FDS6912

FDS6912 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Utmel


  • Manufacturer: ON Semiconductor
  • NO: 598-FDS6912
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 33920
  • Description: FDS6912 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Utmel(Kg)

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SPECIFICATIONS

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 187mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 28MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 900mW
Terminal Form GULL WING
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 8 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V
Rise Time 13ns
Fall Time (Typ) 8 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 6A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 2 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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