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NEXPERIA - PHC2300,118 - Dual MOSFET, N and P Channel, 170 mA, 300 V, 6 ohm, 10 V, 2 V
- Manufacturer: Nexperia USA Inc.
- NO: 554-PHC2300,118
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 3606
- Description: NEXPERIA - PHC2300,118 - Dual MOSFET, N and P Channel, 170 mA, 300 V, 6 ohm, 10 V, 2 V(Kg)
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In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e4 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | Other Transistors |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.6W |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6 Ω @ 170mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 102pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 340mA 235mA |
| Gate Charge (Qg) (Max) @ Vgs | 6.24nC @ 10V |
| Drain to Source Voltage (Vdss) | 300V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Continuous Drain Current (ID) | 340mA |
| JEDEC-95 Code | MS-012AA |
| Drain Current-Max (Abs) (ID) | 0.34A |
| Drain-source On Resistance-Max | 6Ohm |
| DS Breakdown Voltage-Min | 300V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | RoHS Compliant |
