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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| APTC60AM45T1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptc60am45t1g-datasheets-0400.pdf | SP1 | 12 | 36 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 250W | UPPER | THROUGH-HOLE | 12 | 250W | 2 | FET General Purpose Power | 21 ns | 30ns | 45 ns | 100 ns | 49A | 20V | SILICON | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.045Ohm | 2 N-Channel (Half Bridge) | 7200pF @ 25V | 45m Ω @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||
| VHM40-06P1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-vhm4006p1-datasheets-0402.pdf | ECO-PAC2 | 6 | 12 Weeks | 12 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | 6 | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | R-XUFM-X6 | 38A | SILICON | COMPLEX | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.07Ohm | 1800 mJ | 2 N-Channel (Dual) | 70m Ω @ 25A, 10V | 5.5V @ 3mA | 220nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||
| APTM60A11FT1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2007 | /files/microsemicorporation-aptm60a11ft1g-datasheets-0403.pdf | SP1 | 36 Weeks | 1 | No | 390W | 390W | 2 | SP1 | 10.552nF | 75 ns | 85ns | 70 ns | 225 ns | 40A | 30V | 600V | 390W | 2 N-Channel (Half Bridge) | 10552pF @ 25V | 132mOhm @ 33A, 10V | 5V @ 2.5mA | 40A | 330nC @ 10V | Standard | 132 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| MKE38P600TLB | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | Non-RoHS Compliant | /files/ixys-mke38p600tlbtrr-datasheets-0392.pdf | 9-SMD Module | 32 Weeks | ISOPLUS-SMPD™.B | 600V | 50A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GWM180-004X2-SL | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-gwm180004x2smd-datasheets-0364.pdf | 17-SMD, Flat Leads | 17 | yes | EAR99 | DUAL | NOT SPECIFIED | NOT SPECIFIED | 6 | FET General Purpose Power | Not Qualified | R-XDFP-F17 | 180A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 0.0025Ohm | 6 N-Channel (3-Phase Bridge) | 2.5m Ω @ 100A, 10V | 4.5V @ 1mA | 110nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| ALD114913PAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD® | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald114913sal-datasheets-9220.pdf | 8-DIP (0.300, 7.62mm) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-PDIP | 2.5pF | 10 ns | 3mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 2 N-Channel (Dual) Matched Pair | 2.5pF @ 5V | 500Ohm @ 2.7V | 1.26V @ 1μA | 12mA 3mA | Depletion Mode | 500 Ω | ||||||||||||||||||||||||||||||||||||||||||||||
| ALD210802PCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2014 | /files/advancedlineardevicesinc-ald210802scl-datasheets-0196.pdf | 16-DIP (0.300, 7.62mm) | 8 Weeks | 1.025005g | 16 | 500mW | 4 | 16-PDIP | 10 ns | 10 ns | 80mA | 10.6V | 10.6V | 500mW | 25Ohm | 10V | 4 N-Channel, Matched Pair | 20mV @ 10μA | 80mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| MKE38P600TLB-TRR | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | /files/ixys-mke38p600tlbtrr-datasheets-0392.pdf | 9-SMD Module | 32 Weeks | ISOPLUS-SMPD™.B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTC120WX75GD-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | ISOPLUS-DIL™ | 28 Weeks | NOT SPECIFIED | NOT SPECIFIED | 75V | 6 N-Channel (3-Phase Bridge) | 10500pF @ 25V | 3.1m Ω @ 100A, 10V | 4V @ 1mA | 180A Tc | 178nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VMM45-02F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-vmm4502f-datasheets-0375.pdf | TO-240AA | 7 | 24 Weeks | 6 | yes | No | 190W | UPPER | UNSPECIFIED | VMM | 7 | Dual | 190W | 2 | FET General Purpose Power | R-PUFM-X7 | 45ns | 45 ns | 300 ns | 45A | 20V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 180A | 0.039Ohm | 200V | 2 N-Channel (Dual) | 7500pF @ 25V | 45m Ω @ 22.5A, 10V | 4V @ 4mA | 225nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| GWM100-0085X1-SMD SAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 17-SMD, Gull Wing | GWM100 | 85V | 6 N-Channel (3-Phase Bridge) | 6.2m Ω @ 75A, 10V | 4V @ 250μA | 103A | 114nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GMM3X160-0055X2-SMDSAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/ixys-gmm3x1600055x2smdsam-datasheets-0376.pdf | 24-SMD, Gull Wing | 150A | 55V | 6 N-Channel (3-Phase Bridge) | 4V @ 1mA | 110nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VMK165-007T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-vmk165007t-datasheets-0393.pdf | TO-240AA | Lead Free | 7 | 8 Weeks | 7 | yes | EAR99 | 390W | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | NOT SPECIFIED | 390W | 2 | FET General Purpose Power | Not Qualified | 280ns | 110 ns | 390 ns | 165A | 20V | SILICON | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 70V | METAL-OXIDE SEMICONDUCTOR | 660A | 0.006Ohm | 70V | 2 N-Channel (Dual) | 8800pF @ 25V | 7m Ω @ 82.5A, 10V | 4V @ 8mA | 480nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| GWM180-004X2-SMDSAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 17-SMD, Gull Wing | 180A | 40V | 6 N-Channel (3-Phase Bridge) | 2.5m Ω @ 100A, 10V | 4.5V @ 1mA | 110nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMIX2F60N50P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount | -55°C~150°C TJ | /files/ixys-mmix2f60n50p3-datasheets-0394.pdf | 24-SMD Module, 9 Leads | 30 Weeks | compliant | 500V | 320W | 2 N-Channel (Dual) | 6250pF @ 25V | 110m Ω @ 30A, 10V | 5V @ 4mA | 30A Tc | 96nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FMM22-06PF | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-fmm2206pf-datasheets-0377.pdf | i4-Pac™-5 | 5 | 30 Weeks | 5 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 130W | SINGLE | NOT SPECIFIED | FMM | 5 | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | 12A | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 130W | 66A | 1000 mJ | 2 N-Channel (Dual) | 3600pF @ 25V | 350m Ω @ 11A, 10V | 5V @ 1mA | 58nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||
| IXFN27N120SK | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | SOT-227-4, miniBLOC | 20 Weeks | 1200V 1.2kV | 2 N-Channel (Dual) | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FMM50-025TF | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-fmm50025tf-datasheets-0379.pdf | i4-Pac™-5 | 5 | 30 Weeks | 5 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 125W | SINGLE | NOT SPECIFIED | FMM | 5 | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | 30A | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | METAL-OXIDE SEMICONDUCTOR | 125W | 400 mJ | 2 N-Channel (Dual) | 4000pF @ 25V | 50m Ω @ 25A, 10V | 4.5V @ 250μA | 78nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||
| GMM3X160-0055X2-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-gmm3x1600055x2smdsam-datasheets-0376.pdf | 24-SMD, Gull Wing | 24 | EAR99 | Tin (984) Over Nickel (39) | DUAL | 24 | 6 | FET General Purpose Power | Not Qualified | R-PDSO-G24 | 150A | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 55V | 55V | METAL-OXIDE SEMICONDUCTOR | 0.0031Ohm | 6 N-Channel (3-Phase Bridge) | 4V @ 1mA | 110nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| MCB20P1200LB-TUB | IXYS | $71.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MCB20P1200LB | Surface Mount | 9-PowerSMD | 28 Weeks | 1200V | 4 N-Channel (Half Bridge) | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC80H15T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP1 | 12 | 36 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 277W | UPPER | UNSPECIFIED | 12 | 277W | 4 | FET General Purpose Power | 10 ns | 13ns | 35 ns | 83 ns | 28A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 800V | 800V | METAL-OXIDE SEMICONDUCTOR | 670 mJ | 4 N-Channel (H-Bridge) | 4507pF @ 25V | 150m Ω @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| APTM50DDA10T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50dda10t3g-datasheets-0383.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 312W | UPPER | UNSPECIFIED | 25 | 312W | 2 | 15 ns | 21ns | 52 ns | 73 ns | 37A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 140A | 1600 mJ | 2 N-Channel (Dual) | 4367pF @ 25V | 120m Ω @ 18.5A, 10V | 5V @ 1mA | 96nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| MCB20P1200LB-TRR | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MCB20P1200LB | Surface Mount | 9-PowerSMD | 28 Weeks | 1200V | 4 N-Channel (Half Bridge) | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM60H23FT1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/microsemicorporation-aptm60h23ft1g-datasheets-0386.pdf | SP1 | 12 | 36 Weeks | 1 | EAR99 | AVALANCHE RATED | No | 208W | UPPER | UNSPECIFIED | 12 | 208W | 4 | 37 ns | 43ns | 34 ns | 115 ns | 20A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.23Ohm | 4 N-Channel (H-Bridge) | 5316pF @ 25V | 276m Ω @ 17A, 10V | 5V @ 1mA | 165nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||
| LKK47-06C5 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-lkk4706c5-datasheets-0388.pdf | ISOPLUS264™ | Lead Free | 5 | 32 Weeks | 5 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 480W | 2 | FET General Purpose Power | Not Qualified | 20ns | 10 ns | 100 ns | 47A | 20V | SILICON | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | METAL-OXIDE SEMICONDUCTOR | 600V | 2 N-Channel (Dual) | 6800pF @ 100V | 45m Ω @ 44A, 10V | 3.9V @ 3mA | 190nC @ 10V | Super Junction | ||||||||||||||||||||||||||||||||||
| APTC80DDA15T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptc80dda15t3g-datasheets-0389.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 277W | UPPER | UNSPECIFIED | 25 | 277W | 2 | FET General Purpose Power | 10 ns | 13ns | 35 ns | 83 ns | 28A | 30V | SILICON | ISOLATED | SWITCHING | 800V | 800V | METAL-OXIDE SEMICONDUCTOR | 110A | 0.15Ohm | 670 mJ | 2 N-Channel (Dual) | 4507pF @ 25V | 150m Ω @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| GWM100-01X1-SLSAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/ixys-gwm10001x1sl-datasheets-5730.pdf | 17-SMD, Flat Leads | GWM100 | 90A | 100V | 6 N-Channel (3-Phase Bridge) | 8.5m Ω @ 80A, 10V | 4.5V @ 250μA | 90nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7911TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irfh7911trpbf-datasheets-0368.pdf | 18-PowerVQFN | 5.9944mm | 939.8μm | 5mm | Lead Free | 6 | 39 Weeks | No SVHC | 8.6MOhm | 18 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | 3.4W | QUAD | NO LEAD | 260 | IRFH7911PBF | Dual | 30 | 2.4W | 2 | FET General Purpose Power | Not Qualified | R-PQFP-N6 | 13A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.4W 3.4W | 100A | 30V | 2 N-Channel (Dual) | 1060pF @ 15V | 2.35 V | 8.6m Ω @ 12A, 10V | 2.35V @ 25μA | 13A 28A | 12nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||
| GWM100-01X1-SMDSAM | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/ixys-gwm10001x1sl-datasheets-5730.pdf | 17-SMD, Gull Wing | GWM100 | 90A | 100V | 6 N-Channel (3-Phase Bridge) | 8.5m Ω @ 80A, 10V | 4.5V @ 250μA | 90nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTI200WX75GD-SMD | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | ENHANCEMENT MODE | ISOPLUS-DIL™ | 24 | 28 Weeks | EAR99 | HIGH RELIABILITY | e3 | TIN OVER NICKEL | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 6 | R-PDSO-G24 | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 75V | 75V | METAL-OXIDE SEMICONDUCTOR | 255A | 0.0013Ohm | 6 N-Channel (3-Phase Bridge) | 14400pF @ 38V | 1.3m Ω @ 100A, 10V | 3.8V @ 275μA | 255A Tc | 155nC @ 10V | Standard |
