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ContactBridge Rectifiers(5898)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Max Voltage Rating (DC) | HTS Code | Wire/Cable Gauge | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Cable Length | Diode Element Material | Breakdown Voltage-Min | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Type | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| KBU606G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/taiwansemiconductorcorporation-kbu607gt0-datasheets-5746.pdf | 4-SIP, KBU | 4 | 5 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSFM-W4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 800V | Single Phase | 175A | 1 | 6A | 800V | 5μA @ 800V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||
| VS-KBPC101 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 150°C | -40°C | Non-RoHS Compliant | 3A | D | 16.7mm | 6.35mm | 16.7mm | 14 Weeks | Unknown | 4 | No | Single | 3A | 1.1V | 55A | 10μA | 55A | 10μA | 100V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU6D-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu6dm351-datasheets-1114.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 175A | 6A | 200V | 5μA @ 200V | 1V @ 3A | 6A | |||||||||||||||||||||||||||||||||||||||||||||||
| GBU4G-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu4bm351-datasheets-1039.pdf | 4-SIP, GBU | 4 | 13 Weeks | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 400V | Single Phase | 150A | 1 | 3A | 400V | 5μA @ 400V | 1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||||
| TSS4B03GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-tss4b03gd2g-datasheets-0174.pdf | 4-SIP, TS-4B | 10 Weeks | TS4B | Single Phase | 200V | 5μA @ 200V | 980mV @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBJ25005G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Through Hole | -55°C~125°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 4-SIP, KBJ | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 39 | Right Angle | 5.05kV | 4 | Bridge Rectifier Diodes | 600μm | 25A | 350A | 5μA | BRIDGE, 4 ELEMENTS | 5A | 50V | Single Phase | 50V | 10μA @ 50V | 1.05V @ 12.5A | |||||||||||||||||||||||||||||||||||||||||||||
| GBU6B-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu6dm351-datasheets-1114.pdf | 4-SIP, GBU | 13 Weeks | Unknown | 4 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | 6A | 1V | 100V | Single Phase | 6A | 5μA @ 100V | 1V @ 6A | ||||||||||||||||||||||||||||||||||||||||||||||||
| TS8P06GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts8p01gd2g-datasheets-0972.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 800V | 10μA @ 800V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| G5SBA80-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-g5sba60m351-datasheets-0955.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | Single Phase | 800V | 5μA @ 800V | 1.05V @ 3A | 2.8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBJ2501G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~125°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 4-SIP, KBJ | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 41 | Right Angle | 5.05kV | 4 | Bridge Rectifier Diodes | 600μm | 25A | 350A | 5μA | BRIDGE, 4 ELEMENTS | 5A | 100V | Single Phase | 100V | 10μA @ 100V | 1.05V @ 12.5A | |||||||||||||||||||||||||||||||||||||||||||||
| KBJ2510G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-SIP, KBJ | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | yes | NO | 4 | Bridge Rectifier Diodes | 25A | 350A | 5μA | 5A | 1kV | Single Phase | 1kV | 10μA @ 1000V | 1.05V @ 12.5A | |||||||||||||||||||||||||||||||||||||||||||||||||
| BR82 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 4-Square, BR-8 | 4 Weeks | 8 | PRODUCTION (Last Updated: 5 months ago) | 24 AWG | 8A | 125A | 10μA | 1m | 10A | 200V | Single Phase | 200V | 10μA @ 200V | 1.1V @ 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU6J-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu6dm351-datasheets-1114.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 175A | 6A | 600V | 5μA @ 600V | 1V @ 6A | 6A | |||||||||||||||||||||||||||||||||||||||||||||||
| GBJ2008TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 800V | 10μA @ 800V | 1.1V @ 20A | 20A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBJ2504G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~125°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 4-SIP, KBJ | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 51 | Right Angle | 5.05kV | 4 | Bridge Rectifier Diodes | 600μm | 25A | 350A | 5μA | BRIDGE, 4 ELEMENTS | 5A | 400V | Single Phase | 400V | 10μA @ 400V | 1.05V @ 12.5A | |||||||||||||||||||||||||||||||||||||||||||||
| GBU4J-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-gbu4bm351-datasheets-1039.pdf | 4-SIP, GBU | 4 | 13 Weeks | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 600V | Single Phase | 150A | 1 | 3A | 600V | 5μA @ 600V | 1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||||
| GBJ1004TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 400V | 5μA @ 400V | 1.1V @ 10A | 10A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TS8P05GHC2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts8p01gd2g-datasheets-0972.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR86 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2017 | 4-Square, BR-8 | 4 Weeks | 8 | PRODUCTION (Last Updated: 5 months ago) | 24 AWG | 8A | 125A | 10μA | 4.5m | 10A | 600V | Single Phase | 600V | 10μA @ 600V | 1.1V @ 4A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU801G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/taiwansemiconductorcorporation-kbu807gt0-datasheets-5722.pdf | 4-SIP, KBU | 10 Weeks | KBU | Single Phase | 50V | 5μA @ 50V | 1.1V @ 8A | 8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU4J-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu4bm351-datasheets-1039.pdf | 4-SIP, GBU | 4 | 13 Weeks | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 600V | Single Phase | 150A | 1 | 3A | 600V | 5μA @ 600V | 1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||||
| GBU4A-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-gbu4bm351-datasheets-1039.pdf | 4-SIP, GBU | 4 | 13 Weeks | EAR99 | UL RECOGNIZED | unknown | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 50V | Single Phase | 150A | 1 | 3A | 50V | 5μA @ 50V | 1V @ 4A | 3A | |||||||||||||||||||||||||||||||||||||||||||
| TS8P06G C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/taiwansemiconductorcorporation-ts8p01gd2g-datasheets-0972.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 800V | 10μA @ 800V | 1.1V @ 8A | 8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBJ2502G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 4-SIP, KBJ | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | NO | 4 | Bridge Rectifier Diodes | 25A | 350A | 5μA | BRIDGE, 4 ELEMENTS | 5A | 200V | Single Phase | 200V | 10μA @ 200V | 1.05V @ 12.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU803G T0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/taiwansemiconductorcorporation-kbu807gt0-datasheets-5722.pdf | 4-SIP, KBU | 5 Weeks | KBU | Single Phase | 200V | 5μA @ 200V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR84 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, BR-8 | 4 Weeks | 8 | PRODUCTION (Last Updated: 5 months ago) | 24 AWG | 8A | 125A | 10μA | 2m | 10A | 400V | Single Phase | 400V | 10μA @ 400V | 1.1V @ 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DF1502S | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Bulk | 1 (Unlimited) | SMD/SMT | Standard | ROHS3 Compliant | 2012 | /files/diodesincorporated-df1504st-datasheets-9341.pdf | 4-SMD, Gull Wing | 8.51mm | 3.4mm | 6.5mm | 4 | 9 Weeks | 299.00242mg | 4 | no | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | DUAL | 260 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 1.1V | 50A | SILICON | 10μA | 200V | 50A | Single Phase | 1 | 140V | 10μA @ 100V | 1.1V @ 1.5A | 1.5A | ||||||||||||||||||||||||||||||
| BR810 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, BR-8 | 4 Weeks | 8 | PRODUCTION (Last Updated: 5 months ago) | 32 AWG | 8A | 125A | 10μA | 2m | 10A | 1kV | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 4A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU4G-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu4bm351-datasheets-1039.pdf | 4-SIP, GBU | 4 | 13 Weeks | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 400V | Single Phase | 150A | 1 | 3A | 400V | 5μA @ 400V | 1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||||
| BR805 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, BR-8 | 4 Weeks | 8 | PRODUCTION (Last Updated: 5 months ago) | 8A | 125A | 10μA | 10A | 50V | Single Phase | 50V | 10μA @ 50V | 1.1V @ 4A |
