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IRF7750TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7750TRPBF
- Package: 8-TSSOP (0.173, 4.40mm Width)
- Datasheet:
- Stock: 4743
- Description: IRF7750TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173, 4.40mm Width) |
| Number of Pins | 8 |
| Supplier Device Package | 8-TSSOP |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | SMD/SMT |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Base Part Number | IRF7750PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Power Dissipation | 1W |
| Turn On Delay Time | 15 ns |
| Power - Max | 1W |
| FET Type | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.7A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 5V |
| Rise Time | 54ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 210 ns |
| Turn-Off Delay Time | 180 ns |
| Continuous Drain Current (ID) | 4.7A |
| Threshold Voltage | -1.2V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | -20V |
| Dual Supply Voltage | -20V |
| Input Capacitance | 1.7nF |
| FET Feature | Logic Level Gate |
| Drain to Source Resistance | 55mOhm |
| Rds On Max | 30 mΩ |
| Nominal Vgs | -1.2 V |
| Height | 1.0414mm |
| Length | 3.0988mm |
| Width | 4.4958mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
IRF7750TRPBF Description
International Rectifier's HEXFET Power MOSFET uses advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with the well-known rugged equipment design of International Rectifier, provides designers with extremely efficient and reliable equipment for battery and load management. Compared with the standard SO-8, the footprint of the TSSOP-8 package is reduced by 45%. This makes the TSSOP-8 an ideal device for space-constrained applications on printed circuit boards. The ultra-thin shape (< 1.1 mm) makes it easy to install in extremely thin environments, such as portable electronics and PCMCIA cards.
IRF7750TRPBF Features
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile ( < 1.1mm)
Available in Tape & Reel
Lead-Free
IRF7750TRPBF Applications
space-constrained applications on printed circuit boards
