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ContactBridge Rectifiers(5898)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Max Voltage Rating (DC) | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Diode Element Material | Breakdown Voltage-Min | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Type | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
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| GBU8J-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu8mm345-datasheets-0367.pdf | 4-SIP, GBU | 8 Weeks | 4 | EAR99 | unknown | 1 | 1V | 200A | Single Phase | 600V | 5μA @ 600V | 1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR106 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, BR-10 | 4 | 4 Weeks | 10 | PRODUCTION (Last Updated: 5 months ago) | yes | NO | UPPER | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PUFM-W4 | 10A | 150A | 10μA | BRIDGE, 4 ELEMENTS | SILICON | 10A | 600V | Single Phase | 1 | 600V | 10μA @ 600V | 1.1V @ 5A | ||||||||||||||||||||||||||||||||||||||||||
| BU1206-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-bu1206e345-datasheets-9901.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | MATTE TIN | 4 | Single | 1 | Bridge Rectifier Diodes | 3.4A | 1.05V | 150A | 5μA | ISOLATED | SILICON | 5μA | 600V | 150A | Single Phase | 1 | 5μA @ 600V | 1.05V @ 6A | ||||||||||||||||||||||||||||||||||||
| GBU8K-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-gbu8mm345-datasheets-0367.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | Single Phase | 800V | 5μA @ 800V | 1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU1002-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/comchiptechnology-kbu1010g-datasheets-0838.pdf | 4-SIP, KBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 200V | Single Phase | 240A | 1 | 10A | 200V | 10μA @ 200V | 1V @ 5A | 10A | ||||||||||||||||||||||||||||||||||||||||||
| GBU406-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/comchiptechnology-gbu406g-datasheets-1204.pdf | 4-SIP, GBU | 12 Weeks | EAR99 | 8541.10.00.80 | NOT SPECIFIED | GBU406 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 150A | 4A | 600V | 10μA @ 600V | 1V @ 2A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||
| GBU401-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/comchiptechnology-gbu406g-datasheets-1204.pdf | 4-SIP, GBU | 12 Weeks | EAR99 | 8541.10.00.80 | NOT SPECIFIED | GBU401 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 150A | 4A | 100V | 10μA @ 100V | 1V @ 2A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||
| KBJ401G | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2006 | /files/diodesincorporated-kbj406g-datasheets-9395.pdf | 100V | 4A | 4-SIP, KBJ | 40pF | 25.2mm | 19.3mm | 9.7mm | Exempt | 4 | 31 Weeks | 4 | no | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 260 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 4A | 4A | 1V | 120A | ISOLATED | SILICON | 5μA | 100V | 120A | Single Phase | 1 | 70V | 5μA @ 100V | 1V @ 2A | |||||||||||||||||||||||||||
| GSIB6A20-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gsib6a20e345-datasheets-1176.pdf | 4-SIP, GSIB-5S | 4 | 10 Weeks | yes | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT APPLICABLE | 4 | NOT APPLICABLE | 4 | Bridge Rectifier Diodes | Not Qualified | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 200V | Single Phase | 150A | 1 | 2.8A | 200V | 10μA @ 200V | 1V @ 3A | 2.8A | ||||||||||||||||||||||||||||||||||||
| GBU6A-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu6dm351-datasheets-1114.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 175A | 6A | 50V | 5μA @ 50V | 1V @ 6A | 3.8A | ||||||||||||||||||||||||||||||||||||||||||||||||
| BR1005 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2010 | 4-Square, BR-10 | 4 | 4 Weeks | 35Ohm | 10 | PRODUCTION (Last Updated: 5 months ago) | yes | NO | UPPER | WIRE | 4 | R-PUFM-W4 | 10A | 150A | 10μA | BRIDGE, 4 ELEMENTS | SILICON | 10A | 50V | Single Phase | 1 | 50V | 10μA @ 50V | 1.1V @ 5A | |||||||||||||||||||||||||||||||||||||||||||
| GBU8A-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-gbu8mm345-datasheets-0367.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | Single Phase | 50V | 5μA @ 50V | 1V @ 8A | 3.9A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BU1208-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu1206e345-datasheets-9901.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1 | Bridge Rectifier Diodes | Not Qualified | 3.4A | 1.05V | 150A | 5μA | ISOLATED | SILICON | 150A | 5μA | 800V | 150A | Single Phase | 1 | 5μA @ 800V | 1.05V @ 6A | ||||||||||||||||||||||||||||||||
| GBU4M-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu4bm351-datasheets-1039.pdf | 4-SIP, GBU | 4 | 13 Weeks | EAR99 | UL RECOGNIZED | unknown | 8541.10.00.80 | 4 | Bridge Rectifier Diodes | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 1000V | Single Phase | 150A | 1 | 3A | 1kV | 5μA @ 1000V | 1V @ 4A | 4A | |||||||||||||||||||||||||||||||||||||||||||
| G5SBA20-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-g5sba60m351-datasheets-0955.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | Single Phase | 200V | 5μA @ 200V | 1.05V @ 3A | 2.8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU6G-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu6dm351-datasheets-1114.pdf | 4-SIP, GBU | 13 Weeks | GBU | Single Phase | 400V | 5μA @ 400V | 1V @ 6A | 6A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BU1006A5S-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu1008am345-datasheets-0159.pdf | 4-ESIP, BU-5S | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | BU1006 | 4 | Single | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | 3A | 90A | 5μA | ISOLATED | SILICON | 90A | 5μA | 600V | Single Phase | 1 | 3A | 10μA @ 600V | 1.1V @ 5A | ||||||||||||||||||||||||||||||||
| GBU8B-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-gbu8mm345-datasheets-0367.pdf | 4-SIP, GBU | 13 Weeks | EAR99 | unknown | Single Phase | 100V | 5μA @ 100V | 1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU1006-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/comchiptechnology-kbu1010g-datasheets-0838.pdf | 4-SIP, KBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 600V | Single Phase | 240A | 1 | 10A | 600V | 10μA @ 600V | 1V @ 5A | 10A | ||||||||||||||||||||||||||||||||||||||||||
| GBU6C-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbu6me345-datasheets-7734.pdf | 4-SIP, GBU | 21 Weeks | GBU | Single Phase | 150V | 5μA @ 150V | 1V @ 6A | 3.8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU6M-M3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-gbu6dm351-datasheets-1114.pdf | 4-SIP, GBU | 13 Weeks | 4 | EAR99 | Tin | unknown | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | 175A | 5μA | 800V | Single Phase | 6A | 1kV | 5μA @ 1000V | 1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||
| GBJ602TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 200V | 5μA @ 200V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBU1008-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/comchiptechnology-kbu1010g-datasheets-0838.pdf | 4-SIP, KBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 240A | 1 | 10A | 800V | 10μA @ 600V | 1V @ 5A | 10A | ||||||||||||||||||||||||||||||||||||||||||
| KBJ2508G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~125°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 2010 | 4-SIP, KBJ | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 10 | Straight | 250.25kV | 4 | Bridge Rectifier Diodes | 2mm | 25A | 350A | 5μA | BRIDGE, 4 ELEMENTS | 5A | 800V | Single Phase | 800V | 10μA @ 800V | 1.05V @ 12.5A | |||||||||||||||||||||||||||||||||||||||||||||
| BU1006-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-bu1006e345-datasheets-0093.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | No | e3 | BU1006 | 4 | Single | 1 | Bridge Rectifier Diodes | 3.2A | 1.05V | 120A | 5μA | ISOLATED | SILICON | 120A | 5μA | 600V | 120A | Single Phase | 1 | 5μA @ 600V | 1.05V @ 5A | ||||||||||||||||||||||||||||||||||
| KBU1001-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/comchiptechnology-kbu1010g-datasheets-0838.pdf | 4-SIP, KBU | 4 | 12 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | WIRE | 260 | 30 | 4 | Bridge Rectifier Diodes | R-PSIP-W4 | BRIDGE, 4 ELEMENTS | SILICON | 100V | Single Phase | 240A | 1 | 10A | 100V | 10μA @ 100V | 1V @ 5A | 10A | ||||||||||||||||||||||||||||||||||||||||||
| BU1008-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-bu1006e345-datasheets-0093.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | BU1008 | 4 | NOT SPECIFIED | 1 | Bridge Rectifier Diodes | Not Qualified | 3.2A | 1.05V | 120A | 5μA | ISOLATED | SILICON | 120A | 5μA | 800V | 120A | Single Phase | 1 | 5μA @ 800V | 1.05V @ 5A | ||||||||||||||||||||||||||||||||
| GBU6G-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-gbu6me345-datasheets-7734.pdf | 4-SIP, GBU | 22.3mm | 18.8mm | 3.56mm | 4 | 8 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | GBU6G | 4 | Single | 1 | Bridge Rectifier Diodes | 6A | 1V | 175A | 5μA | ISOLATED | SILICON | 5μA | 400V | 175A | Single Phase | 1 | 3.8A | 5μA @ 400V | 1V @ 6A | 3.8A | |||||||||||||||||||||||||||||||||
| GBJ2008TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 6 Weeks | Single Phase | 800V | 10μA @ 800V | 1.1V @ 20A | 20A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBJ2504G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | -55°C~125°C TJ | Bulk | 1 (Unlimited) | Solder | Standard | RoHS Compliant | 4-SIP, KBJ | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 51 | Right Angle | 5.05kV | 4 | Bridge Rectifier Diodes | 600μm | 25A | 350A | 5μA | BRIDGE, 4 ELEMENTS | 5A | 400V | Single Phase | 400V | 10μA @ 400V | 1.05V @ 12.5A |
