Products
Manufacturer
RFQ
NEWS
ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power - Max | JEDEC-95 Code | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF7307QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-irf7307qtrpbf-datasheets-5154.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | 8 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | No | 2W | DUAL | GULL WING | IRF7307QPBF | 2W | 2 | Other Transistors | 5.2A | 12V | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | MS-012AA | 21A | 0.05Ohm | N and P-Channel | 660pF @ 15V | 50m Ω @ 2.6A, 4.5V | 700mV @ 250μA | 5.2A 4.3A | 20nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||
| IRF7314QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2010 | /files/infineontechnologies-irf7314qtrpbf-datasheets-5150.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | No | 2.4W | IRF7314QPBF | 2.4W | 2 | 8-SO | 913pF | 18 ns | 26ns | 38 ns | 41 ns | -5.2A | 12V | 20V | 2.4W | 98mOhm | 2 P-Channel (Dual) | 913pF @ 15V | 58mOhm @ 5.2A, 4.5V | 700mV @ 250μA | 5.2A | 29nC @ 4.5V | Logic Level Gate | 58 mΩ | |||||||||||||||||||||||||||||||||||
| APTM120H57FT3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/microsemicorporation-aptm120h57ft3g-datasheets-5070.pdf | SP3 | 25 | 3 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | NOT SPECIFIED | 390W | 4 | FET General Purpose Power | Not Qualified | R-XUFM-X25 | 17A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 1200V 1.2kV | 1200V | METAL-OXIDE SEMICONDUCTOR | 68A | 4 N-Channel (H-Bridge) | 5155pF @ 25V | 684m Ω @ 8.5A, 10V | 5V @ 2.5mA | 187nC @ 10V | Standard | |||||||||||||||||||||||||||||||
| APTM10TDUM09PG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | SP6 | 21 | 22 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 21 | 390W | 6 | R-XUFM-X21 | 35 ns | 70ns | 125 ns | 95 ns | 139A | 30V | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 430A | 0.01Ohm | 3000 mJ | 6 N-Channel (3-Phase Bridge) | 9875pF @ 25V | 10m Ω @ 69.5A, 10V | 4V @ 2.5mA | 350nC @ 10V | Standard | |||||||||||||||||||||||||||
| APTM10DDAM19T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP3 | 25 | 22 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 208W | UPPER | UNSPECIFIED | 25 | 208W | 2 | 35 ns | 70ns | 125 ns | 95 ns | 70A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 1500 mJ | 2 N-Channel (Dual) | 5100pF @ 25V | 21m Ω @ 35A, 10V | 4V @ 1mA | 200nC @ 10V | Standard | ||||||||||||||||||||||||||||||
| FDS9933BZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2008 | /files/onsemiconductor-fds9933bz-datasheets-4923.pdf | 8-SOIC (0.154, 3.90mm Width) | 230.4mg | 8 | yes | 900mW | Dual | 1.6W | 2 | 9.3ns | 9.3 ns | 59 ns | 4.9A | 12V | 20V | 20V | 2 P-Channel (Dual) | 985pF @ 10V | 46m Ω @ 4.9A, 4.5V | 1.5V @ 250μA | 15nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| APTM120DDA57T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2006 | /files/microsemicorporation-aptm120dda57t3g-datasheets-5080.pdf | SP3 | 3 | No | 390W | 390W | 2 | SP3 | 5.155nF | 20 ns | 15ns | 45 ns | 160 ns | 17A | 30V | 1200V 1.2kV | 390W | 2 N-Channel (Dual) | 5155pF @ 25V | 684mOhm @ 8.5A, 10V | 5V @ 2.5mA | 17A | 187nC @ 10V | Standard | 684 mΩ | ||||||||||||||||||||||||||||||||||||||||
| APTM120DSK57T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm120dsk57t3g-datasheets-5082.pdf | SP3 | 25 | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 25 | 390W | 2 | 20 ns | 15ns | 45 ns | 160 ns | 17A | 30V | SILICON | ISOLATED | SWITCHING | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 68A | 0.648Ohm | 2 N-Channel (Dual) | 5155pF @ 25V | 684m Ω @ 8.5A, 10V | 5V @ 2.5mA | 187nC @ 10V | Standard | |||||||||||||||||||||||||||||||
| APTM120A65FT1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/microsemicorporation-aptm120a65ft1g-datasheets-5083.pdf | SP1 | 12 | 22 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 12 | 390W | 2 | FET General Purpose Power | 50 ns | 31ns | 48 ns | 170 ns | 16A | 30V | SILICON | ISOLATED | SWITCHING | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 0.78Ohm | 2 N-Channel (Half Bridge) | 7736pF @ 25V | 780m Ω @ 14A, 10V | 5V @ 2.5mA | 300nC @ 10V | Standard | ||||||||||||||||||||||||||||||
| APTM08TDUM04PG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/microsemicorporation-aptm08tdum04pg-datasheets-5086.pdf | SP6 | 21 | 6 | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 138W | UPPER | UNSPECIFIED | NOT SPECIFIED | 21 | NOT SPECIFIED | 138W | 6 | Not Qualified | R-XUFM-X21 | 120A | 30V | SILICON | 3 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 75V | 75V | METAL-OXIDE SEMICONDUCTOR | 250A | 0.0045Ohm | 1500 mJ | 6 N-Channel (3-Phase Bridge) | 4530pF @ 25V | 4.5m Ω @ 60A, 10V | 4V @ 1mA | 153nC @ 10V | Standard | |||||||||||||||||||||||||||||
| APTM10DUM05TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/microsemicorporation-aptm10dum05tg-datasheets-5088.pdf | SP4 | 4 | 4 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | 780W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 780W | 2 | FET General Purpose Power | Not Qualified | 278A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 1100A | 0.005Ohm | 3000 mJ | 2 N-Channel (Dual) | 20000pF @ 25V | 5m Ω @ 125A, 10V | 4V @ 5mA | 700nC @ 10V | Standard | ||||||||||||||||||||||||||||||
| APTM10HM09FTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/microsemicorporation-aptm10hm09ftg-datasheets-5090.pdf | SP4 | 14 | 4 | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | NOT SPECIFIED | 14 | NOT SPECIFIED | 390W | 4 | Not Qualified | 139A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 0.01Ohm | 3000 mJ | 4 N-Channel (H-Bridge) | 9875pF @ 25V | 10m Ω @ 69.5A, 10V | 4V @ 2.5mA | 350nC @ 10V | Standard | ||||||||||||||||||||||||||||||||
| APTM120DU29TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/microsemicorporation-aptm120du29tg-datasheets-5092.pdf | SP4 | 12 | 4 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 780W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 780W | 2 | FET General Purpose Power | Not Qualified | 34A | 30V | SILICON | ISOLATED | SWITCHING | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 136A | 3000 mJ | 2 N-Channel (Dual) | 10300pF @ 25V | 348m Ω @ 17A, 10V | 5V @ 5mA | 374nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| IRF7105QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7105qtrpbf-datasheets-5094.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | No | e3 | Matte Tin (Sn) | 2W | IRF7105QPBF | 2W | 2 | Other Transistors | 45 ns | 3.5A | 20V | N-CHANNEL AND P-CHANNEL | 25V | METAL-OXIDE SEMICONDUCTOR | N and P-Channel | 330pF @ 15V | 100m Ω @ 1A, 10V | 3V @ 250μA | 3.5A 2.3A | 27nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||
| APTM50AM19STG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2004 | /files/microsemicorporation-aptm50am19stg-datasheets-5100.pdf | SP4 | 4 | 1.25kW | SP4 | 22.4nF | 170A | 500V | 1250W | 2 N-Channel (Half Bridge) | 22400pF @ 25V | 19mOhm @ 85A, 10V | 5V @ 10mA | 170A | 492nC @ 10V | Silicon Carbide (SiC) | 19 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50DUM17G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP6 | 7 | 22 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 7 | 1.25kW | 2 | R-XUFM-X7 | 21 ns | 38ns | 93 ns | 75 ns | 180A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 1250W | 3000 mJ | 2 N-Channel (Dual) | 28000pF @ 25V | 20m Ω @ 90A, 10V | 5V @ 10mA | 560nC @ 10V | Standard | ||||||||||||||||||||||||||||
| APTM10TDUM19PG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm10tdum19pg-datasheets-5104.pdf | SP6 | 21 | 6 | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 208W | UPPER | UNSPECIFIED | NOT SPECIFIED | 21 | NOT SPECIFIED | 208W | 6 | Not Qualified | R-XUFM-X21 | 70A | 30V | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 300A | 0.021Ohm | 1500 mJ | 6 N-Channel (3-Phase Bridge) | 5100pF @ 25V | 21m Ω @ 35A, 10V | 4V @ 1mA | 200nC @ 10V | Standard | ||||||||||||||||||||||||||||||
| APTM50DUM19G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/microsemicorporation-aptm50dum19g-datasheets-5105.pdf | SP6 | 7 | 6 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 1.136kW | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | R-XUFM-X7 | 163A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 1136W | 2 N-Channel (Dual) | 22400pF @ 25V | 22.5m Ω @ 81.5A, 10V | 5V @ 10mA | 492nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| APTM100A12STG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/microsemicorporation-aptm100a12stg-datasheets-5032.pdf | SP3 | 9 | 3 | yes | AVALANCHE RATED | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | NOT SPECIFIED | 9 | NOT SPECIFIED | 2 | Not Qualified | R-XUFM-X9 | 68A | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 1250W | 270A | 0.12Ohm | 2500 mJ | 2 N-Channel (Half Bridge) | 17400pF @ 25V | 120m Ω @ 34A, 10V | 5V @ 10mA | 616nC @ 10V | Standard | |||||||||||||||||||||||||||||||
| APTC80H29T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/microsemicorporation-aptc80h29t1g-datasheets-5033.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 156W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 156W | 4 | FET General Purpose Power | Not Qualified | 15A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 800V | 800V | METAL-OXIDE SEMICONDUCTOR | 60A | 0.29Ohm | 670 mJ | 4 N-Channel (H-Bridge) | 2254pF @ 25V | 290m Ω @ 7.5A, 10V | 3.9V @ 1mA | 90nC @ 10V | Standard | ||||||||||||||||||||||||||||||
| APTM100DDA35T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP3 | 25 | 22 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 25 | 390W | 2 | 18 ns | 12ns | 40 ns | 155 ns | 22A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 88A | 2 N-Channel (Dual) | 5200pF @ 25V | 420m Ω @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | Standard | ||||||||||||||||||||||||||||||
| APTM100H80FT1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/microsemicorporation-aptm100h80ft1g-datasheets-5040.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 208W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 208W | 4 | FET General Purpose Power | Not Qualified | 11A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 1000V 1kV | METAL-OXIDE SEMICONDUCTOR | 68A | 0.96Ohm | 4 N-Channel (H-Bridge) | 3876pF @ 25V | 960m Ω @ 9A, 10V | 5V @ 1mA | 150nC @ 10V | Standard | ||||||||||||||||||||||||||||||||
| APTC60AM70T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/microsemicorporation-aptc60am70t1g-datasheets-5042.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 250W | UPPER | THROUGH-HOLE | NOT SPECIFIED | 12 | NOT SPECIFIED | 250W | 2 | FET General Purpose Power | Not Qualified | 39A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.07Ohm | 2 N-Channel (Half Bridge) | 7000pF @ 25V | 70m Ω @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| APTM100DU18TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/microsemicorporation-aptm100du18tg-datasheets-5044.pdf | SP4 | 12 | 4 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 780W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 780W | 2 | FET General Purpose Power | Not Qualified | 43A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 3000 mJ | 2 N-Channel (Dual) | 10400pF @ 25V | 210m Ω @ 21.5A, 10V | 5V @ 5mA | 372nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| APTC60DSKM70T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptc60dskm70t3g-datasheets-5046.pdf | SP3 | 25 | 3 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 250W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | NOT SPECIFIED | 250W | 2 | FET General Purpose Power | Not Qualified | 39A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 160A | 0.07Ohm | 1800 mJ | 2 N-Channel (Dual) | 7000pF @ 25V | 70m Ω @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | Standard | |||||||||||||||||||||||||||||||
| APTC60DDAM70T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptc60ddam70t3g-datasheets-5048.pdf | SP3 | 25 | 3 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 250W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | NOT SPECIFIED | 250W | 2 | FET General Purpose Power | Not Qualified | 39A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 160A | 0.07Ohm | 1800 mJ | 2 N-Channel (Dual) | 7000pF @ 25V | 70m Ω @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | Standard | |||||||||||||||||||||||||||||||
| APTM100A40FT1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP1 | 12 | 1 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 12 | 390W | 2 | FET General Purpose Power | 44 ns | 40ns | 38 ns | 150 ns | 21A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | METAL-OXIDE SEMICONDUCTOR | 0.48Ohm | 2 N-Channel (Half Bridge) | 7868pF @ 25V | 480m Ω @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | Standard | ||||||||||||||||||||||||||||||||
| APTC80DSK29T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/microsemicorporation-aptc80dsk29t3g-datasheets-5053.pdf | SP3 | 25 | 3 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 156W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | NOT SPECIFIED | 156W | 2 | Not Qualified | 15A | 30V | SILICON | ISOLATED | SWITCHING | 800V | 800V | METAL-OXIDE SEMICONDUCTOR | 60A | 670 mJ | 2 N-Channel (Dual) | 2254pF @ 25V | 290m Ω @ 7.5A, 10V | 3.9V @ 1mA | 90nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| APTM10DHM09TG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm10dhm09tg-datasheets-5057.pdf | SP4 | 14 | 4 | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | NOT SPECIFIED | 14 | NOT SPECIFIED | 390W | 2 | Not Qualified | 139A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 0.01Ohm | 3000 mJ | 2 N-Channel (Dual) Asymmetrical | 9875pF @ 25V | 10m Ω @ 69.5A, 10V | 4V @ 2.5mA | 350nC @ 10V | Standard | ||||||||||||||||||||||||||||||||
| AON5802A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2007 | /files/alphaomegasemiconductorinc-aon5802a-datasheets-5001.pdf | 6-SMD, Flat Lead Exposed Pad | 1.7W | 7.2A | 30V | 1.7W | 2 N-Channel (Dual) Common Drain | 1115pF @ 15V | 20m Ω @ 7.2A, 4.5V | 1.5V @ 250μA | 10.7nC @ 4.5V | Logic Level Gate |
