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Trans MOSFET P-CH 30V 7A 8-Pin DSO Dry
- Manufacturer: Infineon Technologies
- NO: 376-BSO303PHXUMA1
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 1680
- Description: Trans MOSFET P-CH 30V 7A 8-Pin DSO Dry(Kg)
- Delivery:
- Payment:
In Stock
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example (South Africa, Brazil, India, Pakistan, Israel, etc.)
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| HTS Code | 8541.29.00.95 |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-G8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power - Max | 2W |
| FET Type | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 21m Ω @ 8.2A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 100μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 2678pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
| Rise Time | 13ns |
| Drain to Source Voltage (Vdss) | 30V |
| Continuous Drain Current (ID) | 7A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | -30V |
| Drain Current-Max (Abs) (ID) | 7A |
| Drain-source On Resistance-Max | 0.021Ohm |
| Pulsed Drain Current-Max (IDM) | 32.8A |
| Avalanche Energy Rating (Eas) | 97 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
