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ContactNVMFD5853NLWFT1G
Trans MOSFET N-CH 40V 34A 8-Pin DFN T/R
- Manufacturer: ON Semiconductor
- NO: 598-NVMFD5853NLWFT1G
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 3841
- Description: Trans MOSFET N-CH 40V 34A 8-Pin DFN T/R(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 4 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 3W |
| Terminal Form | FLAT |
| Pin Count | 8 |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PDSO-F6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 10m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Continuous Drain Current (ID) | 12A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 34A |
| Drain-source On Resistance-Max | 0.015Ohm |
| Pulsed Drain Current-Max (IDM) | 165A |
| DS Breakdown Voltage-Min | 40V |
| Avalanche Energy Rating (Eas) | 40 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
