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ContactSIZ914DT-T1-GE3
MOSFET 2N-CH 30V 16A PWRPAIR
- Manufacturer: Vishay Siliconix
- NO: 880-SIZ914DT-T1-GE3
- Package: 8-PowerWDFN
- Datasheet:
- Stock: 8992
- Description: MOSFET 2N-CH 30V 16A PWRPAIR(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 100W |
| Terminal Form | NO LEAD |
| Reach Compliance Code | unknown |
| Base Part Number | SIZ914 |
| JESD-30 Code | R-PDSO-N6 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN SOURCE |
| Turn On Delay Time | 40 ns |
| Power - Max | 22.7W 100W |
| FET Type | 2 N-Channel (Half Bridge) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.4m Ω @ 19A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1208pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 16A 40A |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| Rise Time | 127ns |
| Fall Time (Typ) | 19 ns |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 40A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 16A |
| Drain-source On Resistance-Max | 0.0064Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Avalanche Energy Rating (Eas) | 5 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 750μm |
| Length | 6mm |
| Width | 5mm |
| RoHS Status | ROHS3 Compliant |
