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ContactBridge Rectifiers(5898)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Max Voltage Rating (DC) | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Diode Element Material | Breakdown Voltage-Min | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Diode Type | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TS20P06G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts20p05gd2g-datasheets-7179.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 800V | 10μA @ 800V | 1.1V @ 20A | 20A | ||||||||||||||||||||||||||||||||||||||||||||||||
| GBU2506 D2 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 4-SIP, GBU | 4 | 5 Weeks | UL RECOGNIZED | NO | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | Single Phase | 300A | 1 | 25A | 800V | 10μA @ 800V | 1.2V @ 25A | 25A | ||||||||||||||||||||||||||||||||||||||||
| TS10P07G D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts10p05gd2g-datasheets-7207.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 10A | 10A | |||||||||||||||||||||||||||||||||||||||||||||||||
| BR64 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, BR-6 | 4 | 4 Weeks | 6 | PRODUCTION (Last Updated: 6 months ago) | yes | NO | UPPER | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | S-PUFM-W4 | 6A | 125A | 10μA | BRIDGE, 4 ELEMENTS | SILICON | 10A | 400V | Single Phase | 1 | 6A | 400V | 10μA @ 400V | 1V @ 3A | |||||||||||||||||||||||||||||||
| KBU406G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbu406gt0-datasheets-0921.pdf | 4-SIP, KBU | 5 Weeks | KBU | Single Phase | 800V | 5μA @ 800V | 1.1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| KBP406G | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 4-SIP, KBP | 4 | 15 Weeks | not_compliant | e3 | Matte Tin (Sn) | NO | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | 600V | Single Phase | 130A | 1 | 2A | 600V | 5μA @ 600V | 1.1V @ 4A | 4A | |||||||||||||||||||||||||||||||||||||||
| KBU405G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/taiwansemiconductorcorporation-kbu406gt0-datasheets-0921.pdf | 4-SIP, KBU | 5 Weeks | KBU | Single Phase | 600V | 5μA @ 600V | 1.1V @ 4A | 4A | |||||||||||||||||||||||||||||||||||||||||||||||||
| GBL02-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-gbl01m351-datasheets-0836.pdf | 4-SIP, GBL | 4 | 8 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 200V | Single Phase | 150A | 1 | 3A | 200V | 5μA @ 200V | 1.1V @ 4A | 4A | |||||||||||||||||||||||||||||||
| KBU8D | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, KBU | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | 12 | Straight | 250.25kV | KBU | 2mm | 8A | 300A | 10μA | 10A | 200V | Single Phase | 200V | 10μA @ 200V | 1V @ 8A | 8A | |||||||||||||||||||||||||||||||||||
| GBJ1501TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | GBJ | Single Phase | 100V | 10μA @ 100V | 1.1V @ 7.5A | 15A | |||||||||||||||||||||||||||||||||||||||||||||||||
| KBP304G | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 4-SIP, KBP | 15 Weeks | KBP | Single Phase | 400V | 5μA @ 400V | 1.1V @ 3A | 3A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| GBL01-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-gbl01m351-datasheets-0836.pdf | 4-SIP, GBL | 4 | 8 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 100V | Single Phase | 150A | 1 | 3A | 100V | 5μA @ 100V | 1.1V @ 4A | 4A | |||||||||||||||||||||||||||||||
| GBJ15005TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | GBJ | Single Phase | 50V | 10μA @ 50V | 1.1V @ 7.5A | 15A | |||||||||||||||||||||||||||||||||||||||||||||||||
| G2SB20-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-g2sb80e351-datasheets-0542.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 1.5A | 80A | 5μA | ISOLATED | SILICON | 5μA | 200V | Single Phase | 1 | 200V | 5μA @ 200V | 1V @ 750mA | ||||||||||||||||||||||||||
| GBL08-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-gbl01m351-datasheets-0836.pdf | 4-SIP, GBL | 4 | 8 Weeks | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 800V | Single Phase | 150A | 1 | 3A | 800V | 10μA @ 800V | 1V @ 2A | 4A | ||||||||||||||||||||||||||||||
| KBU6A | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, KBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 80 | Straight | 5.05kV | KBU | 400μm | 6A | 250A | 10μA | 10A | 50V | Single Phase | 50V | 10μA @ 50V | 1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||
| KBP310G | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 4-SIP, KBP | 15 Weeks | KBP | Single Phase | 1kV | 5μA @ 1000V | 1.1V @ 3A | 3A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| G3SBA80-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-g3sba20m351-datasheets-0807.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 80A | 4A | 800V | 5μA @ 800V | 1V @ 2A | 2.3A | ||||||||||||||||||||||||||||||||||||||||
| TS10P05G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts10p05gd2g-datasheets-7207.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 10A | 10A | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1KAB05E | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | /files/vishay-vs1kab05e-datasheets-3036.pdf | 1.5A | 14 Weeks | 4 | No | Single | 10μA | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU6K | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cable | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, KBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 14 | Straight | KBU | 2mm | 6A | 250A | 10μA | 10A | 800V | Single Phase | 800V | 10μA @ 800V | 1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||
| GBU15A | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 4-SIP, GBU | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | 15A | 240A | 5μA | 5A | 50V | Single Phase | 50V | 5μA @ 50V | 1.1V @ 15A | ||||||||||||||||||||||||||||||||||||||||||||||
| GBL06-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-gbl01m351-datasheets-0836.pdf | 4-SIP, GBL | 4 | 8 Weeks | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 600V | Single Phase | 150A | 1 | 3A | 600V | 5μA @ 600V | 1.1V @ 4A | 4A | ||||||||||||||||||||||||||||||
| GBU1502TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 200V | 5μA @ 200V | 1.1V @ 15A | 15A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TS10P07G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts10p05gd2g-datasheets-7207.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 10A | 10A | ||||||||||||||||||||||||||||||||||||||||||||||||
| KBP308G | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 4-SIP, KBP | 15 Weeks | KBP | Single Phase | 800V | 5μA @ 800V | 1.1V @ 3A | 3A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TS15P07G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts15p06gd2g-datasheets-7161.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 15A | 15A | |||||||||||||||||||||||||||||||||||||||||||||||||
| GBJ1008TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 800V | 5μA @ 800V | 1.1V @ 10A | 10A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| GBL10-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-gbl01m351-datasheets-0836.pdf | 4-SIP, GBL | 4 | 8 Weeks | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 1000V | Single Phase | 150A | 1 | 3A | 1kV | 5μA @ 1000V | 1.1V @ 4A | 4A | ||||||||||||||||||||||||||||||
| GBU801 D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | 4-SIP, GBU | 10 Weeks | GBU | Single Phase | 50V | 5μA @ 50V | 1.1V @ 8A | 8A |
