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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| APTML202UM18R010T3AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | SP3 | 10 | 22 Weeks | 3 | EAR99 | No | 480W | UPPER | UNSPECIFIED | 25 | 480W | 2 | FET General Purpose Power | R-XUFM-X10 | 109A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 400A | 0.019Ohm | 2 N-Channel (Dual) | 9880pF @ 25V | 19m Ω @ 50A, 10V | 4V @ 2.5mA | 109A Tc | Standard | ||||||||||||||||||||||||||||||||||||||
| APTM10DHM09T3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | SP3 | 3 | EAR99 | No | 390W | 390W | 2 | FET General Purpose Power | 35 ns | 70ns | 125 ns | 95 ns | 139A | 30V | 100V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) Asymmetrical | 9875pF @ 25V | 10m Ω @ 69.5A, 10V | 4V @ 2.5mA | 350nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| APTC60AM83B1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | RoHS Compliant | 2016 | SP1 | 22 Weeks | 1 | EAR99 | No | 250W | 250W | 3 | Other Transistors | 21 ns | 30ns | 32 ns | 240 ns | 36A | 20V | 600V | METAL-OXIDE SEMICONDUCTOR | 49A | 3 N Channel (Phase Leg + Boost Chopper) | 7200pF @ 25V | 83m Ω @ 24.5A, 10V | 5V @ 3mA | 250nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||||||||||||
| APTM120VDA57T3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | SP3 | 20 | 3 | EAR99 | AVALANCHE RATED | No | 390W | UPPER | UNSPECIFIED | 25 | 390W | 2 | FET General Purpose Power | 20 ns | 15ns | 45 ns | 160 ns | 17A | 30V | SILICON | ISOLATED | SWITCHING | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 68A | 0.684Ohm | 2 N-Channel (Dual) | 5155pF @ 25V | 684m Ω @ 8.5A, 10V | 5V @ 2.5mA | 187nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||
| SSM6L11TU(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-SMD, Flat Leads | 6 | unknown | 500mW | 2 | Dual | Other Transistors | 16 ns | 15 ns | 500mA | -1.1V | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 0.5A | N and P-Channel | 268pF @ 10V | 145m Ω @ 250MA, 4V | 1.1V @ 100μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| APTC90AM602G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptc90am602g-datasheets-5946.pdf | SP2 | 22 Weeks | 2 | EAR99 | No | 462W | 1 | FET General Purpose Power | 70 ns | 20ns | 25 ns | 400 ns | 59A | 20V | 900V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Half Bridge) | 13600pF @ 100V | 60m Ω @ 52A, 10V | 3.5V @ 6mA | 540nC @ 10V | Super Junction | ||||||||||||||||||||||||||||||||||||||||||||
| ALD111910MAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | RoHS Compliant | 10 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC90DSK12T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptc90dsk12t1g-datasheets-5948.pdf | SP1 | 10 | 1 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 250W | UPPER | UNSPECIFIED | 12 | 250W | 2 | FET General Purpose Power | 70 ns | 20ns | 25 ns | 400 ns | 30A | 20V | SILICON | ISOLATED | SWITCHING | 900V | 900V | METAL-OXIDE SEMICONDUCTOR | 75A | 2 N Channel (Dual Buck Chopper) | 6800pF @ 100V | 120m Ω @ 26A, 10V | 3.5V @ 3mA | 270nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||
| APTM20DHM16T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | SP3 | 22 Weeks | 3 | EAR99 | No | 390W | 390W | 2 | FET General Purpose Power | 32 ns | 64ns | 116 ns | 88 ns | 104A | 30V | 200V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) Asymmetrical | 7220pF @ 25V | 19m Ω @ 52A, 10V | 5V @ 2.5mA | 140nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||
| APTC60AM42F2G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptc60am42f2g-datasheets-5951.pdf | SP2 | 2 | EAR99 | No | 416W | 416W | 1 | FET General Purpose Power | 21 ns | 30ns | 52 ns | 240 ns | 66A | 20V | 600V | METAL-OXIDE SEMICONDUCTOR | 2 N Channel (Phase Leg) | 14600pF @ 25V | 42m Ω @ 33A, 10V | 5V @ 6mA | 510nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||||||||||||||
| APTC60AM83BC1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | RoHS Compliant | 2012 | SP1 | 22 Weeks | 1 | EAR99 | No | 250W | 250W | 3 | Other Transistors | 21 ns | 30ns | 45 ns | 100 ns | 36A | 20V | 600V | METAL-OXIDE SEMICONDUCTOR | 49A | 3 N Channel (Phase Leg + Boost Chopper) | 7200pF @ 25V | 83m Ω @ 24.5A, 10V | 5V @ 3mA | 250nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N7334 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/597 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv2n7334-datasheets-5954.pdf | 14-DIP (0.300, 7.62mm) | 14 | EAR99 | HIGH RELIABILITY | 8541.29.00.75 | MIL-19500/597 | 1.4W | DUAL | NOT SPECIFIED | 14 | NOT SPECIFIED | 4 | Qualified | R-CDIP-T14 | 1A | SILICON | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 1.4W | MO-036AB | 1A | 4A | 0.8Ohm | 75 mJ | 4 N-Channel | 700m Ω @ 600mA, 10V | 4V @ 250μA | 60nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| APTC60DSKM45T1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | RoHS Compliant | 2012 | SP1 | 22 Weeks | 1 | EAR99 | No | 250W | 250W | 2 | FET General Purpose Power | 21 ns | 30ns | 45 ns | 100 ns | 49A | 20V | 600V | METAL-OXIDE SEMICONDUCTOR | 2 N Channel (Dual Buck Chopper) | 7200pF @ 25V | 45m Ω @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | Super Junction | ||||||||||||||||||||||||||||||||||||||||||||
| APTC90H12SCTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-aptc90h12sctg-datasheets-5962.pdf | SP4 | 14 | 4 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 250W | UPPER | UNSPECIFIED | 14 | 250W | 4 | Not Qualified | 30A | 20V | SILICON | ISOLATED | SWITCHING | 900V | 900V | METAL-OXIDE SEMICONDUCTOR | 75A | 0.12Ohm | 4 N-Channel (H-Bridge) | 6800pF @ 100V | 120m Ω @ 26A, 10V | 3.5V @ 3mA | 270nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||||||
| APTC60DSKM45CT1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | SP1 | 10 | 1 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 250W | UPPER | UNSPECIFIED | 12 | 250W | 2 | FET General Purpose Power | 21 ns | 30ns | 45 ns | 100 ns | 49A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.045Ohm | 2 N-Channel (Dual) | 7200pF @ 25V | 45m Ω @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||||
| JAN2N7335 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/599 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan2n7335-datasheets-5965.pdf | 14-DIP (0.300, 7.62mm) | 1.4W | Qualified | 750mA | 100V | 1.4W | 4 P-Channel | 1.4 Ω @ 500mA, 10V | 4V @ 250μA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC90DDA12T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptc90dda12t1g-datasheets-5939.pdf | SP1 | 10 | 1 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 250W | UPPER | UNSPECIFIED | 12 | 250W | 2 | FET General Purpose Power | 70 ns | 20ns | 25 ns | 400 ns | 30A | 20V | SILICON | COMPLEX | ISOLATED | SWITCHING | 900V | 900V | METAL-OXIDE SEMICONDUCTOR | 75A | 2 N Channel (Dual Buck Chopper) | 6800pF @ 100V | 120m Ω @ 26A, 10V | 3.5V @ 3mA | 270nC @ 10V | Super Junction | ||||||||||||||||||||||||||||||||
| APTC60DDAM70CT1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | SP1 | 10 | 1 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 250W | UPPER | UNSPECIFIED | 12 | 250W | 2 | FET General Purpose Power | 21 ns | 30ns | 84 ns | 283 ns | 39A | 20V | SILICON | COMPLEX | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.07Ohm | 2 N-Channel (Dual) | 7000pF @ 25V | 70m Ω @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | Super Junction | ||||||||||||||||||||||||||||||||||
| ALD111910SAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | RoHS Compliant | 10 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6928 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2011 | /files/alphaomegasemiconductorinc-aon6928-datasheets-5879.pdf | 8-PowerVDFN | 8 | 4.3W | 30A | 30V | 3.6W 4.3W | 2 N-Channel (Half Bridge) | 1150pF @ 15V | 8.2m Ω @ 20A, 10V | 2.5V @ 250μA | 17A 30A | 24nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002DWA-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/diodesincorporated-2n7002dwa7-datasheets-5882.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6.010099mg | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 300mW | 260 | 30 | 300mW | 2 | FET General Purpose Powers | 3.3 ns | 3.2ns | 6.3 ns | 12 ns | 180mA | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | 60V | 2 N-Channel (Dual) | 22pF @ 25V | 6 Ω @ 115mA, 10V | 2.5V @ 250μA | 0.87nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| UPA2670T1R-E2-AX | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/renesaselectronicsamerica-upa2670t1re2ax-datasheets-5885.pdf | 6-WDFN Exposed Pad | yes | EAR99 | 2.3W | NOT SPECIFIED | 6 | NOT SPECIFIED | Other Transistors | 3A | 20V | METAL-OXIDE SEMICONDUCTOR | 2.3W | 3A | 2 P-Channel (Dual) | 473pF @ 10V | 79m Ω @ 1.5A, 4.5V | 5.1nC @ 4.5V | Logic Level Gate, 1.8V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||
| SIA922EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia922edjt1ge3-datasheets-5889.pdf | PowerPAK® SC-70-6 Dual | 6 | 15 Weeks | 6 | yes | EAR99 | No | 1.9W | Dual | 2 | FET General Purpose Power | 60ns | 45 ns | 25 ns | 4.4A | 12V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 7.8W | 4.5A | 0.072Ohm | 30V | 2 N-Channel (Dual) | 64m Ω @ 3A, 4.5V | 1.4V @ 250μA | 4.5A | 12nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| ALD111910PAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | RoHS Compliant | 10 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8M3FU6TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-sp8m3tb-datasheets-0418.pdf | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 8 | EAR99 | No | 2W | *M3 | Dual | 2W | 25ns | 25 ns | 60 ns | 4.5A | 20V | 30V | 2.5V | 30V | N and P-Channel | 230pF @ 10V | 2.5 V | 51m Ω @ 5A, 10V | 2.5V @ 1mA | 5A 4.5A | 5.5nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| APTC90TAM60TPG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptc90tam60tpg-datasheets-5908.pdf | SP6 | 23 | 22 Weeks | 6 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 462W | UPPER | UNSPECIFIED | 23 | 6 | FET General Purpose Power | R-XUFM-X23 | 70 ns | 20ns | 25 ns | 400 ns | 59A | 20V | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 900V | 900V | METAL-OXIDE SEMICONDUCTOR | 150A | 1940 mJ | 6 N-Channel (3-Phase Bridge) | 13600pF @ 100V | 60m Ω @ 52A, 10V | 3.5V @ 6mA | 540nC @ 10V | Super Junction | ||||||||||||||||||||||||||||||
| APTC90H12T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptc90h12t1g-datasheets-5914.pdf | SP1 | 12 | 22 Weeks | 1 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 250W | UPPER | UNSPECIFIED | 12 | 250W | 4 | FET General Purpose Power | 70 ns | 20ns | 25 ns | 400 ns | 30A | 20V | SILICON | COMPLEX | ISOLATED | SWITCHING | 900V | 900V | METAL-OXIDE SEMICONDUCTOR | 75A | 4 N-Channel (H-Bridge) | 6800pF @ 100V | 120m Ω @ 26A, 10V | 3.5V @ 3mA | 270nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||
| UPA2672T1R-E2-AX | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/renesaselectronicsamerica-upa2672t1re2ax-datasheets-5922.pdf | 6-WDFN Exposed Pad | yes | EAR99 | 2.3W | NOT SPECIFIED | 6 | NOT SPECIFIED | Other Transistors | 4A | 12V | METAL-OXIDE SEMICONDUCTOR | 2.3W | 4A | 2 P-Channel (Dual) | 486pF @ 10V | 67m Ω @ 2A, 4.5V | 5nC @ 4.5V | Logic Level Gate, 1.8V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMP3F37DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-zxmp3f37dn8ta-datasheets-5928.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.81W | GULL WING | 260 | 8 | 40 | 2.7W | 2 | Other Transistors | 3.5 ns | 4.9ns | 28 ns | 44 ns | 7.3A | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 5.7A | 2 P-Channel (Dual) | 1678pF @ 15V | 25m Ω @ 7.1A, 10V | 3V @ 250μA | 5.7A | 31.6nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||
| APTC90HM60T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptc90hm60t3g-datasheets-5931.pdf | SP3 | 20 | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 462W | UPPER | UNSPECIFIED | 25 | 4 | FET General Purpose Power | R-XUFM-X20 | 70 ns | 20ns | 25 ns | 400 ns | 59A | 20V | SILICON | COMPLEX | ISOLATED | SWITCHING | 900V | 900V | METAL-OXIDE SEMICONDUCTOR | 150A | 0.06Ohm | 4 N-Channel (H-Bridge) | 13600pF @ 100V | 60m Ω @ 52A, 10V | 3.5V @ 6mA | 540nC @ 10V | Super Junction |
