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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| IRFH4255DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | /files/infineontechnologies-irfh4255dtrpbf-datasheets-6293.pdf | 8-PowerVDFN | 6mm | 900μm | 5mm | Lead Free | No SVHC | 8 | EAR99 | Tin | No | 38W | IRFH4255 | Dual | 2 | 30A | 20V | 25V | 1.6V | 31W 38W | 2 N-Channel (Dual) | 1314pF @ 13V | 3.2m Ω @ 30A, 10V | 2.1V @ 35μA | 64A 105A | 15nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QJD1210010 | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~175°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2014 | /files/powerexinc-qjd1210010-datasheets-6368.pdf | Module | unknown | 1.08kW | 100A | 1200V 1.2kV | 1080W | 2 N-Channel (Dual) | 10200pF @ 800V | 25m Ω @ 100A, 20V | 5V @ 10mA | 100A Tc | 500nC @ 20V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CTLDM303N-M832DS TR | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | 2014 | /files/centralsemiconductorcorp-ctldm303nm832dstr-datasheets-6336.pdf | 8-TDFN Exposed Pad | 8 | 6 Weeks | EAR99 | compliant | 8541.29.00.95 | YES | NO LEAD | 2 | R-PDSO-N8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.65W | 3.6A | 0.078Ohm | 2 N-Channel (Dual) | 590pF @ 10V | 40m Ω @ 1.8A, 4.5V | 1.2V @ 250μA | 3.6A | 13nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ECH8667-TL-HX | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 8-SMD, Flat Lead | 8 Weeks | 8 | -5.5A | -30V | 39mOhm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ECH8653-S-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | 8-SMD, Flat Lead | 8 | 2 | 7.5A | 20V | 20mOhm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EFC6601R-A-TR | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | 6-XFBGA, FCBGA | Lead Free | 4 Weeks | 68.407399mg | 6 | Halogen Free | 2W | Dual | 280 ns | 630ns | 47 μs | 53 μs | 13A | 12V | 24V | 11.5mOhm | 2 N-Channel (Dual) Common Drain | 48nC @ 4.5V | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ECH8660-S-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | 8-SMD, Flat Lead | 11 Weeks | 8 | 2 | 4.5A | 30V | 59mOhm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5489NLWFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5489nlt1g-datasheets-1954.pdf | 8-PowerTDFN | Lead Free | 13 Weeks | 37.393021mg | 8 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | 3W | 8 | 2 | Dual | FET General Purpose Power | 7 ns | 11ns | 21 ns | 31 ns | 12A | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 330pF @ 25V | 65m Ω @ 15A, 10V | 2.5V @ 250μA | 4.5A | 12.4nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| QJD1210SA2 | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/powerexinc-qjd1210sa2-datasheets-6346.pdf | Module | unknown | 415W | 100A | 1200V 1.2kV | 415W | 2 N-Channel (Dual) | 8200pF @ 10V | 17m Ω @ 100A, 15V | 1.6V @ 34mA | 330nC @ 15V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5485NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfd5485nlt1g-datasheets-9824.pdf | 8-PowerTDFN | Lead Free | 6 Weeks | 8 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 2.9W | 8 | Dual | 2.9W | 2 | 9.5 ns | 26.6ns | 23.7 ns | 27.8 ns | 5.3A | 20V | 60V | 2 N-Channel (Dual) | 560pF @ 25V | 44m Ω @ 15A, 10V | 2.5V @ 250μA | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EMH2407-S-TL-HX | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2016 | 8-SMD, Flat Lead | 8 | No | 310 ns | 1.02μs | 2.25 μs | 3 μs | 6A | 12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHN210T,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/nexperiausainc-phn210t118-datasheets-6170.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.45mm | 4mm | Lead Free | 8 | 16 Weeks | No SVHC | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | 2W | GULL WING | 260 | 8 | Dual | 30 | 2W | 2 | FET General Purpose Power | 6 ns | 8ns | 15 ns | 21 ns | 2.4A | 20V | 30V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2V | MS-012AA | 3.4A | 14A | 0.1Ohm | 13 mJ | 30V | 2 N-Channel (Dual) | 250pF @ 20V | 2 V | 100m Ω @ 2.2A, 10V | 2.8V @ 1mA | 6nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SIZ914DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-siz914dtt1ge3-datasheets-6251.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 6 | 13 Weeks | 8 | EAR99 | unknown | 100W | NO LEAD | SIZ914 | 2 | Dual | 2 | R-PDSO-N6 | 40 ns | 127ns | 19 ns | 40 ns | 40A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 22.7W 100W | 16A | 0.0064Ohm | 5 mJ | 30V | 2 N-Channel (Half Bridge) | 1208pF @ 15V | 6.4m Ω @ 19A, 10V | 2.4V @ 250μA | 16A 40A | 26nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| FDS6912 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fds6912-datasheets-6276.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 187mg | No SVHC | 28MOhm | 8 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 900mW | GULL WING | Dual | 2W | 2 | FET General Purpose Power | 8 ns | 13ns | 8 ns | 18 ns | 6A | 25V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2V | 6A | 30V | 2 N-Channel (Dual) | 740pF @ 15V | 2 V | 28m Ω @ 6A, 10V | 3V @ 250μA | 10nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| FDSS2407 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.575mm | 3.9mm | 8 | 5 Weeks | 230.4mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | 2.27W | GULL WING | FDSS2407 | Dual | 2.27W | 2 | FET General Purpose Power | 630 ns | 1.2μs | 3.5 μs | 8.7 μs | 3.3A | 20V | SILICON | SWITCHING | 62V | METAL-OXIDE SEMICONDUCTOR | 3A | 0.11Ohm | 140 mJ | 62V | 2 N-Channel (Dual) | 300pF @ 15V | 110m Ω @ 3.3A, 10V | 3V @ 250μA | 4.3nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI7270DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7270dpt1ge3-datasheets-6137.pdf | PowerPAK® SO-8 Dual | 6 | 13 Weeks | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 17.8W | C BEND | 260 | 8 | Dual | 30 | 3.6W | 2 | FET General Purpose Power | R-PDSO-C6 | 10 ns | 8ns | 8 ns | 18 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.2V | 8A | 35A | 30V | 2 N-Channel (Dual) | 900pF @ 15V | 21m Ω @ 8A, 10V | 2.8V @ 250μA | 21nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| VQ2001P | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-vq2001p-datasheets-6139.pdf | PDIP | 13 Weeks | 1.200007g | 14 | No | 2W | 4 | 2W | 4 | 150pF | 600mA | 20V | 30V | 2W | 2Ohm | 30V | 4 P-Channel | 150pF @ 15V | 2Ohm @ 1A, 12V | 4.5V @ 1mA | 600mA | Standard | 2 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ3001P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-vq3001pe3-datasheets-6145.pdf | 15 Weeks | 14 | No | 2W | 2W | 4 | 110pF | 600mA | 20V | 30V | 2W | 2 N and 2 P-Channel | 110pF @ 15V | 1Ohm @ 1A, 12V | 2.5V @ 1mA | 850mA 600mA | Standard | 1 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS4559-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fds4559f085-datasheets-6147.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 230.4mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | No | 2W | DUAL | GULL WING | 2W | 2 | Other Transistors | 10ns | 12 ns | 19 ns | 3.5A | 20V | SILICON | SWITCHING | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 4.5A | 0.055Ohm | 60V | N and P-Channel | 650pF @ 25V | 55m Ω @ 4.5A, 10V | 3V @ 250μA | 4.5A 3.5A | 18nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1006P | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-vq1006p2-datasheets-6115.pdf | PDIP | 13 Weeks | 1.200007g | 14 | no | No | e0 | Tin/Lead (Sn/Pb) | 2W | 14 | 4 | 2W | FET General Purpose Power | 14-DIP | 400mA | 20V | 90V | METAL-OXIDE SEMICONDUCTOR | 90V | 4 N-Channel | 60pF @ 25V | 4.5 Ω @ 1A, 10V | 2.5V @ 1mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHC2300,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/nexperiausainc-phc2300118-datasheets-6163.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | 8 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | DUAL | GULL WING | 260 | 8 | 30 | 1.6W | 2 | Other Transistors | Not Qualified | 340mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 300V | 300V | METAL-OXIDE SEMICONDUCTOR | MS-012AA | 0.34A | 6Ohm | N and P-Channel | 102pF @ 50V | 6 Ω @ 170mA, 10V | 2V @ 1mA | 340mA 235mA | 6.24nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1001P | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 2004 | /files/vishaysiliconix-vq1001p2-datasheets-6118.pdf | CDIP | 15 Weeks | 1.200007g | 14 | No | 2W | 4 | 1.3W | 14-DIP | 110pF | 830mA | 20V | 30V | 2W | 1Ohm | 30V | 4 N-Channel | 110pF @ 15V | 1.75Ohm @ 200mA, 5V | 2.5V @ 1mA | 830mA | Logic Level Gate | 1.75 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ962EP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sqj962ept1ge3-datasheets-6203.pdf | PowerPAK® SO-8 Dual | Lead Free | 4 | Unknown | 60mOhm | 8 | yes | EAR99 | No | 25W | SINGLE | GULL WING | 260 | 8 | 2 | Dual | 40 | 2 | FET General Purpose Power | R-PSSO-G4 | 5 ns | 11ns | 6 ns | 16 ns | 8A | 20V | SILICON | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2V | 8A | 5 mJ | 2 N-Channel (Dual) | 475pF @ 25V | 60m Ω @ 4.3A, 10V | 2.5V @ 250μA | 14nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SIA915DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia915djt1ge3-datasheets-6219.pdf | PowerPAK® SC-70-6 Dual | 6 | 12 Weeks | 28.009329mg | Unknown | 6 | EAR99 | No | 6.5W | 6 | 2 | Dual | 1.9W | 2 | Other Transistors | 35 ns | 25ns | 10 ns | 15 ns | 3.7A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | -1V | 4.5A | 0.087Ohm | 2 P-Channel (Dual) | 275pF @ 15V | -1 V | 87m Ω @ 2.9A, 10V | 2.2V @ 250μA | 4.5A | 9nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| IRF3575DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 2 (1 Year) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf3575dtrpbf-datasheets-6222.pdf | 32-PowerWFQFN | 15 Weeks | EAR99 | YES | 150°C | FET General Purpose Power | 25V | METAL-OXIDE SEMICONDUCTOR | 303A | 2 N-Channel (Dual) | 303A Tc | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ2001P-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-vq2001p-datasheets-6139.pdf | 14-DIP | 14 | 14 | no | EAR99 | No | e0 | TIN LEAD | 2W | DUAL | 2W | 4 | 600mA | 20V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 0.6A | 2A | 2Ohm | 60 pF | 4 P-Channel | 150pF @ 15V | 30ns | 30ns | 2 Ω @ 1A, 12V | 4.5V @ 1mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMGD130UN,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/nxpusainc-pmgd130un115-datasheets-6097.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 20V | 390mW | 2 N-Channel (Dual) | 83pF @ 10V | 145m Ω @ 1.2A, 4.5V | 1V @ 250μA | 1.2A | 1.3nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMDPB70EN,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/nexperiausainc-pmdpb70en115-datasheets-6095.pdf | 6-UDFN Exposed Pad | 6 | No | 510mW | 6 | Dual | 1.165W | 2 | 3 ns | 16ns | 5 ns | 15 ns | 3.5A | 20V | 30V | 510mW | 30V | 2 N-Channel (Dual) | 130pF @ 15V | 57m Ω @ 3.5A, 10V | 2.5V @ 250μA | 4.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4952 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | 8 | 2W | FET General Purpose Power | 11A | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 2 N-Channel (Dual) | 605pF @ 15V | 10.5m Ω @ 11A, 10V | 2.5V @ 250μA | 15nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1001P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-vq1001p2-datasheets-6118.pdf | Lead Free | 14 | No | 2W | 2W | 4 | 14-DIP | 110pF | 830mA | 20V | 30V | 2W | 1.75Ohm | 4 N-Channel | 110pF @ 15V | 1.75Ohm @ 200mA, 5V | 2.5V @ 1mA | 830mA | Logic Level Gate | 1.75 Ω |
