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ContactBridge Rectifiers(5898)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Max Voltage Rating (DC) | HTS Code | Contact Resistance | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Diode Element Material | Breakdown Voltage-Min | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Recovery Time | Diode Type | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
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| GBU6K | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, GBU | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | GBU | 6A | 175A | 5μA | 5A | 800V | Single Phase | 800V | 5μA @ 800V | 1.1V @ 6A | 6A | |||||||||||||||||||||||||||||||||||||||||||||||||
| GBLA01-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbla04e351-datasheets-0593.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 4A | 120A | 5μA | ISOLATED | SILICON | 5μA | 100V | Single Phase | 1 | 3A | 5μA @ 100V | 1.1V @ 4A | 3A | |||||||||||||||||||||||||||||||||
| GBJ6005TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 50V | 5μA @ 50V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBL408G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -50°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-SIP, KBL | 4 | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | yes | NO | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | 4A | 120A | 5μA | SILICON | 5A | 800V | Single Phase | 1 | 4A | 800V | 5μA @ 800V | 1.1V @ 4A | ||||||||||||||||||||||||||||||||||||||||||
| GBLA10-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbla04e351-datasheets-0593.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 1 | Bridge Rectifier Diodes | 4A | 1V | 120A | 5μA | ISOLATED | SILICON | 5μA | 1kV | 120A | Single Phase | 1 | 3A | 5μA @ 1000V | 1V @ 4A | 3A | ||||||||||||||||||||||||||||||||
| KBL402-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/comchiptechnology-kbl406g-datasheets-1084.pdf | 4-SIP, KBL | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 200V | Single Phase | 125A | 1 | 4A | 200V | 10μA @ 200V | 1.1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||
| GBU803HD2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | 4-SIP, GBU | 10 Weeks | GBU | Single Phase | 200V | 5μA @ 200V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU803 D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | 4-SIP, GBU | 10 Weeks | GBU | Single Phase | 200V | 5μA @ 200V | 1.1V @ 8A | 8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBL410G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -50°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 2010 | 4-SIP, KBL | 4 | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 28 | Straight | 250.25kV | WIRE | 4 | R-PSIP-W4 | 2mm | 4A | 120A | 5μA | BRIDGE, 4 ELEMENTS | SILICON | 1000V | 5A | 1kV | Single Phase | 1 | 4A | 1kV | 5μA @ 1000V | 1.1V @ 4A | |||||||||||||||||||||||||||||||||||||
| DF201S-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/comchiptechnology-df204stg-datasheets-9495.pdf | 4-SMD, Gull Wing | 10 Weeks | 4 | EAR99 | 4 | Bridge Rectifier Diodes | Single Phase | 60A | 2A | 100V | 10μA @ 100V | 1.1V @ 2A | 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| KBJ406G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2006 | 4-SIP, KBJ | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 25 | Right Angle | 5.05kV | KBJ | 600μm | 4A | 120A | 5μA | 5A | 600V | Single Phase | 600V | 5μA @ 600V | 1.1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||||
| KBJ4005G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, KBJ | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | KBJ | 4A | 120A | 5μA | 5A | 50V | Single Phase | 50V | 5μA @ 50V | 1.1V @ 4A | 4A | |||||||||||||||||||||||||||||||||||||||||||||||||
| EDF1DS-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-edf1bse377-datasheets-0391.pdf | 4-SMD, Gull Wing | 8.51mm | 3.3mm | 6.5mm | Lead Free | 4 | 8 Weeks | Unknown | 4 | yes | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | DUAL | 250 | EDF1D | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 1A | 1.05V | 50A | 5μA | SILICON | 5μA | 200V | 50A | 50 ns | Single Phase | 1A | 1 | 1A | 5μA @ 200V | 1.05V @ 1A | |||||||||||||||||||||||||
| GBU6D | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 1997 | 4-SIP, GBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | GBU | 6A | 175A | 5μA | 5A | 200V | Single Phase | 200V | 5μA @ 200V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||||
| GBU6M | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, GBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 11 | Right Angle | 80mOhm | GBU | 600μm | 6A | 175A | 5μA | 5A | 1kV | Single Phase | 1kV | 5μA @ 1000V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||
| KBJ404G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, KBJ | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | 19 | Right Angle | 5.05kV | KBJ | 600μm | 4A | 120A | 5μA | 5A | 400V | Single Phase | 400V | 5μA @ 400V | 1.1V @ 4A | 4A | |||||||||||||||||||||||||||||||||||||||||||
| CBR1-D020S PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Tube | 1 (Unlimited) | Standard | /files/centralsemiconductorcorp-cbr1d040str13pbfree-datasheets-9126.pdf | 4-SMD, Gull Wing | 4 | 15 Weeks | EAR99 | compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | DUAL | 260 | 30 | 4 | Bridge Rectifier Diodes | R-PDSO-G4 | BRIDGE, 4 ELEMENTS | SILICON | 200V | Single Phase | 50A | 1 | 1A | 200V | 10μA @ 200V | 1.1V @ 1A | 1A | |||||||||||||||||||||||||||||||||||||||||
| GBJ604TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 400V | 5μA @ 400V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU802 D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | 4-SIP, GBU | 10 Weeks | GBU | Single Phase | 100V | 5μA @ 100V | 1.1V @ 8A | 8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU804 D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | 4-SIP, GBU | 10 Weeks | GBU | Single Phase | 400V | 5μA @ 400V | 1.1V @ 8A | 8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBLA02-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Avalanche | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbla04e351-datasheets-0593.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 4A | 120A | 5μA | ISOLATED | SILICON | 5μA | 200V | Single Phase | 1 | 3A | 5μA @ 200V | 1.1V @ 4A | 3A | |||||||||||||||||||||||||||||||||
| GBLA005-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbla04e351-datasheets-0593.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 4A | 120A | 5μA | ISOLATED | SILICON | 5μA | 50V | Single Phase | 1 | 3A | 5μA @ 50V | 1.1V @ 4A | 3A | |||||||||||||||||||||||||||||||||
| GBU1508TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 800V | 5μA @ 800V | 1.1V @ 15A | 15A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBL607G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbl601gt0-datasheets-0530.pdf | 4-SIP, KBL | 5 Weeks | KBL | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBLA06-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbla04e351-datasheets-0593.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 4A | 120A | 5μA | ISOLATED | SILICON | 5μA | 600V | Single Phase | 1 | 3A | 5μA @ 600V | 1V @ 4A | 3A | ||||||||||||||||||||||||||||||||||
| GBLA08-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbla04e351-datasheets-0593.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 4A | 120A | 5μA | ISOLATED | SILICON | 5μA | 800V | Single Phase | 1 | 3A | 5μA @ 800V | 1V @ 4A | 3A | ||||||||||||||||||||||||||||||||||
| KBJ408G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2006 | 4-SIP, KBJ | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 27 | Right Angle | 5.05kV | KBJ | 600μm | 4A | 120A | 5μA | 5A | 800V | Single Phase | 800V | 5μA @ 800V | 1.1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||||
| GBLA005-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbla04e351-datasheets-0593.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 4A | 120A | 5μA | ISOLATED | SILICON | 5μA | 50V | Single Phase | 1 | 3A | 5μA @ 50V | 1.1V @ 4A | 3A | |||||||||||||||||||||||||||||||||
| GBLA01-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbla04e351-datasheets-0593.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | 4 | 8 Weeks | 4 | yes | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 4 | Bridge Rectifier Diodes | 4A | 120A | 5μA | ISOLATED | SILICON | 5μA | 100V | Single Phase | 1 | 3A | 5μA @ 100V | 1.1V @ 4A | 3A | |||||||||||||||||||||||||||||||||
| KBL602G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbl601gt0-datasheets-0530.pdf | 4-SIP, KBL | 10 Weeks | KBL | Single Phase | 100V | 10μA @ 100V | 1.1V @ 6A | 6A |
