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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| DMP57D5UV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/diodesincorporated-dmp57d5uv7-datasheets-5661.pdf | SOT-563, SOT-666 | 1.6mm | 600μm | 1.2mm | Lead Free | 6 | 3.005049mg | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 400mW | FLAT | 260 | DMP57D5UV | 6 | Dual | 40 | 400mW | 2 | Other Transistors | 160mA | 8V | SILICON | SWITCHING | 50V | METAL-OXIDE SEMICONDUCTOR | 6Ohm | -50V | 2 P-Channel (Dual) | 29pF @ 25V | 6 Ω @ 100mA, 4V | 1V @ 250μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| FDC6036P_F077 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/onsemiconductor-fdc6036p-datasheets-0552.pdf | 6-SSOT Flat-lead, SuperSOT™-6 FLMP | SuperSOT™-6 | 20V | 900mW | 2 P-Channel (Dual) | 992pF @ 10V | 44mOhm @ 5A, 4.5V | 1.5V @ 250μA | 5A | 14nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCF8304(TE85L,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SMD, Flat Lead | 8 | 530mW | VS-8 (2.9x1.5) | 600pF | 5.3ns | 8.4 ns | 3.2A | 20V | 30V | 330mW | 2 P-Channel (Dual) | 600pF @ 10V | 72mOhm @ 1.6A, 10V | 1.2V @ 1mA | 3.2A | 14nC @ 10V | Logic Level Gate | 72 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTLJD3181PZTBG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-ntljd3181pztbg-datasheets-5679.pdf | 6-WDFN Exposed Pad | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | 710mW | NO LEAD | NOT SPECIFIED | 6 | Dual | NOT SPECIFIED | 1.5W | 2 | Not Qualified | 9ns | 9 ns | 14 ns | 2.2A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 3.2A | 0.1Ohm | 20V | 2 P-Channel (Dual) | 450pF @ 10V | 100m Ω @ 2A, 4.5V | 1V @ 250μA | 7.8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| NTLJD3181PZTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-ntljd3181pztbg-datasheets-5679.pdf | 6-WDFN Exposed Pad | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | 710mW | NO LEAD | NOT SPECIFIED | 6 | Dual | NOT SPECIFIED | 1.5W | 2 | Not Qualified | 9ns | 9 ns | 14 ns | 2.2A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 3.2A | 0.1Ohm | 20V | 2 P-Channel (Dual) | 450pF @ 10V | 100m Ω @ 2A, 4.5V | 1V @ 250μA | 7.8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| FDD8424H_F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | TO-252-5, DPak (4 Leads + Tab), TO-252AD | compliant | NOT SPECIFIED | FDD8424 | NOT SPECIFIED | 40V | 1.3W | N and P-Channel | 1000pF @ 20V | 24m Ω @ 9A, 10V | 3V @ 250μA | 9A 6.5A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTLJD3183CZTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-ntljd3183cztag-datasheets-5693.pdf | 6-WDFN Exposed Pad | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | 710mW | NO LEAD | NOT SPECIFIED | 6 | Dual | NOT SPECIFIED | 1.5W | 2 | Not Qualified | 9ns | 12.5 ns | 14 ns | 2.2A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | -20V | N and P-Channel | 355pF @ 10V | 68m Ω @ 2A, 4.5V | 1V @ 250μA | 2.6A 2.2A | 7nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| BTS7904BATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | 2008 | /files/infineontechnologies-bts7904batma1-datasheets-5699.pdf | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | 5 | EAR99 | YES | SINGLE | GULL WING | 2 | R-PSSO-G5 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | N-CHANNEL AND P-CHANNEL | 55V 30V | 55V | METAL-OXIDE SEMICONDUCTOR | 69W 96W | 40A | 160A | 0.0202Ohm | 200 mJ | N and P-Channel | 6100pF @ 25V | 11.7m Ω @ 20A, 10V | 2.2V @ 40μA | 40A | 121nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCP8401(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2006 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SMD, Flat Lead | 20V 12V | 1W | N and P-Channel | 9.3pF @ 3V | 3 Ω @ 10mA, 4V | 1.1V @ 100μA | 100mA 5.5A | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UP04979G0L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2007 | /files/panasonicelectroniccomponents-up04979g0l-datasheets-5704.pdf | SOT-563, SOT-666 | 125mW | SSMini6-F2 | 100mA | 50V 30V | 125mW | N and P-Channel | 12Ohm @ 10mA, 4V | 1.5V @ 1μA | 100mA | Logic Level Gate | 12 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD75301W1015 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd75301w1015-datasheets-5664.pdf | 6-UFBGA, DSBGA | Lead Free | 6 | No SVHC | 6 | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 800mW | BOTTOM | BALL | 260 | CSD75301 | 6 | 800mW | 2 | Other Transistors | 3 ns | 1.7ns | 16 ns | 38 ns | 1.2A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -700mV | 0.19Ohm | 31 pF | 20V | 2 P-Channel (Dual) | 195pF @ 10V | -700 mV | 100m Ω @ 1A, 4.5V | 1V @ 250μA | 2.1nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| NTLJD3183CZTBG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-ntljd3183cztag-datasheets-5693.pdf | 6-WDFN Exposed Pad | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | 710mW | NO LEAD | NOT SPECIFIED | 6 | Dual | NOT SPECIFIED | 1.5W | 2 | Not Qualified | 9ns | 12.5 ns | 14 ns | 2.2A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 20V | N and P-Channel | 355pF @ 10V | 68m Ω @ 2A, 4.5V | 1V @ 250μA | 2.6A 2.2A | 7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| IRF8313PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf8313trpbf-datasheets-4692.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 6 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | IRF8313PBF | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 9.7A | 81A | 0.0155Ohm | 46 mJ | 2 N-Channel (Dual) | 760pF @ 15V | 15.5m Ω @ 9.7A, 10V | 2.35V @ 25μA | 9.7A | 90nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| GWM100-01X1-SL | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/ixys-gwm10001x1sl-datasheets-5730.pdf | 17-SMD, Flat Leads | Lead Free | 17 | 14 | EAR99 | DUAL | NOT SPECIFIED | GWM100 | 17 | NOT SPECIFIED | 6 | FET General Purpose Power | Not Qualified | R-PDSO-F17 | 290 ns | 90A | SILICON | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 0.0085Ohm | 100V | 6 N-Channel (3-Phase Bridge) | 8.5m Ω @ 80A, 10V | 4.5V @ 250μA | 90nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS8962C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2002 | /files/onsemiconductor-fds8962c-datasheets-5644.pdf | 7A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 187mg | 8 | yes | 900mW | 2W | 2 | 13ns | 9 ns | 14 ns | 5A | 20V | 30V | N and P-Channel | 575pF @ 15V | 30m Ω @ 7A, 10V | 3V @ 250μA | 7A 5A | 26nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7960DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7960dpt1e3-datasheets-4788.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 506.605978mg | 21mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.4W | C BEND | 260 | SI7960 | 8 | 2 | Dual | 30 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 12 ns | 12ns | 12 ns | 60 ns | 9.7A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 40A | 60V | 2 N-Channel (Dual) | 3 V | 21m Ω @ 9.7A, 10V | 3V @ 250μA | 6.2A | 75nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| IRF7751GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2009 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 1W | IRF7751GPBF | Dual | 1W | 2 | 8-TSSOP | 1.464nF | 4.5A | 20V | 30V | 1W | -30V | 2 P-Channel (Dual) | 1464pF @ 25V | 35mOhm @ 4.5A, 10V | 2.5V @ 250μA | 4.5A | 44nC @ 10V | Logic Level Gate | 35 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8212-H(TE12LQ,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2006 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8-SOP (5.5x6.0) | 30V | 450mW | 2 N-Channel (Dual) | 840pF @ 10V | 21mOhm @ 3A, 10V | 2.3V @ 1mA | 6A | 16nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7751TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | RoHS Compliant | 2006 | /files/infineontechnologies-irf7751trpbf-datasheets-5514.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | No SVHC | 8 | No | 1W | IRF7751PBF | Dual | 1W | 2 | 8-TSSOP | 1.464nF | 13 ns | 16ns | 80 ns | 155 ns | -4.5A | 20V | -30V | 30V | -2.5V | 1W | 35MOhm | -30V | 2 P-Channel (Dual) | 1464pF @ 25V | -2.5 V | 35mOhm @ 4.5A, 10V | 2.5V @ 250μA | 4.5A | 44nC @ 10V | Logic Level Gate | 35 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| SI7842DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7842dpt1e3-datasheets-4743.pdf | PowerPAK® SO-8 Dual | 6 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7842 | 8 | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 8 ns | 10ns | 10 ns | 21 ns | 10A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 6.3A | 30A | 0.022Ohm | 30V | 2 N-Channel (Dual) | 22m Ω @ 7.5A, 10V | 2.4V @ 250μA | 6.3A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SI6562DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si6562dqt1e3-datasheets-4653.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1W | GULL WING | 260 | SI6562 | 8 | Dual | 40 | 1W | 2 | Other Transistors | 30ns | 30 ns | 57 ns | 3.5A | 12V | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.0045A | 0.03Ohm | 20V | N and P-Channel | 30m Ω @ 4.5A, 4.5V | 600mV @ 250μA (Min) | 25nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SI6925ADQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6925adqt1e3-datasheets-4680.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | 800mW | GULL WING | 260 | SI6925 | 8 | Dual | 40 | 800mW | 2 | FET General Purpose Powers | 40 ns | 50ns | 50 ns | 20 ns | 3.9A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3.3A | 0.045Ohm | 20V | 2 N-Channel (Dual) | 1.8 V | 45m Ω @ 3.9A, 4.5V | 1.8V @ 250μA | 3.3A | 6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| APTM50DUM38TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/microsemicorporation-aptm50dum38tg-datasheets-5601.pdf | SP4 | 12 | 4 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 694W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 694W | 2 | FET General Purpose Power | Not Qualified | 90A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 360A | 2 N-Channel (Dual) | 11200pF @ 25V | 45m Ω @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| SI7844DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7844dpt1e3-datasheets-4755.pdf | PowerPAK® SO-8 Dual | 6 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7844 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 8 ns | 10ns | 10 ns | 21 ns | 10A | 20V | DRAIN | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 6.4A | 2 N-Channel (Dual) | 22m Ω @ 10A, 10V | 2.4V @ 250μA | 6.4A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SI4561DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4561dyt1ge3-datasheets-5537.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | unknown | 3.3W | GULL WING | SI4561 | 8 | Dual | 2W | 2 | Not Qualified | 79ns | 14 ns | 36 ns | 6.8A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3W 3.3W | 5.6A | 0.0355Ohm | 40V | N and P-Channel | 640pF @ 20V | 35.5m Ω @ 5A, 10V | 3V @ 250μA | 6.8A 7.2A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SI4952DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4952dyt1ge3-datasheets-5615.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | Unknown | 8 | EAR99 | No | e3 | PURE MATTE TIN | 1.8W | GULL WING | 260 | SI4952 | 8 | 2 | Dual | 30 | 1.8W | 2 | 15 ns | 50ns | 50 ns | 20 ns | 8A | 16V | SILICON | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | 2.2V | 2.8W | 8A | 30A | 25V | 2 N-Channel (Dual) | 680pF @ 13V | 2.2 V | 23m Ω @ 7A, 10V | 2.2V @ 250μA | 18nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| TPCP8203(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2007 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 360mW | 1.48W | 15ns | 9 ns | 4.7A | 20V | 40V | 40mOhm | 40V | 2 N-Channel (Dual) | 2.5V @ 1mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA914DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia914djt1e3-datasheets-4841.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | Unknown | 53mOhm | 6 | yes | EAR99 | No | 6.5W | 260 | SIA914 | 6 | Dual | 40 | 1.9W | 2 | 5 ns | 32ns | 53 ns | 30 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1V | 20V | 2 N-Channel (Dual) | 400pF @ 10V | 1 V | 53m Ω @ 3.7A, 4.5V | 1V @ 250μA | 11.5nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SIB911DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sib911dkt1e3-datasheets-4835.pdf | PowerPAK® SC-75-6L Dual | Lead Free | 6 | Unknown | 295mOhm | 6 | yes | EAR99 | No | 3.1W | 260 | SIB911 | 6 | Dual | 40 | 1.1W | 2 | Other Transistors | 12 ns | 45ns | 31 ns | 10 ns | -2.6A | 8V | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -1V | 1.5A | 20V | 2 P-Channel (Dual) | 115pF @ 10V | -1 V | 295m Ω @ 1.5A, 4.5V | 1V @ 250μA | 2.6A | 4nC @ 8V | Standard | |||||||||||||||||||||||||||||||||||||
| APTM50A15FT1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm50a15ft1g-datasheets-5557.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | 208W | UPPER | UNSPECIFIED | 12 | 208W | 2 | FET General Purpose Power | Not Qualified | 25A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Half Bridge) | 5448pF @ 25V | 180m Ω @ 21A, 10V | 5V @ 1mA | 170nC @ 10V | Standard |
