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ContactBridge Rectifiers(5898)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Radiation Hardening | Max Voltage Rating (DC) | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Supplier Device Package | Pitch | Forward Current | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Diode Element Material | Breakdown Voltage-Min | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Diode Type | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| KBL607G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbl601gt0-datasheets-0530.pdf | 4-SIP, KBL | 5 Weeks | KBL | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||||
| GBLA06-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbla04e351-datasheets-0593.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 4A | 120A | 5μA | ISOLATED | SILICON | 5μA | 600V | Single Phase | 1 | 3A | 5μA @ 600V | 1V @ 4A | 3A | ||||||||||||||||||||||||
| GBLA08-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbla04e351-datasheets-0593.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 4A | 120A | 5μA | ISOLATED | SILICON | 5μA | 800V | Single Phase | 1 | 3A | 5μA @ 800V | 1V @ 4A | 3A | ||||||||||||||||||||||||
| KBJ408G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2006 | 4-SIP, KBJ | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 27 | Right Angle | 5.05kV | KBJ | 600μm | 4A | 120A | 5μA | 5A | 800V | Single Phase | 800V | 5μA @ 800V | 1.1V @ 4A | 4A | ||||||||||||||||||||||||||||||||
| GBLA005-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbla04e351-datasheets-0593.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 4A | 120A | 5μA | ISOLATED | SILICON | 5μA | 50V | Single Phase | 1 | 3A | 5μA @ 50V | 1.1V @ 4A | 3A | |||||||||||||||||||||||
| GBLA01-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbla04e351-datasheets-0593.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 4A | 120A | 5μA | ISOLATED | SILICON | 5μA | 100V | Single Phase | 1 | 3A | 5μA @ 100V | 1.1V @ 4A | 3A | |||||||||||||||||||||||
| KBL602G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbl601gt0-datasheets-0530.pdf | 4-SIP, KBL | 10 Weeks | KBL | Single Phase | 100V | 10μA @ 100V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||||
| GBU4K | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2013 | 4-SIP, GBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | GBU | 4A | 150A | 5μA | 5A | 800V | Single Phase | 800V | 5μA @ 800V | 1.1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||
| KBJ402G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, KBJ | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | KBJ | 4A | 120A | 5μA | 5A | 200V | Single Phase | 200V | 5μA @ 200V | 1.1V @ 4A | 4A | |||||||||||||||||||||||||||||||||||||||
| GBU15005TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | GBU | Single Phase | 50V | 5μA @ 50V | 1.1V @ 15A | 15A | |||||||||||||||||||||||||||||||||||||||||||||||
| GBU4J | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2013 | 4-SIP, GBU | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | GBU | 4A | 150A | 5μA | 5A | 600V | Single Phase | 600V | 5μA @ 600V | 1.1V @ 4A | 4A | |||||||||||||||||||||||||||||||||||||||
| GBL06 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 4-SIP, GBL | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | GBL | 4A | 150A | 5μA | 5A | 600V | Single Phase | 600V | 5μA @ 600V | 1.1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||
| KBL604G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbl601gt0-datasheets-0530.pdf | 4-SIP, KBL | 10 Weeks | KBL | Single Phase | 400V | 10μA @ 400V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||||
| G2SB80-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-g2sb80e351-datasheets-0542.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 1.5A | 80A | 5μA | ISOLATED | SILICON | 5μA | 800V | Single Phase | 1 | 800V | 50μA @ 600V | 1V @ 750mA | |||||||||||||||||||||||||
| DB101-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/comchiptechnology-db107g-datasheets-0381.pdf | 4-EDIP (0.321, 8.15mm) | 4 | 10 Weeks | 4 | EAR99 | UL RECOGNIZED | DUAL | NOT SPECIFIED | DB101 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | SILICON | 50V | Single Phase | 30A | 1 | 1A | 50V | 10μA @ 50V | 1.1V @ 1A | 1A | |||||||||||||||||||||||||||||||
| G2SB80-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-g2sb80e351-datasheets-0542.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | Lead Free | 4 | 8 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 1.5A | 80A | 5μA | ISOLATED | SILICON | 5μA | 800V | Single Phase | 1 | 800V | 50μA @ 600V | 1V @ 750mA | ||||||||||||||||||||||||
| TS10KL100 D3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-ts10kl80d3g-datasheets-9723.pdf | 4-SIP, KBJL | 10 Weeks | KBJL | Single Phase | 1kV | 5μA @ 1000V | 1V @ 5A | 10A | |||||||||||||||||||||||||||||||||||||||||||||||
| GBU4D | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 4-SIP, GBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | GBU | 4A | 150A | 5μA | 5A | 200V | Single Phase | 200V | 5μA @ 200V | 1.1V @ 4A | 4A | |||||||||||||||||||||||||||||||||||||||
| DF208S-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-df204stg-datasheets-9495.pdf | 4-SMD, Gull Wing | 10 Weeks | 4 | EAR99 | 4 | Bridge Rectifier Diodes | Single Phase | 60A | 2A | 800V | 10μA @ 800V | 1.1V @ 2A | 2A | ||||||||||||||||||||||||||||||||||||||||
| CDBHM230L-HF | Comchip Technology | $0.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Schottky | ROHS3 Compliant | 2013 | /files/comchiptechnology-cdbhm2100lhf-datasheets-9012.pdf | TO-269AA, 4-BESOP | 4.9mm | 3.33mm | 7.24mm | 10 Weeks | EAR99 | 8541.10.00.80 | 260 | 30 | 4 | Bridge Rectifier Diodes | 50A | 1mA | BRIDGE, 4 ELEMENTS | Single Phase | 2A | 30V | 1mA @ 30V | 550mV @ 2A | 2A | ||||||||||||||||||||||||||||||||
| GBLA04-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbla04e351-datasheets-0593.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 4A | 120A | 5μA | ISOLATED | SILICON | 5μA | 400V | Single Phase | 1 | 3A | 5μA @ 400V | 1V @ 4A | 3A | ||||||||||||||||||||||||
| GBU1501TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | GBU | Single Phase | 100V | 5μA @ 100V | 1.1V @ 15A | 15A | |||||||||||||||||||||||||||||||||||||||||||||||
| GBLA04-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbla04e351-datasheets-0593.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 4A | 120A | 5μA | ISOLATED | SILICON | 5μA | 400V | Single Phase | 1 | 3A | 5μA @ 400V | 1V @ 4A | 3A | ||||||||||||||||||||||||
| G2SB60-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-g2sb80e351-datasheets-0542.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 1.5A | 80A | 5μA | ISOLATED | SILICON | 5μA | 600V | Single Phase | 1 | 600V | 5μA @ 200V | 1V @ 750mA | |||||||||||||||||||||||||
| DF1508S-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-df1504stg-datasheets-9878.pdf | 4-SMD, Gull Wing | 10 Weeks | EAR99 | 8541.10.00.80 | DF1508 | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 50A | 1.5A | 800V | 10μA @ 800V | 1.1V @ 1.5A | 1.5A | ||||||||||||||||||||||||||||||||||||||
| GBL10 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 4-SIP, GBL | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | GBL | 4A | 150A | 5μA | 5A | 1kV | Single Phase | 1kV | 5μA @ 1000V | 1.1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||
| KBL603G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbl601gt0-datasheets-0530.pdf | 4-SIP, KBL | 10 Weeks | KBL | Single Phase | 200V | 10μA @ 200V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||||
| GBU607HD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | 4-SIP, GBU | 10 Weeks | GBU | Single Phase | 1kV | 5μA @ 1000V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||
| DF202S-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-df204stg-datasheets-9495.pdf | 4-SMD, Gull Wing | 10 Weeks | 4 | EAR99 | 4 | Bridge Rectifier Diodes | Single Phase | 60A | 2A | 200V | 10μA @ 200V | 1.1V @ 2A | 2A | ||||||||||||||||||||||||||||||||||||||||
| KBL606G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbl601gt0-datasheets-0530.pdf | 4-SIP, KBL | 5 Weeks | KBL | Single Phase | 800V | 10μA @ 800V | 1.1V @ 6A | 6A |
