V | Standard | |||||||||||||||||||||||||||||||
APTC60AM45B1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptc60am45b1g-datasheets-0687.pdf | SP1 | 36 Weeks | 1 | EAR99 | No | 250W | 250W | 2 | Other Transistors | 21 ns | 30ns | 45 ns | 100 ns | 49A | 20V | 600V | METAL-OXIDE SEMICONDUCTOR | 3 N Channel (Phase Leg + Boost Chopper) | 7200pF @ 25V | 45m Ω @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
MTI145WX100GD-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | ENHANCEMENT MODE | ISOPLUS-DIL™ | 24 | 28 Weeks | EAR99 | e3 | TIN OVER NICKEL | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 6 | R-PDSO-G24 | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 190A | 0.0022Ohm | 6 N-Channel (3-Phase Bridge) | 11100pF @ 50V | 2.2m Ω @ 100A, 10V | 3.5V @ 275μA | 190A Tc | 155nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
GMM3X60-015X2-SMDSAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tray | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/ixys-gmm3x60015x2smd-datasheets-0346.pdf | ISOPLUS-DIL™ | 30 Weeks | 50A | 150V | 6 N-Channel (3-Phase Bridge) | 5800pF @ 25V | 24m Ω @ 38A, 10V | 4.5V @ 1mA | 97nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APTC60HM24T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptc60hm24t3g-datasheets-0660.pdf | SP3 | 20 | 36 Weeks | 3 | EAR99 | 462W | UPPER | UNSPECIFIED | 4 | R-XUFM-X20 | 21 ns | 30ns | 45 ns | 100 ns | 95A | 20V | SILICON | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 260A | 1900 mJ | 4 N-Channel (H-Bridge) | 14400pF @ 25V | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||||||||
VWM270-0075X2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~175°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-vwm2700075x2-datasheets-0582.pdf | V2-PAK | 17 | 17 | EAR99 | UPPER | UNSPECIFIED | NOT SPECIFIED | 24 | NOT SPECIFIED | 6 | FET General Purpose Power | Not Qualified | 270A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 75V | 75V | METAL-OXIDE SEMICONDUCTOR | 0.0021Ohm | 6 N-Channel (3-Phase Bridge) | 2.1m Ω @ 100A, 10V | 4V @ 500μA | 360nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||
APTC60HM45SCTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-aptc60hm45sctg-datasheets-0623.pdf | SP4 | 14 | 36 Weeks | 4 | IN PRODUCTION (Last Updated: 2 weeks ago) | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 250W | UPPER | UNSPECIFIED | 14 | 250W | 4 | Not Qualified | 21 ns | 30ns | 45 ns | 100 ns | 49A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 130A | 1900 mJ | 4 N-Channel (H-Bridge) | 7200pF @ 25V | 45m Ω @ 22.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | Super Junction | ||||||||||||||||||||||||||||||||||
APTC60AM35SCTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptc60am35sctg-datasheets-0552.pdf | SP4 | 10 | 36 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | e1 | TIN SILVER COPPER | 416W | UPPER | UNSPECIFIED | 10 | 416W | 2 | R-XUFM-X10 | 21 ns | 30ns | 84 ns | 283 ns | 72A | 30V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.035Ohm | 1800 mJ | 2 N-Channel (Half Bridge) | 14000pF @ 25V | 35m Ω @ 36A, 10V | 3.9V @ 2mA | 518nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
APTM10TAM19FPG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm10tam19fpg-datasheets-0554.pdf | SP6 | 21 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 208W | UPPER | UNSPECIFIED | 21 | 208W | 6 | R-XUFM-X21 | 35 ns | 70ns | 125 ns | 95 ns | 70A | 30V | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 300A | 0.021Ohm | 1500 mJ | 6 N-Channel (3-Phase Bridge) | 5100pF @ 25V | 21m Ω @ 35A, 10V | 4V @ 1mA | 200nC @ 10V | Standard | ||||||||||||||||||||||||||||||
APTM100A23STG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1999 | /files/microsemicorporation-aptm100a23stg-datasheets-0564.pdf | SP4 | 10 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 694W | UPPER | UNSPECIFIED | 10 | 694W | 2 | R-XUFM-X10 | 10 ns | 12ns | 35 ns | 121 ns | 36A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Half Bridge) | 8700pF @ 25V | 270m Ω @ 18A, 10V | 5V @ 5mA | 308nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
APTM20HM16FTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm20hm16ftg-datasheets-0571.pdf | SP4 | 14 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 14 | 390W | 4 | 32 ns | 64ns | 116 ns | 88 ns | 104A | 30V | SILICON | ISOLATED | SWITCHING | 200V | 200V | METAL-OXIDE SEMICONDUCTOR | 0.019Ohm | 3000 mJ | 4 N-Channel (H-Bridge) | 7220pF @ 25V | 19m Ω @ 52A, 10V | 5V @ 2.5mA | 140nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
ALD310704PCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Through Hole | 0°C~70°C | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/advancedlineardevicesinc-ald310704scl-datasheets-0230.pdf | 16-DIP (0.300, 7.62mm) | 8 Weeks | 16-PDIP | 8V | 500mW | 4 P-Channel, Matched Pair | 2.5pF @ 5V | 380mV @ 1μA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APTM100H35FTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm100h35ftg-datasheets-0537.pdf | SP4 | 14 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 14 | 390W | 4 | 18 ns | 12ns | 40 ns | 155 ns | 22A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 88A | 3000 mJ | 4 N-Channel (H-Bridge) | 5200pF @ 25V | 420m Ω @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
APTM50HM65FTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50hm65ftg-datasheets-0545.pdf | SP4 | 14 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 14 | 390W | 4 | 21 ns | 38ns | 93 ns | 75 ns | 51A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.078Ohm | 3000 mJ | 4 N-Channel (H-Bridge) | 7000pF @ 25V | 78m Ω @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | Standard |
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