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ContactBridge Rectifiers(5898)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Max Voltage Rating (DC) | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Diode Element Material | Breakdown Voltage-Min | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Type | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GBJ2504TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 400V | 10μA @ 400V | 1.1V @ 12.5A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU804G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/taiwansemiconductorcorporation-kbu807gt0-datasheets-5722.pdf | 4-SIP, KBU | 5 Weeks | KBU | Single Phase | 400V | 5μA @ 400V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU806G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/taiwansemiconductorcorporation-kbu807gt0-datasheets-5722.pdf | 4-SIP, KBU | 4 | 5 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSFM-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 800V | Single Phase | 200A | 1 | 8A | 800V | 5μA @ 800V | 1.1V @ 8A | 8A | |||||||||||||||||||||||||||||||||||||
| KBU1006 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 2010 | 4-SIP, KBU | 4 | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | yes | 50 | Straight | 5.05kV | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | 400μm | 10A | 300A | 10μA | SILICON | 10A | 600V | Single Phase | 1 | 600V | 10μA @ 600V | 1.05V @ 10A | |||||||||||||||||||||||||||||||||||||
| GBU4A-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu4bm351-datasheets-1039.pdf | 4-SIP, GBU | 4 | 13 Weeks | EAR99 | UL RECOGNIZED | unknown | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 50V | Single Phase | 150A | 1 | 3A | 50V | 5μA @ 50V | 1V @ 4A | 3A | |||||||||||||||||||||||||||||||||||||||||
| KBU6J | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, KBU | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | 12 | Straight | KBU | 2mm | 6A | 250A | 10μA | 10A | 600V | Single Phase | 600V | 10μA @ 50V | 1V @ 6A | 6A | |||||||||||||||||||||||||||||||||||||||||||||
| BR108-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C | Bulk | 1 | Standard | ROHS3 Compliant | 2008 | /files/microcommercialco-br102bp-datasheets-9142.pdf | 4-Square, PB-6 | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | e3 | Tin (Sn) | NO | UPPER | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | S-PUFM-W4 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 150A | 1 | 10A | 800V | 10μA @ 800V | 1.1V @ 5A | 10A | ||||||||||||||||||||||||||||||||||||
| TSS4B03G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-tss4b03gd2g-datasheets-0174.pdf | 4-SIP, TS-4B | 10 Weeks | TS4B | Single Phase | 200V | 5μA @ 200V | 980mV @ 4A | 4A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU801G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbu807gt0-datasheets-5722.pdf | 4-SIP, KBU | 10 Weeks | KBU | Single Phase | 50V | 5μA @ 50V | 1.1V @ 8A | 8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU4J-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu4bm351-datasheets-1039.pdf | 4-SIP, GBU | 4 | 13 Weeks | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 600V | Single Phase | 150A | 1 | 3A | 600V | 5μA @ 600V | 1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||
| GBU4A-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-gbu4bm351-datasheets-1039.pdf | 4-SIP, GBU | 4 | 13 Weeks | EAR99 | UL RECOGNIZED | unknown | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 50V | Single Phase | 150A | 1 | 3A | 50V | 5μA @ 50V | 1V @ 4A | 3A | |||||||||||||||||||||||||||||||||||||||||
| GBJ2004TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 400V | 5μA @ 400V | 1.1V @ 20A | 20A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TS8P06GHD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts8p01gd2g-datasheets-0972.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 800V | 10μA @ 800V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSS4B03GHD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tss4b03gd2g-datasheets-0174.pdf | 4-SIP, TS-4B | 10 Weeks | TS4B | Single Phase | 200V | 5μA @ 200V | 980mV @ 4A | 4A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBJ2501TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 100V | 10μA @ 100V | 1.1V @ 12.5A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSS4B04GHD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-tss4b03gd2g-datasheets-0174.pdf | 4-SIP, TS-4B | 10 Weeks | TS4B | Single Phase | 400V | 5μA @ 400V | 1.3V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TS15P06GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts15p06gd2g-datasheets-7161.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 800V | 10μA @ 800V | 1.1V @ 15A | 15A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR106-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C | Bulk | 1 | Standard | ROHS3 Compliant | 2008 | /files/microcommercialco-br102bp-datasheets-9142.pdf | 4-Square, PB-6 | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | UPPER | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | S-PUFM-W4 | BRIDGE, 4 ELEMENTS | SILICON | 600V | Single Phase | 150A | 1 | 10A | 600V | 10μA @ 600V | 1.1V @ 5A | 10A | |||||||||||||||||||||||||||||||||||
| BU1010-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-bu1006e345-datasheets-0093.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | BU1010 | 4 | Single | NOT SPECIFIED | 1 | Bridge Rectifier Diodes | Not Qualified | 3.2A | 1.05V | 120A | 5μA | ISOLATED | SILICON | 120A | 5μA | 1kV | 120A | Single Phase | 1 | 5μA @ 1000V | 1.05V @ 5A | ||||||||||||||||||||||||||||
| KBU805G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/taiwansemiconductorcorporation-kbu807gt0-datasheets-5722.pdf | 4-SIP, KBU | 5 Weeks | KBU | Single Phase | 600V | 5μA @ 600V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSS4B02GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-tss4b03gd2g-datasheets-0174.pdf | 4-SIP, TS-4B | 10 Weeks | TS4B | Single Phase | 100V | 5μA @ 100V | 980mV @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR1005-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C | Bulk | 1 | Standard | ROHS3 Compliant | 2008 | /files/microcommercialco-br102bp-datasheets-9142.pdf | 4-Square, PB-6 | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | e3 | Tin (Sn) | NO | UPPER | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | S-PUFM-W4 | BRIDGE, 4 ELEMENTS | SILICON | 50V | Single Phase | 150A | 1 | 10A | 50V | 10μA @ 50V | 1.1V @ 5A | 10A | ||||||||||||||||||||||||||||||||||||
| TS8P05G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts8p01gd2g-datasheets-0972.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 8A | 8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU4B-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu4bm351-datasheets-1039.pdf | 4-SIP, GBU | 4 | 13 Weeks | EAR99 | UL RECOGNIZED | unknown | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 100V | Single Phase | 150A | 1 | 3A | 100V | 5μA @ 100V | 1V @ 4A | 4A | |||||||||||||||||||||||||||||||||||||||||
| GBJ2508TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 800V | 10μA @ 800V | 1.1V @ 12.5A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSS4B01GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-tss4b03gd2g-datasheets-0174.pdf | 4-SIP, TS-4B | 10 Weeks | TS4B | Single Phase | 50V | 5μA @ 50V | 980mV @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR104-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C | Bulk | 1 | Standard | ROHS3 Compliant | 2008 | /files/microcommercialco-br102bp-datasheets-9142.pdf | 4-Square, PB-6 | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | UPPER | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | S-PUFM-W4 | BRIDGE, 4 ELEMENTS | SILICON | 400V | Single Phase | 150A | 1 | 10A | 400V | 10μA @ 400V | 1.1V @ 5A | 10A | |||||||||||||||||||||||||||||||||||
| GBJ2502TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 200V | 10μA @ 200V | 1.1V @ 12.5A | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU4M-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-gbu4ge351-datasheets-7288.pdf | 4-SIP, GBU | 22.3mm | 18.8mm | 3.56mm | 4 | 8 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | GBU4M | 4 | Single | 1 | Bridge Rectifier Diodes | 4A | 1V | 150A | 5μA | ISOLATED | SILICON | 5μA | 1kV | 150A | Single Phase | 1 | 3A | 5μA @ 1000V | 1V @ 4A | 3A | ||||||||||||||||||||||||||||||
| VS-2KBP08 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs2kbp06-datasheets-9803.pdf | 2A | D | 17.5mm | 15mm | 6.8mm | 14 Weeks | 4 | No | Single | 2A | 63A | 10μA | 63A | 10μA | 800V |
