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ContactBridge Rectifiers(5898)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Max Voltage Rating (DC) | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Diode Element Material | Breakdown Voltage-Min | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Type | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GBJ1502TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | GBJ | Single Phase | 200V | 10μA @ 200V | 1.1V @ 7.5A | 15A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBL08-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-gbl01m351-datasheets-0836.pdf | 4-SIP, GBL | 4 | 8 Weeks | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 800V | Single Phase | 150A | 1 | 3A | 800V | 10μA @ 800V | 1V @ 2A | 4A | ||||||||||||||||||||||||||||||||||
| GBL01-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-gbl01m351-datasheets-0836.pdf | 4-SIP, GBL | 4 | 8 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 100V | Single Phase | 150A | 1 | 3A | 100V | 5μA @ 100V | 1.1V @ 4A | 4A | |||||||||||||||||||||||||||||||||||
| GBLA08-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-gbla06m345-datasheets-0805.pdf | 4-SIP, GBL | 4 | 8 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 800V | Single Phase | 120A | 1 | 3A | 800V | 5μA @ 800V | 1V @ 4A | 4A | |||||||||||||||||||||||||||||||||||
| GBU15D | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2016 | 4-SIP, GBU | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | 15A | 240A | 5μA | 5A | 200V | Single Phase | 200V | 5μA @ 200V | 1.1V @ 15A | |||||||||||||||||||||||||||||||||||||||||||||||||
| GBLA08-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-gbla06m345-datasheets-0805.pdf | 4-SIP, GBL | 4 | 8 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 800V | Single Phase | 120A | 1 | 3A | 800V | 5μA @ 800V | 1V @ 4A | 4A | |||||||||||||||||||||||||||||||||||
| GBL005-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-gbl01e345-datasheets-1437.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 1 | Bridge Rectifier Diodes | 4A | 1V | 150A | 5μA | ISOLATED | SILICON | 5μA | 50V | 150A | Single Phase | 1 | 3A | 5μA @ 50V | 1.1V @ 4A | 3A | |||||||||||||||||||||||||||
| GBLA10-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-gbla06m345-datasheets-0805.pdf | 4-SIP, GBL | 4 | 8 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 1000V | Single Phase | 120A | 1 | 3A | 1kV | 5μA @ 1000V | 1V @ 4A | 4A | |||||||||||||||||||||||||||||||||||
| GBLA06-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-gbla06m345-datasheets-0805.pdf | 4-SIP, GBL | 4 | 8 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 600V | Single Phase | 120A | 1 | 3A | 600V | 5μA @ 600V | 1V @ 4A | 4A | |||||||||||||||||||||||||||||||||||
| TS15P05G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts15p06gd2g-datasheets-7161.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 15A | 15A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| G3SBA20-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-g3sba20m351-datasheets-0807.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 80A | 4A | 200V | 5μA @ 200V | 1V @ 2A | 2.3A | ||||||||||||||||||||||||||||||||||||||||||||
| GBJ10005TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 50V | 5μA @ 50V | 1.1V @ 10A | 10A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| G3SBA20-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-g3sba20m351-datasheets-0807.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 80A | 4A | 200V | 5μA @ 200V | 1V @ 2A | 2.3A | ||||||||||||||||||||||||||||||||||||||||||||
| TS6P07G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts6p05gd2g-datasheets-7890.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBLA06-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-gbla06m345-datasheets-0805.pdf | 4-SIP, GBL | 4 | 8 Weeks | EAR99 | UL RECOGNIZED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 600V | Single Phase | 120A | 1 | 3A | 600V | 5μA @ 600V | 1V @ 4A | 4A | |||||||||||||||||||||||||||||||||||
| DF1510S-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/comchiptechnology-df1504stg-datasheets-9878.pdf | 4-SMD, Gull Wing | 10 Weeks | EAR99 | 8541.10.00.80 | DF1510 | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 50A | 1.5A | 1kV | 10μA @ 1000V | 1.1V @ 1.5A | 1.5A | ||||||||||||||||||||||||||||||||||||||||||||
| BR10005SG-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/comchiptechnology-br1006sgg-datasheets-9413.pdf | 4-Square, BR-8 | 4 | 10 Weeks | yes | UL RECOGNIZED | UPPER | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | R-XUFM-W4 | BRIDGE, 4 ELEMENTS | SILICON | 50V | Single Phase | 175A | 1 | 10A | 50V | 10μA @ 50V | 1.1V @ 5A | 10A | |||||||||||||||||||||||||||||||||||||
| TS6P05GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts6p05gd2g-datasheets-7890.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 6A | 6A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| G3SBA80-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-g3sba20m351-datasheets-0807.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 80A | 4A | 800V | 5μA @ 800V | 1V @ 2A | 2.3A | ||||||||||||||||||||||||||||||||||||||||||||
| TS6P05G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts6p05gd2g-datasheets-7890.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR1008SG-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/comchiptechnology-br1006sgg-datasheets-9413.pdf | 4-Square, BR-8 | 4 | 10 Weeks | yes | UL RECOGNIZED | UPPER | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | R-XUFM-W4 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 175A | 1 | 10A | 800V | 10μA @ 800V | 1.1V @ 5A | 10A | |||||||||||||||||||||||||||||||||||||
| GBJ1001TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 100V | 5μA @ 100V | 1.1V @ 10A | 10A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBJ1002TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | GBJ | Single Phase | 200V | 5μA @ 200V | 1.1V @ 10A | 10A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| CBR1-L020M | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~150°C TJ | Bulk | Standard | ROHS3 Compliant | 2013 | /files/centralsemiconductorcorp-cbr1l040m-datasheets-0691.pdf | 4-SIP | 4 | 10 Weeks | no | EAR99 | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | NO | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | 200V | Single Phase | 50A | 1 | 1.5A | 200V | 10μA @ 200V | 1V @ 1A | 1.5A | |||||||||||||||||||||||||||||||||||
| TS10K80HD3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts10k80d3g-datasheets-0104.pdf | 4-SIP, GBL | 10 Weeks | TS4K | Single Phase | 800V | 10μA @ 800V | 1.1V @ 10A | 10A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| G2SB20-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-g2sb80e351-datasheets-0542.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 1.5A | 80A | 5μA | ISOLATED | SILICON | 5μA | 200V | Single Phase | 1 | 200V | 5μA @ 200V | 1V @ 750mA | ||||||||||||||||||||||||||||||
| KBJ410G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, KBJ | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 35 | Right Angle | 5.05kV | KBJ | 600μm | 4A | 120A | 5μA | 5A | 1kV | Single Phase | 1kV | 5μA @ 1000V | 1.1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||
| GBU8B-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/microcommercialco-gbu8jbp-datasheets-0806.pdf | 4-SIP, GBU | 4 | 12 Weeks | yes | EAR99 | UL RECOGNIZED | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | NOT SPECIFIED | GBU8B | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 100V | Single Phase | 200A | 1 | 8A | 100V | 5μA @ 100V | 1V @ 4A | 8A | ||||||||||||||||||||||||||||||
| GBU15B | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 4-SIP, GBU | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | 15A | 240A | 5μA | 5A | 100V | Single Phase | 100V | 5μA @ 100V | 1.1V @ 15A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TS6P07G D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts6p05gd2g-datasheets-7890.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 6A | 6A |
