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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SI5906DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si5906dut1ge3-datasheets-2735.pdf | PowerPAK® ChipFET™ Dual | Lead Free | 6 | Unknown | 31MOhm | 8 | EAR99 | e3 | PURE MATTE TIN | 10.4W | NO LEAD | 260 | 8 | Dual | 30 | 10.4W | 2 | Not Qualified | R-XDSO-N6 | 10 ns | 90ns | 50 ns | 12 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 2.2V | 6A | 30V | 2 N-Channel (Dual) | 300pF @ 15V | 31m Ω @ 4.8A, 10V | 2.2V @ 250μA | 8.6nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| BSL806NL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/infineontechnologies-bsl806nh6327xtsa1-datasheets-1248.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | 500mW | GULL WING | BSL806 | 6 | 2 | R-PDSO-G6 | 7.5 ns | 9.9ns | 3.7 ns | 12 ns | 2.3A | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.057Ohm | 28.6 pF | 2 N-Channel (Dual) | 259pF @ 10V | 57m Ω @ 2.3A, 2.5V | 750mV @ 11μA | 1.7nC @ 2.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| AON6922 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2010 | 8-WDFN Exposed Pad | 8 | 2.2W | 2 | FET General Purpose Power | 31A | 12V | 25V | METAL-OXIDE SEMICONDUCTOR | 2W 2.2W | 2 N-Channel (Half Bridge) | 2340pF @ 12.5V | 3.8m Ω @ 20A, 10V | 1.7V @ 250μA | 18A 31A | 32nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ920DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-siz920dtt1ge3-datasheets-2719.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 6 | Unknown | 8 | EAR99 | No | 100W | C BEND | SIZ920 | 2 | Dual | 1 | R-PDSO-C6 | 40A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.2V | 39W 100W | 70A | 30V | 2 N-Channel (Half Bridge) | 1260pF @ 15V | 7.1m Ω @ 18.9A, 10V | 2.5V @ 250μA | 35nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||
| MP6M11TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-mp6m11tcr-datasheets-2769.pdf | 6-SMD, Flat Leads | 6 | EAR99 | unknown | 2W | DUAL | *M11 | 2 | R-PDSO-F6 | 3.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 12A | 0.14Ohm | N and P-Channel | 85pF @ 10V | 98m Ω @ 3.5A, 10V | 2.5V @ 1mA | 1.9nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI6955ADQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6955adqt1ge3-datasheets-2330.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 8 | 157.991892mg | 8 | EAR99 | e3 | MATTE TIN | 830mW | GULL WING | 260 | 8 | Dual | 40 | 830mW | 2 | Not Qualified | 8 ns | 9ns | 9 ns | 21 ns | 2.5A | 20V | SILICON | 30V | METAL-OXIDE SEMICONDUCTOR | -30V | 2 P-Channel (Dual) | 80m Ω @ 2.9A, 10V | 1V @ 250μA (Min) | 8nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| AON6910A | Alpha & Omega Semiconductor Inc. | $0.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | 8-PowerVDFN | 8 | 2W | FET General Purpose Power | 16A | 30V | METAL-OXIDE SEMICONDUCTOR | 1.9W 2W | 2 N-Channel (Half Bridge) | 670pF @ 15V | 14m Ω @ 9.1A, 10V | 2.4V @ 250μA | 9.1A 16A | 9nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON4605 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/alphaomegasemiconductorinc-aon4605-datasheets-2591.pdf | 8-SMD, Flat Lead | 16 Weeks | 8 | 1.9W | 1.9W | 2 | Other Transistors | 3.4A | 20V | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 4.3A | N and P-Channel | 210pF @ 15V | 50m Ω @ 4.3A, 10V | 2.5V @ 250μA | 4.3A 3.4A | 5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8818 | Alpha & Omega Semiconductor Inc. | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2007 | 8-TSSOP (0.173, 4.40mm Width) | 16 Weeks | 1.5W | 7A | 30V | 2 N-Channel (Dual) Common Drain | 1060pF @ 15V | 18m Ω @ 7A, 10V | 1.5V @ 250μA | 14nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4821 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/alphaomegasemiconductor-ao4821-datasheets-1809.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 2W | 2W | 2 | Other Transistors | 9A | 8V | 12V | METAL-OXIDE SEMICONDUCTOR | 9A | 2 P-Channel (Dual) | 2100pF @ 6V | 19m Ω @ 9A, 4.5V | 850mV @ 250μA | 23nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6908A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/alphaomegasemiconductor-aon6908a-datasheets-1824.pdf | 8-PowerVDFN | 16 Weeks | 8 | 2.1W | 2 | FET General Purpose Power | 17A | 30V | METAL-OXIDE SEMICONDUCTOR | 1.9W 2.1W | 2 N-Channel (Half Bridge) | 1110pF @ 15V | 8.9m Ω @ 11.5A, 10V | 2.4V @ 250μA | 11.5A 17A | 15nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON4807 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2010 | /files/alphaomegasemiconductor-aon4807-datasheets-1810.pdf | 8-SMD, Flat Lead | 8 | 1.9W | 4A | 30V | 1.9W | 2 P-Channel (Dual) | 290pF @ 15V | 68m Ω @ 4A, 10V | 2.3V @ 250μA | 10nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDQ7236AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2005 | /files/onsemiconductor-fdq7236as-datasheets-2676.pdf | 14-SOIC (0.154, 3.90mm Width) | 338mg | 14 | yes | 1.1W | Dual | 1.8W | 11A | 1.3W 1.1W | 30V | 2 N-Channel (Dual) | 920pF @ 15V | 8.7m Ω @ 14A, 10V | 3V @ 250μA | 14A 11A | 24nC @ 15V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO8804 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2007 | 8-TSSOP (0.173, 4.40mm Width) | 1.5W | 8A | 20V | 2 N-Channel (Dual) Common Drain | 1810pF @ 10V | 13m Ω @ 8A, 10V | 1V @ 250μA | 17.9nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4850 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2007 | 8-SOIC (0.154, 3.90mm Width) | 1.1W | 2.3A | 75V | 1.1W | 2 N-Channel (Dual) | 380pF @ 30V | 130m Ω @ 3.1A, 10V | 3V @ 250μA | 7nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON5802B | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/alphaomegasemiconductor-aon5802b-datasheets-1813.pdf | 6-SMD, Flat Lead Exposed Pad | 16 Weeks | 6 | 1.6W | FET General Purpose Powers | 7.2A | 30V | METAL-OXIDE SEMICONDUCTOR | 1.6W | 2 N-Channel (Dual) Common Drain | 1150pF @ 15V | 19m Ω @ 7A, 4.5V | 1.5V @ 250μA | 24nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON2800 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/alphaomegasemiconductor-aon2800-datasheets-1815.pdf | 6-WDFN Exposed Pad | 1.5W | FET General Purpose Power | 4.5A | 20V | METAL-OXIDE SEMICONDUCTOR | 1.5W | 2 N-Channel (Dual) Common Drain | 435pF @ 10V | 47m Ω @ 4A, 4.5V | 1.2V @ 250μA | 6nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON2880 | Alpha & Omega Semiconductor Inc. | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | 8-WFDFN Exposed Pad | 2W | FET General Purpose Power | 7A | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | 7A | 2 N-Channel (Dual) Common Drain | 600pF @ 10V | 21.5m Ω @ 5A, 4.5V | 1V @ 250μA | 9nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO6801A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2011 | /files/alphaomegasemiconductorinc-ao6801a-datasheets-2617.pdf | SC-74, SOT-457 | 6 | 1.15W | 1.15W | 2 | 2.3A | 12V | 30V | 2 P-Channel (Dual) | 315pF @ 15V | 115m Ω @ 2.3A, 10V | 1.4V @ 250μA | 7nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6918 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2010 | 8-WDFN Exposed Pad | 2.2W | 26.5A | 25V | 2W 2.2W | 2 N-Channel (Half Bridge) | 1560pF @ 15V | 5.2m Ω @ 20A, 10V | 2.3V @ 250μA | 15A 26.5A | 21nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5975DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5975dct1ge3-datasheets-2325.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 84.99187mg | 8 | 1.1W | 2 | Dual | 1.1W | 1206-8 ChipFET™ | 10 ns | 20ns | 20 ns | 31 ns | 3.1A | 8V | 12V | 1.1W | 86mOhm | -12V | 2 P-Channel (Dual) | 86mOhm @ 3.1A, 4.5V | 450mV @ 1mA (Min) | 3.1A | 9nC @ 4.5V | Logic Level Gate | 86 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| AON7902 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | 8-PowerWDFN | 8 | 1.8W | FET General Purpose Power | 13A | 30V | METAL-OXIDE SEMICONDUCTOR | 40A | 2 N-Channel (Half Bridge) | 710pF @ 15V | 21m Ω @ 8A, 10V | 2.3V @ 250μA | 8A 13A | 11nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOC2802 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2011 | /files/alphaomegasemiconductor-aoc2802-datasheets-1820.pdf | 4-UFBGA, WLCSP | 1.3W | 2 N-Channel (Dual) Common Drain | 10.4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM8363TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 2013 | /files/infineontechnologies-irfhm8363trpbf-datasheets-3052.pdf | 8-PowerVDFN | IRFHM8363PBF | 30V | 2.7W | 2 N-Channel (Dual) | 1165pF @ 10V | 14.9m Ω @ 10A, 10V | 2.35V @ 25μA | 11A | 15nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO303PHXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bso303phxuma1-datasheets-2644.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | 8541.29.00.95 | e3 | Halogen Free | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | 13ns | 7A | 20V | -30V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 7A | 32.8A | 0.021Ohm | 97 mJ | 2 P-Channel (Dual) | 2678pF @ 25V | 21m Ω @ 8.2A, 10V | 2V @ 100μA | 49nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SI7964DP-T1-GE3 | Vishay Siliconix | $1.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7964dpt1e3-datasheets-4803.pdf | PowerPAK® SO-8 Dual | 6 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.4W | C BEND | 260 | SI7964 | 8 | Dual | 30 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 20 ns | 15ns | 15 ns | 50 ns | 6.1A | 20V | SILICON | DRAIN | 60V | METAL-OXIDE SEMICONDUCTOR | 40A | 0.023Ohm | 31 mJ | 60V | 2 N-Channel (Dual) | 23m Ω @ 9.6A, 10V | 4.5V @ 250μA | 65nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||
| SIZ910DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-siz910dtt1ge3-datasheets-2518.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 6 | 8 | EAR99 | No | 100W | SIZ910 | 8 | 2 | Dual | 2 | FET General Purpose Power | R-PDSO-N6 | 35ns | 12 ns | 40A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 48W 100W | 100A | 0.0075Ohm | 31 mJ | 30V | 2 N-Channel (Half Bridge) | 1500pF @ 15V | 5.8m Ω @ 20A, 10V | 2.2V @ 250μA | 40nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| AON7932 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2011 | 8-WDFN Exposed Pad | 8 | 1.4W | 2 | 8.1A | 30V | 2 N-Channel (Half Bridge) | 460pF @ 15V | 20m Ω @ 6.6A, 10V | 2.4V @ 250μA | 6.6A 8.1A | 6.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MVDF1N05ER2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/onsemiconductor-mvdf1n05er2g-datasheets-2552.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | LOGIC LEVEL COMPATIBLE, ULTRA LOW ON RESISTANCE | e3 | Tin (Sn) | YES | 2W | GULL WING | Dual | 2 | FET General Purpose Power | 2A | SILICON | SWITCHING | 50V | 50V | METAL-OXIDE SEMICONDUCTOR | 2A | 10A | 0.3Ohm | 300 mJ | 2 N-Channel (Dual) | 330pF @ 25V | 300m Ω @ 1.5A, 10V | 3V @ 250μA | 12.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| NVMD6N03R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | ULTRA LOW ON RESISTANCE | No | e3 | Tin (Sn) | AEC-Q101 | 1.29W | GULL WING | 260 | NTMD6N03 | 30 | 2 | R-PDSO-G8 | 6A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 6A | 30A | 0.032Ohm | 325 mJ | 2 N-Channel (Dual) | 950pF @ 24V | 32m Ω @ 6A, 10V | 2.5V @ 250μA | 30nC @ 10V | Logic Level Gate |
