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ContactBridge Rectifiers(5898)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Max Voltage Rating (DC) | HTS Code | Contact Resistance | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Diode Element Material | Breakdown Voltage-Min | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Type | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| KBL601G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 2017 | 4-SIP, KBL | 4 | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 30 | Straight | 250.25kV | WIRE | 4 | R-PSIP-W4 | 2mm | 6A | 180A | 5μA | BRIDGE, 4 ELEMENTS | SILICON | 5A | 50V | Single Phase | 1 | 6A | 50V | 5μA @ 50V | 1.1V @ 6A | ||||||||||||||||||||||||||||||||||||
| BR34 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 4-Square, BR-3 | 4 Weeks | 280Ohm | 3 | PRODUCTION (Last Updated: 5 months ago) | 3A | 50A | 10μA | 10A | 400V | Single Phase | 400V | 10μA @ 400V | 1V @ 1.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| CBR2-L080M | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~150°C TJ | Bulk | Standard | ROHS3 Compliant | 2013 | /files/centralsemiconductorcorp-cbr2l060m-datasheets-0698.pdf | 4-SIP | 4 | 10 Weeks | no | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 60A | 1 | 2A | 800V | 10μA @ 800V | 1.1V @ 2A | 2A | ||||||||||||||||||||||||||||||||||||||
| GBJ608TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 800V | 5μA @ 800V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR305 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | 125°C | -65°C | Standard | RoHS Compliant | 2010 | 4-Square, BR-3 | 4 Weeks | 3 | PRODUCTION (Last Updated: 5 months ago) | BR-3 | 3A | 50A | 10μA | 10A | 50V | Single Phase | 50V | 10μA @ 50V | 1V @ 1.5A | 3A | ||||||||||||||||||||||||||||||||||||||||||||||
| GBU10M | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 4-SIP, GBU | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | 10A | 220A | 5μA | 5A | 1kV | Single Phase | 1kV | 5μA @ 1000V | 1.1V @ 10A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBL604G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2014 | 4-SIP, KBL | 4 | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | NO | WIRE | 4 | R-PSIP-W4 | 6A | 180A | 5μA | BRIDGE, 4 ELEMENTS | SILICON | 5A | 400V | Single Phase | 1 | 6A | 400V | 5μA @ 400V | 1.1V @ 6A | |||||||||||||||||||||||||||||||||||||||||
| KBL602G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 2017 | 4-SIP, KBL | 4 | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 32 | Straight | 250.25kV | WIRE | 4 | R-PSIP-W4 | 2mm | 6A | 180A | 5μA | BRIDGE, 4 ELEMENTS | SILICON | 5A | 100V | Single Phase | 1 | 6A | 100V | 5μA @ 100V | 1.1V @ 6A | ||||||||||||||||||||||||||||||||||||
| CBR2-L060M | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~150°C TJ | Bulk | Standard | ROHS3 Compliant | 2013 | /files/centralsemiconductorcorp-cbr2l060m-datasheets-0698.pdf | 4-SIP | 4 | 10 Weeks | no | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | 600V | Single Phase | 60A | 1 | 2A | 600V | 10μA @ 600V | 1.1V @ 2A | 2A | ||||||||||||||||||||||||||||||||||||||
| GBU6A | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, GBU | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | GBU | 6A | 175A | 5μA | 5A | 50V | Single Phase | 50V | 5μA @ 50V | 1.1V @ 6A | 6A | |||||||||||||||||||||||||||||||||||||||||||||||
| GBU805HD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | 4-SIP, GBU | 10 Weeks | GBU | Single Phase | 600V | 5μA @ 600V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBL04-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-gbl01e345-datasheets-1437.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | Lead Free | 4 | 8 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 1 | Bridge Rectifier Diodes | 4A | 1V | 150A | 5μA | ISOLATED | SILICON | 5μA | 400V | 150A | Single Phase | 1 | 3A | 5μA @ 400V | 1.1V @ 4A | 3A | |||||||||||||||||||||||||||||
| GBU804HD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | 4-SIP, GBU | 10 Weeks | GBU | Single Phase | 400V | 5μA @ 400V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBJ601TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 100V | 5μA @ 100V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBLA02-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Avalanche | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbla04e351-datasheets-0593.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 4A | 120A | 5μA | ISOLATED | SILICON | 5μA | 200V | Single Phase | 1 | 3A | 5μA @ 200V | 1.1V @ 4A | 3A | |||||||||||||||||||||||||||||||
| GBL207 D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-gbl205d2g-datasheets-9775.pdf | 4-SIP, GBL | 10 Weeks | GBL | Single Phase | 1kV | 5μA @ 1000V | 1V @ 2A | 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CBR2-L010M | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~150°C TJ | Bulk | Standard | ROHS3 Compliant | 2017 | /files/centralsemiconductorcorp-cbr2l060m-datasheets-0698.pdf | 4-SIP | 4 | 10 Weeks | no | EAR99 | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | 100V | Single Phase | 60A | 1 | 2A | 100V | 10μA @ 100V | 1.1V @ 2A | 2A | ||||||||||||||||||||||||||||||||||||
| GBU802HD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | 4-SIP, GBU | 10 Weeks | GBU | Single Phase | 100V | 5μA @ 100V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| G2SB60-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-g2sb60m351-datasheets-0715.pdf | 4-SIP, GBL | 4 | 8 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 600V | Single Phase | 80A | 1 | 1.5A | 600V | 5μA @ 200V | 1V @ 750mA | 1.5A | |||||||||||||||||||||||||||||||||||||
| G2SB60-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-g2sb60m351-datasheets-0715.pdf | 4-SIP, GBL | 4 | 8 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 600V | Single Phase | 80A | 1 | 1.5A | 600V | 5μA @ 200V | 1V @ 750mA | 1.5A | |||||||||||||||||||||||||||||||||||||
| TS10KL60HD3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts10kl80d3g-datasheets-9723.pdf | 4-SIP, KBJL | 11 Weeks | KBJL | Single Phase | 600V | 5μA @ 600V | 1V @ 5A | 10A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU806HD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | 4-SIP, GBU | 10 Weeks | GBU | Single Phase | 800V | 5μA @ 800V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBL404G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -50°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 2010 | 4-SIP, KBL | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 22 | Straight | 250.25kV | 2mm | 4A | 120A | 5μA | 5A | 400V | Single Phase | 400V | 5μA @ 400V | 1.1V @ 4A | ||||||||||||||||||||||||||||||||||||||||||||
| CBR1-L040M | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~150°C TJ | Bulk | Standard | ROHS3 Compliant | 2013 | /files/centralsemiconductorcorp-cbr1l040m-datasheets-0691.pdf | 4-SIP | 4 | 10 Weeks | no | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | 400V | Single Phase | 50A | 1 | 1.5A | 400V | 10μA @ 400V | 1V @ 1A | 1.5A | ||||||||||||||||||||||||||||||||||||||
| GBU801HD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | 4-SIP, GBU | 10 Weeks | GBU | Single Phase | 50V | 5μA @ 50V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBL406G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -50°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 2010 | 4-SIP, KBL | 4 | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | yes | 24 | Straight | 250.25kV | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | 2mm | 4A | 120A | 5μA | SILICON | 5A | 600V | Single Phase | 1 | 4A | 600V | 5μA @ 600V | 1.1V @ 4A | |||||||||||||||||||||||||||||||||||
| KBL402G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -50°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-SIP, KBL | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | 4A | 120A | 5μA | 5A | 100V | Single Phase | 100V | 5μA @ 100V | 1.1V @ 4A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| GBLA10-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbla04e351-datasheets-0593.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 1 | Bridge Rectifier Diodes | 4A | 1V | 120A | 5μA | ISOLATED | SILICON | 5μA | 1kV | 120A | Single Phase | 1 | 3A | 5μA @ 1000V | 1V @ 4A | 3A | ||||||||||||||||||||||||||||||
| CBR1-D040S PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Tube | 1 (Unlimited) | Standard | /files/centralsemiconductorcorp-cbr1d040str13pbfree-datasheets-9126.pdf | 4-SMD, Gull Wing | 4 | 15 Weeks | EAR99 | compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | DUAL | 260 | 30 | 4 | Bridge Rectifier Diodes | R-PDSO-G4 | BRIDGE, 4 ELEMENTS | SILICON | 400V | Single Phase | 50A | 1 | 1A | 400V | 10μA @ 400V | 1.1V @ 1A | 1A | |||||||||||||||||||||||||||||||||||||||
| GBU6M | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, GBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 11 | Right Angle | 80mOhm | GBU | 600μm | 6A | 175A | 5μA | 5A | 1kV | Single Phase | 1kV | 5μA @ 1000V | 1.1V @ 6A | 6A |
