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ContactCTLDM303N-M832DS TR
MOSFET 2N-CH 30V 3.6A TLM832DS
- Manufacturer: Central Semiconductor Corp
- NO: 154-CTLDM303N-M832DS TR
- Package: 8-TDFN Exposed Pad
- Datasheet:
- Stock: 964
- Description: MOSFET 2N-CH 30V 3.6A TLM832DS(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-TDFN Exposed Pad |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2014 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| Terminal Form | NO LEAD |
| Reach Compliance Code | compliant |
| JESD-30 Code | R-PDSO-N8 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Power - Max | 1.65W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 40m Ω @ 1.8A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Drain Current-Max (Abs) (ID) | 3.6A |
| Drain-source On Resistance-Max | 0.078Ohm |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
