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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power - Max | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| ALD310704PCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Through Hole | 0°C~70°C | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/advancedlineardevicesinc-ald310704scl-datasheets-0230.pdf | 16-DIP (0.300, 7.62mm) | 8 Weeks | 16-PDIP | 8V | 500mW | 4 P-Channel, Matched Pair | 2.5pF @ 5V | 380mV @ 1μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100H35FTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm100h35ftg-datasheets-0537.pdf | SP4 | 14 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 14 | 390W | 4 | 18 ns | 12ns | 40 ns | 155 ns | 22A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 88A | 3000 mJ | 4 N-Channel (H-Bridge) | 5200pF @ 25V | 420m Ω @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | Standard | ||||||||||||||||||||||||||
| APTM50HM65FTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50hm65ftg-datasheets-0545.pdf | SP4 | 14 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 14 | 390W | 4 | 21 ns | 38ns | 93 ns | 75 ns | 51A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.078Ohm | 3000 mJ | 4 N-Channel (H-Bridge) | 7000pF @ 25V | 78m Ω @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | Standard | ||||||||||||||||||||||||||
| APTM20HM20STG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm20hm20stg-datasheets-0495.pdf | SP4 | 14 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | 357W | UPPER | UNSPECIFIED | 14 | 357W | 4 | FET General Purpose Power | 28 ns | 56ns | 99 ns | 81 ns | 89A | 30V | SILICON | ISOLATED | SWITCHING | 200V | 200V | METAL-OXIDE SEMICONDUCTOR | 356A | 2500 mJ | 4 N-Channel (H-Bridge) | 6850pF @ 25V | 24m Ω @ 44.5A, 10V | 5V @ 2.5mA | 112nC @ 10V | Standard | |||||||||||||||||||||||||||
| APTM10HM09FT3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm10hm09ft3g-datasheets-0497.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | 390W | UPPER | PIN/PEG | 25 | 390W | 4 | FET General Purpose Power | R-XUFM-P25 | 35 ns | 70ns | 125 ns | 95 ns | 139A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 0.01Ohm | 4 N-Channel (H-Bridge) | 9875pF @ 25V | 10m Ω @ 69.5A, 10V | 4V @ 2.5mA | 350nC @ 10V | Standard | ||||||||||||||||||||||||||
| APTM20HM20FTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | /files/microsemicorporation-aptm20hm20ftg-datasheets-0500.pdf | SP4 | 14 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 357W | UPPER | UNSPECIFIED | 14 | 357W | 4 | 28 ns | 56ns | 99 ns | 81 ns | 89A | 30V | SILICON | ISOLATED | SWITCHING | 200V | 200V | METAL-OXIDE SEMICONDUCTOR | 356A | 2500 mJ | 4 N-Channel (H-Bridge) | 6850pF @ 25V | 24m Ω @ 44.5A, 10V | 5V @ 2.5mA | 112nC @ 10V | Standard | ||||||||||||||||||||||||||
| APTM50H10FT3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm50h10ft3g-datasheets-0502.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 312W | UPPER | UNSPECIFIED | 25 | 312W | 4 | R-XUFM-X25 | 15 ns | 21ns | 52 ns | 73 ns | 37A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.12Ohm | 1600 mJ | 4 N-Channel (H-Bridge) | 4367pF @ 25V | 120m Ω @ 18.5A, 10V | 5V @ 1mA | 96nC @ 10V | Standard | ||||||||||||||||||||||||
| APTM50DHM38G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50dhm38g-datasheets-0505.pdf | SP6 | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 1 month ago) | No | 694W | 694W | 2 | SP6 | 11.2nF | 18 ns | 35ns | 77 ns | 87 ns | 90A | 30V | 500V | 694W | 2 N-Channel (Dual) Asymmetrical | 11200pF @ 25V | 45mOhm @ 45A, 10V | 5V @ 5mA | 90A | 246nC @ 10V | Standard | 45 mΩ | |||||||||||||||||||||||||||||||||||
| APTM120A29FTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm120a29ftg-datasheets-0507.pdf | SP4 | 12 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 780W | UPPER | UNSPECIFIED | 12 | 780W | 2 | 20 ns | 15ns | 45 ns | 160 ns | 34A | 30V | SILICON | ISOLATED | SWITCHING | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 136A | 3000 mJ | 2 N-Channel (Half Bridge) | 10300pF @ 25V | 348m Ω @ 17A, 10V | 5V @ 5mA | 374nC @ 10V | Standard | |||||||||||||||||||||||||||
| APTM10AM05FTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm10am05ftg-datasheets-0509.pdf | SP4 | 12 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 780W | UPPER | UNSPECIFIED | 12 | 780W | 2 | 80 ns | 165ns | 135 ns | 280 ns | 278A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 1100A | 0.005Ohm | 3000 mJ | 2 N-Channel (Half Bridge) | 20000pF @ 25V | 5m Ω @ 125A, 10V | 4V @ 5mA | 700nC @ 10V | Standard | |||||||||||||||||||||||||
| APTM20AM08FTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm20am08ftg-datasheets-0511.pdf | SP4 | 12 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 781W | UPPER | UNSPECIFIED | 12 | 781W | 2 | 32 ns | 64ns | 116 ns | 88 ns | 208A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 0.01Ohm | 3000 mJ | 2 N-Channel (Half Bridge) | 14400pF @ 25V | 10m Ω @ 104A, 10V | 5V @ 5mA | 280nC @ 10V | Standard | |||||||||||||||||||||||||||
| APTM50HM75SCTG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm50hm75sctg-datasheets-0513.pdf | SP4 | 14 | 36 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 357W | UPPER | UNSPECIFIED | 14 | 357W | 4 | 18 ns | 35ns | 77 ns | 87 ns | 46A | 30V | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.09Ohm | 2500 mJ | 4 N-Channel (H-Bridge) | 5590pF @ 25V | 90m Ω @ 23A, 10V | 5V @ 2.5mA | 123nC @ 10V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||
| APTM50DDAM65T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm50ddam65t3g-datasheets-0485.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 25 | 390W | 2 | 21 ns | 38ns | 93 ns | 75 ns | 51A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.078Ohm | 2 N-Channel (Dual) | 7000pF @ 25V | 78m Ω @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | Standard | ||||||||||||||||||||||||||||
| APTM50H15FT1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/microsemicorporation-aptm50h15ft1g-datasheets-0488.pdf | SP1 | 12 | 36 Weeks | 1 | EAR99 | AVALANCHE RATED | No | 208W | UPPER | UNSPECIFIED | 12 | 208W | 4 | FET General Purpose Power | 29 ns | 35ns | 26 ns | 80 ns | 25A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 4 N-Channel (H-Bridge) | 5448pF @ 25V | 180m Ω @ 21A, 10V | 5V @ 1mA | 170nC @ 10V | Standard | |||||||||||||||||||||||||||||
| APTC60HM70BT3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | RoHS Compliant | 2016 | /files/microsemicorporation-aptc60hm70bt3g-datasheets-0490.pdf | SP3 | 36 Weeks | 22 | EAR99 | No | 250W | 250W | 5 | FET General Purpose Power | 21 ns | 30ns | 84 ns | 283 ns | 39A | 20V | 600V | METAL-OXIDE SEMICONDUCTOR | 4 N-Channel (H-Bridge) | 700pF @ 25V | 70m Ω @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| APTM50HM75FTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50hm75ftg-datasheets-0491.pdf | SP4 | 14 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 357W | UPPER | UNSPECIFIED | 14 | 357W | 4 | 18 ns | 35ns | 77 ns | 87 ns | 46A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.09Ohm | 2500 mJ | 4 N-Channel (H-Bridge) | 5600pF @ 25V | 90m Ω @ 23A, 10V | 5V @ 2.5mA | 123nC @ 10V | Standard | ||||||||||||||||||||||||||
| APTC60HM45T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw, Through Hole | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptc60hm45t1g-datasheets-0493.pdf | SP1 | 12 | 36 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 250W | UPPER | 12 | 250W | 4 | FET General Purpose Power | 21 ns | 30ns | 45 ns | 100 ns | 49A | 20V | SILICON | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 4 N-Channel (H-Bridge) | 7200pF @ 25V | 45m Ω @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | Standard | |||||||||||||||||||||||||||||
| APTM50AM38FTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50am38ftg-datasheets-0464.pdf | SP4 | 12 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 694W | UPPER | UNSPECIFIED | 12 | 694W | 2 | 18 ns | 35ns | 77 ns | 87 ns | 90A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 360A | 0.038Ohm | 2 N-Channel (Half Bridge) | 11200pF @ 25V | 45m Ω @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | Standard | |||||||||||||||||||||||||
| IXFN130N90SK | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | SOT-227-4, miniBLOC | 28 Weeks | 900V | 2 N-Channel (Dual) | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100H35FT3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm100h35ft3g-datasheets-0467.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | PIN/PEG | 25 | 390W | 4 | R-XUFM-P25 | 18 ns | 12ns | 40 ns | 155 ns | 22A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 88A | 4 N-Channel (H-Bridge) | 5200pF @ 25V | 420m Ω @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | Standard | |||||||||||||||||||||||||
| VKM40-06P1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-vkm4006p1-datasheets-0470.pdf | ECO-PAC2 | 6 | 12 Weeks | 15 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | 6 | NOT SPECIFIED | 4 | FET General Purpose Power | Not Qualified | R-XUFM-X6 | 38A | SILICON | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.07Ohm | 1800 mJ | 4 N-Channel (H-Bridge) | 70m Ω @ 25A, 10V | 5.5V @ 3mA | 220nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| APTM20AM10FTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm20am10ftg-datasheets-0471.pdf | SP4 | 12 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 694W | UPPER | UNSPECIFIED | 12 | 694W | 2 | 28 ns | 56ns | 99 ns | 81 ns | 175A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 700A | 2 N-Channel (Half Bridge) | 13700pF @ 25V | 12m Ω @ 87.5A, 10V | 5V @ 5mA | 224nC @ 10V | Standard | ||||||||||||||||||||||||||||
| APTM08TAM04PG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm08tam04pg-datasheets-0473.pdf | SP6 | 21 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 138W | UPPER | UNSPECIFIED | 21 | 138W | 6 | R-XUFM-X21 | 35 ns | 60ns | 65 ns | 100 ns | 120A | 30V | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 75V | 75V | METAL-OXIDE SEMICONDUCTOR | 250A | 0.0045Ohm | 1500 mJ | 6 N-Channel (3-Phase Bridge) | 4530pF @ 25V | 4.5m Ω @ 60A, 10V | 4V @ 1mA | 153nC @ 10V | Standard | ||||||||||||||||||||||||
| APTC80TA15PG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptc80ta15pg-datasheets-0475.pdf | SP6 | 21 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 277W | UPPER | UNSPECIFIED | NOT SPECIFIED | 21 | NOT SPECIFIED | 277W | 6 | FET General Purpose Power | Not Qualified | R-XUFM-X21 | 10 ns | 13ns | 35 ns | 83 ns | 28A | 30V | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | METAL-OXIDE SEMICONDUCTOR | 110A | 0.15Ohm | 6 N-Channel (3-Phase Bridge) | 4507pF @ 25V | 150m Ω @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | Standard | |||||||||||||||||||||
| APTC60DHM24T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptc60dhm24t3g-datasheets-0477.pdf | SP3 | 16 | 36 Weeks | 3 | IN PRODUCTION (Last Updated: 2 weeks ago) | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 462W | UPPER | UNSPECIFIED | 25 | 2 | FET General Purpose Power | R-XUFM-X16 | 21 ns | 30ns | 45 ns | 100 ns | 95A | 20V | SILICON | COMPLEX | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 1900 mJ | 2 N-Channel (Dual) Asymmetrical | 14400pF @ 25V | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | Super Junction | |||||||||||||||||||||||||||
| APTM20AM10STG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1999 | /files/microsemicorporation-aptm20am10stg-datasheets-0479.pdf | SP4 | 10 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 694W | UPPER | UNSPECIFIED | 10 | 694W | 2 | R-XUFM-X10 | 28 ns | 56ns | 99 ns | 81 ns | 175A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 700A | 2 N-Channel (Half Bridge) | 13700pF @ 25V | 12m Ω @ 87.5A, 10V | 5V @ 5mA | 224nC @ 10V | Standard | |||||||||||||||||||||||||||
| APTC60AM24T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptc60am24t1g-datasheets-0481.pdf | SP1 | Lead Free | 12 | 36 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 462W | UPPER | THROUGH-HOLE | 12 | 2 | FET General Purpose Power | 21 ns | 30ns | 45 ns | 100 ns | 95A | 20V | SILICON | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Half Bridge) | 14400pF @ 25V | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | Standard | ||||||||||||||||||||||||||||
| APTC60HM35T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptc60hm35t3g-datasheets-0454.pdf | SP3 | 73.4mm | 11.5mm | 40.8mm | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 416W | UPPER | UNSPECIFIED | 25 | 1 | Single | 416W | 4 | FET General Purpose Power | R-XUFM-X25 | 21 ns | 30ns | 84 ns | 283 ns | 72A | 20V | SILICON | ISOLATED | SWITCHING | 600V | METAL-OXIDE SEMICONDUCTOR | 200A | 600V | 4 N-Channel (H-Bridge) | 14000pF @ 25V | 35m Ω @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | Standard | ||||||||||||||||||||
| APTM20DUM08TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm20dum08tg-datasheets-0483.pdf | SP4 | 12 | 36 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE ENERGY RATED | No | e1 | TIN SILVER COPPER | 781W | UPPER | UNSPECIFIED | 12 | 781W | 2 | 32 ns | 64ns | 116 ns | 88 ns | 208A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 0.01Ohm | 3000 mJ | 2 N-Channel (Dual) | 14400pF @ 25V | 10m Ω @ 104A, 10V | 5V @ 5mA | 280nC @ 10V | Standard | ||||||||||||||||||||||||||
| APTC80H29SCTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptc80h29sctg-datasheets-0457.pdf | SP4 | 14 | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 156W | UPPER | UNSPECIFIED | 14 | 156W | 4 | 10 ns | 13ns | 35 ns | 83 ns | 15A | 30V | SILICON | ISOLATED | SWITCHING | 800V | 800V | METAL-OXIDE SEMICONDUCTOR | 60A | 0.29Ohm | 670 mJ | 4 N-Channel (H-Bridge) | 2254pF @ 25V | 290m Ω @ 7.5A, 10V | 3.9V @ 1mA | 91nC @ 10V | Standard |
