Products
Manufacturer
RFQ
NEWS
ContactFDSS2407
FDSS2407 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDSS2407
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 6127
- Description: FDSS2407 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 4.3nC @ 5V |
| Rise Time | 1.2μs |
| Drain to Source Voltage (Vdss) | 62V |
| Fall Time (Typ) | 3.5 μs |
| Turn-Off Delay Time | 8.7 μs |
| Continuous Drain Current (ID) | 3.3A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 3A |
| Drain-source On Resistance-Max | 0.11Ohm |
| Drain to Source Breakdown Voltage | 62V |
| Avalanche Energy Rating (Eas) | 140 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 1.575mm |
| Length | 4.9mm |
| Width | 3.9mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 230.4mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | Automotive, AEC-Q101, PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 2.27W |
| Terminal Form | GULL WING |
| Base Part Number | FDSS2407 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.27W |
| Turn On Delay Time | 630 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 110m Ω @ 3.3A, 10V |
FDSS2407 Description
Compared with the traditional power MOSFET, this dual N-channel MOSFET provides additional functions. They are Drain-to-source voltage feedback signal, and Two.Previously, the gate driver of the external discrete circuit was required to disable the control function.
Including these features in MOSFET saves space on printed circuit boards. As long as the drain-to-source voltage is higher than 62V, the drain-to-source voltage feedback function can provide 5V level output. This can monitor the time it takes for a perceptual load to deplete its stored energy. A plurality of feedback signals can be connected to one input of the monitoring circuit.
The gate disable function allows the device to be turned off independent of the drive signal on the gate. This function allows the second control circuit to deactivate the load if necessary. It can also be connected to "OR", allowing multiple devices to be controlled by a single open collector / drain control transistor.
FDSS2407 Features
62V, 132m, 5V Logic Level Gate Dual MOSFET in SO-8
5V Logic Level feedback signal of the drain to sourcevoltage
Multiple devices can be wired "OR'd" to a single monitoring circuit input
Gate Drive Disable Input
Multiple devices controllable bya single disable transistor
Qualified to AEC Q101
FDSS2407 Applications
Power Train
Automotive Injector Driver
Solenoid Driver
