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ContactBridge Rectifiers(5898)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Max Voltage Rating (DC) | HTS Code | Contact Resistance | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Diode Element Material | Breakdown Voltage-Min | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Type | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
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| VS-2KBB05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2016 | D | 17.5mm | 15mm | 6.5mm | 14 Weeks | 52A | 10μA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU802G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/taiwansemiconductorcorporation-kbu807gt0-datasheets-5722.pdf | 4-SIP, KBU | 5 Weeks | KBU | Single Phase | 100V | 5μA @ 100V | 1.1V @ 8A | 8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR101-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C | Bulk | 1 | Standard | ROHS3 Compliant | 2008 | /files/microcommercialco-br102bp-datasheets-9142.pdf | 4-Square, PB-6 | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | e3 | Tin (Sn) | NO | UPPER | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | S-PUFM-W4 | BRIDGE, 4 ELEMENTS | SILICON | 100V | Single Phase | 150A | 1 | 10A | 100V | 10μA @ 100V | 1.1V @ 5A | 10A | |||||||||||||||||||||||||||||||||||||
| KBU401G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/taiwansemiconductorcorporation-kbu406gt0-datasheets-0921.pdf | 4-SIP, KBU | 10 Weeks | KBU | Single Phase | 50V | 5μA @ 50V | 1.1V @ 4A | 4A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU1008 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 2010 | 4-SIP, KBU | 4 | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 60 | Straight | 5.05kV | WIRE | 4 | R-PSFM-W4 | 400μm | 10A | 300A | 10μA | BRIDGE, 4 ELEMENTS | SILICON | 10A | 800V | Single Phase | 1 | 800V | 10μA @ 800V | 1.05V @ 10A | |||||||||||||||||||||||||||||||||||||||
| BR1010-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C | Bulk | 1 | Standard | ROHS3 Compliant | 2008 | /files/microcommercialco-br102bp-datasheets-9142.pdf | 4-Square, PB-6 | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | e3 | Tin (Sn) | NO | UPPER | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | S-PUFM-W4 | BRIDGE, 4 ELEMENTS | SILICON | 1000V | Single Phase | 150A | 1 | 10A | 1kV | 10μA @ 1000V | 1.1V @ 5A | 10A | |||||||||||||||||||||||||||||||||||||
| BU1006A-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-bu1008am345-datasheets-0159.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | MATTE TIN | BU1006 | 4 | Single | 1 | Bridge Rectifier Diodes | 3A | 1.1V | 90A | 5μA | ISOLATED | SILICON | 5μA | 600V | 90A | Single Phase | 1 | 3A | 10μA @ 600V | 1.1V @ 5A | ||||||||||||||||||||||||||||||||
| KBU1010 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 2010 | 4-SIP, KBU | 4 | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | yes | 64 | Straight | 5.05kV | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | 400μm | 10A | 300A | 10μA | SILICON | 1000V | 10A | 1kV | Single Phase | 1 | 1kV | 10μA @ 1000V | 1.05V @ 10A | |||||||||||||||||||||||||||||||||||||
| BR31 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 4-Square, BR-3 | 4 Weeks | 3 | PRODUCTION (Last Updated: 5 months ago) | 6 | Straight | 30mOhm | 2.54mm | 3A | 50A | 10μA | 10A | 100V | Single Phase | 100V | 10μA @ 100V | 1V @ 1.5A | |||||||||||||||||||||||||||||||||||||||||||||||
| GBL410_HF | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/diodesincorporated-gbl410hf-datasheets-0992.pdf | 4-SIP, GBL | 4 | 9 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | DUAL | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PDSO-T4 | BRIDGE, 4 ELEMENTS | SILICON | 1000V | Single Phase | 150A | 1 | 2.4A | 1kV | 5μA @ 1000V | 1V @ 2A | 4A | |||||||||||||||||||||||||||||||||||||||||
| KBU604G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/taiwansemiconductorcorporation-kbu607gt0-datasheets-5746.pdf | 4-SIP, KBU | 5 Weeks | KBU | Single Phase | 400V | 5μA @ 400V | 1.1V @ 6A | 6A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CBR2-L040M | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~150°C TJ | Bulk | Standard | ROHS3 Compliant | 2013 | /files/centralsemiconductorcorp-cbr2l060m-datasheets-0698.pdf | 4-SIP | 4 | 10 Weeks | no | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | 400V | Single Phase | 60A | 1 | 2A | 400V | 10μA @ 400V | 1.1V @ 2A | 2A | ||||||||||||||||||||||||||||||||||||||||
| KBU10005 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 2010 | 4-SIP, KBU | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | 80 | Straight | 5.05kV | 400μm | 10A | 300A | 10μA | 10A | 50V | Single Phase | 50V | 10μA @ 50V | 1.05V @ 10A | |||||||||||||||||||||||||||||||||||||||||||||||
| TS8P06G D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts8p01gd2g-datasheets-0972.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 800V | 10μA @ 800V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| G5SBA20-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-g5sba60m351-datasheets-0955.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | Single Phase | 200V | 5μA @ 200V | 1.05V @ 3A | 2.8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSS4B04G D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-tss4b03gd2g-datasheets-0174.pdf | 4-SIP, TS-4B | 10 Weeks | TS4B | Single Phase | 400V | 5μA @ 400V | 1.3V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BU1008A-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-bu1008am345-datasheets-0159.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | BU1008 | 4 | Single | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | 3A | 90A | 5μA | ISOLATED | SILICON | 90A | 5μA | 800V | Single Phase | 1 | 3A | 5μA @ 800V | 1.1V @ 5A | ||||||||||||||||||||||||||||||
| GBJ25005TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 50V | 10μA @ 50V | 1.1V @ 12.5A | 25A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TS8P01G D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts8p01gd2g-datasheets-0972.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 50V | 10μA @ 50V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBJ1508TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | GBJ | Single Phase | 800V | 10μA @ 800V | 1.1V @ 7.5A | 15A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TS20P07G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts20p05gd2g-datasheets-7179.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 20A | 20A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MB88-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 1996 | /files/microcommercialco-mb88bp-datasheets-0978.pdf | 4-Square, BR-6 | 4 | 14 Weeks | EAR99 | UL RECOGNIZED | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | UPPER | WIRE | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | Not Qualified | S-PUFM-W4 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 125A | 1 | 8A | 800V | 10μA @ 800V | 1.1V @ 4A | 8A | |||||||||||||||||||||||||||||||||||
| VS-2KBB60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs2kbb20r-datasheets-9830.pdf | 4-SIP, 2KBB | 17.5mm | 15mm | 6.5mm | 4 | 14 Weeks | 3.968933g | Unknown | 4 | EAR99 | No | WIRE | Single | 4 | 1.9A | 1.1V | 52A | SILICON | 52A | 10μA | 600V | Single Phase | 1 | 10μA @ 600V | 1.1V @ 1.9A | ||||||||||||||||||||||||||||||||||||||
| TS8P05G D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts8p01gd2g-datasheets-0972.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR66 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, BR-6 | 4 Weeks | 6 | PRODUCTION (Last Updated: 5 months ago) | 6A | 125A | 10μA | 10A | 600V | Single Phase | 600V | 10μA @ 600V | 1V @ 3A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR68 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 4-Square, BR-6 | 4 Weeks | 6 | PRODUCTION (Last Updated: 5 months ago) | 6A | 125A | 10μA | 10A | 800V | Single Phase | 800V | 10μA @ 800V | 1V @ 3A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| G5SBA60-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-g5sba60m351-datasheets-0955.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | Single Phase | 600V | 5μA @ 600V | 1.05V @ 3A | 2.8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU8B | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2008 | 4-SIP, KBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 8 | Straight | 250.25kV | KBU | 2mm | 8A | 300A | 10μA | 10A | 100V | Single Phase | 100V | 10μA @ 100V | 1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||
| KBU402G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/taiwansemiconductorcorporation-kbu406gt0-datasheets-0921.pdf | 4-SIP, KBU | 4 | 5 Weeks | EAR99 | UL RECOGNIZED | e3 | Matte Tin (Sn) | NO | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSFM-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 100V | Single Phase | 150A | 1 | 4A | 100V | 5μA @ 100V | 1.1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||
| GBJ2002TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 200V | 5μA @ 200V | 1.1V @ 20A | 20A |
