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ContactAPTM10DHM09T3G
APTM10DHM09T3G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microsemi Corporation stock available at Utmel
- Manufacturer: Microsemi Corporation
- NO: 523-APTM10DHM09T3G
- Package: SP3
- Datasheet:
- Stock: 4275
- Description: APTM10DHM09T3G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microsemi Corporation stock available at Utmel(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | SP3 |
| Number of Pins | 3 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Bulk |
| Published | 2012 |
| Series | POWER MOS V® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 390W |
| Number of Elements | 2 |
| Power Dissipation | 390W |
| Turn On Delay Time | 35 ns |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Rds On (Max) @ Id, Vgs | 10m Ω @ 69.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 9875pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 350nC @ 10V |
| Rise Time | 70ns |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time (Typ) | 125 ns |
| Turn-Off Delay Time | 95 ns |
| Continuous Drain Current (ID) | 139A |
| Gate to Source Voltage (Vgs) | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
